JP7622308B2 - 半導体デバイスにおける成形された相互接続バンプ - Google Patents
半導体デバイスにおける成形された相互接続バンプ Download PDFInfo
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- JP7622308B2 JP7622308B2 JP2020519726A JP2020519726A JP7622308B2 JP 7622308 B2 JP7622308 B2 JP 7622308B2 JP 2020519726 A JP2020519726 A JP 2020519726A JP 2020519726 A JP2020519726 A JP 2020519726A JP 7622308 B2 JP7622308 B2 JP 7622308B2
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- bumps
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- H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
- H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
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- Lead Frames For Integrated Circuits (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Wire Bonding (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762568330P | 2017-10-05 | 2017-10-05 | |
| US201762568331P | 2017-10-05 | 2017-10-05 | |
| US201762568333P | 2017-10-05 | 2017-10-05 | |
| US62/568,331 | 2017-10-05 | ||
| US62/568,333 | 2017-10-05 | ||
| US62/568,330 | 2017-10-05 | ||
| US16/103,839 US11444048B2 (en) | 2017-10-05 | 2018-08-14 | Shaped interconnect bumps in semiconductor devices |
| US16/103,839 | 2018-08-14 | ||
| PCT/US2018/054392 WO2019070995A1 (en) | 2017-10-05 | 2018-10-04 | INTERCONNECTION BUMPS SHAPED IN SEMICONDUCTOR DEVICES |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2020537342A JP2020537342A (ja) | 2020-12-17 |
| JP7622308B2 true JP7622308B2 (ja) | 2025-01-28 |
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ID=65992654
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020519726A Active JP7622308B2 (ja) | 2017-10-05 | 2018-10-04 | 半導体デバイスにおける成形された相互接続バンプ |
| JP2020519680A Active JP7197849B2 (ja) | 2017-10-05 | 2018-10-05 | 半導体デバイスにおけるリードフレーム |
| JP2020519681A Active JP7448754B2 (ja) | 2017-10-05 | 2018-10-05 | 半導体デバイスにおけるプレモールドリードフレーム |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020519680A Active JP7197849B2 (ja) | 2017-10-05 | 2018-10-05 | 半導体デバイスにおけるリードフレーム |
| JP2020519681A Active JP7448754B2 (ja) | 2017-10-05 | 2018-10-05 | 半導体デバイスにおけるプレモールドリードフレーム |
Country Status (5)
| Country | Link |
|---|---|
| US (6) | US11444048B2 (https=) |
| EP (3) | EP3692574A4 (https=) |
| JP (3) | JP7622308B2 (https=) |
| CN (3) | CN111316433A (https=) |
| WO (3) | WO2019070995A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11600590B2 (en) * | 2019-03-22 | 2023-03-07 | Advanced Semiconductor Engineering, Inc. | Semiconductor device and semiconductor package |
| US11682609B2 (en) | 2019-06-29 | 2023-06-20 | Texas Instruments Incorporated | Three-dimensional functional integration |
| CN110379792B (zh) * | 2019-07-23 | 2021-07-20 | 中新国际联合研究院 | 用于温度循环的电子组件焊点 |
| CN110660771B (zh) * | 2019-10-09 | 2021-03-30 | 中新国际联合研究院 | 一种半导体封装中焊点形状的优化结构 |
| CN110854029B (zh) * | 2019-11-08 | 2021-04-13 | 中新国际联合研究院 | 自然形成的粗短沙漏形焊点的成形工艺 |
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- 2018-10-05 JP JP2020519681A patent/JP7448754B2/ja active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| EP3692570A4 (en) | 2020-12-02 |
| EP3692569A4 (en) | 2020-12-09 |
| WO2019071072A1 (en) | 2019-04-11 |
| US12183703B2 (en) | 2024-12-31 |
| CN111295748A (zh) | 2020-06-16 |
| US20220037277A1 (en) | 2022-02-03 |
| US20190109076A1 (en) | 2019-04-11 |
| US10957666B2 (en) | 2021-03-23 |
| WO2019070995A1 (en) | 2019-04-11 |
| US20190109110A1 (en) | 2019-04-11 |
| JP2020537340A (ja) | 2020-12-17 |
| US20230012200A1 (en) | 2023-01-12 |
| JP7197849B2 (ja) | 2022-12-28 |
| EP3692570A1 (en) | 2020-08-12 |
| US20210210453A1 (en) | 2021-07-08 |
| EP3692574A1 (en) | 2020-08-12 |
| EP3692574A4 (en) | 2020-12-02 |
| JP7448754B2 (ja) | 2024-03-13 |
| US11152322B2 (en) | 2021-10-19 |
| CN111357098A (zh) | 2020-06-30 |
| US20190109016A1 (en) | 2019-04-11 |
| EP3692569A1 (en) | 2020-08-12 |
| JP2020537342A (ja) | 2020-12-17 |
| JP2020537341A (ja) | 2020-12-17 |
| WO2019071069A1 (en) | 2019-04-11 |
| US12191273B2 (en) | 2025-01-07 |
| US11444048B2 (en) | 2022-09-13 |
| CN111295748B (zh) | 2024-11-22 |
| CN111316433A (zh) | 2020-06-19 |
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