TWI788347B - 靜電吸附夾盤的製造方法、以及半導體裝置的製造方法 - Google Patents

靜電吸附夾盤的製造方法、以及半導體裝置的製造方法 Download PDF

Info

Publication number
TWI788347B
TWI788347B TW107114251A TW107114251A TWI788347B TW I788347 B TWI788347 B TW I788347B TW 107114251 A TW107114251 A TW 107114251A TW 107114251 A TW107114251 A TW 107114251A TW I788347 B TWI788347 B TW I788347B
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
grinding
electrostatic
manufacturing
chuck
Prior art date
Application number
TW107114251A
Other languages
English (en)
Chinese (zh)
Other versions
TW201839900A (zh
Inventor
山本栄一
寺久保欣浩
三井貴彦
伊東利洋
Original Assignee
日商岡本工作機械製作所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商岡本工作機械製作所股份有限公司 filed Critical 日商岡本工作機械製作所股份有限公司
Publication of TW201839900A publication Critical patent/TW201839900A/zh
Application granted granted Critical
Publication of TWI788347B publication Critical patent/TWI788347B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Jigs For Machine Tools (AREA)
  • Drying Of Semiconductors (AREA)
TW107114251A 2017-04-27 2018-04-26 靜電吸附夾盤的製造方法、以及半導體裝置的製造方法 TWI788347B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017088042A JP7012454B2 (ja) 2017-04-27 2017-04-27 静電吸着チャックの製造方法並びに半導体装置の製造方法
JP2017-088042 2017-04-27

Publications (2)

Publication Number Publication Date
TW201839900A TW201839900A (zh) 2018-11-01
TWI788347B true TWI788347B (zh) 2023-01-01

Family

ID=63916806

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107114251A TWI788347B (zh) 2017-04-27 2018-04-26 靜電吸附夾盤的製造方法、以及半導體裝置的製造方法

Country Status (5)

Country Link
US (1) US10964576B2 (https=)
JP (1) JP7012454B2 (https=)
KR (1) KR102541126B1 (https=)
CN (1) CN108807257B (https=)
TW (1) TWI788347B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018183309A1 (en) * 2017-03-28 2018-10-04 Sri International Production of very small or thin dies
JP7115850B2 (ja) * 2017-12-28 2022-08-09 株式会社ディスコ 被加工物の加工方法および加工装置
KR102609475B1 (ko) * 2018-10-23 2023-12-06 주식회사 다이셀 반도체 장치 제조 방법
JP7224138B2 (ja) * 2018-10-23 2023-02-17 株式会社ダイセル 半導体装置製造方法
JP7201386B2 (ja) 2018-10-23 2023-01-10 株式会社ダイセル 半導体装置製造方法
JP7270373B2 (ja) * 2018-12-20 2023-05-10 株式会社岡本工作機械製作所 樹脂を含む複合基板の研削方法及び研削装置
US20220170179A1 (en) * 2019-06-13 2022-06-02 Sumitomo Electric Industries, Ltd. Silicon carbide substrate and method of manufacturing silicon carbide substrate
JP7292163B2 (ja) * 2019-09-19 2023-06-16 株式会社ディスコ 被加工物の加工方法
CN111421487A (zh) * 2020-05-26 2020-07-17 苏州京浜光电科技股份有限公司 一种超薄树脂片镀膜专用夹具

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201347069A (zh) * 2011-09-30 2013-11-16 Ｔｏｔｏ股份有限公司 靜電吸盤
TW201401429A (zh) * 2012-05-29 2014-01-01 新光電氣工業股份有限公司 靜電夾頭及其製造方法
JP2015090945A (ja) * 2013-11-07 2015-05-11 株式会社岡本工作機械製作所 再生半導体ウエハの製造方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6131636U (ja) * 1984-07-31 1986-02-26 株式会社 徳田製作所 静電チヤツク
US5103367A (en) * 1987-05-06 1992-04-07 Unisearch Limited Electrostatic chuck using A.C. field excitation
JP2665242B2 (ja) * 1988-09-19 1997-10-22 東陶機器株式会社 静電チャック
US5209028A (en) * 1992-04-15 1993-05-11 Air Products And Chemicals, Inc. Apparatus to clean solid surfaces using a cryogenic aerosol
TW293231B (https=) * 1994-04-27 1996-12-11 Aneruba Kk
US5656093A (en) * 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
US5708250A (en) * 1996-03-29 1998-01-13 Lam Resarch Corporation Voltage controller for electrostatic chuck of vacuum plasma processors
JPH11111828A (ja) * 1997-09-30 1999-04-23 Shin Etsu Chem Co Ltd 静電吸着装置
JPH11168134A (ja) * 1997-12-03 1999-06-22 Shin Etsu Chem Co Ltd 静電吸着装置およびその製造方法
JPH11176920A (ja) * 1997-12-12 1999-07-02 Shin Etsu Chem Co Ltd 静電吸着装置
GB9726981D0 (en) * 1997-12-22 1998-02-18 Rolls Royce Plc Method and apparatus for grinding
JPH11186372A (ja) * 1997-12-22 1999-07-09 Nippon Cement Co Ltd 静電チャック
EP1194954B1 (en) * 1999-07-08 2011-05-18 Lam Research Corporation Electrostatic chuck and its manufacturing method
JP2003273194A (ja) * 2002-03-19 2003-09-26 Toto Ltd 静電チャック
JP2003282671A (ja) * 2002-03-27 2003-10-03 Tsukuba Seiko Co Ltd 静電保持装置及びそれを用いた搬送装置
US7258602B2 (en) * 2003-10-22 2007-08-21 Iv Technologies Co., Ltd. Polishing pad having grooved window therein and method of forming the same
US20050193951A1 (en) * 2004-03-08 2005-09-08 Muneo Furuse Plasma processing apparatus
JP4349952B2 (ja) * 2004-03-24 2009-10-21 京セラ株式会社 ウェハ支持部材とその製造方法
JP2007005434A (ja) * 2005-06-22 2007-01-11 Tomoegawa Paper Co Ltd 静電チャック装置用電極シートおよび静電チャック装置
JP4681366B2 (ja) * 2005-06-24 2011-05-11 新科實業有限公司 磁気ヘッドスライダの製造装置及び方法
JP5289307B2 (ja) * 2006-06-02 2013-09-11 スルザー メタプラス ゲーエムベーハー 基板ホルダーによる金属汚染を防止する方法
JP2008140823A (ja) * 2006-11-30 2008-06-19 Tomoegawa Paper Co Ltd 静電チャック装置
JP5094863B2 (ja) * 2007-07-23 2012-12-12 株式会社クリエイティブ テクノロジー 基板吸着装置及びその製造方法
JP2009094326A (ja) * 2007-10-10 2009-04-30 Disco Abrasive Syst Ltd ウェーハの研削方法
US8690997B2 (en) * 2008-09-17 2014-04-08 Creative Technology Corporation Two-sided attraction structure, exhibiting or indicating apparatus using same, dust collecting apparatus, and plant growing apparatus
JP5911144B2 (ja) * 2010-07-02 2016-04-27 国立研究開発法人産業技術総合研究所 微小機械システム
JP5609663B2 (ja) * 2011-01-18 2014-10-22 旭硝子株式会社 ガラス基板保持手段、およびそれを用いたｅｕｖマスクブランクスの製造方法
GB201117243D0 (en) * 2011-10-06 2011-11-16 Rolls Royce Plc Method and apparatus for grinding
JP2013084770A (ja) * 2011-10-11 2013-05-09 Disco Abrasive Syst Ltd ウェーハの研削方法
JP2014138164A (ja) * 2013-01-18 2014-07-28 Sumitomo Osaka Cement Co Ltd 静電チャック装置
JP6433204B2 (ja) * 2014-09-01 2018-12-05 株式会社ディスコ 静電支持プレート及び静電支持プレートの製造方法
JP6373212B2 (ja) * 2015-03-26 2018-08-15 日本碍子株式会社 アルミナ焼結体の製法及びアルミナ焼結体
JP6489973B2 (ja) * 2015-07-30 2019-03-27 株式会社ディスコ 研削装置
JP2017056522A (ja) * 2015-09-17 2017-03-23 株式会社ディスコ 研削ホイール及び研削方法
JP6674474B2 (ja) * 2015-09-30 2020-04-01 日本碍子株式会社 静電チャック
JP2018133505A (ja) * 2017-02-17 2018-08-23 株式会社ディスコ プラズマエッチング方法
US20180281151A1 (en) * 2017-03-30 2018-10-04 Applied Materials, Inc. Adhesive-less carriers for chemical mechanical polishing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201347069A (zh) * 2011-09-30 2013-11-16 Ｔｏｔｏ股份有限公司 靜電吸盤
TW201401429A (zh) * 2012-05-29 2014-01-01 新光電氣工業股份有限公司 靜電夾頭及其製造方法
JP2015090945A (ja) * 2013-11-07 2015-05-11 株式会社岡本工作機械製作所 再生半導体ウエハの製造方法

Also Published As

Publication number Publication date
US20180315635A1 (en) 2018-11-01
KR20180120601A (ko) 2018-11-06
TW201839900A (zh) 2018-11-01
US10964576B2 (en) 2021-03-30
JP7012454B2 (ja) 2022-01-28
KR102541126B1 (ko) 2023-06-07
CN108807257B (zh) 2022-10-28
CN108807257A (zh) 2018-11-13
JP2018186217A (ja) 2018-11-22

Similar Documents

Publication Publication Date Title
TWI788347B (zh) 靜電吸附夾盤的製造方法、以及半導體裝置的製造方法
TWI867594B (zh) 用於簡化的輔具晶圓的dbi至矽接合
KR102466056B1 (ko) 반도체 장치의 제조 방법 및 반도체 제조 장치
JP3911174B2 (ja) 半導体素子の製造方法および半導体素子
US20130023107A1 (en) Method of processing device wafer
JP2013008915A (ja) 基板加工方法及び基板加工装置
TWI655744B (zh) 積層元件的製造方法
CN101897001A (zh) 在晶片键合期间处理缺陷的工艺
TWI798236B (zh) 高熱傳導性之元件基板及其製造方法
KR100882380B1 (ko) 도너웨이퍼 양면으로부터의 반도체 재료 박막 제조방법 및 이에 의한 반도체-온-절연체 구조체
TW201824729A (zh) 靜電夾盤及靜電夾盤的製造方法
US11373907B2 (en) Method of manufacturing device chip
CN108885981B (zh) 晶圆的制造方法及晶圆
JP2004087690A (ja) 機械研磨を行う方法
JP2010205861A (ja) 積層ウエーハの面取り装置およびそれを用いて積層ウエーハのベベル部、エッジ部を面取り加工する方法
CN108262684B (zh) 一种化学机械研磨方法
CN118782530B (zh) 真空载盘及其制作方法和半导体加工工艺
JP6742772B2 (ja) 面取り装置及び面取り方法
JP2007158190A (ja) 吸着装置、研磨装置、半導体デバイス製造方法およびこの方法により製造される半導体デバイス
US20220336409A1 (en) Laminated device chip manufacturing method
CN100547741C (zh) 半导体装置、布线衬底的形成方法和衬底处理装置
JP2021190642A (ja) 電極形成方法
CN119836675A (zh) 晶片转移结构的制造方法
TW202326844A (zh) 晶圓的加工方法
JP2026047705A (ja) 製造方法