JP7012454B2 - 静電吸着チャックの製造方法並びに半導体装置の製造方法 - Google Patents

静電吸着チャックの製造方法並びに半導体装置の製造方法 Download PDF

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Publication number
JP7012454B2
JP7012454B2 JP2017088042A JP2017088042A JP7012454B2 JP 7012454 B2 JP7012454 B2 JP 7012454B2 JP 2017088042 A JP2017088042 A JP 2017088042A JP 2017088042 A JP2017088042 A JP 2017088042A JP 7012454 B2 JP7012454 B2 JP 7012454B2
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Japan
Prior art keywords
semiconductor wafer
electrostatic
grinding
manufacturing
electrostatic adsorption
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Application number
JP2017088042A
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English (en)
Japanese (ja)
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JP2018186217A (ja
JP2018186217A5 (https=
Inventor
栄一 山本
欣浩 寺久保
貴彦 三井
利洋 伊東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Okamoto Machine Tool Works Ltd
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Okamoto Machine Tool Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okamoto Machine Tool Works Ltd filed Critical Okamoto Machine Tool Works Ltd
Priority to JP2017088042A priority Critical patent/JP7012454B2/ja
Priority to US15/960,790 priority patent/US10964576B2/en
Priority to KR1020180047846A priority patent/KR102541126B1/ko
Priority to CN201810385554.6A priority patent/CN108807257B/zh
Priority to TW107114251A priority patent/TWI788347B/zh
Publication of JP2018186217A publication Critical patent/JP2018186217A/ja
Publication of JP2018186217A5 publication Critical patent/JP2018186217A5/ja
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Publication of JP7012454B2 publication Critical patent/JP7012454B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Jigs For Machine Tools (AREA)
  • Drying Of Semiconductors (AREA)
JP2017088042A 2017-04-27 2017-04-27 静電吸着チャックの製造方法並びに半導体装置の製造方法 Active JP7012454B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017088042A JP7012454B2 (ja) 2017-04-27 2017-04-27 静電吸着チャックの製造方法並びに半導体装置の製造方法
US15/960,790 US10964576B2 (en) 2017-04-27 2018-04-24 Electrostatic attachment chuck, method for manufacturing the same, and semiconductor device manufacturing method
KR1020180047846A KR102541126B1 (ko) 2017-04-27 2018-04-25 정전 흡착 척, 그 제조 방법 및 반도체 장치의 제조 방법
CN201810385554.6A CN108807257B (zh) 2017-04-27 2018-04-26 静电吸附夹盘及其制造方法、以及半导体装置的制造方法
TW107114251A TWI788347B (zh) 2017-04-27 2018-04-26 靜電吸附夾盤的製造方法、以及半導體裝置的製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017088042A JP7012454B2 (ja) 2017-04-27 2017-04-27 静電吸着チャックの製造方法並びに半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2018186217A JP2018186217A (ja) 2018-11-22
JP2018186217A5 JP2018186217A5 (https=) 2020-05-28
JP7012454B2 true JP7012454B2 (ja) 2022-01-28

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JP2017088042A Active JP7012454B2 (ja) 2017-04-27 2017-04-27 静電吸着チャックの製造方法並びに半導体装置の製造方法

Country Status (5)

Country Link
US (1) US10964576B2 (https=)
JP (1) JP7012454B2 (https=)
KR (1) KR102541126B1 (https=)
CN (1) CN108807257B (https=)
TW (1) TWI788347B (https=)

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WO2018183309A1 (en) * 2017-03-28 2018-10-04 Sri International Production of very small or thin dies
JP7115850B2 (ja) * 2017-12-28 2022-08-09 株式会社ディスコ 被加工物の加工方法および加工装置
KR102609475B1 (ko) * 2018-10-23 2023-12-06 주식회사 다이셀 반도체 장치 제조 방법
JP7224138B2 (ja) * 2018-10-23 2023-02-17 株式会社ダイセル 半導体装置製造方法
JP7201386B2 (ja) 2018-10-23 2023-01-10 株式会社ダイセル 半導体装置製造方法
JP7270373B2 (ja) * 2018-12-20 2023-05-10 株式会社岡本工作機械製作所 樹脂を含む複合基板の研削方法及び研削装置
US20220170179A1 (en) * 2019-06-13 2022-06-02 Sumitomo Electric Industries, Ltd. Silicon carbide substrate and method of manufacturing silicon carbide substrate
JP7292163B2 (ja) * 2019-09-19 2023-06-16 株式会社ディスコ 被加工物の加工方法
CN111421487A (zh) * 2020-05-26 2020-07-17 苏州京浜光电科技股份有限公司 一种超薄树脂片镀膜专用夹具

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JP2017030071A (ja) 2015-07-30 2017-02-09 株式会社ディスコ 研削装置
WO2017057273A1 (ja) 2015-09-30 2017-04-06 日本碍子株式会社 静電チャック

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JP2015090945A (ja) 2013-11-07 2015-05-11 株式会社岡本工作機械製作所 再生半導体ウエハの製造方法
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Also Published As

Publication number Publication date
US20180315635A1 (en) 2018-11-01
KR20180120601A (ko) 2018-11-06
TW201839900A (zh) 2018-11-01
TWI788347B (zh) 2023-01-01
US10964576B2 (en) 2021-03-30
KR102541126B1 (ko) 2023-06-07
CN108807257B (zh) 2022-10-28
CN108807257A (zh) 2018-11-13
JP2018186217A (ja) 2018-11-22

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