KR910014992A - Ito 스퍼터링타아겟의 제조방법 - Google Patents

Ito 스퍼터링타아겟의 제조방법 Download PDF

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Publication number
KR910014992A
KR910014992A KR1019900021078A KR900021078A KR910014992A KR 910014992 A KR910014992 A KR 910014992A KR 1019900021078 A KR1019900021078 A KR 1019900021078A KR 900021078 A KR900021078 A KR 900021078A KR 910014992 A KR910014992 A KR 910014992A
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KR
South Korea
Prior art keywords
ito sputtering
sputtering target
producing
sintering
high density
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KR1019900021078A
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English (en)
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KR940007607B1 (ko
Inventor
코오이찌 나카지마
노리아키 사또오
Original Assignee
나까무라 타쯔오
닛뽕고오교오 가부시기가이샤
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Publication of KR910014992A publication Critical patent/KR910014992A/ko
Application granted granted Critical
Publication of KR940007607B1 publication Critical patent/KR940007607B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

내용 없음

Description

ITO스퍼터링타아겟의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 서로 다른 실시예 및 비교예이다 관한 ITO타아겟의 제조공정도.

Claims (6)

  1. 산화인듐과 산화주석을 주성분으로 하는 분말혼합체를 프레스 성형하고 소결해서 ITO스퍼터링타아겟을 제조하는 데 있어서, 상기 소결을 1기압(계기압)이상의 가압산소 분위기 속에서 행하는 것을 특징으로 하는 고밀도 ITO 스퍼터링타아겟의 제조방법.
  2. 제1항에 있어서 산소를 함유하고 산소분압이 1기압(계기압) 이상인 혼합가스분위기속에서 소결을 행하는 것을 특징으로 하는 고밀도 ITO 스퍼터링타아겟의 제조방법.
  3. 제2항에 있어서 산소가스와 산소와 반응하지 않는 1종류 이상의 불활성가스와의 혼합가스분위기인 것을 특징으로 하는 고밀도 ITO 스퍼터링타아겟의 제조방법.
  4. 제1항에 있어서 소결분위기의 압력이 3∼10기압(계기압)인 것을 특징으로 하는 고밀도 ITO 스퍼터링타아겟의 제조방법.
  5. 제1항에 있어서 상기 소결온도가 1600∼1700℃인 것을 특징으로 하는 고밀도 ITO 스퍼터링타아겟의 제조방법.
  6. 제1항에 있어서 타아겟조성이 5∼10중량%의 산화주석을 함유하고, 나머지 부분이 실질적으로 산화인듐인 것을 특징으로 하는 고밀도 ITO 스퍼터링타아겟의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900021078A 1990-01-08 1990-12-19 Ito 스퍼터링타아겟의 제조방법 KR940007607B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-1210 1990-01-08
JP2001210A JPH03207858A (ja) 1990-01-08 1990-01-08 Ｉｔｏスパッタリングターゲットの製造方法

Publications (2)

Publication Number Publication Date
KR910014992A true KR910014992A (ko) 1991-08-31
KR940007607B1 KR940007607B1 (ko) 1994-08-22

Family

ID=11495106

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900021078A KR940007607B1 (ko) 1990-01-08 1990-12-19 Ito 스퍼터링타아겟의 제조방법

Country Status (4)

Country Link
US (1) US5094787A (ko)
JP (1) JPH03207858A (ko)
KR (1) KR940007607B1 (ko)
DE (1) DE4037733C2 (ko)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
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JPH0779005B2 (ja) * 1990-06-19 1995-08-23 住友金属鉱山株式会社 Ｉｔｏ焼結体及びその製造方法
US5480531A (en) * 1991-07-24 1996-01-02 Degussa Aktiengesellschaft Target for cathode sputtering and method of its production
JPH05148636A (ja) * 1991-11-26 1993-06-15 Nikko Kyodo Co Ltd Ｉｔｏスパツタリングタ−ゲツト
JPH07100852B2 (ja) * 1991-11-26 1995-11-01 株式会社ジャパンエナジー Ｉｔｏスパッタリングタ−ゲット
JP2750483B2 (ja) * 1991-11-26 1998-05-13 株式会社 ジャパンエナジー Ｉｔｏスパッタリングターゲット
JPH05148638A (ja) * 1991-11-26 1993-06-15 Nikko Kyodo Co Ltd Ｉｔｏスパツタリングタ−ゲツトの製造方法
JP3004807B2 (ja) * 1992-04-04 2000-01-31 同和鉱業株式会社 高密度ｉｔｏ焼結体の製造方法
US5401701A (en) * 1992-08-19 1995-03-28 Tosoh Corporation Ito sintered body and method of manufacturing the same
JPH06158308A (ja) * 1992-11-24 1994-06-07 Hitachi Metals Ltd インジウム・スズ酸化物膜用スパッタリング用ターゲットおよびその製造方法
US5417816A (en) * 1992-12-09 1995-05-23 Nikko Kyodo, Ltd. Process for preparation of indium oxide-tin oxide powder
US5433901A (en) * 1993-02-11 1995-07-18 Vesuvius Crucible Company Method of manufacturing an ITO sintered body
US5580496A (en) * 1993-04-05 1996-12-03 Sumitomo Metal Mining Company Limited Raw material for producing powder of indium-tin oxide aciculae and method of producing the raw material, powder of indium-tin oxide aciculae and method of producing the powder, electroconductive paste and light-transmitting
DE4407774C1 (de) * 1994-03-09 1995-04-20 Leybold Materials Gmbh Target für die Kathodenzerstäubung zur Herstellung transparenter, leitfähiger Schichten und Verfahren zu seiner Herstellung
DE4413344A1 (de) * 1994-04-18 1995-10-19 Leybold Materials Gmbh Verfahren zur Herstellung teilreduzierter Indiumoxid-Zinnoxid Targets
DE4413378A1 (de) * 1994-04-19 1995-10-26 Leybold Ag Einrichtung zum Beschichten eines Substrats
US5630918A (en) * 1994-06-13 1997-05-20 Tosoh Corporation ITO sputtering target
US6582641B1 (en) 1994-08-25 2003-06-24 Praxair S.T. Technology, Inc. Apparatus and method for making metal oxide sputtering targets
US5656216A (en) * 1994-08-25 1997-08-12 Sony Corporation Method for making metal oxide sputtering targets (barrier powder envelope)
DE19508898A1 (de) * 1995-03-11 1996-09-12 Leybold Materials Gmbh Indiumoxid/Zinnoxid Sputtertarget für die Kathodenzerstäubung
DE19540379C1 (de) * 1995-08-18 1996-09-26 Heraeus Gmbh W C Target für die Kathodenzerstäubung und Verfahren zur Herstellung eines solchen Targets
CZ289688B6 (cs) * 1995-08-31 2002-03-13 Innovative Sputtering Technology Způsob výroby produktů na bázi ITO-slitin
NL1004635C2 (nl) * 1995-12-06 1999-01-12 Sumitomo Chemical Co Indiumoxyde-tinoxydepoeders en werkwijze voor het voortbrengen daarvan.
JP3781878B2 (ja) * 1996-10-04 2006-05-31 同和鉱業株式会社 Ｉｔｏ焼結体およびｉｔｏスパッタリングターゲット
JP3931363B2 (ja) * 1996-12-20 2007-06-13 東ソー株式会社 Ｉｔｏ焼結体の製造法
DE19822570C1 (de) * 1998-05-20 1999-07-15 Heraeus Gmbh W C Verfahren zum Herstellen eines Indium-Zinn-Oxid-Formkörpers
US6500225B2 (en) 1998-12-03 2002-12-31 Sumitomo Chemical Company, Limited Method for producing high density indium-tin-oxide sintered body
JP3617345B2 (ja) * 1998-12-09 2005-02-02 株式会社村田製作所 酸化物系セラミック焼結体の製造方法
US6735487B1 (en) * 1999-07-01 2004-05-11 Ods Properties, Inc. Interactive wagering system with promotions
JP2003240861A (ja) * 2002-02-20 2003-08-27 Canon Inc 放射線検出素子、放射線撮像装置及び放射線検出方法
US7833821B2 (en) * 2005-10-24 2010-11-16 Solopower, Inc. Method and apparatus for thin film solar cell manufacturing
US20080073819A1 (en) * 2006-09-25 2008-03-27 Cheng Loong Corporation Method of manufacturing sputtering targets
KR100850010B1 (ko) * 2007-03-19 2008-08-04 희성금속 주식회사 초음파 화학적 반응에 의한 산화 인듐 분말의 제조방법 및ｉｔｏ 타겟재의 제조방법
KR100850011B1 (ko) * 2007-03-19 2008-08-04 희성금속 주식회사 초음파 화학적 반응에 의한 산화 주석 분말의 제조 방법 및ｉｔｏ 타겟재의 제조 방법
JP5580972B2 (ja) * 2008-06-06 2014-08-27 デクセリアルズ株式会社 スパッタリング複合ターゲット
CN107614739B (zh) * 2016-05-12 2020-08-14 株式会社广筑 圆柱形溅射靶材的焙烧装置以及焙烧方法

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US4833302A (en) * 1988-01-27 1989-05-23 Alpha Industries Apparatus and process for firing ceramics
JPH0811711B2 (ja) * 1988-05-16 1996-02-07 東ソー株式会社 透明導電膜用スパッタリングターゲットの製造方法
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JPH0794345B2 (ja) * 1989-10-06 1995-10-11 住友金属鉱山株式会社 酸化インジウム‐酸化錫焼結体及びその製造方法

Also Published As

Publication number Publication date
JPH0530905B2 (ko) 1993-05-11
JPH03207858A (ja) 1991-09-11
KR940007607B1 (ko) 1994-08-22
DE4037733C2 (de) 1996-12-19
DE4037733A1 (de) 1991-07-11
US5094787A (en) 1992-03-10

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