KR840007448A - 음극 스퍼터링용 타아게트 및 그 제조방법 - Google Patents

음극 스퍼터링용 타아게트 및 그 제조방법 Download PDF

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Publication number
KR840007448A
KR840007448A KR1019830006335A KR830006335A KR840007448A KR 840007448 A KR840007448 A KR 840007448A KR 1019830006335 A KR1019830006335 A KR 1019830006335A KR 830006335 A KR830006335 A KR 830006335A KR 840007448 A KR840007448 A KR 840007448A
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KR
South Korea
Prior art keywords
oxide
compression molding
target
cathode sputtering
temperature
Prior art date
Application number
KR1019830006335A
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English (en)
Inventor
디트리히 클라인 한스
Original Assignee
감스, 나우만
메르크 파텐트 게젤샤프트 미트 베슈랭크터 하프퉁
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 감스, 나우만, 메르크 파텐트 게젤샤프트 미트 베슈랭크터 하프퉁 filed Critical 감스, 나우만
Publication of KR840007448A publication Critical patent/KR840007448A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Medicines Containing Plant Substances (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Conductive Materials (AREA)

Abstract

내용 없음.

Description

음극 스퍼터링용 타아게트 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (8)

  1. 자성적으로 증강된 음극 스퍼터링에 사용되고, 핫프레스된 인듐 산화물/주석 산화물의 혼합물을 주성분으로하고, 밀도가 이론 밀도의 적어도 75%이고 이들이 비저항 0.6~0.1Ωcm에 상응하는 전기전도도를 갖는 양론적 금속 조성물에 필적할 만한 산소함량으로 감소됨을 특징으로 하는 산화물-세라믹 타아게트.
  2. 자성적으로 증강된 음극 스퍼터링에 사용되고, 핫프레스된인듐 산화물/주석 산화물의 혼합물을 주성분으로 하고, 밀도가 이론밀도의 적어도 75%가 될 정도로 금속 산화혼합물을 850~1000℃로 50~600kg/㎠ 압력하의 감압대기에서 압축 성형시킴을 특징으로 하는 산화물-세라믹 타아게트를 제조하는 방법.
  3. 제2항에 있어서, 온도를 900~920℃, 압력을 100kg/㎠로 유지시킴을 특징으로 하는 방법.
  4. 제2항 또는 제3항에 있어서, 압축 성형이 흑연 성형부에서 일어남을 특징으로 하는 방법.
  5. 제2항내지 제4항중 어느 한 항에 있어서, 압축 성형온도에서 탄소를 발생하는 탄소나 유기물질이 성형 프레스에 존재하고 있음을 특징으로 하는 방법.
  6. 제2항 내지 제5항중 어느 한 항에 있어서, 압축 성형전에 주석 및/또는 인듐 분말이 2중량%까지 금속 산화물분말에 가해짐을 특징으로 하는 방법.
  7. 제2항 내지 제6항중 어느 한 항에 있어서, 상기 타아게트가 비저항 0.6~1Ωcm에 상응하는 전기전도도를 갖는 것과 같은 방법으로 온도 및 압축 성형 지속 시간이 선택됨을 특징으로 하는 방법.
  8. ※ 참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019830006335A 1983-01-10 1983-12-30 음극 스퍼터링용 타아게트 및 그 제조방법 KR840007448A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3300525.7 1983-01-10
DE19833300525 DE3300525A1 (de) 1983-01-10 1983-01-10 Targets fuer die kathodenzerstaeubung

Publications (1)

Publication Number Publication Date
KR840007448A true KR840007448A (ko) 1984-12-07

Family

ID=6187948

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830006335A KR840007448A (ko) 1983-01-10 1983-12-30 음극 스퍼터링용 타아게트 및 그 제조방법

Country Status (8)

Country Link
US (2) US4647548A (ko)
EP (1) EP0115629B1 (ko)
JP (1) JPS59136480A (ko)
KR (1) KR840007448A (ko)
AT (1) ATE35002T1 (ko)
CA (1) CA1222217A (ko)
DE (2) DE3300525A1 (ko)
FI (1) FI76122C (ko)

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JP2936276B2 (ja) * 1990-02-27 1999-08-23 日本真空技術株式会社 透明導電膜の製造方法およびその製造装置
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Also Published As

Publication number Publication date
FI76122C (fi) 1988-09-09
DE3300525A1 (de) 1984-07-12
US4647548A (en) 1987-03-03
JPS59136480A (ja) 1984-08-06
EP0115629A3 (en) 1985-12-04
ATE35002T1 (de) 1988-06-15
US4690745A (en) 1987-09-01
FI840072A (fi) 1984-07-11
EP0115629A2 (de) 1984-08-15
CA1222217A (en) 1987-05-26
EP0115629B1 (de) 1988-06-08
FI76122B (fi) 1988-05-31
FI840072A0 (fi) 1984-01-09
DE3376986D1 (en) 1988-07-14

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