JP5884094B2 - 窒化物半導体装置 - Google Patents
窒化物半導体装置 Download PDFInfo
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- JP5884094B2 JP5884094B2 JP2013521428A JP2013521428A JP5884094B2 JP 5884094 B2 JP5884094 B2 JP 5884094B2 JP 2013521428 A JP2013521428 A JP 2013521428A JP 2013521428 A JP2013521428 A JP 2013521428A JP 5884094 B2 JP5884094 B2 JP 5884094B2
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- insulating film
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Description
本発明の一実施形態に係る窒化物半導体装置について、図1〜図4を参照しながら説明する。
以下、本発明の一実施形態の第1変形例に係る窒化物半導体装置について図5を参照しながら説明する。本変形例において、本発明の一実施形態と同一の構成については説明を省略し、異なる構成についてのみ説明する。
以下、本発明の一実施形態の第2変形例に係る窒化物半導体装置について図6を参照しながら説明する。本変形例において、本発明の一実施形態と同一の構成については説明を省略し、異なる構成についてのみ説明する。
2 バッファ層
3 窒化物半導体層
4 アンドープGaN層
5 アンドープAlGaN層
6 電極上絶縁膜
6a (電極上絶縁膜の)開口部
7a ソース電極
7b ドレイン電極
8 ゲート電極
9 p−GaN層
10 保護膜
11a ソース電極配線
11b ドレイン電極配線
12 層間絶縁膜
13 第1の絶縁膜
13a (第1の絶縁膜の)開口部
14 下層密着層
15 導電層
16 上層密着層
17a 第1の配線層
17b 第2の配線層
18 第2の絶縁膜
18a (第2の絶縁膜の)開口部
19 下層密着層
20 導電層
21 上層金属層
22a ソース電極パッド層(第1のパッド層)
22b ドレイン電極パッド層(第2のパッド層)
23 ゲート電極パッド層
24 裏面電極
31a 第1のソース電極パッド層(第1のパッド層)
31b 第1のドレイン電極パッド層(第2のパッド層)
32a 第2のソース電極パッド層(第1のパッド層)
32b 第2のドレイン電極パッド層(第2のパッド層)
33 ゲート電極パッド
41a 第1のS1電極パッド層(第1のパッド層)
41b 第1のS2電極パッド層(第2のパッド層)
42a 第2のS1電極パッド層(第1のパッド層)
42b 第2のS2電極パッド層(第2のパッド層)
43a G1電極パッド層
43b G2電極パッド層
Claims (10)
- 基板と、
前記基板の上に形成され、活性領域を有する窒化物半導体層と、
前記窒化物半導体層における前記活性領域の上に交互に離間して形成された、ソース電極及びソース電極配線を含む第1の電極配線層及びドレイン電極及びドレイン電極配線を含む第2の電極配線層と、
前記活性領域の上で前記ソース電極と前記ドレイン電極との間に形成された第1のゲート電極と、
前記第1の電極配線層及び第2の電極配線層の上に形成され、前記第1の電極配線層及び第2の電極配線層を露出する複数の第1の開口部を有する第1の絶縁膜と、
前記第1の絶縁膜の上に互いに離間して形成され、前記第1の開口部を介して前記第1の電極配線層と電気的に接続し且つ前記第1の電極配線層と交差して延びる第1の配線層、及び前記第1の開口部を介して前記第2の電極配線層と電気的に接続し且つ前記第2の電極配線層と交差して延びる第2の配線層と、
前記第1の配線層及び第2の配線層の上に形成され、前記第1の配線層及び第2の配線層を露出する複数の第2の開口部を有する第2の絶縁膜と、
前記第2の絶縁膜の上に互いに離間して形成され、前記第2の開口部を介して前記第1の配線層と電気的に接続し且つ前記活性領域の上に位置する第1のパッド層、及び前記第2の開口部を介して前記第2の配線層と電気的に接続し且つ前記活性領域の上に位置する第2のパッド層とを備えている窒化物半導体装置。 - 請求項1において、
前記第1の配線層及び第2の配線層は、それぞれが、複数の金属層である窒化物半導体装置。 - 請求項2において、
前記第1の配線層及び第2の配線層のそれぞれの最上層である金属層は、該最上層である金属層と接する下層の金属層よりも、前記第2の絶縁膜に対する密着性が高い窒化物半導体装置。 - 請求項2又は3において、
前記第1の配線層及び第2の配線層は、それぞれが、第1の絶縁膜と接するように形成された第1の金属層と、該第1の金属層の上に形成された第2の金属層と、該第2の金属層の上に形成された最上層である第3の金属層とを含み、
前記第1の金属層は、前記第2の金属層及び第3の金属層よりも第1の絶縁膜との密着性が高く、
前記第2の金属層は、前記第1の金属層よりも導電率が高い金属からなり、
前記第3の金属層は、前記第1の金属層及び第2の金属層よりも前記第2の絶縁膜との密着性が高い窒化物半導体装置。 - 請求項2〜4のいずれか1項において、
前記第1の配線層及び第2の配線層のそれぞれの最上層である金属層の光沢度は、1以上である窒化物半導体装置。 - 請求項1〜5のいずれか1項において、
前記第1のパッド層及び第2のパッド層は、それぞれが、複数の同電位のパッド層を含み、
前記複数の同電位のパッド層は、それぞれ外部装置に接続されている窒化物半導体装置。 - 請求項1〜6のいずれか1項において、
前記第1のパッド層及び第2のパッド層は、それぞれが、複数の金属層である窒化物半導体装置。 - 請求項1〜7のいずれか1項において、
前記ソース電極は、前記窒化物半導体層の上に該窒化物半導体層と直接に接続するように形成され、
前記ドレイン電極は、前記窒化物半導体層の上に該窒化物半導体層と直接に接続するように形成され、
前記窒化物半導体層の上には、前記ソース電極及び前記ドレイン電極を露出する開口部を有する電極上絶縁膜が形成され、
前記ソース電極配線は、前記電極上絶縁膜の上に形成され、前記電極上絶縁膜の開口部を介して前記ソース電極と電気的に接続され、前記ドレイン電極配線は、前記電極上絶縁膜の上に形成され、前記電極上絶縁膜の開口部を介して前記ドレイン電極と電気的に接続されている窒化物半導体装置。 - 請求項1〜8のいずれか1項において、
前記活性領域の上で、前記ドレイン電極配線の下に位置する第2のゲート電極をさらに備えている窒化物半導体装置。 - 基板と、
前記基板の上に形成され、活性領域を有する窒化物半導体層と、
前記窒化物半導体層における前記活性領域の上に交互に離間して形成された、アノード電極及びアノード電極配線を含む第1の電極配線層及びカソード電極及びカソード電極配線を含む第2の電極配線層と、
前記第1の電極配線層及び第2の電極配線層の上に形成され、前記第1の電極配線層及び第2の電極配線層を露出する複数の第1の開口部を有する第1の絶縁膜と、
前記第1の絶縁膜の上に互いに離間して形成され、前記第1の開口部を介して前記第1の電極配線層と電気的に接続し且つ前記第1の電極配線層と交差して延びる第1の配線層、及び前記第1の開口部を介して前記第2の電極配線層と電気的に接続し且つ前記第2の電極配線層と交差して延びる第2の配線層と、
前記第1の配線層及び第2の配線層の上に形成され、前記第1の配線層及び第2の配線層を露出する複数の第2の開口部を有する第2の絶縁膜と、
前記第2の絶縁膜の上に互いに離間して形成され、前記第2の開口部を介して前記第1の配線層と電気的に接続し且つ前記活性領域の上に位置する第1のパッド層、及び前記第2の開口部を介して前記第2の配線層と電気的に接続し且つ前記活性領域の上に位置する第2のパッド層とを備えている窒化物半導体装置。
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