JP7185011B2 - 無線周波数トランジスタ増幅器及び絶縁構造を有する他のマルチセルトランジスタ - Google Patents
無線周波数トランジスタ増幅器及び絶縁構造を有する他のマルチセルトランジスタ Download PDFInfo
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- JP7185011B2 JP7185011B2 JP2021502815A JP2021502815A JP7185011B2 JP 7185011 B2 JP7185011 B2 JP 7185011B2 JP 2021502815 A JP2021502815 A JP 2021502815A JP 2021502815 A JP2021502815 A JP 2021502815A JP 7185011 B2 JP7185011 B2 JP 7185011B2
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- 238000002955 isolation Methods 0.000 title claims description 83
- 229910052751 metal Inorganic materials 0.000 claims description 167
- 239000002184 metal Substances 0.000 claims description 167
- 239000011810 insulating material Substances 0.000 claims description 130
- 239000004065 semiconductor Substances 0.000 claims description 126
- 230000008878 coupling Effects 0.000 claims description 40
- 238000010168 coupling process Methods 0.000 claims description 40
- 238000005859 coupling reaction Methods 0.000 claims description 40
- 239000010410 layer Substances 0.000 description 62
- 230000001965 increasing effect Effects 0.000 description 32
- 239000012774 insulation material Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 239000004020 conductor Substances 0.000 description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 239000003989 dielectric material Substances 0.000 description 12
- 150000002739 metals Chemical class 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000010931 gold Substances 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 238000002161 passivation Methods 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- 239000010948 rhodium Substances 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000000696 magnetic material Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- -1 for example Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052703 rhodium Inorganic materials 0.000 description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 206010011878 Deafness Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L29/42312—Gate electrodes for field effect devices
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Description
本出願は、内容全体が参照によって本明細書に組み込まれる、2018年7月19日に出願された米国特許出願第16/039,703号の一部継続出願であり、優先権を主張する、2018年12月4日に出願された米国特許出願第16/208,940号の優先権を主張する。
Claims (10)
- 半導体構造と、
電気的に並列に接続された複数のユニットセルトランジスタであって、各ユニットセルトランジスタは、前記半導体構造の第1の方向に延伸し、第2の方向に沿って互いに離間している複数のユニットセルトランジスタと、
前記複数のユニットセルトランジスタの第1のグループと前記複数のユニットセルトランジスタの第2のグループとの間に位置決めされた絶縁構造と
を備えるマルチセルトランジスタであって、
前記絶縁構造は、前記複数のユニットセルトランジスタの前記第1のグループと前記複数のユニットセルトランジスタの前記第2のグループとの間で垂直に延伸する絶縁要素を備え、前記複数のユニットセルトランジスタの前記第1のグループと前記複数のユニットセルトランジスタの前記第2のグループとの間の相互結合を低減させるように構成されている、マルチセルトランジスタ。 - 前記絶縁構造は、前記半導体構造の上にある、請求項1に記載のマルチセルトランジスタ。
- 前記複数のユニットセルトランジスタの前記第1のグループの2つの隣接するユニットセルトランジスタ間の前記第2の方向の第1の距離は、前記複数のユニットセルトランジスタの前記第1のグループの一端にある第1のユニットセルトランジスタと前記複数のユニットセルトランジスタの前記第2のグループにある第2のユニットセルトランジスタとの間の前記第2の方向の第2の距離より小さく、前記第2のユニットセルトランジスタは、前記第1のユニットセルトランジスタに隣接する、請求項1又は2に記載のマルチセルトランジスタ。
- 前記絶縁構造は、基準信号に電気的に接続されている、請求項1~3の何れか一項に記載のマルチセルトランジスタ。
- 前記絶縁構造は、金属パッドを更に備え、前記絶縁要素は、前記金属パッドに電気的に接続されている、請求項1~4の何れか一項に記載のマルチセルトランジスタ。
- 前記絶縁要素は、前記金属パッドから垂直に延伸する複数の壁セグメントを備える、請求項5に記載のマルチセルトランジスタ。
- 前記絶縁構造は、前記金属パッドと前記半導体構造との間に配置された複数のビアを含む、請求項5に記載のマルチセルトランジスタ。
- 前記絶縁要素を含む壁構造を更に備える、請求項1~7の何れか一項に記載のマルチセルトランジスタ。
- 前記絶縁要素は、導電性絶縁材料、磁気絶縁材料、又は損失性誘電体絶縁材料を含む、請求項8に記載のマルチセルトランジスタ。
- 前記複数のユニットセルトランジスタの第1のユニットセルトランジスタのゲートに電気的に接続された入力ボンドワイヤと、
前記第1のユニットセルトランジスタのドレインに電気的に接続された出力ボンドワイヤと、
前記入力ボンドワイヤと前記出力ボンドワイヤとの間の二次絶縁材料と
を更に備える、請求項1~9の何れか一項に記載のマルチセルトランジスタ。
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JP2001085513A (ja) | 1999-09-17 | 2001-03-30 | Toshiba Corp | 半導体装置 |
JP2006156902A (ja) | 2004-12-01 | 2006-06-15 | Mitsubishi Electric Corp | 高周波用半導体装置 |
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WO2014097524A1 (ja) | 2012-12-21 | 2014-06-26 | パナソニック株式会社 | 半導体装置 |
JP2016036014A (ja) | 2014-07-31 | 2016-03-17 | セイコーインスツル株式会社 | Esd素子を有する半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
EP3824496A2 (en) | 2021-05-26 |
US10615135B2 (en) | 2020-04-07 |
US20200027849A1 (en) | 2020-01-23 |
KR20210030963A (ko) | 2021-03-18 |
US11069635B2 (en) | 2021-07-20 |
US10600746B2 (en) | 2020-03-24 |
WO2020018761A3 (en) | 2020-02-27 |
CN112771664A (zh) | 2021-05-07 |
US20200219831A1 (en) | 2020-07-09 |
US20200027850A1 (en) | 2020-01-23 |
US11742304B2 (en) | 2023-08-29 |
KR102553110B1 (ko) | 2023-07-11 |
CN112771664B (zh) | 2024-03-01 |
US20210351141A1 (en) | 2021-11-11 |
WO2020018761A2 (en) | 2020-01-23 |
JP2021531654A (ja) | 2021-11-18 |
JP2023010937A (ja) | 2023-01-20 |
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