CN106992113B - 半导体晶片、半导体结构及制造半导体晶片的方法 - Google Patents

半导体晶片、半导体结构及制造半导体晶片的方法 Download PDF

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CN106992113B
CN106992113B CN201710009776.3A CN201710009776A CN106992113B CN 106992113 B CN106992113 B CN 106992113B CN 201710009776 A CN201710009776 A CN 201710009776A CN 106992113 B CN106992113 B CN 106992113B
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semiconductor wafer
point
slope
height
notch
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CN106992113A (zh
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金钟洙
崔三宗
金秀莲
具泰亨
朱炫姬
金清俊
俞智原
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Samsung Electronics Co Ltd
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    • H10W42/121—
    • H10P14/24—
    • H10P74/203—
    • H10P90/123—
    • H10P90/128—
    • H10P90/18—
    • H10P95/90—
    • H10W46/00—
    • H10W46/201—
    • H10W46/301—

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201710009776.3A 2016-01-08 2017-01-06 半导体晶片、半导体结构及制造半导体晶片的方法 Active CN106992113B (zh)

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KR10-2016-0002779 2016-01-08
KR1020160002779A KR102468793B1 (ko) 2016-01-08 2016-01-08 반도체 웨이퍼, 반도체 구조체 및 이를 제조하는 방법

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CN106992113A CN106992113A (zh) 2017-07-28
CN106992113B true CN106992113B (zh) 2020-03-03

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US (1) US9806036B2 (enExample)
JP (1) JP6899648B2 (enExample)
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JP6493253B2 (ja) * 2016-03-04 2019-04-03 株式会社Sumco シリコンウェーハの製造方法およびシリコンウェーハ
KR101992778B1 (ko) * 2017-11-01 2019-06-25 에스케이실트론 주식회사 웨이퍼 및 그 형상 분석 방법
KR102483923B1 (ko) * 2017-12-27 2023-01-02 삼성전자 주식회사 베벨부를 갖는 반도체 웨이퍼
US10978331B2 (en) 2018-03-30 2021-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for orientator based wafer defect sensing
CN109926911A (zh) * 2019-03-04 2019-06-25 天通日进精密技术有限公司 晶圆凹口抛光装置及晶圆凹口抛光方法
CN110842754A (zh) * 2019-11-14 2020-02-28 西安奕斯伟硅片技术有限公司 一种边缘抛光系统、边缘抛光方法及晶圆

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Publication number Priority date Publication date Assignee Title
JP2003045788A (ja) * 2001-08-02 2003-02-14 Tokyo Electron Ltd 基板処理方法及び基板処理装置
CN103854991A (zh) * 2012-12-04 2014-06-11 不二越机械工业株式会社 制造半导体晶圆的方法

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KR102468793B1 (ko) 2022-11-18
KR20170083384A (ko) 2017-07-18
JP6899648B2 (ja) 2021-07-07
US20170200683A1 (en) 2017-07-13
CN106992113A (zh) 2017-07-28
US9806036B2 (en) 2017-10-31
JP2017123458A (ja) 2017-07-13

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