CN105762128A - 用于半导体器件的伸长凸块结构 - Google Patents

用于半导体器件的伸长凸块结构 Download PDF

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Publication number
CN105762128A
CN105762128A CN201610173414.3A CN201610173414A CN105762128A CN 105762128 A CN105762128 A CN 105762128A CN 201610173414 A CN201610173414 A CN 201610173414A CN 105762128 A CN105762128 A CN 105762128A
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China
Prior art keywords
projection cube
cube structure
opening
edge
major axis
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CN201610173414.3A
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English (en)
Inventor
郭庭豪
陈玉芬
陈承先
余振华
吴胜郁
庄其达
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Publication of CN105762128A publication Critical patent/CN105762128A/zh
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Abstract

本发明提供了一种用于半导体器件的伸长凸块结构。最上方保护层中具有穿过该保护层的开口。在开口中形成有柱状物，并且该柱状物延伸至最上方保护层的至少一部分上方。延伸到最上方保护层上方的部分通常为伸长形状。在实施例中，相对于凸块结构的部分的开口的部分延伸到最上方保护层上方，使得从开口的边缘到凸块的边缘的距离与凸块结构的长度的比率大于或者等于大约0.2。在另一实施例中，开口的位置相对于凸块的中心产生偏移。

Description

用于半导体器件的伸长凸块结构
本申请是于2011年08月24日提交的申请号为201110244329.9的名称为“用于半导体器件的伸长凸块结构”的发明专利申请的分案申请。
技术领域
本发明涉及半导体领域，更具体地，本发明涉及一种半导体器件中的凸块结构。
背景技术
通常，半导体管芯包括有源器件、连接到有源器件的金属化层、用来向金属化层(以及有源器件)提供信号和供电的I/O触点。为了在有源器件和I/O触点之间(以及单个有源器件之间)提供全部所需连接，金属化层通常包含一系列介电层和金属层。介电层可以由介电常数(k值)处于大约2.9和3.8之间的低k介电材料、k值低于大约2.5的超低k(ULK)介电材料、或者甚至k值处于大约2.5到大约2.9之间的极低k(ELK)介电材料、或者一些低k介电材料的组合形成。
然而，尽管可以将这些低k、ULK、和ELK材料用于改进金属化层的电性能，从而提高半导体材料的整体速度或者整体效率，但是这些材料还可能暴露出结构缺陷。例如，这些材料中的一些在应对施加到半导体器件中的应力方面，可能比其它介电材料差得多。同样，当施加到低K、ELK、和ULK的材料的压力过大时，这些低k、ULK、和ELK材料容易分层或者开裂，从而损坏或者毁坏半导体器件，进而降低了产量并且提高了成本。
当使用诸如表面安装技术(SMT)和倒装芯片封装的封装技术时，关于应力的分层问题可能会尤其麻烦。更为传统的封装IC的结构基本上通过纯金导线在管芯上的金属焊盘和延伸到模压的树脂封装件外部的电极之间形成互连件，与这种传统的封装IC不同，上述封装技术依赖于焊料凸块从而在管芯上的触点和基板(比如封装基板、印刷电路板(PCB)、另一管芯/晶圆、等等)上的触点之间形成电连接件。形成互连件的不同层通常具有不同的热膨胀系数(CTE)。因此，在接合区上源自上述不同的附加应力，还可以导致形成开裂和/或产生分层。
发明内容
为了解决现有技术中所存在的缺陷，根据本发明的一个方面，提供了一种半导体结构，包括：基板，包括导电焊盘；介电层，位于所述基板上方，所述介电层中具有开口，所述介电层位于所述导电焊盘的至少一部分上方；以及凸块结构，与所述导电焊盘电接触，从所述凸块结构的边缘到所述开口的边缘与所述凸块结构的长度的比率大于或者等于0.2。
在该半导体结构中，所述凸块结构是伸长的；或者所述开口不位于所述凸块结构的中心；或者所述开口从所述凸块结构的长轴偏移。
在该半导体结构中，所述开口从所述凸块结构的短轴偏移，并且所述开口向远离最接近的芯片边缘的方向偏移；或者所述开口是伸长的。
根据本发明的另一方面，还提供了一种半导体结构，包括：基板，包括导电焊盘；介电层，位于所述基板上方，所述介电层中的开口将所述导电焊盘的至少一部分暴露出来；以及凸块结构，与所述导电焊盘电接触，所述凸块结构沿着所述凸块结构的长轴具有长度L，外部距离do限定为在芯片边缘的方向上从所述开口的边缘到所述凸块结构的第一边缘，沿着所述凸块结构的长轴的距离，所述外部距离do与所述长度L的比率大于或者等于0.2。
在该半导体结构中，所述凸块结构是伸长的；或者内部距离di限定为从所述开口的边缘到所述凸块结构的第二边缘，沿着所述凸块结构的长轴的横向距离，所述第二边缘与所述第一边缘是相对边缘，所述内部距离di小于所述外部距离do；或者所述开口从所述凸块结构的长轴偏移。
在该半导体结构中，所述开口从所述凸块结构的短轴偏移，并且所述开口向远离最接近的芯片边缘的方向偏移；或者所述开口是伸长的。
根据本发明的又一方面，提供了一种形成半导体器件的方法，所述方法包括：形成具有导电焊盘的基板，所述基板具有最上方介电层，所述最上方介电层具有开口，所述开口将所述导电焊盘的至少一部分暴露出来；以及在所述介电层上方形成凸块结构，所述凸块结构延伸到所述开口中，并且与所述导电焊盘电接触，从所述凸块结构的边缘到所述开口的边缘的距离与所述凸块结构的长度的比率大于或者等于0.2。
在该方法中，所述凸块结构是伸长的。
在该方法中，所述凸块结构具有短轴和长轴，所述开口从所述凸块结构的所述长轴偏移；或者所述凸块结构具有短轴和长轴，所述开口从所述凸块结构的所述短轴偏移。
在该方法中，所述开口是伸长的；或者所述形成凸块结构的步骤包括：形成柱状结构，以及在所述柱状结构上形成焊接材料。
附图说明
为了全面理解本公开及其优点，现在将结合附图所进行的以下描述作为参考，其中：
图1是根据实施例的半导体器件的触点凸块和开口的平面图；
图2是根据实施例的外部触点的放大图；
图3是示出了根据实施例的应力降低的示意图；
图4是根据实施例的外部触点的横截面图；
图5a-图5c示出了可以用于根据各个实施例的凸块结构的各种形状；
图6a-图6e示出了可以用于根据各个实施例的开口的各种形状；
图7a-图7f示出了根据各个实施例的凸块结构下方的开口的各种形状和布置。
具体实施方式
下面，详细讨论本发明优选实施例的制造和使用。然而，应该理解，本实施例提供了许多可以在各种具体环境中实现的可应用的概念。所讨论的具体实施例仅仅示出制造和使用本发明的具体方式，而不用于限制实施例的范围。
本文中所描述的实施例涉及具有半导体器件的凸块结构的应用。如下所述，公开的实施例利用凸块结构将一块基板附接到另一块基板，其中，每块基板都可以是管芯、晶圆、印刷电路板、封装基板等等，从而能够获得管芯-管芯、晶圆-管芯、晶圆-晶圆、管芯或者晶圆-印刷电路板或者封装基板等等。在各个附图和所示实施例中，相似的参考标号用于表示相似的部件。
图1是根据实施例的在其上形成有外部触点102的基板100的一部分的平面图。基板100的外表面覆盖有诸如聚酰亚胺层的保护层104，从而保护基板免受环境污染，或者将该保护层104作为基板100的应力缓冲层。在保护层104中示出了开口106。图1中还示出了环绕着相应开口106的伸长凸块(elongatedbump)108的轮廓。例如，伸长凸块108可以是铜或者其他导电金属柱状结构、焊料的柱状结构等等，延伸穿过开口106，从而形成与下方导电焊盘(未示出)的电连接件。随后，伸长凸块108可以连接到另一基板，比如管芯、晶圆、印刷电路板、封装基板等等。将在下文中结合图2更详细地描述开口106和伸长凸块108的关系。
应该注意，结合位于芯片边缘或者角落的凸块结构的本文中所描述的各个实施例仅仅是为了示出目的。其他实施例可以利用芯片内部的凸块结构的各个方位。还应该注意，所提供的凸块结构的布置仅仅是为了示出目的，并且凸块结构的特定位置和图案可以变化，并且可以包括，例如，凸块阵列、芯片中心区域中的凸块线、交叠凸块等等。仅仅为了参考而示出芯片和凸块尺寸，并且这些尺寸指的不是实际尺寸或者实际相对尺寸。
图2是根据实施例的图1中所示出的外部触点102的放大图。通常，外部触点102包括伸长凸块108，该伸长凸块108具有长度为L的伸长形状。根据以下等式设置保护层104中的开口106。
其中：
do代表了从开口106到相应伸长凸块108的边缘的外部距离；以及
L代表了伸长凸块108的长度。
而且，在一些实施例中，外部距离do大于或者等于内部距离di，其中，内部距离di是沿着伸长凸块108的长轴，从开口106的边缘到伸长凸块108的边缘的距离。可以发现，诸如上述的实施例可以大大降低应力，从而降低了产生分层的危险。特别地，诸如本文所公开的实施例可以降低至少在伸长凸块108的边缘(参考标号220所示出的区域)和保护层104中的开口106的边缘(参考标号222所示出的区域)上的应力。
在本文所示出的实施例中，将伸长凸块108布置为，外部距离do(通常大于内部距离di)位于面向芯片边缘226的开口106的一侧，这是因为，在芯片边缘和/或芯片角落，应力通常较大。然而，在一些实施例中，可以在另一方向具有较大应力。在一些实施例中，可以期望将伸长凸块108和开口106定位为，使得较大的外部距离do面向较高的应力区域。
图3示出了由本文所描述的实施例获得的结果。如图3中所示，随着等式1的比率增加，应力(比如，作用在区域220和/或区域222上的应力)降低。特别地，通过将等式1的比率保持在大于大约0.2，标准化的应力可以从2.2降低到小于1.4。将等式1的比率增加到较高值(例如，0.3-0.5)，可以进一步减小应力。
图4是根据实施例的外部触点102的横截面图。示出了带有电路(未示出)以及在其上形成有触点焊盘404的基板402的一部分。基板402可以包含，例如，体硅(掺杂或者未掺杂)或者绝缘体上半导体(SOI)基板的有源层，电路可以包括适于特定应用的任何类型的电路。在实施例中，电路包括形成在基板402上的电器件，在该电器件上方具有一个或者多个介电层。可以在介电层之间形成金属层，从而在电器件之间发送电信号。电器件还可以形成在一个或者多个介电层中。一个或者多个介电层可以包括低k材料、ULK材料、和/或ELK材料。
在最上方的介电层中形成触点焊盘404，从而向外部提供电连接。如图4所示，在触点焊盘404上方形成或者图案化一个或者多个钝化层，比如钝化层406。钝化层406可以通过适当方法(比如CVD、PVD等等)，由介电材料(比如PE-USG、PE-SiN、上述的组合等等)形成。在实施例中，钝化层406的厚度为大约到大约在实施例中，钝化层406可以包含多层结构，其中包括的SiN、的PE-USG、以及的PE-SiN。
在钝化层406上方形成并且图案化保护层408。可以通过任意适当工艺(比如，光刻胶的旋转涂敷等等)，利用例如聚酰亚胺材料形成钝化层408。在实施例中，保护层408的厚度处于大约2.5μm和大约10μm之间。
之后，可以形成凸块结构，比如伸长凸块108，从而形成与触点焊盘404的电接触。在实施例中，伸长凸块108包含导电柱410和焊料材料412。例如，可以通过以下方式形成导电柱410：沉积共形种子层，在共形种子层414上方形成图案化掩模(例如，图案化光刻胶掩模、硬掩模、上述的组合等等)，其中，图案化掩模中的开口限定出了导电柱410的期望形状，以及在图案化掩模中形成导电柱410。种子层414是导电材料形成的薄层，有助于在随后的处理步骤期间形成较厚层。在实施例中，可以通过以下方式形成种子层414：利用CVD或者物理汽相沉积(PVD)技术沉积薄导电层(比如Cu、Ti、Ta、TiN、TaN、上述的组合等等的薄层)。例如，通过PVD工艺沉积Ti层，从而形成阻挡膜，并且通过PVD工艺沉积Cu层，从而形成种子层414。
导电柱410可以由任何适当导电材料(包括Cu、Ni、Pt、Al、上述的组合等等)形成，并且可以通过任意数量的适当技术(包括PVD、CVD、电化学淀积(ECD)、分子束外延法(MBE)、原子层沉积(ALD)、电镀等等)形成导电柱410。在实施例中，导电柱410的厚度处于大约20μm和大约50μm之间。
可选地，导电覆盖层(比如，图4中所示出的导电覆盖层416)可以形成在导电柱410上方。在焊接工艺期间，可以在焊接材料和下表面之间的接点上自然地(naturally)形成金属间化合物(IMC)层(未示出)。可以发现，一些材料可以比其他材料形成更坚固、更耐用的IMC层。同样，可以期望形成覆盖层，比如导电覆盖层416，从而形成具有期望性能的IMC层。例如，在导电柱410是由铜形成的实施例中，可以期望由镍形成导电覆盖层416。还可以使用其他材料，比如Pt、Au、Ag、上述的组合等等。可以通过任意数量的适当技术(包括PVD、CVD、ECD、MBE、ALD、电镀等等)来形成导电覆盖层416。
焊接材料412形成在导电柱410和/或导电覆盖层416上方。在实施例中，焊接材料412包含SnPb、高Pb材料、基于Sn的材料、无铅焊料、或者其他适当导电材料。
如上所述，在实施例中，导电柱410相对于开口106的尺寸和布置使得外部距离do与伸长凸块结构的长度L的比率大于或者等于0.2。
之后，可以实施适于特定应用的其他生产线后端(BEOL)工艺技术，包括焊料回流工艺。例如，可以形成密封剂，对单一管芯实施单一工艺，可以实施晶圆级堆叠或者管芯级堆叠。然而，应该注意，可以在许多不同条件下使用上述实施例。例如，可以将实施例用于管芯-管芯接合配置、管芯-晶圆接合配置、晶圆-晶圆接合配置、管芯级封装、晶圆级封装等等。
还应该注意，在其他实施例中，可以在将基板402附接到另一基板(未示出)之前，将焊接材料412不置于导电柱410上。在这些其他实施例中，焊接材料412可以位于其他基板上，然后将基板402上的导电柱410与其他基板上的焊接材料相接触，并且可以通过实施回流工艺，从而将两块基板焊接在一起。
可以使用任意适当工艺来形成上述结构，在本文中将不会详细描述这些适当工艺。本领域普通技术人员可以了解，以上所进行的描述提供了元件的总体描述，并且可以存在许多其他元件。例如，可以存在其他电路、衬里、阻挡层、凸块下金属化配置等等。以上描述仅仅意味着提供本文所描述的实施例的特定语境，并不意味着要将本发明或者权利要求的范围限制在特定实施例中。
上面所描述的凸块结构108和开口106的形状仅仅是为了示出的目的，可以具有任意适当形状。例如，图5a-图5c示出了可以用于凸块结构108的各种形状，图6a-图6e示出了可以用于开口106的各种形状。
而且，凸块结构108相对于开口106的位置也可以变化。例如，图7a-图7f示出了可以用于各个实施例中的凸块结构108和开口106的各种形状和布置。如图7a-图7f中所示，在图7c和图7f中，开口106可以从凸块结构108的长轴M-M偏移，在图7b、图7c、图7e、和图7f中，开口106可以从凸块结构108的短轴m-m偏移。
在实施例中，介电层形成在带有导电焊盘的基板上方，从而使得开口位于导电焊盘的至少一部分上方。凸块结构与导电焊盘电接触，其中，从凸块结构的边缘到开口的边缘与凸块结构的长度的比率大于或者等于0.2。
在另一实施例中，介电层位于基板和导电焊盘上方。介电层中的开口将导电焊盘的至少一部分暴露出来。凸块结构与导电焊盘电接触。凸块结构沿着凸块结构的长轴具有长度L，外部距离do限定为在芯片边缘方向上从开口的边缘到凸块结构的第一边缘，沿着凸块结构的长轴的距离，外部距离do与长度L的比率大于或者等于0.2。
在又一实施例中，提供了一种形成半导体器件的方法。本方法包括：形成具有导电焊盘的基板，基板具有最上方介电层，最上方介电层具有开口，开口将导电焊盘的至少一部分暴露出来。在介电层上方形成凸块结构，凸块结构延伸到开口中，并且与导电焊盘电接触。从凸块结构的边缘到开口的边缘的距离与凸块结构的长度的比率大于或者等于0.2。
尽管已经详细地描述了本发明及其优势，但应该理解，可以在不背离所附权利要求限定的本发明主旨和范围的情况下，做各种不同的改变，替换和更改。而且，本申请的范围并不仅限于本说明书中描述的工艺、机器、制造、材料组分、装置、方法和步骤的特定实施例。作为本领域普通技术人员应理解，通过本发明，现有的或今后开发的用于执行与根据本发明所采用的所述相应实施例基本相同的功能或获得基本相同结果的工艺、机器、制造，材料组分、装置、方法或步骤根据本发明可以被使用。因此，所附权利要求应该包括在这样的工艺、机器、制造、材料组分、装置、方法或步骤的范围内。此外，每条权利要求构成单独的实施例，并且多个权利要求和实施例的组合在本发明的范围内。

Claims (20)

1.一种半导体结构，包括：
基板，包括导电焊盘；
介电层，位于所述基板上方，所述介电层中具有开口，所述介电层位于所述导电焊盘的至少一部分上方，所述开口位于所述基板的角落区域，所述角落区域由所述基板的相邻侧限定；以及
凸块结构，与所述导电焊盘电接触，从所述凸块结构的边缘到所述开口的边缘与所述凸块结构的长度的比率大于或者等于0.2，其中，所述凸块结构的长轴指向所述基板的中心，所述长轴与所述基板的相邻侧均不平行。
2.根据权利要求1所述的半导体结构，其中，所述凸块结构是伸长的。
3.根据权利要求1所述的半导体结构，其中，所述开口不位于所述凸块结构的中心。
4.根据权利要求1所述的半导体结构，其中，所述开口从所述凸块结构的长轴偏移。
5.根据权利要求1所述的半导体结构，其中，所述开口从所述凸块结构的短轴偏移。
6.根据权利要求5所述的半导体结构，其中，所述开口向远离最接近的芯片边缘的方向偏移。
7.根据权利要求1所述的半导体结构，其中，所述开口是伸长的。
8.一种半导体结构，包括：
基板，包括导电焊盘；
介电层，位于所述基板上方，所述介电层中的开口将所述导电焊盘的至少一部分暴露出来；以及
凸块结构，与所述导电焊盘电接触，所述凸块结构沿着所述凸块结构的长轴具有长度L，外部距离do限定为在芯片边缘的方向上从所述开口的边缘到所述凸块结构的第一边缘，沿着所述凸块结构的长轴的距离，所述外部距离do与所述长度L的比率大于或者等于0.3，所述凸块结构位于所述基板的第一角落中，所述凸块结构的长轴相交于位于第二角落中的另一凸块结构的长轴，所述第一角落和所述第二角落共用所述基板的共同侧。
9.根据权利要求8所述的半导体结构，其中，所述凸块结构是伸长的。
10.根据权利要求8所述的半导体结构，其中，内部距离di限定为从所述开口的边缘到所述凸块结构的第二边缘，沿着所述凸块结构的长轴的横向距离，所述第二边缘与所述第一边缘是相对边缘，所述内部距离di小于所述外部距离do。
11.根据权利要求8所述的半导体结构，其中，所述开口从所述凸块结构的长轴偏移。
12.根据权利要求8所述的半导体结构，其中，所述开口从所述凸块结构的短轴偏移。
13.根据权利要求12所述的半导体结构，其中，所述开口向远离最接近的芯片边缘的方向偏移。
14.根据权利要求8所述的半导体结构，其中，所述开口是伸长的。
15.一种形成半导体器件的方法，所述方法包括：
形成具有多个导电焊盘的基板，所述基板具有最上方介电层，所述最上方介电层具有多个开口，每个所述开口将所述多个导电焊盘中对应之一的导电焊盘的至少一部分暴露出来；以及
在所述介电层上方形成多个凸块结构，每个所述凸块结构延伸到对应的所述开口中，并且与对应的所述导电焊盘电接触，从所述凸块结构的边缘到对应的所述开口的边缘的距离与所述凸块结构的长度的比率大于或者等于0.2，沿着所述基板相同边缘延伸的至少两个所述凸块结构的长轴相交于所述基板的中心区域。
16.根据权利要求15所述的方法，其中，每个所述凸块结构是伸长的。
17.根据权利要求16所述的方法，其中，每个所述凸块结构具有短轴和长轴，对应的所述开口从所述凸块结构的所述长轴偏移。
18.根据权利要求16所述的方法，其中，每个所述凸块结构具有短轴和长轴，对应的所述开口从所述凸块结构的所述短轴偏移。
19.根据权利要求15所述的方法，其中，所述开口是伸长的。
20.根据权利要求15所述的方法，其中，所述形成多个凸块结构的步骤包括：形成柱状结构，以及在每个所述柱状结构上形成焊接材料。
CN201610173414.3A 2011-02-08 2011-08-24 用于半导体器件的伸长凸块结构 Pending CN105762128A (zh)

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