JP6899648B2 - 半導体ウェーハ、半導体構造体、及びそれを製造する方法 - Google Patents

半導体ウェーハ、半導体構造体、及びそれを製造する方法 Download PDF

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JP6899648B2
JP6899648B2 JP2016229899A JP2016229899A JP6899648B2 JP 6899648 B2 JP6899648 B2 JP 6899648B2 JP 2016229899 A JP2016229899 A JP 2016229899A JP 2016229899 A JP2016229899 A JP 2016229899A JP 6899648 B2 JP6899648 B2 JP 6899648B2
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semiconductor wafer
wafer
height
semiconductor
inclined surface
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JP2017123458A5 (enExample
JP2017123458A (ja
Inventor
鍾 洙 金
鍾 洙 金
三 宗 崔
三 宗 崔
秀 蓮 金
秀 蓮 金
泰 亨 具
泰 亨 具
▲ゲン▼ 姫 朱
▲ゲン▼ 姫 朱
▲清▼ 俊 金
▲清▼ 俊 金
智 原 兪
智 原 兪
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H10W42/121—
    • H10P14/24—
    • H10P74/203—
    • H10P90/123—
    • H10P90/128—
    • H10P90/18—
    • H10P95/90—
    • H10W46/00—
    • H10W46/201—
    • H10W46/301—

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2016229899A 2016-01-08 2016-11-28 半導体ウェーハ、半導体構造体、及びそれを製造する方法 Active JP6899648B2 (ja)

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KR10-2016-0002779 2016-01-08
KR1020160002779A KR102468793B1 (ko) 2016-01-08 2016-01-08 반도체 웨이퍼, 반도체 구조체 및 이를 제조하는 방법

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JP2017123458A JP2017123458A (ja) 2017-07-13
JP2017123458A5 JP2017123458A5 (enExample) 2019-12-19
JP6899648B2 true JP6899648B2 (ja) 2021-07-07

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US (1) US9806036B2 (enExample)
JP (1) JP6899648B2 (enExample)
KR (1) KR102468793B1 (enExample)
CN (1) CN106992113B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6493253B2 (ja) * 2016-03-04 2019-04-03 株式会社Sumco シリコンウェーハの製造方法およびシリコンウェーハ
KR101992778B1 (ko) * 2017-11-01 2019-06-25 에스케이실트론 주식회사 웨이퍼 및 그 형상 분석 방법
KR102483923B1 (ko) * 2017-12-27 2023-01-02 삼성전자 주식회사 베벨부를 갖는 반도체 웨이퍼
US10978331B2 (en) 2018-03-30 2021-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for orientator based wafer defect sensing
CN109926911A (zh) * 2019-03-04 2019-06-25 天通日进精密技术有限公司 晶圆凹口抛光装置及晶圆凹口抛光方法
CN110842754A (zh) * 2019-11-14 2020-02-28 西安奕斯伟硅片技术有限公司 一种边缘抛光系统、边缘抛光方法及晶圆

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* Cited by examiner, † Cited by third party
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JP2742710B2 (ja) * 1989-06-26 1998-04-22 三菱電機株式会社 半導体ウェハ
JP2798112B2 (ja) 1994-03-25 1998-09-17 信越半導体株式会社 ウェーハノッチ寸法測定装置及び方法
JP3935977B2 (ja) * 1995-05-16 2007-06-27 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 ノッチ付き半導体ウェーハ
JP3580600B2 (ja) * 1995-06-09 2004-10-27 株式会社ルネサステクノロジ 半導体装置の製造方法およびそれに使用される半導体ウエハ並びにその製造方法
JP3213563B2 (ja) 1997-03-11 2001-10-02 株式会社スーパーシリコン研究所 ノッチレスウェーハの製造方法
JPH11297799A (ja) 1998-04-10 1999-10-29 Hitachi Cable Ltd ノッチ付き半導体基板
JP2952826B1 (ja) * 1998-06-05 1999-09-27 株式会社エンヤシステム ウエ−ハのノッチエッチング方法及び装置
JP2000254845A (ja) 1999-03-10 2000-09-19 Nippei Toyama Corp ウエーハのノッチ溝の面取り方法及びウエーハ
JP2001250799A (ja) 2000-03-03 2001-09-14 Mitsubishi Electric Corp 半導体ウェハおよび半導体装置
JP2001291649A (ja) * 2000-04-06 2001-10-19 Toshiba Corp 基板と半導体装置の製造方法
JP2002001636A (ja) * 2000-06-23 2002-01-08 Memc Japan Ltd ウエハの面取り加工方法
JP2002093692A (ja) * 2000-09-20 2002-03-29 Komatsu Ltd 半導体ウェハのノッチ面取部平面部分の光学的処理装置とその処理方法。
JP2003045788A (ja) * 2001-08-02 2003-02-14 Tokyo Electron Ltd 基板処理方法及び基板処理装置
JP4034682B2 (ja) * 2002-10-21 2008-01-16 株式会社東芝 半導体ウェーハ及び半導体ウェーハ製造方法
JP2004207606A (ja) * 2002-12-26 2004-07-22 Disco Abrasive Syst Ltd ウェーハサポートプレート
US7102206B2 (en) 2003-01-20 2006-09-05 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate, method for fabricating the same, and method for fabricating semiconductor device
JP2005101290A (ja) * 2003-09-25 2005-04-14 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
JP2005109155A (ja) * 2003-09-30 2005-04-21 Disco Abrasive Syst Ltd 半導体ウェーハの加工方法
JP2005254343A (ja) 2004-03-09 2005-09-22 Noritake Super Abrasive:Kk ノッチホイール
JP2006108532A (ja) * 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
KR20060074742A (ko) 2004-12-28 2006-07-03 주식회사 하이닉스반도체 반도체용 웨이퍼 및 웨이퍼 제조 방법
KR20080035422A (ko) * 2005-07-21 2008-04-23 스미토모덴키고교가부시키가이샤 질화갈륨 웨이퍼
JP4780142B2 (ja) 2008-05-22 2011-09-28 信越半導体株式会社 ウェーハの製造方法
JP2011086732A (ja) * 2009-10-14 2011-04-28 Renesas Electronics Corp ノッチ研磨装置、ベベル研磨装置及び半導体装置の製造方法
JP5548173B2 (ja) * 2011-08-31 2014-07-16 株式会社東芝 半導体基板及びその製造方法
US20140007901A1 (en) 2012-07-06 2014-01-09 Jack Chen Methods and apparatus for bevel edge cleaning in a plasma processing system
JP6048654B2 (ja) * 2012-12-04 2016-12-21 不二越機械工業株式会社 半導体ウェーハの製造方法
JP6214192B2 (ja) * 2013-04-11 2017-10-18 株式会社ディスコ 加工方法
JP5979081B2 (ja) 2013-05-28 2016-08-24 信越半導体株式会社 単結晶ウェーハの製造方法

Also Published As

Publication number Publication date
KR102468793B1 (ko) 2022-11-18
KR20170083384A (ko) 2017-07-18
US20170200683A1 (en) 2017-07-13
CN106992113A (zh) 2017-07-28
US9806036B2 (en) 2017-10-31
JP2017123458A (ja) 2017-07-13
CN106992113B (zh) 2020-03-03

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