CN102629599B - 四边扁平无引脚封装件及其生产方法 - Google Patents

四边扁平无引脚封装件及其生产方法 Download PDF

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Publication number
CN102629599B
CN102629599B CN201210098828.6A CN201210098828A CN102629599B CN 102629599 B CN102629599 B CN 102629599B CN 201210098828 A CN201210098828 A CN 201210098828A CN 102629599 B CN102629599 B CN 102629599B
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China
Prior art keywords
lead frame
pin
layer
thickness
chip
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CN201210098828.6A
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CN102629599A (zh
Inventor
朱文辉
慕蔚
徐召明
李习周
郭小伟
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Tianshui Huatian Technology Co Ltd
Huatian Technology Xian Co Ltd
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Tianshui Huatian Technology Co Ltd
Huatian Technology Xian Co Ltd
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Application filed by Tianshui Huatian Technology Co Ltd, Huatian Technology Xian Co Ltd filed Critical Tianshui Huatian Technology Co Ltd
Priority to CN201210098828.6A priority Critical patent/CN102629599B/zh
Publication of CN102629599A publication Critical patent/CN102629599A/zh
Priority to US14/367,788 priority patent/US9275941B2/en
Priority to PCT/CN2012/080858 priority patent/WO2013149451A1/zh
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Publication of CN102629599B publication Critical patent/CN102629599B/zh
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Abstract

本发明公开了一种四边扁平无引脚封装件及其生产方法，封装件包括由载体凹坑和环绕载体凹坑设置的三圈引脚组成的引线框架载体，该三圈引脚分别由多个互不相连的引脚组成，载体凹坑内粘贴有IC芯片，所有引脚上均镀有内引脚化学镀镍钯金层；内引脚化学镀镍钯金层与IC芯片同向设置，IC芯片与内引脚化学镀镍钯金层之间通过键合线相连接；IC芯片、所有引脚镀有内引脚化学镀镍钯金层的一端和键合线均封装于塑封体内。经晶圆减薄划片、制作引线框架、上芯、压焊、塑封、后固化、打印、电镀及分离引脚、产品分离和测试/编带制成。本封装件克服了现有普通四边扁平无引脚封装单面封装时引脚数少、焊线长、焊线成本高、频率应用受限制的问题。

Description

四边扁平无引脚封装件及其生产方法
技术领域
本发明属于电子信息自动化元器件制造技术领域，涉及一种四边扁平无引脚封装件；本发明还涉及一种该封装件的生产方法。 
背景技术
近年来，随着移动通信和移动计算机领域便捷式电子元器件的迅猛发展，小型封装和高密度组装技术得到了长足的发展；同时，也对小型封装技术提出了一系列严格要求，诸如，要求封装外形尺寸尽量缩小（尤其是封装高度小于1mm）。封装后的连接可靠性尽可能提高，适应无铅化焊接（保护环境）和有效降低成本。
长期以来，受蚀刻模板及蚀刻工艺技术的限制，QFN产品一直延续着单圈引线框架模式。
QFN（Quad Flat No Lead Package）型多圈排列封装的集成电路封装技术是近几年国外发展起来的一种新型微小形高密度I/O封装技术，是最先进的表面贴装封装技术之一。具有无引脚、贴装占有面积小，安装高度低等特点，是为满足移动通信和移动计算机领域的便捷式电子机器，如PDA、3G手机、MP3、MP4、MP5等超薄型电子产品发展的需要应运而生并迅速成长起来的一种新型封装技术。但目前的四边扁平无引脚封装件的引脚少，即I/O少，焊线长、焊线成本高、频率应用受限制，满足不了高密度、多I/O封装的需要。
发明内容
为了克服上述现有技术中存在的问题，本发明的目的是提供一种四边扁平无引脚封装件，引脚多、焊线短，能满足高密度、多I/O封装的需要。
本发明的另一目的是提供一种上述封装件的生产方法。
为实现上述目的，本发明所采用的技术方案是：一种四边扁平无引脚封装件，包括引线框架载体，引线框架载体由载体凹坑和环绕载体凹坑设置的三圈引脚组成，该三圈引脚分别由多个互不相连的引脚组成，载体凹坑内粘贴有IC芯片，所有引脚上均镀有内引脚化学镀镍钯金层；内引脚化学镀镍钯金层与 IC芯片同向设置，IC芯片与内引脚化学镀镍钯金层之间通过键合线相连接；IC芯片、所有引脚镀有内引脚化学镀镍钯金层的一端和所有键合线均封装于塑封体内。
本发明所采用的另一技术方案是：一种上述四边扁平无引脚封装件的生产方法，具体按以下步骤进行：
步骤1：晶圆减薄划片和制作引线框架
采用普通QFN减薄方法进行晶圆减薄，得到最终厚度为150μm～200μm的晶圆；粗磨范围从原始晶圆片+胶膜厚度到最终厚度+胶膜厚度+50μm，粗磨速度3μm/s～6μm/s；精磨厚度范围从最终厚度+胶膜厚度+50μm到晶圆最终厚度+胶膜厚度，精磨速度为10μm/min～20μm/min，采用防止碎片工艺；对减薄后的晶圆进行划片，得到IC芯片，应用防碎片、防裂纹划片工艺软件控制技术，划片进刀速度≤10mm/s；
制作引线框架：
第一步，取厚度为6mil～8mil的铜板，预处理该铜板表面并粗化，得到引线框架基体；
第二步，以丝网漏印的方式将感光油墨均匀地涂覆于引线框架基体的一个表面，在75℃～80℃的温度下烘烤10分钟，使感光油墨硬化；用UV紫外线照射底片，在引线框架基体表面形成图形；用浓度为0.8g/L～1.2g/L 的Na2CO3腐蚀液处理经UV紫外线照射的感光油墨，在引线框架基体表面形成厚度为10μm～15μm的不连续的第一感光胶层；
第三步，在未被第一感光胶层覆盖的引线框架基体表面区域化学镀镍钯金，在该区域形成厚度为0.5μm～5μm的内引脚化学镀镍钯金层； 
第四步，用浓度3%～5%的氢氧化钠腐蚀液去掉引线框架基体表面上的第一感光胶层，引线框架基体表面留下内引脚化学镀镍钯金层，水洗；
第五步，在引线框架基体有内引脚化学镀镍钯金层的表面涂覆感光油墨，涂覆方法和后续的处理方法同上述第二步，在内引脚化学镀镍钯金层表面形成厚度为10μm～20μm的第二感光胶层；
第六步，用三氯化铁蚀刻液对引线框架基体有第二感光胶层的表面进行半腐蚀，该表面没有覆盖第二感光胶层的区域被三氯化铁蚀刻液腐蚀，腐蚀深度为0.06mm±5μm，在该表面形成载体凹坑、多个第一内引脚、多个第二内引脚和多个第三内引脚，多个第一内引脚形成第一圈内引脚，多个第二内引脚形成第二圈内引脚，多个第三内引脚形成第三圈内引脚； 
第七步，用氢氧化钠腐蚀液去掉第二感光胶层，水洗，得到引线框架；
步骤2：上芯
将IC芯片粘贴于载体凹坑底面；上芯完成后送固化，采用ESPEC烘烤箱，防离层工艺烘烤，烘烤温度175℃±5℃，烘烤3h+0.5h；
步骤3：从IC芯片向引线框架的各个内引脚焊线；
步骤4：选用吸水率≤0.35%、膨胀系数a1≤1的环保型塑封料；进行塑封，得到半成品，塑封过程中采用超薄型封装防翘曲工艺和多段注塑防翘曲软件控制技术进行防冲丝、防离层封装；
步骤5：使用充氯气、通风流畅、温度控制灵活、温度偏差小于±3℃的烘箱，将塑封后的半产品后固化5小时，后固化温度为150±3℃，后固化过程中采用QFN防翘曲固化夹具；
步骤6：同常规QFN打印；
步骤7：电镀及分离引脚
采用高精度高稳定性的金属蚀刻机，将三氯化铁腐蚀液喷涂到引线框架背面，对引线框架背面进行腐蚀减薄，腐蚀减薄厚度为0.03mm～0.04mm，精度控制在±5μm；腐蚀后用两段去离子水清洗残留在引线框架表面的腐蚀液；用稀硫酸腐蚀液或盐酸腐蚀液活化引线框架表面，并去除引线框架表面的氧化物；再经过五段自来水彻底清洗引线框架表面的腐蚀药液、酸洗药液；强风和热风烘干；在引线框架腐蚀减薄后的表面电镀厚度8μm～10μm的铜层，接着在电镀铜层表面电镀厚度7μm～15μm的纯锡层，最后用激光从引线框架背面进行切割，实现引脚分离；
或者，先在引线框架背面电镀厚度7μm～15μm的纯锡层，再用刀片切割引线框架背面，切割深度0.03mm～0.04mm，切割深度精度控制在±5μm，切割宽度0.2mm～0.25mm；然后用激光在刀片切割处烧蚀掉引脚之间相连的部分，实现引脚分离； 
或者，先在引线框架背面电镀厚度7μm～15μm的纯锡层，用水刀切割引线框架背面，实现引脚分离；
步骤8：将单元产品从框架上分离；
步骤9：测试/编带
本封装常规测试同传统QFN产品的O/S及开短路测试，同时还需进行电性能及热性能测试，确保产品的高良率和高可靠性；制得四边扁平无引脚封装件。
本发明生产方法采用激光切割分离引脚，实现引脚的分离，制得具有多圈排列引线框架的封装件，该封装件的I/O数更多，体积更小，重量更轻，并有优越的电性能和热性能，特别适合任何一个对尺寸、重量和性能都有要求的应用。克服了现有普通四边扁平无引脚封装（QFN）单面封装时引脚数少、焊线长、焊线成本高、频率应用受限制的问题。
附图说明
图1是本发明四边扁平无引脚封装件第一种实施例的结构示意图。
图2是图1的仰视图。
图3是本发明四边扁平无引脚封装件第二种实施例的结构示意图。
图4是图3的仰视图。
图5是本发明四边扁平无引脚封装件第三种实施例的结构示意图。
图6是图5的仰视图。
图7 是本发明封装件引线框架载体制作过程中铜板表面涂覆第一层感光油墨后，通过曝光、显影形成不同开窗图形的框架剖面图。
图8是在图7所示框架表面未被感光油墨覆盖区域化学镀镍钯金后的框架剖面图。
图9是去除第一感光胶层后的框架剖面图。
图10是再次涂覆感光油墨，通过曝光、显影在化学镀区的表面覆盖第二感光胶层的框架剖面图。
图11是在未被感光胶保护的区域进行半蚀刻后的框架剖面图。
图12去除第二感光胶层后的框架剖面图。
图13是压焊塑封后的框架剖面图。
图14是采用腐蚀工艺腐蚀引线框架载体背面的示意图。
图中：1.引线框架载体，2.粘片胶，3.IC芯片，4.焊盘，5.第一内引脚，6.第二内引脚，7.第三内引脚，8.第一键合线，9.第二键合线，10.第三键合线，11.内引脚化学镀镍钯金层，12.第一凹坑，13.第二凹坑，14.载体凹坑，15.塑封体，16.腐蚀减薄层，17.第一激光切割道，18.第二激光切割道，19.第一刀片切割道，20.第二刀片切割道，21.第一微水刀激光切割道，22.第二微水刀激光切割道，23.第一感光胶层，24.第二感光胶层，25.引线框架基体。
具体实施方式
下面结合附图和具体实施方式对本发明进行详细说明。
如图1和图2所示，本发明四边扁平无引脚封装件第一种实施例的结构，包括引线框架载体1，引线框架载体1上面有载体凹坑14，环绕载体凹坑14设有三圈内引脚，该三圈内引脚由内往外依次为第一圈内引脚、第二圈内引脚和第三圈内引脚，第一圈内引脚和第二圈内引脚之间为第二凹坑13，第二圈内引脚和第三圈内引脚之间为第一凹坑12；第一圈内引脚由多个互不相连的第一内引脚5组成，第二圈内引脚由多个互不相连的第二内引脚6组成，第三圈内引脚由多个互不相连的第三内引脚7组成，所有的内引脚上面均设有内引脚化学镀镍钯金层11；引线框架载体1的背面有第一激光切割道17和第二激光切割道18，第一激光切割道17与第一凹坑12相通，第二激光切割道18与第二凹坑13相通；载体凹坑14底面粘贴有IC芯片3，IC芯片3通过粘片胶2与引线框架载体1粘接，粘片胶2采用导电胶或绝缘胶，IC芯片3上设有焊盘4；焊盘4通过第一键合线8与第一内引脚5相连接，焊盘4通过第二键合线9与第二内引脚6相连接，焊盘4通过第三键合线10与第三内引脚7相连接；引线框架载体1上面塑封有塑封体15；载体凹坑14、焊盘4、第一键合线8、第二键合线9、第三键合线10、各内引脚上的内引脚化学镀镍钯金层11、第一内引脚5、第二内引脚6、第三内引脚7和引线框架载体1侧壁的上部均封装于塑封体15内。
图3和图4所示为本发明四边扁平无引脚封装件第二种实施例的结构，与图和图2所示第一种实施例的结构基本相同，两者的区别是：本实施例中第一激光切割道17下面有与第一激光切割道17相通的第一刀片切割道19；第二激光切割道18下面有与第二激光切割道18相通的第二刀片切割道20。
本发明四边扁平无引脚封装件第三种实施例如图5和图6所示，其结构与第一种实施例的结构基本相同，两者之间的区别在于：本实施例中用第一微水刀激光切割道21取代了第一激光切割道17，第一微水刀激光切割道21与第一凹坑12相通；用第二微水刀激光切割道22取代了第二激光切割道18，第二微水刀激光切割道22与第二凹坑13相通。
塑封体15包围了多圈引线框架载体1上表面和侧面、粘片胶2、IC芯片3、焊盘4、内引脚的上表面部分和侧面部分以及相邻引脚间的上表面凹坑，形成了电路整体。IC芯片3、焊盘4、粘片胶2以及内引脚构成了电源和信号通道。塑封体15对IC芯片3、焊盘4、内引脚和键合线起到了保护和支撑作用。
本发明提供了生产上述各封装件的工艺流程：
1）第一种实施例封装件
晶圆减薄划片和引线框架载体的制作→上芯→压焊→塑封→后固化→打印→腐蚀减薄→电镀→激光分离引脚→产品分离→外观检验→测试/编带→包装→入库。
2）第二种实施例封装件
晶圆减薄划片和引线框架载体的制作→上芯→压焊→塑封→后固化→打印→电镀→刀片切割→激光分离引脚→产品分离→外观检验→测试/编带→包装→入库。
3）第三种实施例封装件
晶圆减薄和引线框架载体的制作→上芯→压焊→塑封→后固化→打印→电镀→微水刀激光分离引脚→产品分离→外观检验→测试/编带→包装→入库。
本发明还提供了一种上述封装件的生产方法，具体按以下步骤进行：
步骤1：晶圆减薄划片和制作引线框架
采用普通QFN减薄方法进行晶圆减薄，得到最终厚度为150μm～200μm的晶圆；粗磨厚度范围从原始晶圆片+胶膜厚度到最终厚度+胶膜厚度+50μm，粗磨速度3μm/s～6μm/s；精磨厚度范围从最终厚度+胶膜厚度+50μm到晶圆最终厚度+胶膜厚度，精磨速度为10μm/min～20μm/min，采用防止碎片工艺；6英寸到8英寸晶圆减薄使用VG-502MK Ⅱ8B全自动减薄机，8英寸到12英寸晶圆采用PG300RM/TCN全自动减薄机；对减薄后的晶圆进行划片，得到IC芯片3，划片过程中：8英寸及8英寸以下的晶圆采用DISC 3350划片机或双刀划片机划片，8英寸到12英寸晶圆采用A-WD-300TXB划片机划片，应用防碎片、防裂纹划片工艺软件控制技术，划片进刀速度≤10mm/s；
制作引线框架：
第一步，取厚度为6～8mil的铜板，对该铜板表面进行预处理，包括除油、微蚀、酸洗和水洗，去除铜板表面的油污、指印和氧化物，并使铜板表面粗化，得到引线框架基体25；
第二步，以丝网漏印的方式将感光油墨均匀地涂覆于引线框架基体25的一个表面上，在75～80℃的温度下烘烤10分钟，使感光油墨内的有机溶剂挥发，感光油墨硬化，牢固附着于引线框架基体25表面；用UV紫外线照射底片，透光与不透光区造成感光与未感光的油墨化学聚合差异，而在引线框架基体25表面形成图形；然后用浓度为0.8～1.2g/L 的Na2CO3腐蚀液处理经UV紫外线照射的感光油墨，由于感光的油墨不溶于弱碱，未感光的油墨溶解于Na2CO3腐蚀液中，将感光的油墨留在引线框架基体25表面，在引线框架基体25表面形成厚度为10～15μm的不连续的第一感光胶层23，如图7所示；
第三步，在未被第一感光胶层23覆盖的引线框架基体25表面区域化学镀镍钯金，在该区域形成厚度为0.5μm～5μm的内引脚化学镀镍钯金层11，提高打线良率，如图8 所示； 
第四步，用浓度3%～5%的氢氧化钠腐蚀液去掉引线框架基体25表面上的第一感光胶层23，在引线框架基体25表面留下内引脚化学镀镍钯金层11，如图9所示，然后进行水洗；
第五步，在引线框架基体25有内引脚化学镀镍钯金层11的表面涂覆感光油墨，涂覆方法和后续的处理方法同上述第二步，在内引脚化学镀镍钯金层11表面形成厚度为10μm～20μm的第二感光胶层24，如图10 所示；
第六步，用三氯化铁蚀刻液对引线框架基体25有第二感光胶层24的表面进行半腐蚀，该表面没有覆盖第二感光胶层24的区域被三氯化铁蚀刻液腐蚀，腐蚀深度为0.06mm±5μm，在该表面形成载体凹坑14、多个第一内引脚5、多个第二内引脚6和多个第三内引脚7，多个第一内引脚5形成第一圈内引脚，多个第二内引脚6形成第二圈内引脚，多个第三内引脚7形成第三圈内引脚，第一圈内引脚和第二圈内引脚之间为第二凹坑13，第二圈内引脚和第三圈内引脚之间为第一凹坑12，第一圈内引脚环绕在载体凹坑14周围，如图11所示； 
第七步，用氢氧化钠腐蚀液去掉第二感光胶层24，然后水洗，得到如图12所示的引线框架；
步骤2：上芯
采用AD889上芯机或AD829上芯机等，通过粘片胶2将IC芯片3粘贴于载体凹坑14的底面，粘片胶2使用导电胶或绝缘胶；上芯完成后送固化，采用ESPEC烘烤箱，防离层工艺烘烤，烘烤温度175℃±5℃，烘烤3h+0.5h；
步骤3：压焊
采用ASM eagle60焊线机或W 3100 plus optima焊线机等设备，将金线或铜线从IC芯片3上的每一个焊盘4向引线框架的各个内引脚焊线，采用“M”型弧、高低弧或反向等多种方式打线，保证焊线间不短路，连接焊盘4与第一内引脚5的焊线为第一键合线8，连接焊盘4与第二内引脚6的焊线为第二键合线9，连接焊盘4与第三内引脚7的焊线为第三键合线10；
步骤4：塑封
选用低吸湿性（吸水率≤0.35%）、低应力（膨胀系数a1≤1）的环保型塑封料；进行塑封，得到半成品，如图13所示，塑封过程中采用超薄型封装防翘曲工艺和多段注塑防翘曲软件控制技术进行防冲丝、防离层封装，解决了冲丝、翘曲和离层的难题；
步骤5：后固化
使用充氯气、通风流畅、温度控制灵活、温度偏差小于±3℃的烘箱，将塑封后的半产品后固化5小时，后固化温度为150±3℃，后固化过程中采用QFN防翘曲固化夹具；
步骤6：同常规QFN打印；
步骤7：电镀及分离引脚
采用高精度高稳定性的金属蚀刻机对引线框架背面进行腐蚀减薄，腐蚀掉一层腐蚀减薄层16，如图14所示，使引线框架基体25的厚度减少，腐蚀减薄层的厚度为0.03mm～0.04mm，精度控制在±5μm；减薄流程为：入板—腐蚀—两段水洗—酸洗—五段水洗—烘干—出板。腐蚀药液采用三氯化铁腐蚀液，因为三氯化铁腐蚀液具有很高的腐蚀速率、高的溶铜率，并容易控制，设备投资低，符合量产化要求；并且所采用的框架为铜合金材料，三氯化铁对合金材料具有很好的腐蚀效果。在腐蚀段，为保证板面腐蚀的均匀性，药液以喷淋的方式喷涂到框架背面，喷淋压力3bar～4bar，并采用下喷淋，以减小“水塘效应”；腐蚀后用两段去离子水清洗残留在引线框架表面的腐蚀液，水的压力为2.0～4.0kg/cm2；酸洗主要是用稀硫酸腐蚀液或盐酸腐蚀液活化引线框架表面，并去除引线框架表面的氧化物；再经过五段自来水洗彻底将引线框架表面的腐蚀药液、酸洗药液清洗干净，各段自来水的压力为2.0～4.0kg/cm2；烘干是先强风吹干，然后再热风烘干，以达到烘干效果；然后在引线框架腐蚀减薄后的表面电镀一层厚度为8μm～10μm的铜，在引线框架背面形成过渡铜层，为后续再镀纯锡做准备，接着在电镀铜层的表面电镀一层厚度为7μm～15μm的纯锡，最后利用激光从引线框架背面进行切割，形成与第一凹坑12相通的第一激光切割道17和与第二凹坑13相通的第二激光切割道18，再切断各引脚之间相连的部分及引脚与载体相连的部分，实现引脚分离；
或者，先在引线框架背面电镀一层厚度为7μm～15μm的纯锡，再用刀片从引线框架背面进行切割，切割深度为0.03mm～0.04mm，切割深度精度控制在±5μm，切割宽度为0.2mm～0.25mm；以减小激光切割深度和切割宽度，降低激光热扩散、热烧伤的影响，提高激光切缝的质量；形成与第一凹坑12相对应的第一刀片切割道19和与第二凹坑13相对应的第二刀片切割道20，然后利用激光在刀片切割处烧蚀掉引脚之间相连的部分，实现引脚分离；激光切缝宽度为刀片切割宽度的一半，要求激光切缝边缘整齐，满足产品外观质量要求；
或者，先在引线框架背面电镀一层厚度为7μm～15μm的纯锡，然后直接用水刀在引线框架背面切割出于第一凹坑12相通的第一微水刀激光切割道21和与第二凹坑13相通的第二微水刀激光切割道22，切断引脚之间相连的部分及引脚与载体相连的部分，实现引脚分离；
采用高精度的固体紫外激光切割机切断引脚间的连筋，实现引脚分离。
本发明封装件中的引线框架为无引脚多圈排列，通过成熟的涂胶、曝光、显影、蚀刻等工艺将较薄的铜板制成多圈QFN框架。在框架制造过程中，多圈QFN引脚间的连接处已被腐蚀出了一半铜板厚度的凹坑，使得载体也下凹了一半深度。此框架的特点是载体下凹，这样做的目的是降低键合线的弧度和长度，有效防止塑封时的冲丝，节约成本。此外，载体下凹还能有效防止粘片胶（导电胶或绝缘胶）的溢出，且载体与塑封料的粘接面积更大，产品的可靠性将会得到很大改善。封装后的框架经过上芯、压焊、塑封、后固化及电镀后，其正面被塑封料所覆盖，凹坑处被塑封料填充，背面仍然是铜。然后通过腐蚀、刀片切割辅助工艺对框架背面进行减薄，再利用激光从框架背面烧蚀引脚连筋，实现引脚分离。 
由于铜具有良好的导热（热扩散率1.19cm2/s，热传导系数4.01W/cm°C）、导电（导电率为6×103s/m）特性，激光切割时在切缝两侧会产生热影响区，使得切缝边缘热影响区的铜极易被氧化，并以熔渣形式牢固地附着在切缝内，激光切割加工时的熔渣状况直接决定着切缝的质量，而熔渣的形成很大程度上取决于切割时铜板产生热量的大小与氧化的程度。实验表明：影响熔渣的主要因素为铜薄厚度、切割速度、激光功率、除渣气体的种类和该气体压力的大小。所以，在成熟的激光切割工艺基础上可以设置合适的切割参数，选择除渣效果好的氮气作为辅助气体；同时将框架厚度进行减薄，降低激光切割热量的扩散，以最大限度地减小切缝边缘热影响区因氧化形成的熔渣，从而达到改善切缝质量的目的。此外，铜在激光材料加工中属于难加工材料，因为铜的热反射率高，对激光的吸收率很低，普通的CO2激光及Nd：YAG激光很难对铜进行微细加工；但铜对波长较短的固体紫外激光却具有较高的吸收率，而且紫外光加工材料过程为“光蚀”效应，高能量的光子直接破坏材料的化学键，是“冷”处理过程，热影响区域微乎其微，对改善切缝质量有较大帮助。
在激光分离引脚的过程中，由于框架材料较厚，需要的激光功率相应较高，激光烧蚀断引脚间连筋的同时，激光功率不能瞬时降低，而塑封料的熔点比铜的熔点低，很容易烧蚀掉塑封料，进而损坏塑封料内的键合线。因此，也必须对框架进行减薄，以减小切割深度，降低激光的烧蚀功率，避免烧蚀塑封料，在降低激光烧蚀功率的同时也减小了切割热量的扩散，减少了熔渣数量，提高了切缝质量。本发明采用两种方法对封装件背面进行减薄：一是对封装件背面腐蚀减薄；二是对封装件的引脚连筋处先进行刀片开槽。
除了对框架进行减薄之外，还可以采用另一种全新的激光切割工艺-微水刀激光切割实现引脚的分离：将激光聚焦后导入比发丝还细的微水柱中，从而引导光束进行切割，并冷却工件，消除了传统激光热影响区过大的缺陷，大大提高了激光切割的质量。
.步骤8：产品分离
采用双刀切割机和切割专用夹具，使用切割刀将单元产品从框架上分离，在切割分离过程中考虑防胶体裂纹技术；
本方法切割分离采用切割刀，应用防胶体裂纹控制技术生产，从设计和生产上共同预防冲切分离时造成胶体碎裂的隐患；
步骤9：测试/编带
本封装常规测试同传统QFN产品的O/S及开短路测试，同时还需进行电性能及热性能测试，确保产品的高良率和高可靠性；制得四边扁平无引脚封装件。
本发明是在较为成熟的单圈QFN集成电路封装技术的基础上，开发四边扁平无引脚多圈排列引线框架及多圈排列引脚的高密度封装技术，通过激光切割实现多圈排列引脚分离。
本发明生产方法利用激光实现引脚分离。针对激光切割深度难以控制，以及热影响区大小与切割深度成正比的问题，采用较薄的框架，并增加腐蚀减薄、刀片切割工艺，先对封装件适当减薄，以降低激光热灼伤的影响。同时还采用了一种全新的激光切割工艺-微水刀激光切割，切割深度容易控制，并能大大降低激光切割带来的热灼伤问题，实现简单。
本发明四边扁平无引脚封装件能够满足高I/O密度、高可靠性、小型化、薄型化、低成本的要求。
实施例1
采用普通QFN减薄方法进行晶圆减薄，得到最终厚度为150μm的晶圆；粗磨厚度范围从原始晶圆片+胶膜厚度到155μm+胶膜厚度，粗磨速度3μm/s；精磨范围从155μm+胶膜厚度到150μm+胶膜厚度，精磨速度为10μm/min，采用防止碎片工艺；采用DISC 3350划片机对减薄后的晶圆进行划片，得到IC芯片，应用防碎片防裂纹划片工艺软件控制技术，划片进刀速度≤10mm/s；
制作引线框架载体：
第一步，取厚度为6mil的铜板，对其表面进行除油、微蚀、酸洗和水洗等预处理，去除铜板表面的油污、指印和氧化物，并粗化铜板表面，得到引线框架基体；
第二步，以丝网漏印的方式将感光油墨均匀地涂覆于引线框架基体的一个表面上，在80℃的温度下烘烤10分钟，使感光油墨内的有机溶剂挥发，感光油墨硬化，牢固附着于引线框架基体表面；用UV紫外线照射底片，透光与不透光区造成感光与未感光的油墨化学聚合差异，在引线框架基体表面形成图形；然后用浓度为0.8g/L 的Na2CO3腐蚀液处理经UV紫外线照射的感光油墨，将感光的油墨留在引线框架基体表面，在引线框架基体表面形成厚度为10μm的不连续的第一感光胶层；
第三步，在未被第一感光胶层覆盖的引线框架基体表面区域化学镀镍钯金，在该区域形成厚度为5μm的内引脚化学镀镍钯金层； 
第四步，用浓度3%的氢氧化钠腐蚀液去掉引线框架基体表面上的第一感光胶层，在引线框架基体表面留下内引脚化学镀镍钯金层，然后进行水洗；
第五步，在引线框架基体有内引脚化学镀镍钯金层的表面涂覆感光油墨，涂覆方法和后续的处理方法同上述第二步，在内引脚化学镀镍钯金层的表面形成厚度为10μm的第二感光胶层；
第六步，用三氯化铁蚀刻液对引线框架基体有第二感光胶层的表面进行半腐蚀，该表面没有覆盖第二感光胶层的区域被三氯化铁蚀刻液腐蚀，腐蚀深度为0.06mm，在该表面形成载体凹坑、多个第一内引脚、多个第二内引脚和多个第三内引脚，多个第一内引脚形成第一圈内引脚，多个第二内引脚形成第二圈内引脚，多个第三内引脚形成第三圈内引脚，第一圈内引脚和第二圈内引脚之间为第二凹坑，第二圈内引脚和第三圈内引脚之间为第一凹坑，第一圈内引脚环绕在载体凹坑周围； 
第七步，用氢氧化钠腐蚀液去掉第二感光胶层，然后水洗，得到引线框架；
采用AD889上芯机，通过导电胶将IC芯片粘贴于载体凹坑底面；上芯完成后送固化，采用ESPEC烘烤箱，防离层工艺烘烤，烘烤温度175℃，烘烤3h；采用ASM eagle60焊线机，将金线从IC芯片上的每一个焊盘向引线框架的各内引脚焊线，采用“M”型弧，保证焊线间不短路；选用低吸水率≤0.35%、膨胀系数a1≤1的环保型塑封料；进行塑封，得到半成品，塑封过程中采用超薄型封装防翘曲工艺和多段注塑防翘曲软件控制技术进行防冲丝、防离层封装，解决了冲丝、翘曲和离层的难题；使用充氯气、通风流畅、温度控制灵活、温度偏差小于±3℃的烘箱，将塑封后的半产品后固化5小时，后固化温度为150℃，后固化过程中采用QFN防翘曲固化夹具；同常规QFN打印；采用高精度高稳定性的金属蚀刻机将三氯化铁腐蚀液以下喷淋方式喷涂到引线框架背面，喷淋压力3bar，对引线框架背面进行腐蚀减薄，腐蚀减薄厚度0.03mm，精度控制在±5μm；腐蚀后用压力为2.0kg/cm2的两段去离子水清洗残留在引线框架表面的腐蚀液；然后用稀硫酸腐蚀液活化引线框架表面，并去除引线框架表面的氧化物；再经过压力为4.0kg/cm2的五段自来水洗彻底清洗引线框架表面的腐蚀药液、酸洗药液；经强风和热风烘干；然后在引线框架腐蚀减薄后的表面电镀厚度8μm的铜层，形成过渡铜层，接着在电镀铜层的表面电镀厚度为15μm的纯锡层，最后利用高精度的固体紫外激光切割机从引线框架背面进行切割，再切断各引脚之间相连的部分及引脚与载体相连的部分，实现引脚分离；采用双刀切割机和切割专用夹具，将单元产品从框架上分离，在切割分离过程中考虑防胶体裂纹技术；采用同传统QFN产品的O/S及开短路测试，并进行电性能及热性能测试，确保产品的高良率和高可靠性；制得四边扁平无引脚封装件。
实施例2
采用普通QFN减薄方法进行晶圆减薄，得到最终厚度为200μm的晶圆；粗磨厚度范围从原始晶圆片+胶膜厚度到250μm+胶膜厚度，粗磨速度6μm/s；精磨范围从250μm+胶膜厚度到200μm+胶膜厚度，精磨速度为20μm/min，采用防止碎片工艺；采用双刀划片机对减薄后的晶圆进行划片，得到IC芯片3，应用防碎片、防裂纹划片工艺软件控制技术，划片进刀速度≤10mm/s；
制作引线框架：
第一步，取厚度为8mil的铜板，对该铜板表面进行除油、微蚀、酸洗和水洗等预处理，去除铜板表面的油污、指印和氧化物，并粗化铜板表面，得到引线框架基体；
第二步，以丝网漏印的方式将感光油墨均匀地涂覆于引线框架基体的一个表面上，在75℃的温度下烘烤10分钟，使感光油墨内的有机溶剂挥发，感光油墨硬化，牢固附着于引线框架基体表面；用UV紫外线照射底片，透光与不透光区造成感光与未感光的油墨化学聚合差异，而在引线框架基体表面形成图形；然后用浓度为1.2g/L 的Na2CO3腐蚀液处理经UV紫外线照射的感光油墨，感光的油墨留在引线框架基体表面，在引线框架基体表面形成厚度为15μm的不连续的第一感光胶层；
第三步，在未被第一感光胶层覆盖的引线框架基体表面区域化学镀镍钯金，在该区域形成厚度为3μm的内引脚化学镀镍钯金层； 
第四步，用浓度5%的氢氧化钠腐蚀液去掉引线框架基体表面上的第一感光胶层，在引线框架基体表面留下内引脚化学镀镍钯金层，然后水洗；
第五步，在引线框架基体有内引脚化学镀镍钯金层的表面涂覆感光油墨，涂覆方法和后续的处理方法同上述第二步，在内引脚化学镀镍钯金层表面形成厚度为20μm的第二感光胶层；
第六步，用三氯化铁蚀刻液对引线框架基体有第二感光胶层的表面进行半腐蚀，该表面没有覆盖第二感光胶层的区域被三氯化铁蚀刻液腐蚀，腐蚀深度为0.065mm，在该表面形成载体凹坑、多个第一内引脚、多个第二内引脚和多个第三内引脚，多个第一内引脚形成第一圈内引脚，多个第二内引脚形成第二圈内引脚，多个第三内引脚形成第三圈内引脚； 
第七步，用氢氧化钠腐蚀液去掉第二感光胶层，然后水洗，得到引线框架；
采用AD829上芯机，通过绝缘胶将IC芯片粘贴于载体凹坑底面；上芯完成后送固化，采用ESPEC烘烤箱，防离层工艺烘烤，烘烤温度180℃，烘烤3.5h；采用或W 3100 plus optima焊线机，将铜线从IC芯片上的每一个焊盘向引线框架的各内引脚焊线，采用高低弧，保证焊线间不短路；选用吸水率≤0.35%、膨胀系数a1≤1的环保型塑封料；进行塑封，得到半成品，塑封过程中采用超薄型封装防翘曲工艺和多段注塑防翘曲软件控制技术进行防冲丝、防离层封装，解决了冲丝、翘曲和离层的难题；使用充氯气、通风流畅、温度控制灵活、温度偏差小于±3℃的烘箱，将塑封后的半产品后固化5小时，后固化温度为153℃，后固化过程中采用QFN防翘曲固化夹具；同常规QFN打印；采用高精度高稳定性的金属蚀刻机将三氯化铁腐蚀液以下喷淋方式喷涂到引线框架背面，喷淋压力4bar，对引线框架背面进行腐蚀减薄，腐蚀减薄层厚度0.04mm，精度控制在±5μm；腐蚀后用压力为4.0kg/cm2的两段去离子水清洗残留在引线框架表面的腐蚀液，然后用盐酸腐蚀液活化引线框架表面，并去除引线框架表面的氧化物；再经压力为2.0kg/cm2的五段自来水彻底清洗引线框架表面的腐蚀药液、酸洗药液；经强风和热风烘干；在引线框架腐蚀减薄后的表面电镀厚度10μm的铜层，形成过渡铜层；接着在电镀铜层的表面电镀厚度7μm的纯锡层，最后采用高精度的固体紫外激光切割机激光从引线框架背面进行切割，再切断各引脚之间相连的部分及引脚与载体相连的部分，实现引脚分离；采用双刀切割机和切割专用夹具，将单元产品从框架上分离，在切割分离过程中考虑防胶体裂纹技术；采用同传统QFN产品的O/S及开短路测试，并进行电性能及热性能测试，确保产品的高良率和高可靠性；制得四边扁平无引脚封装件。
实施例3
采用普通QFN减薄方法进行晶圆减薄，得到最终厚度为175μm的晶圆；粗磨厚度范围从原始晶圆片+胶膜厚度225μm+胶膜厚度，粗磨速度4.5μm/s；精磨厚度范围从225μm+胶膜到175μm+胶膜厚度，精磨速度为15μm/min，采用防止碎片工艺；采用A-WD-300TXB划片机对减薄后的晶圆进行划片，得到IC芯片3，应用防碎片、防裂纹划片工艺软件控制技术，划片进刀速度≤10mm/s；
制作引线框架：
第一步，取厚度为7mil的铜板，对该铜板表面进行除油、微蚀、酸洗和水洗等预处理，去除铜板表面的油污、指印和氧化物，并使铜板表面粗化，得到引线框架基体；
第二步，以丝网漏印的方式将感光油墨均匀地涂覆于引线框架基体的一个表面上，在77.5℃的温度下烘烤10分钟，使感光油墨内的有机溶剂挥发，感光油墨硬化，牢固附着于引线框架基体表面；用UV紫外线照射底片，透光与不透光区造成感光与未感光的油墨化学聚合差异，而在引线框架基体表面形成图形；然后用浓度为1.0g/L 的Na2CO3腐蚀液处理经UV紫外线照射的感光油墨，感光的油墨留在引线框架基体表面，在引线框架基体表面形成厚度12.5μm的不连续的第一感光胶层；
第三步，在未被第一感光胶层覆盖的引线框架基体表面区域化学镀镍钯金，在该区域形成厚度为0.5μm的内引脚化学镀镍钯金层； 
第四步，用浓度4%的氢氧化钠腐蚀液去掉引线框架基体表面上的第一感光胶层，在引线框架基体表面留下内引脚化学镀镍钯金层，水洗；
第五步，在引线框架基体有内引脚化学镀镍钯金层的表面涂覆感光油墨，涂覆方法和后续的处理方法同上述第二步，在内引脚化学镀镍钯金层表面形成厚度为15μm的第二感光胶层；
第六步，用三氯化铁蚀刻液对引线框架基体有第二感光胶层的表面进行半腐蚀，该表面没有覆盖第二感光胶层的区域被三氯化铁蚀刻液腐蚀，腐蚀深度为0.055mm，在该表面形成载体凹坑、多个第一内引脚、多个第二内引脚和多个第三内引脚，多个第一内引脚形成第一圈内引脚，多个第二内引脚形成第二圈内引脚，多个第三内引脚形成第三圈内引脚； 
第七步，用氢氧化钠腐蚀液去掉第二感光胶层，水洗，得到引线框架；
采用AD889上芯机，通过导电胶将IC芯片粘贴于载体凹坑底面；上芯完成后送固化，采用ESPEC烘烤箱，防离层工艺烘烤，烘烤温度170℃，烘烤3.3h；采用ASM eagle60焊线机，将金线从IC芯片上的每一个焊盘向引线框架的各内引脚焊线，采用反向方式打线，保证焊线间不短路；选用吸水率≤0.35%、膨胀系数a1≤1的环保型塑封料；进行塑封，得到半成品，塑封过程中采用超薄型封装防翘曲工艺和多段注塑防翘曲软件控制技术进行防冲丝、防离层封装，解决了冲丝、翘曲和离层的难题；使用充氯气、通风流畅、温度控制灵活、温度偏差小于±3℃的烘箱，将塑封后的半产品后固化5小时，后固化温度为147℃，后固化过程中采用QFN防翘曲固化夹具；同常规QFN打印；采用高精度高稳定性的金属蚀刻机将三氯化铁腐蚀液以下喷淋方式喷涂到引线框架背面，喷淋压力3.5bar，对引线框架背面进行腐蚀减薄，腐蚀减薄层的厚度为0.035mm，精度控制在±5μm；腐蚀后用压力为3.0kg/cm2的两段去离子水清洗残留在引线框架表面的腐蚀液；用稀硫酸腐蚀液活化引线框架表面，并去除引线框架表面的氧化物；再经过压力为3.0kg/cm2的五段自来水彻底清洗引线框架表面的腐蚀药液、酸洗药液；强风和热风烘干；在引线框架腐蚀减薄后的表面电镀厚度9μm的铜层，形成过渡铜层，接着在电镀铜层的表面电镀厚度11μm的纯锡层，采用高精度的固体紫外激光切割机从引线框架背面进行切割，再切断各引脚之间相连的部分及引脚与载体相连的部分，实现引脚分离；采用双刀切割机和切割专用夹具，将单元产品从框架上分离，在切割分离过程中考虑防胶体裂纹技术；采用同传统QFN产品的O/S及开短路测试，并进行电性能及热性能测试，确保产品的高良率和高可靠性；制得四边扁平无引脚封装件。
实施例4
按实施例1的方法进行晶圆减薄划片、制作引线框架、上芯、压焊、塑封、后固化和打印；然后在引线框架背面电镀厚度7μm的纯锡层，用刀片切割引线框架背面，切割深度0.03mm，精度控制在±5μm，切割宽度0.2mm；再采用高精度的固体紫外激光切割机在刀片切割处烧蚀掉各引脚之间相连的部分，实现引脚分离；激光切缝宽度为刀片切割宽度的一半；然后按实施例1的方法制得四边扁平无引脚封装件。
实施例5
按实施例2的方法进行晶圆减薄划片、制作引线框架、上芯、压焊、塑封、后固化和打印；然后在引线框架背面电镀厚度15μm的纯锡层，用刀片切割引线框架背面，切割深度0.04mm，精度控制在±5μm，切割宽度0.25mm；再采用高精度的固体紫外激光切割机在刀片切割处烧蚀掉各引脚之间相连的部分，实现引脚分离；激光切缝宽度为刀片切割宽度的一半；然后按实施例2的方法制得四边扁平无引脚封装件。
实施例6
按实施例3的方法进行晶圆减薄划片、制作引线框架、上芯、压焊、塑封、后固化和打印；然后在引线框架背面电镀厚度11μm的纯锡层，用刀片切割引线框架背面，切割深度0.035mm，精度控制在±5μm，切割宽度0.225mm；再采用高精度的固体紫外激光切割机在刀片切割处烧蚀掉各引脚之间相连的部分，实现引脚分离；激光切缝宽度为刀片切割宽度的一半；然后按实施例3的方法制得四边扁平无引脚封装件。
实施例7
按实施例3的方法进行晶圆减薄划片、制作引线框架、上芯、压焊、塑封、后固化和打印；然后在引线框架背面电镀厚度15μm的纯锡层，用水刀切割引线框架背面，切断引脚之间相连的部分及引脚与载体相连的部分，实现引脚分离；然后按实施例3的方法制得四边扁平无引脚封装件。
实施例8
按实施例2的方法进行晶圆减薄划片、制作引线框架、上芯、压焊、塑封、后固化和打印；然后在引线框架背面电镀厚度11μm的纯锡层，用水刀切割引线框架背面，切断引脚之间相连的部分及引脚与载体相连的部分，实现引脚分离；然后按实施例2的方法制得四边扁平无引脚封装件。
实施例9
按实施例1的方法进行晶圆减薄划片、制作引线框架、上芯、压焊、塑封、后固化和打印；然后在引线框架背面电镀厚度7μm的纯锡层，用水刀切割引线框架背面，切断引脚之间相连的部分及引脚与载体相连的部分，实现引脚分离；然后按实施例1的方法制得四边扁平无引脚封装件。

Claims (6)

1.一种四边扁平无引脚封装件的生产方法，其特征在于，该生产方法具体按以下步骤进行：
步骤1：晶圆减薄划片和制作引线框架
采用普通QFN减薄方法进行晶圆减薄，得到最终厚度为150μm～200μm的晶圆；粗磨范围从原始晶圆片+胶膜厚度到最终厚度+胶膜厚度+50μm，粗磨速度3μm/s～6μm/s；精磨厚度范围从最终厚度+胶膜厚度+50μm到晶圆最终厚度+胶膜厚度，精磨速度为10μm/min～20μm/min，采用防止碎片工艺；对减薄后的晶圆进行划片，得到IC芯片，应用防碎片、防裂纹划片工艺软件控制技术，划片进刀速度≤10mm/s；
制作引线框架：
第一步，取厚度为6mil～8mil的铜板，预处理该铜板表面并粗化，得到引线框架基体；
第二步，以丝网漏印的方式将感光油墨均匀地涂覆于引线框架基体的一个表面，在75℃～80℃的温度下烘烤10分钟，使感光油墨硬化；用UV紫外线照射底片，在引线框架基体表面形成图形；用浓度为0.8g/L～1.2g/L 的Na2CO3腐蚀液处理经UV紫外线照射的感光油墨，在引线框架基体表面形成厚度为10μm～15μm的不连续的第一感光胶层；
第三步，在未被第一感光胶层覆盖的引线框架基体表面区域化学镀镍钯金，在该区域形成厚度为0.5μm～5μm的内引脚化学镀镍钯金层； 
第四步，用浓度3%～5%的氢氧化钠腐蚀液去掉引线框架基体表面上的第一感光胶层，引线框架基体表面留下内引脚化学镀镍钯金层，水洗；
第五步，在引线框架基体有内引脚化学镀镍钯金层的表面涂覆感光油墨，涂覆方法和后续的处理方法同上述第二步，在内引脚化学镀镍钯金层表面形成厚度为10μm～20μm的第二感光胶层；
第六步，用三氯化铁蚀刻液对引线框架基体有第二感光胶层的表面进行半腐蚀，该表面没有覆盖第二感光胶层的区域被三氯化铁蚀刻液腐蚀，腐蚀深度为0.06mm±5μm，在该表面形成载体凹坑、多个第一内引脚、多个第二内引脚和多个第三内引脚，多个第一内引脚形成第一圈内引脚，多个第二内引脚形成第二圈内引脚，多个第三内引脚形成第三圈内引脚； 
第七步，用氢氧化钠腐蚀液去掉第二感光胶层，水洗，得到引线框架；
步骤2：上芯
将IC芯片粘贴于载体凹坑底面；上芯完成后送固化，采用ESPEC烘烤箱，防离层工艺烘烤，烘烤温度175℃±5℃，烘烤3h+0.5h；
步骤3：从IC芯片向引线框架的各个内引脚焊线；
步骤4：选用吸水率≤0.35%、膨胀系数a1≤1的环保型塑封料；进行塑封，得到半成品，塑封过程中采用超薄型封装防翘曲工艺和多段注塑防翘曲软件控制技术进行防冲丝、防离层封装；
步骤5：使用充氯气、通风流畅、温度控制灵活、温度偏差小于±3℃的烘箱，将步骤4中的半成品后固化5小时，后固化温度为150±3℃，后固化过程中采用QFN防翘曲固化夹具；
步骤6：同常规QFN打印；
步骤7：电镀及分离引脚
采用高精度高稳定性的金属蚀刻机，将三氯化铁腐蚀液喷涂到引线框架背面，对引线框架背面进行腐蚀减薄，腐蚀减薄厚度为0.03mm～0.04mm，精度控制在±5μm；腐蚀后用两段去离子水清洗残留在引线框架表面的腐蚀液；用稀硫酸腐蚀液或盐酸腐蚀液活化引线框架表面，并去除引线框架表面的氧化物；再经过五段自来水彻底清洗引线框架表面的腐蚀药液、酸洗药液；强风和热风烘干；在引线框架腐蚀减薄后的表面电镀厚度8μm～10μm的铜层，接着在电镀铜层表面电镀厚度7μm～15μm的纯锡层，最后用激光从引线框架背面进行切割，实现引脚分离；
或者，先在引线框架背面电镀厚度7μm～15μm的纯锡层，再用刀片切割引线框架背面，切割深度0.03mm～0.04mm，切割深度精度控制在±5μm，切割宽度0.2mm～0.25mm；然后用激光在刀片切割处烧蚀掉引脚之间相连的部分，实现引脚分离； 
或者，先在引线框架背面电镀厚度7μm～15μm的纯锡层，用水刀切割引线框架背面，实现引脚分离；
步骤8：将单元产品从框架上分离；
步骤9：测试/编带
本封装常规测试同传统QFN产品的O/S及开短路测试，同时还需进行电性能及热性能测试，确保产品的高良率和高可靠性；制得四边扁平无引脚封装件。
2.如权利要求1所述的生产方法，其特征在于，所述步骤2中采用AD889上芯机或AD829上芯机上芯。
3. 如权利要求1所述的生产方法，其特征在于，所述步骤3中采用ASM eagle60焊线机或W 3100 plus optima焊线机进行压焊。
4. 如权利要求1所述的生产方法，其特征在于，所述步骤3中采用“M”型弧、高低弧或反向方式打线，保证焊线间不短路。
5. 如权利要求1所述的生产方法，其特征在于，所述步骤7中以下喷淋方式喷涂腐蚀液，喷淋压力3bar～4bar。
6. 如权利要求1所述的生产方法，其特征在于，所述步骤7中激光切割时采用高精度的固体紫外激光切割机。
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