JPH0530905B2 - - Google Patents

Info

Publication number
JPH0530905B2
JPH0530905B2 JP2001210A JP121090A JPH0530905B2 JP H0530905 B2 JPH0530905 B2 JP H0530905B2 JP 2001210 A JP2001210 A JP 2001210A JP 121090 A JP121090 A JP 121090A JP H0530905 B2 JPH0530905 B2 JP H0530905B2
Authority
JP
Japan
Prior art keywords
density
sintering
atmosphere
ito
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001210A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03207858A (ja
Inventor
Koichi Nakajima
Noriaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NITSUKO KYOSEKI KK
Original Assignee
NITSUKO KYOSEKI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NITSUKO KYOSEKI KK filed Critical NITSUKO KYOSEKI KK
Priority to JP2001210A priority Critical patent/JPH03207858A/ja
Priority to US07/616,559 priority patent/US5094787A/en
Priority to DE4037733A priority patent/DE4037733C2/de
Priority to KR1019900021078A priority patent/KR940007607B1/ko
Publication of JPH03207858A publication Critical patent/JPH03207858A/ja
Publication of JPH0530905B2 publication Critical patent/JPH0530905B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
JP2001210A 1990-01-08 1990-01-08 Ｉｔｏスパッタリングターゲットの製造方法 Granted JPH03207858A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001210A JPH03207858A (ja) 1990-01-08 1990-01-08 Ｉｔｏスパッタリングターゲットの製造方法
US07/616,559 US5094787A (en) 1990-01-08 1990-11-21 Method of manufacturing ito sputtering target
DE4037733A DE4037733C2 (de) 1990-01-08 1990-11-27 Verfahren zum Herstellen eines Indium/Zinn-Oxid-Targets
KR1019900021078A KR940007607B1 (ko) 1990-01-08 1990-12-19 Ito 스퍼터링타아겟의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001210A JPH03207858A (ja) 1990-01-08 1990-01-08 Ｉｔｏスパッタリングターゲットの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP7043606A Division JP2666049B2 (ja) 1995-02-08 1995-02-08 Ｉｔｏスパッタリングタ−ゲットの製造方法

Publications (2)

Publication Number Publication Date
JPH03207858A JPH03207858A (ja) 1991-09-11
JPH0530905B2 true JPH0530905B2 (show.php) 1993-05-11

Family

ID=11495106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001210A Granted JPH03207858A (ja) 1990-01-08 1990-01-08 Ｉｔｏスパッタリングターゲットの製造方法

Country Status (4)

Country Link
US (1) US5094787A (show.php)
JP (1) JPH03207858A (show.php)
KR (1) KR940007607B1 (show.php)
DE (1) DE4037733C2 (show.php)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0779005B2 (ja) * 1990-06-19 1995-08-23 住友金属鉱山株式会社 Ｉｔｏ焼結体及びその製造方法
US5480531A (en) * 1991-07-24 1996-01-02 Degussa Aktiengesellschaft Target for cathode sputtering and method of its production
JPH05148636A (ja) * 1991-11-26 1993-06-15 Nikko Kyodo Co Ltd Ｉｔｏスパツタリングタ−ゲツト
JPH05148638A (ja) * 1991-11-26 1993-06-15 Nikko Kyodo Co Ltd Ｉｔｏスパツタリングタ−ゲツトの製造方法
JPH07100852B2 (ja) * 1991-11-26 1995-11-01 株式会社ジャパンエナジー Ｉｔｏスパッタリングタ−ゲット
JP2750483B2 (ja) * 1991-11-26 1998-05-13 株式会社 ジャパンエナジー Ｉｔｏスパッタリングターゲット
JP3004807B2 (ja) * 1992-04-04 2000-01-31 同和鉱業株式会社 高密度ｉｔｏ焼結体の製造方法
US5401701A (en) * 1992-08-19 1995-03-28 Tosoh Corporation Ito sintered body and method of manufacturing the same
JPH06158308A (ja) * 1992-11-24 1994-06-07 Hitachi Metals Ltd インジウム・スズ酸化物膜用スパッタリング用ターゲットおよびその製造方法
US5417816A (en) * 1992-12-09 1995-05-23 Nikko Kyodo, Ltd. Process for preparation of indium oxide-tin oxide powder
US5433901A (en) * 1993-02-11 1995-07-18 Vesuvius Crucible Company Method of manufacturing an ITO sintered body
US5580496A (en) * 1993-04-05 1996-12-03 Sumitomo Metal Mining Company Limited Raw material for producing powder of indium-tin oxide aciculae and method of producing the raw material, powder of indium-tin oxide aciculae and method of producing the powder, electroconductive paste and light-transmitting
DE4407774C1 (de) * 1994-03-09 1995-04-20 Leybold Materials Gmbh Target für die Kathodenzerstäubung zur Herstellung transparenter, leitfähiger Schichten und Verfahren zu seiner Herstellung
DE4413344A1 (de) * 1994-04-18 1995-10-19 Leybold Materials Gmbh Verfahren zur Herstellung teilreduzierter Indiumoxid-Zinnoxid Targets
DE4413378A1 (de) * 1994-04-19 1995-10-26 Leybold Ag Einrichtung zum Beschichten eines Substrats
US5630918A (en) * 1994-06-13 1997-05-20 Tosoh Corporation ITO sputtering target
US6582641B1 (en) 1994-08-25 2003-06-24 Praxair S.T. Technology, Inc. Apparatus and method for making metal oxide sputtering targets
US5656216A (en) * 1994-08-25 1997-08-12 Sony Corporation Method for making metal oxide sputtering targets (barrier powder envelope)
DE19508898A1 (de) * 1995-03-11 1996-09-12 Leybold Materials Gmbh Indiumoxid/Zinnoxid Sputtertarget für die Kathodenzerstäubung
DE19540379C1 (de) * 1995-08-18 1996-09-26 Heraeus Gmbh W C Target für die Kathodenzerstäubung und Verfahren zur Herstellung eines solchen Targets
BR9610397A (pt) * 1995-08-31 1999-12-21 Innovative Sputtering Tech Processo para a fabricação de artigos de liga ito.
NL1004635C2 (nl) * 1995-12-06 1999-01-12 Sumitomo Chemical Co Indiumoxyde-tinoxydepoeders en werkwijze voor het voortbrengen daarvan.
JP3781878B2 (ja) * 1996-10-04 2006-05-31 同和鉱業株式会社 Ｉｔｏ焼結体およびｉｔｏスパッタリングターゲット
JP3931363B2 (ja) * 1996-12-20 2007-06-13 東ソー株式会社 Ｉｔｏ焼結体の製造法
DE19822570C1 (de) * 1998-05-20 1999-07-15 Heraeus Gmbh W C Verfahren zum Herstellen eines Indium-Zinn-Oxid-Formkörpers
US6500225B2 (en) 1998-12-03 2002-12-31 Sumitomo Chemical Company, Limited Method for producing high density indium-tin-oxide sintered body
JP3617345B2 (ja) * 1998-12-09 2005-02-02 株式会社村田製作所 酸化物系セラミック焼結体の製造方法
US6735487B1 (en) * 1999-07-01 2004-05-11 Ods Properties, Inc. Interactive wagering system with promotions
JP2003240861A (ja) * 2002-02-20 2003-08-27 Canon Inc 放射線検出素子、放射線撮像装置及び放射線検出方法
US7833821B2 (en) * 2005-10-24 2010-11-16 Solopower, Inc. Method and apparatus for thin film solar cell manufacturing
US20080073819A1 (en) * 2006-09-25 2008-03-27 Cheng Loong Corporation Method of manufacturing sputtering targets
KR100850010B1 (ko) * 2007-03-19 2008-08-04 희성금속 주식회사 초음파 화학적 반응에 의한 산화 인듐 분말의 제조방법 및ｉｔｏ 타겟재의 제조방법
KR100850011B1 (ko) * 2007-03-19 2008-08-04 희성금속 주식회사 초음파 화학적 반응에 의한 산화 주석 분말의 제조 방법 및ｉｔｏ 타겟재의 제조 방법
JP5580972B2 (ja) * 2008-06-06 2014-08-27 デクセリアルズ株式会社 スパッタリング複合ターゲット
WO2017195311A1 (ja) * 2016-05-12 2017-11-16 株式会社広築 円筒形スパッタリングターゲット材の焼成装置及び焼成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0656006B2 (ja) * 1987-07-17 1994-07-27 沖舘鉄工有限会社 降雪の処理装置
US4833302A (en) * 1988-01-27 1989-05-23 Alpha Industries Apparatus and process for firing ceramics
JPH0811711B2 (ja) * 1988-05-16 1996-02-07 東ソー株式会社 透明導電膜用スパッタリングターゲットの製造方法
US4962071A (en) * 1989-05-01 1990-10-09 Tektronix, Inc. Method of fabricating a sintered body of indium tin oxide
JPH0794345B2 (ja) * 1989-10-06 1995-10-11 住友金属鉱山株式会社 酸化インジウム‐酸化錫焼結体及びその製造方法

Also Published As

Publication number Publication date
DE4037733C2 (de) 1996-12-19
KR940007607B1 (ko) 1994-08-22
US5094787A (en) 1992-03-10
KR910014992A (ko) 1991-08-31
JPH03207858A (ja) 1991-09-11
DE4037733A1 (de) 1991-07-11

Similar Documents

Publication Publication Date Title
JPH0530905B2 (show.php)
JPH0971860A (ja) ターゲットおよびその製造方法
CN101913856A (zh) 一种用惰性气体保护法制备高品质azo靶材的方法
JPH0754132A (ja) Ｉｔｏ焼結体及びスパッタリングターゲット
CN101575207A (zh) 一种锗掺杂的azo靶材及其制备方法
KR100960222B1 (ko) 산화아연계 스퍼터링 타겟, 그 제조 방법 및 그를 이용하여제조된 산화아연계 박막
JPH0784654B2 (ja) Ｉｔｏ透明導電膜用スパッタリングターゲットの製造方法
JPH0121109B2 (show.php)
JPH054768B2 (show.php)
CN117049870B (zh) 一种氧化铟锌蒸镀靶材及其制备方法
JPH03126655A (ja) 酸化インジウム‐酸化錫焼結体及びその製造方法
WO2021019854A1 (ja) 蒸着用タブレットと酸化物透明導電膜および酸化錫系焼結体の製造方法
JPH05148638A (ja) Ｉｔｏスパツタリングタ−ゲツトの製造方法
JP2750483B2 (ja) Ｉｔｏスパッタリングターゲット
JP2666049B2 (ja) Ｉｔｏスパッタリングタ−ゲットの製造方法
JP2570832B2 (ja) 良導電性インジウムースズ酸化物焼結体の製造法
JPH0598436A (ja) Ｉｔｏスパツタリングタ−ゲツト及びその製造方法
JPH04293769A (ja) 低温成膜用ｉｔｏスパッタリングタ−ゲット
JP3004518B2 (ja) スパッタリングターゲットとその製造方法
JP3496239B2 (ja) Ｉｔｏ焼結体およびスパッタリングターゲット
KR101177491B1 (ko) 원통형 산화물 성형체 및 이를 이용한 원통형 산화물타겟의 제조 방법
CN113072375A (zh) 一种高世代tft-lcd用ito靶材的常压气氛烧结方法
US6773636B2 (en) Transparent electroconductive film and process for producing same
JPH0765167B2 (ja) Ｉｔｏ透明導電膜用スパッタリングターゲット
JPH04285163A (ja) Ｉｔｏスパッタリングタ−ゲット　　　

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080511

Year of fee payment: 15

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080511

Year of fee payment: 15

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090511

Year of fee payment: 16

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090511

Year of fee payment: 16

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100511

Year of fee payment: 17

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100511

Year of fee payment: 17