JP7246681B2 - トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置 - Google Patents

トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置 Download PDF

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JP7246681B2
JP7246681B2 JP2018180487A JP2018180487A JP7246681B2 JP 7246681 B2 JP7246681 B2 JP 7246681B2 JP 2018180487 A JP2018180487 A JP 2018180487A JP 2018180487 A JP2018180487 A JP 2018180487A JP 7246681 B2 JP7246681 B2 JP 7246681B2
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layer
oxide
region
oxide semiconductor
semiconductor layer
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JP2020053529A5 (https=
JP2020053529A (ja
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栄 田中
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Mikuni Electron Co Ltd
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Mikuni Electron Co Ltd
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Application filed by Mikuni Electron Co Ltd filed Critical Mikuni Electron Co Ltd
Priority to US16/577,044 priority patent/US11257961B2/en
Priority to CN201910900911.2A priority patent/CN110957372B/zh
Priority to EP19199145.4A priority patent/EP3629383B1/en
Publication of JP2020053529A publication Critical patent/JP2020053529A/ja
Publication of JP2020053529A5 publication Critical patent/JP2020053529A5/ja
Priority to US17/572,789 priority patent/US11929439B2/en
Priority to JP2023035885A priority patent/JP7510713B2/ja
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Publication of JP7246681B2 publication Critical patent/JP7246681B2/ja
Priority to US18/447,360 priority patent/US12113134B2/en
Priority to US18/678,553 priority patent/US12432981B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2018180487A 2018-09-26 2018-09-26 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置 Active JP7246681B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2018180487A JP7246681B2 (ja) 2018-09-26 2018-09-26 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
US16/577,044 US11257961B2 (en) 2018-09-26 2019-09-20 Transistor, method of manufacturing transistor, and display device using the same
CN201910900911.2A CN110957372B (zh) 2018-09-26 2019-09-23 晶体管、晶体管的制造方法、及使用该晶体管的显示装置
EP19199145.4A EP3629383B1 (en) 2018-09-26 2019-09-24 Transistor, method of manufacturing transistor, and display device using the same
US17/572,789 US11929439B2 (en) 2018-09-26 2022-01-11 Transistor, method of manufacturing transistor, and display device using the same
JP2023035885A JP7510713B2 (ja) 2018-09-26 2023-03-08 フォトマスク群およびパターン転写方法
US18/447,360 US12113134B2 (en) 2018-09-26 2023-08-10 Transistor, method of manufacturing transistor, and display device using the same
US18/678,553 US12432981B2 (en) 2018-09-26 2024-05-30 Transistor, method of manufacturing transistor, and display device using the same

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JP2018180487A JP7246681B2 (ja) 2018-09-26 2018-09-26 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置

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JP7444436B2 (ja) * 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
CN111430386B (zh) * 2020-04-01 2023-11-10 京东方科技集团股份有限公司 光电探测器、显示基板及光电探测器的制作方法
KR102770339B1 (ko) * 2020-06-05 2025-02-21 삼성디스플레이 주식회사 표시 장치
KR102823892B1 (ko) * 2020-07-02 2025-06-23 삼성디스플레이 주식회사 표시 장치
CN113688689B (zh) * 2020-08-27 2023-05-26 友达光电股份有限公司 生物特征感测装置
KR102952900B1 (ko) * 2020-12-28 2026-04-15 엘지디스플레이 주식회사 표시 장치
KR102910273B1 (ko) * 2021-10-12 2026-01-08 엘지디스플레이 주식회사 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치
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KR20240040845A (ko) * 2022-09-21 2024-03-29 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법

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