JP6878848B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6878848B2
JP6878848B2 JP2016224025A JP2016224025A JP6878848B2 JP 6878848 B2 JP6878848 B2 JP 6878848B2 JP 2016224025 A JP2016224025 A JP 2016224025A JP 2016224025 A JP2016224025 A JP 2016224025A JP 6878848 B2 JP6878848 B2 JP 6878848B2
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Japan
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region
semiconductor device
diode
semiconductor substrate
transistor
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JP2016224025A
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English (en)
Japanese (ja)
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JP2017147435A (ja
JP2017147435A5 (enExample
Inventor
内藤　達也
達也 内藤
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to CN201710058325.9A priority Critical patent/CN107086217B/zh
Priority to US15/421,371 priority patent/US10121866B2/en
Publication of JP2017147435A publication Critical patent/JP2017147435A/ja
Publication of JP2017147435A5 publication Critical patent/JP2017147435A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2016224025A 2016-02-16 2016-11-17 半導体装置 Active JP6878848B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201710058325.9A CN107086217B (zh) 2016-02-16 2017-01-23 半导体装置
US15/421,371 US10121866B2 (en) 2016-02-16 2017-01-31 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016027035 2016-02-16
JP2016027035 2016-02-16

Publications (3)

Publication Number Publication Date
JP2017147435A JP2017147435A (ja) 2017-08-24
JP2017147435A5 JP2017147435A5 (enExample) 2019-12-26
JP6878848B2 true JP6878848B2 (ja) 2021-06-02

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ID=59681505

Family Applications (1)

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JP2016224025A Active JP6878848B2 (ja) 2016-02-16 2016-11-17 半導体装置

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JP (1) JP6878848B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019078166A1 (ja) * 2017-10-18 2019-04-25 富士電機株式会社 半導体装置
JP7069646B2 (ja) * 2017-11-06 2022-05-18 富士電機株式会社 半導体装置
JP7073681B2 (ja) * 2017-11-07 2022-05-24 富士電機株式会社 半導体装置の製造方法および半導体装置
WO2019098271A1 (ja) * 2017-11-16 2019-05-23 富士電機株式会社 半導体装置
WO2019116696A1 (ja) 2017-12-14 2019-06-20 富士電機株式会社 半導体装置
JP6992476B2 (ja) * 2017-12-14 2022-01-13 富士電機株式会社 半導体装置
WO2019116748A1 (ja) * 2017-12-14 2019-06-20 富士電機株式会社 半導体装置およびその製造方法
JP6969662B2 (ja) * 2018-02-14 2021-11-24 富士電機株式会社 半導体装置
JP7073773B2 (ja) 2018-02-15 2022-05-24 富士電機株式会社 半導体装置
JP7091693B2 (ja) 2018-02-19 2022-06-28 富士電機株式会社 半導体装置
WO2019176327A1 (ja) 2018-03-15 2019-09-19 富士電機株式会社 半導体装置
CN110323273B (zh) * 2018-03-30 2025-02-25 富士电机株式会社 半导体装置、半导体封装、半导体模块及半导体电路装置
JP7106981B2 (ja) 2018-05-18 2022-07-27 富士電機株式会社 逆導通型半導体装置
JP7155641B2 (ja) * 2018-06-14 2022-10-19 富士電機株式会社 半導体装置
JP7293592B2 (ja) * 2018-09-14 2023-06-20 富士電機株式会社 半導体素子及び半導体装置
JP7268330B2 (ja) * 2018-11-05 2023-05-08 富士電機株式会社 半導体装置および製造方法
JP7163815B2 (ja) * 2019-02-19 2022-11-01 株式会社デンソー 半導体装置と定電流源と電圧計を有する回路
US12068375B2 (en) 2019-10-24 2024-08-20 Panasonic Holdings Corporation Nitride semiconductor device
DE112020002890T5 (de) * 2020-01-17 2022-02-24 Fuji Electric Co., Ltd. Halbleitervorrichtung
JP7392557B2 (ja) * 2020-04-07 2023-12-06 株式会社デンソー 半導体装置
WO2023189754A1 (ja) * 2022-03-31 2023-10-05 ローム株式会社 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4403366B2 (ja) * 2003-06-04 2010-01-27 富士電機デバイステクノロジー株式会社 半導体装置およびその製造方法
JP5028748B2 (ja) * 2005-04-15 2012-09-19 富士電機株式会社 パワー半導体デバイスの温度計測装置
JP2008235405A (ja) * 2007-03-19 2008-10-02 Denso Corp 半導体装置
JP4605251B2 (ja) * 2007-06-14 2011-01-05 株式会社デンソー 半導体装置
JP4700125B2 (ja) * 2009-07-30 2011-06-15 住友電気工業株式会社 半導体装置およびその製造方法
EP2477226B1 (en) * 2009-09-07 2016-06-22 Toyota Jidosha Kabushiki Kaisha Semiconductor device including semiconductor substrate having diode region and igbt region
JP5487956B2 (ja) * 2009-12-25 2014-05-14 トヨタ自動車株式会社 半導体装置
DE112010005443B4 (de) * 2010-04-02 2019-03-14 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung mit einem Halbleitersubstrat mit einem Diodenbereich und einem IGBT-Bereich sowie Verfahren zu dessen Herstellung
JP5190485B2 (ja) * 2010-04-02 2013-04-24 株式会社豊田中央研究所 半導体装置
JP5582102B2 (ja) * 2010-07-01 2014-09-03 株式会社デンソー 半導体装置
JP5636808B2 (ja) * 2010-08-17 2014-12-10 株式会社デンソー 半導体装置
JP6011696B2 (ja) * 2011-07-27 2016-10-19 トヨタ自動車株式会社 ダイオード、半導体装置およびｍｏｓｆｅｔ
JP5768028B2 (ja) * 2012-09-24 2015-08-26 株式会社東芝 半導体装置

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