JP5400228B1 - SiC単結晶基板 - Google Patents
SiC単結晶基板 Download PDFInfo
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- JP5400228B1 JP5400228B1 JP2012535267A JP2012535267A JP5400228B1 JP 5400228 B1 JP5400228 B1 JP 5400228B1 JP 2012535267 A JP2012535267 A JP 2012535267A JP 2012535267 A JP2012535267 A JP 2012535267A JP 5400228 B1 JP5400228 B1 JP 5400228B1
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- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 239000013078 crystal Substances 0.000 title claims abstract description 60
- 230000007547 defect Effects 0.000 claims abstract description 54
- 238000005498 polishing Methods 0.000 claims abstract description 49
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 28
- 239000002002 slurry Substances 0.000 claims description 22
- -1 manganate ions Chemical class 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 8
- LBSANEJBGMCTBH-UHFFFAOYSA-N manganate Chemical compound [O-][Mn]([O-])(=O)=O LBSANEJBGMCTBH-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 17
- 229910010271 silicon carbide Inorganic materials 0.000 description 53
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 50
- 230000000052 comparative effect Effects 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000008119 colloidal silica Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910001413 alkali metal ion Inorganic materials 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(iii) oxide Chemical compound O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000004438 BET method Methods 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WAEMQWOKJMHJLA-UHFFFAOYSA-N Manganese(2+) Chemical compound [Mn+2] WAEMQWOKJMHJLA-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910001437 manganese ion Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
研摩材スラリーの作製:電解MnO2(三井金属鉱業(株)製の微粒粉末(D50=0.30μm、比表面積48.7m2/g、結晶子径2.0nm、結晶構造γ型MnO2)20gと純水980gを混合し、これにKMnO4(和光純薬社製)9.8gを加えて撹拌し、研摩液(研摩材スラリー)を作製した。尚、結晶子径は、シェラー法による測定により得た数値である。また、比表面積はBET法による測定により得た数値である。
Claims (2)
- CMP処理された研摩面を有するSiC単結晶基板であって、
CMP処理は、酸化マンガン粒子とマンガン酸イオンとを含有した研摩材スラリーを用いるものであり、当該研摩材スラリー中のマンガン酸イオンと酸化マンガンとが、酸化マンガンに対するマンガン酸イオンがモル濃度の割合(マンガン酸イオンのモル濃度/酸化マンガンのモル濃度)で0.27以上とし、
当該CMP処理されたSiC単結晶基板の断面を、
L、hをそれぞれ自然数としたときに、00L反射及びh−h0反射について透過電子顕微鏡により観察をした際に、
研摩面から垂直方向に100nm以内に発生したもので、研摩面と平行な方向の幅が30nm以上であり、研摩面に対して垂直な方向の長さが50nm以上の大きさを有した格子欠陥が、
研摩面と平行な方向の10μm長さの間に、5個以下観察されることを特徴とするSiC単結晶基板。 - L=4またはh=1である請求項1に記載のSiC単結晶基板。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2012/061334 WO2013161049A1 (ja) | 2012-04-27 | 2012-04-27 | SiC単結晶基板 |
Publications (2)
Publication Number | Publication Date |
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JP5400228B1 true JP5400228B1 (ja) | 2014-01-29 |
JPWO2013161049A1 JPWO2013161049A1 (ja) | 2015-12-21 |
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JP2012535267A Active JP5400228B1 (ja) | 2012-04-27 | 2012-04-27 | SiC単結晶基板 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9391148B2 (ja) |
EP (1) | EP2843089A4 (ja) |
JP (1) | JP5400228B1 (ja) |
WO (2) | WO2013161049A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016092246A (ja) * | 2014-11-06 | 2016-05-23 | 株式会社ディスコ | 研磨液及びSiC基板の研磨方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6744295B2 (ja) * | 2015-04-01 | 2020-08-19 | 三井金属鉱業株式会社 | 研摩材および研摩スラリー |
WO2017138308A1 (ja) | 2016-02-09 | 2017-08-17 | 三井金属鉱業株式会社 | 研摩スラリー及び研摩材 |
JP6874737B2 (ja) | 2018-05-21 | 2021-05-19 | 三菱電機株式会社 | SiC基板の製造方法 |
TW202242985A (zh) * | 2021-04-15 | 2022-11-01 | 環球晶圓股份有限公司 | 半導體基板的製造方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH1060415A (ja) * | 1996-06-11 | 1998-03-03 | Fujitsu Ltd | Mn酸化物を砥粒とする研磨剤の製造方法および半導体装置の製造方法 |
JPH1072578A (ja) * | 1996-06-27 | 1998-03-17 | Fujitsu Ltd | 研磨剤、研磨方法、および半導体装置の製造方法 |
JP2001205555A (ja) * | 1999-11-16 | 2001-07-31 | Denso Corp | メカノケミカル研磨方法及びメカノケミカル研磨装置 |
JP2004146780A (ja) * | 2002-08-28 | 2004-05-20 | Kao Corp | 研磨液組成物 |
JP2007266619A (ja) * | 2002-01-25 | 2007-10-11 | Jsr Corp | 半導体基板の化学機械研磨方法および化学機械研磨用水系分散体 |
JP2009238891A (ja) * | 2008-03-26 | 2009-10-15 | Hitachi Metals Ltd | SiC単結晶基板の製造方法 |
JP2010003732A (ja) * | 2008-06-18 | 2010-01-07 | Adeka Corp | Cmp用研磨組成物 |
JP2011122102A (ja) * | 2009-12-11 | 2011-06-23 | Kyushu Univ | 炭化珪素の研磨液及びその研磨方法 |
JP2011218494A (ja) * | 2010-04-09 | 2011-11-04 | Mitsui Mining & Smelting Co Ltd | 研摩スラリー及びその研摩方法 |
WO2012023357A1 (ja) * | 2010-08-19 | 2012-02-23 | 三井金属鉱業株式会社 | 酸化マンガン粒子及びその製造方法 |
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TWI307712B (en) | 2002-08-28 | 2009-03-21 | Kao Corp | Polishing composition |
US20040134418A1 (en) | 2002-11-08 | 2004-07-15 | Taisuke Hirooka | SiC substrate and method of manufacturing the same |
JP4427472B2 (ja) | 2005-03-18 | 2010-03-10 | 新日本製鐵株式会社 | SiC単結晶基板の製造方法 |
JP4846445B2 (ja) | 2006-05-19 | 2011-12-28 | 新日本製鐵株式会社 | 炭化珪素単結晶ウェハ表面の仕上げ研磨方法 |
WO2010090024A1 (ja) * | 2009-02-04 | 2010-08-12 | 日立金属株式会社 | 炭化珪素単結晶基板およびその製造方法 |
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2012
- 2012-04-27 JP JP2012535267A patent/JP5400228B1/ja active Active
- 2012-04-27 WO PCT/JP2012/061334 patent/WO2013161049A1/ja active Application Filing
-
2013
- 2013-04-12 WO PCT/JP2013/061096 patent/WO2013161591A1/ja active Application Filing
- 2013-04-12 US US14/394,525 patent/US9391148B2/en active Active
- 2013-04-12 EP EP13780614.7A patent/EP2843089A4/en active Pending
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016092246A (ja) * | 2014-11-06 | 2016-05-23 | 株式会社ディスコ | 研磨液及びSiC基板の研磨方法 |
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US20150084065A1 (en) | 2015-03-26 |
EP2843089A1 (en) | 2015-03-04 |
EP2843089A4 (en) | 2015-10-14 |
WO2013161591A1 (ja) | 2013-10-31 |
WO2013161049A1 (ja) | 2013-10-31 |
US9391148B2 (en) | 2016-07-12 |
JPWO2013161049A1 (ja) | 2015-12-21 |
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