JPS5496966A - Boron diffusion method into silicon substrate - Google Patents

Boron diffusion method into silicon substrate

Info

Publication number
JPS5496966A
JPS5496966A JP402678A JP402678A JPS5496966A JP S5496966 A JPS5496966 A JP S5496966A JP 402678 A JP402678 A JP 402678A JP 402678 A JP402678 A JP 402678A JP S5496966 A JPS5496966 A JP S5496966A
Authority
JP
Japan
Prior art keywords
silicon substrate
diffusion method
boron diffusion
substrate
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP402678A
Other languages
Japanese (ja)
Inventor
Takashi Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP402678A priority Critical patent/JPS5496966A/en
Publication of JPS5496966A publication Critical patent/JPS5496966A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To avoid the density change on the surface of the Si substrate by changing the oxidizing atmosphere to the non-oxidizing one in the course of a long-time B diffusion at a high temperature.
CONSTITUTION: After the B diffusion of about 20 hours and at about 1250°C, the atmosphere is changed from the mixture gas of O2 and N2 to the atmosphere of only N2. And then the diffusion is continued for more 130 hours or so to form the isolation layer onto the Si substrate. Thus, no density change is caused on the surface of the Si substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP402678A 1978-01-17 1978-01-17 Boron diffusion method into silicon substrate Pending JPS5496966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP402678A JPS5496966A (en) 1978-01-17 1978-01-17 Boron diffusion method into silicon substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP402678A JPS5496966A (en) 1978-01-17 1978-01-17 Boron diffusion method into silicon substrate

Publications (1)

Publication Number Publication Date
JPS5496966A true JPS5496966A (en) 1979-07-31

Family

ID=11573439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP402678A Pending JPS5496966A (en) 1978-01-17 1978-01-17 Boron diffusion method into silicon substrate

Country Status (1)

Country Link
JP (1) JPS5496966A (en)

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