KR102541126B1 - 정전 흡착 척, 그 제조 방법 및 반도체 장치의 제조 방법 - Google Patents

정전 흡착 척, 그 제조 방법 및 반도체 장치의 제조 방법 Download PDF

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KR102541126B1
KR102541126B1 KR1020180047846A KR20180047846A KR102541126B1 KR 102541126 B1 KR102541126 B1 KR 102541126B1 KR 1020180047846 A KR1020180047846 A KR 1020180047846A KR 20180047846 A KR20180047846 A KR 20180047846A KR 102541126 B1 KR102541126 B1 KR 102541126B1
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South Korea
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semiconductor wafer
grinding
electrostatic
chuck
synthetic resin
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Korean (ko)
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KR20180120601A (ko
Inventor
에이치 야마모토
요시히로 데라쿠보
타카히코 미츠이
토시히로 이토
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가부시키가이샤 오카모도 코사쿠 기카이 세이사쿠쇼
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    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • H01L21/02013—
    • H01L21/02016—
    • H01L21/304—
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Jigs For Machine Tools (AREA)
  • Drying Of Semiconductors (AREA)
KR1020180047846A 2017-04-27 2018-04-25 정전 흡착 척, 그 제조 방법 및 반도체 장치의 제조 방법 Active KR102541126B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2017-088042 2017-04-27
JP2017088042A JP7012454B2 (ja) 2017-04-27 2017-04-27 静電吸着チャックの製造方法並びに半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20180120601A KR20180120601A (ko) 2018-11-06
KR102541126B1 true KR102541126B1 (ko) 2023-06-07

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KR1020180047846A Active KR102541126B1 (ko) 2017-04-27 2018-04-25 정전 흡착 척, 그 제조 방법 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US10964576B2 (https=)
JP (1) JP7012454B2 (https=)
KR (1) KR102541126B1 (https=)
CN (1) CN108807257B (https=)
TW (1) TWI788347B (https=)

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WO2018183309A1 (en) * 2017-03-28 2018-10-04 Sri International Production of very small or thin dies
JP7115850B2 (ja) * 2017-12-28 2022-08-09 株式会社ディスコ 被加工物の加工方法および加工装置
KR102609475B1 (ko) * 2018-10-23 2023-12-06 주식회사 다이셀 반도체 장치 제조 방법
JP7224138B2 (ja) * 2018-10-23 2023-02-17 株式会社ダイセル 半導体装置製造方法
JP7201386B2 (ja) 2018-10-23 2023-01-10 株式会社ダイセル 半導体装置製造方法
JP7270373B2 (ja) * 2018-12-20 2023-05-10 株式会社岡本工作機械製作所 樹脂を含む複合基板の研削方法及び研削装置
US20220170179A1 (en) * 2019-06-13 2022-06-02 Sumitomo Electric Industries, Ltd. Silicon carbide substrate and method of manufacturing silicon carbide substrate
JP7292163B2 (ja) * 2019-09-19 2023-06-16 株式会社ディスコ 被加工物の加工方法
CN111421487A (zh) * 2020-05-26 2020-07-17 苏州京浜光电科技股份有限公司 一种超薄树脂片镀膜专用夹具

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JP2016183067A (ja) * 2015-03-26 2016-10-20 日本碍子株式会社 アルミナ焼結体の製法及びアルミナ焼結体
JP2017030071A (ja) * 2015-07-30 2017-02-09 株式会社ディスコ 研削装置
WO2017057273A1 (ja) * 2015-09-30 2017-04-06 日本碍子株式会社 静電チャック

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JP2016183067A (ja) * 2015-03-26 2016-10-20 日本碍子株式会社 アルミナ焼結体の製法及びアルミナ焼結体
JP2017030071A (ja) * 2015-07-30 2017-02-09 株式会社ディスコ 研削装置
WO2017057273A1 (ja) * 2015-09-30 2017-04-06 日本碍子株式会社 静電チャック

Also Published As

Publication number Publication date
US20180315635A1 (en) 2018-11-01
KR20180120601A (ko) 2018-11-06
TW201839900A (zh) 2018-11-01
TWI788347B (zh) 2023-01-01
US10964576B2 (en) 2021-03-30
JP7012454B2 (ja) 2022-01-28
CN108807257B (zh) 2022-10-28
CN108807257A (zh) 2018-11-13
JP2018186217A (ja) 2018-11-22

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