JP2019202900A - SiC基板の製造方法 - Google Patents
SiC基板の製造方法 Download PDFInfo
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- JP2019202900A JP2019202900A JP2018097208A JP2018097208A JP2019202900A JP 2019202900 A JP2019202900 A JP 2019202900A JP 2018097208 A JP2018097208 A JP 2018097208A JP 2018097208 A JP2018097208 A JP 2018097208A JP 2019202900 A JP2019202900 A JP 2019202900A
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- 239000000758 substrate Substances 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 230000007547 defect Effects 0.000 claims abstract description 37
- 230000002950 deficient Effects 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 29
- 238000001514 detection method Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 63
- 229910010271 silicon carbide Inorganic materials 0.000 description 63
- 238000010586 diagram Methods 0.000 description 3
- 230000007717 exclusion Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 244000000626 Daucus carota Species 0.000 description 2
- 235000002767 Daucus carota Nutrition 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
図1は、実施の形態1に係るSiC基板の製造方法を示すフローチャートである。図2から図4は、実施の形態1に係るSiC基板の製造方法を示す断面図である。まず、昇華法などで製造されたSiC単結晶を基板状態に加工してSiC基板1を形成する。次に、図2に示すようにSiC基板1にCMP処理を行う(ステップS1)。次に、洗浄処理を行う(ステップS2)。次に、図3に示すように、SiC基板1の表面の画像を検出器2により撮影してスクラッチを検出する(ステップS3)。
図9は、実施の形態2に係るSiC基板の製造方法を示すフローチャートである。本実施の形態では、有害なスクラッチの長さが上限規格を超えている場合はSiC基板1に再CMP処理を行う。SiC基板1が良品と判定されるまでCMP処理とスクラッチの検出等を繰り返す。ただし、SiCデバイス製造ラインでは流動可能な基板厚が決まっているため、再CMP処理の前に基板厚を測定し、規格より薄い基板は不良と判定する(ステップS7)。
Claims (3)
- SiC基板にCMP処理を行う工程と、
前記CMP処理の後に前記SiC基板の表面の画像を撮影してスクラッチを検出する工程と、
前記画像においてコントラスト値が閾値以上のスクラッチがエピ欠陥の起点となり、前記SiC基板の直径をD、前記SiC基板上に形成するデバイスチップの長辺の長さをA、許容できるスクラッチ起因のデバイス不良率をFとし、前記閾値以上のコントラスト値を持つ前記スクラッチの長さLがπ(D/2)2/A×F/100以下の場合に前記SiC基板を良品と判定する工程とを備えることを特徴とするSiC基板の製造方法。 - 前記SiC基板が良品と判定されるまで前記CMP処理と前記スクラッチの検出を繰り返すことを特徴とする請求項1に記載のSiC基板の製造方法。
- 良品と判定された前記SiC基板の上にSiC膜をエピタキシャル成長させる工程を更に備えることを特徴とする請求項1又は2に記載のSiC基板の製造方法。
Priority Applications (4)
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JP2018097208A JP6874737B2 (ja) | 2018-05-21 | 2018-05-21 | SiC基板の製造方法 |
US16/208,772 US10559508B2 (en) | 2018-05-21 | 2018-12-04 | Method for manufacturing SiC substrate |
DE102019202027.5A DE102019202027B4 (de) | 2018-05-21 | 2019-02-15 | Verfahren zum Herstellen eines SiC-Substrats |
CN201910407416.8A CN110517946B (zh) | 2018-05-21 | 2019-05-16 | SiC衬底的制造方法 |
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JP2018097208A JP6874737B2 (ja) | 2018-05-21 | 2018-05-21 | SiC基板の製造方法 |
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JP2019202900A true JP2019202900A (ja) | 2019-11-28 |
JP6874737B2 JP6874737B2 (ja) | 2021-05-19 |
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US (1) | US10559508B2 (ja) |
JP (1) | JP6874737B2 (ja) |
CN (1) | CN110517946B (ja) |
DE (1) | DE102019202027B4 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020072156A (ja) * | 2018-10-30 | 2020-05-07 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP2020202289A (ja) * | 2019-06-10 | 2020-12-17 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法 |
WO2021166161A1 (ja) * | 2020-02-20 | 2021-08-26 | 株式会社日立ハイテク | 欠陥検査システム、欠陥検査方法及び教師データの作成方法 |
Families Citing this family (1)
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TWI790591B (zh) * | 2021-04-12 | 2023-01-21 | 環球晶圓股份有限公司 | 晶圓加工系統及其重工方法 |
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- 2018-12-04 US US16/208,772 patent/US10559508B2/en active Active
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- 2019-02-15 DE DE102019202027.5A patent/DE102019202027B4/de active Active
- 2019-05-16 CN CN201910407416.8A patent/CN110517946B/zh active Active
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JP2020072156A (ja) * | 2018-10-30 | 2020-05-07 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP7056515B2 (ja) | 2018-10-30 | 2022-04-19 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP2020202289A (ja) * | 2019-06-10 | 2020-12-17 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法 |
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DE102019202027B4 (de) | 2022-12-29 |
US10559508B2 (en) | 2020-02-11 |
CN110517946B (zh) | 2022-12-23 |
CN110517946A (zh) | 2019-11-29 |
US20190355629A1 (en) | 2019-11-21 |
DE102019202027A1 (de) | 2019-11-21 |
JP6874737B2 (ja) | 2021-05-19 |
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