JPS5496966A - Boron diffusion method into silicon substrate - Google Patents
Boron diffusion method into silicon substrateInfo
- Publication number
- JPS5496966A JPS5496966A JP402678A JP402678A JPS5496966A JP S5496966 A JPS5496966 A JP S5496966A JP 402678 A JP402678 A JP 402678A JP 402678 A JP402678 A JP 402678A JP S5496966 A JPS5496966 A JP S5496966A
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- diffusion method
- boron diffusion
- substrate
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To avoid the density change on the surface of the Si substrate by changing the oxidizing atmosphere to the non-oxidizing one in the course of a long-time B diffusion at a high temperature.
CONSTITUTION: After the B diffusion of about 20 hours and at about 1250°C, the atmosphere is changed from the mixture gas of O2 and N2 to the atmosphere of only N2. And then the diffusion is continued for more 130 hours or so to form the isolation layer onto the Si substrate. Thus, no density change is caused on the surface of the Si substrate.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP402678A JPS5496966A (en) | 1978-01-17 | 1978-01-17 | Boron diffusion method into silicon substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP402678A JPS5496966A (en) | 1978-01-17 | 1978-01-17 | Boron diffusion method into silicon substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5496966A true JPS5496966A (en) | 1979-07-31 |
Family
ID=11573439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP402678A Pending JPS5496966A (en) | 1978-01-17 | 1978-01-17 | Boron diffusion method into silicon substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5496966A (en) |
-
1978
- 1978-01-17 JP JP402678A patent/JPS5496966A/en active Pending
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