JP6843834B2 - 有機エレクトロルミネッセンス素子のためのフェノキサジン誘導体 - Google Patents
有機エレクトロルミネッセンス素子のためのフェノキサジン誘導体 Download PDFInfo
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- JP6843834B2 JP6843834B2 JP2018507562A JP2018507562A JP6843834B2 JP 6843834 B2 JP6843834 B2 JP 6843834B2 JP 2018507562 A JP2018507562 A JP 2018507562A JP 2018507562 A JP2018507562 A JP 2018507562A JP 6843834 B2 JP6843834 B2 JP 6843834B2
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- NRNFFDZCBYOZJY-UHFFFAOYSA-N p-quinodimethane Chemical class C=C1C=CC(=C)C=C1 NRNFFDZCBYOZJY-UHFFFAOYSA-N 0.000 description 1
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- 150000003222 pyridines Chemical class 0.000 description 1
- GDISDVBCNPLSDU-UHFFFAOYSA-N pyrido[2,3-g]quinoline Chemical compound C1=CC=NC2=CC3=CC=CN=C3C=C21 GDISDVBCNPLSDU-UHFFFAOYSA-N 0.000 description 1
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
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- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
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- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
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- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- MFRIHAYPQRLWNB-UHFFFAOYSA-N sodium tert-butoxide Chemical compound [Na+].CC(C)(C)[O-] MFRIHAYPQRLWNB-UHFFFAOYSA-N 0.000 description 1
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- 238000010023 transfer printing Methods 0.000 description 1
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- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000002061 vacuum sublimation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 150000003754 zirconium Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D265/00—Heterocyclic compounds containing six-membered rings having one nitrogen atom and one oxygen atom as the only ring hetero atoms
- C07D265/28—1,4-Oxazines; Hydrogenated 1,4-oxazines
- C07D265/34—1,4-Oxazines; Hydrogenated 1,4-oxazines condensed with carbocyclic rings
- C07D265/38—[b, e]-condensed with two six-membered rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D265/00—Heterocyclic compounds containing six-membered rings having one nitrogen atom and one oxygen atom as the only ring hetero atoms
- C07D265/28—1,4-Oxazines; Hydrogenated 1,4-oxazines
- C07D265/34—1,4-Oxazines; Hydrogenated 1,4-oxazines condensed with carbocyclic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D413/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms
- C07D413/02—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms containing two hetero rings
- C07D413/10—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms containing two hetero rings linked by a carbon chain containing aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D413/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms
- C07D413/14—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms containing three or more hetero rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D498/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms
- C07D498/12—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms in which the condensed system contains three hetero rings
- C07D498/14—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
- C07F7/0812—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te comprising a heterocyclic ring
- C07F7/0816—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te comprising a heterocyclic ring said ring comprising Si as a ring atom
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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Description
Arは、1以上のラジカルR2によって置換されていてもよい、5〜30の芳香族環原子を有する、芳香族またはヘテロ芳香族の環系であり;
Ar1は、出現毎に同一であるかまたは異なり、以下の式(Ar1−1)〜(Ar1−4)のうちの1つの基であり、
Ar2は、出現毎に同一であるかまたは異なり、1以上のラジカルR2によって置換されていてもよい、10〜18の芳香族環原子を有するアリール基であり;
ArSは、出現毎に同一であるかまたは異なり、それぞれのケースにおいて1以上のラジカルR2によって置換されていてもよい、5〜40の芳香族環原子を有する、芳香族またはヘテロ芳香族の環系であり;
またはE1、E2および/またはE3が以下の式(E−1)基を示し、
R、R1、R2、R3は、出現毎に同一であるかまたは異なり、H、D、F、Br、Cl、I、C(=O)R4、CN、Si(R4)3、N(R4)2、P(=O)(R4)2、S(=O)R4、S(=O)2R4、1〜20のC原子を有する直鎖のアルキルもしくはアルコキシ基または3〜20のC原子を有する分岐もしくは環状のアルキルもしくはアルコキシ基または2〜20のC原子を有するアルケニルもしくはアルキニル基(ここで、上述の基はそれぞれ1以上のラジカルR4によって置換されていてもよく、かつ上述の基中の1以上のCH2基が、−R4C=CR4−、−C≡C−、Si(R4)2、C=O、C=NR4、−C(=O)O−、−C(=O)NR4−、NR4、P(=O)(R4)、−O−、−S−、SO、またはSO2によって置き換えられていてもよい)、それぞれのケ−スにおいて1以上のラジカルR4によって置換されていてもよい、5〜30の芳香族環原子を有する、芳香族もしくはヘテロ芳香族の環系、または1以上のラジカルR4によって置換されていてもよい、5〜30の芳香族環原子を有する、アリールオキシもしくはヘテロアリールオキシ基であり、ここで、2つの隣接する置換基R、2つの隣接する置換基R1、2つの隣接する置換基R2および/または2つの隣接する置換基R3が、互いに結合され、脂肪族または芳香族の環を形成していてもよく;
R5は、出現毎に同一であるかまたは異なり、H、または1〜20のC原子を有する、脂肪族、芳香族および/またはヘテロ芳香族炭化水素ラジカル(ここで、さらに、H原子がFによって置き換えられていてもよい)であり;ここで、2つの隣接する置換基R5が互いに単環状もしくは多環状の、脂肪族または芳香族の環系を形成していてもよく;
ここで、a+b=1または2;かつ c+d=1または2であり;
fは、出現毎に同一であるかまたは異なり、0、1、2または3であり;
g、hは、出現毎に同一であるかまたは異なり、0、1または2であり;ここで、g+a+b≦3かつh+c+d≦3であり;
mは、出現毎に同一であるかまたは異なり、0、1、2、3または4であり;
iは、出現毎に同一であるかまたは異なり、0、1、2または3であり、ここでi=0は基Arsが存在せず、単結合で置き換えられていることを意味する。
−2つのラジカルが2つのC原子に結合されていて、ここで、この2つのC原子は互いに直接結合されていること;または
−2つのラジカルが同一のC原子に結合されていること
を意味するものと解される。
a+c=1かつb+d=0;または
b+d=1かつa+c=0。
式中、他の記号Ar、V、RおよびE1、ならびに添え字i、f、gおよびhは、請求項1に記載の意味を有し;ただし、式(1−1−a)において、フェノキサジン構造またはフェニルフェノキサジン構造がこの基Vを介しておこる場合に、VはCである。
(B)ヤマモト重合;
(C)スティル(STILLE)重合;および
(D)ハートウィグ−ブッフバルト(HARTWIG−BUCHWALD)重合。
アノード−正孔注入層−正孔輸送層−発光層−電子輸送層−電子注入層−カソード。前記の層の全てが存在している必要はなく、また更なる層が付加的に存在していてもよい。
フェノキサジン(23g、0.12mol)、p−ブロモフェニルベンゼン(31.22g、0.13mol)およびtert−ブトキシドナトリウム(35.83g、0.37mol)が800mlのトルエン中で懸濁される。溶液は脱気され、アルゴンで満たされる。その後、酢酸パラジウム(II)(1.37g、1.88mmol)およびトリ−tert−ブチルホスフィン(溶液1mol/L トルエン、0.01mol)が加えられる。反応混合物は、還流下で一晩中加熱される。懸濁液は冷却され、水で処理される。集められた有機相は真空下で濃縮され、残留固体は熱抽出により精製される。生成量は32.4g(0.1mol、理論の79%)であり、白色固体である。
化合物Int−a2〜Int−a5は、Int−a1と同様に調製される。
化合物Int−F−Ph(化合物Int−a7)
Int−F−Hの調製
10g(54.6mmol)フェノキサジン、14.2g(82mmol)1,3−ジクロロ−2−フルオロ−ベンゼンおよび25g(0.11mol)リン酸カリウムが250mLのDMFに溶解され、還流下で16時間撹拌される。室温に冷却後、300mlのトルエンおよび500mlの水が加えられ、相が分離される。有機相は水で洗浄され(3x300ml)、そして水相はトルエンで2回抽出される。混合された有機相は、減圧乾燥され、トルエン/へプタンから再結晶化により精製される。収率:16g(0.05mol;90%)。
Int−F−Phの調製
Int−F−H:
14g(43mmol)10−(2,6−ジクロロ−フェニル)−10H−フェノキサジン、13.7g(107mmol)フェニルボロン酸、26g(171mmol)フッ化セシウムおよび1.6g(2.1mmol)トランス−ジクロロビス(トリシクロヘキシル−ホスフィン)パラジウム(II)が600mlのジオキサン中で16時間還流された。室温に冷却後、トルエン(300ml)および水(400ml)が加えられた。有機相は水で洗浄され(3x300ml)、そして水相はトルエンで2回抽出された。混合された有機相は減圧乾燥され、トルエン/へプタンにより再結晶化により精製された。収率:14.6g(35mmol;82%)。
Int−F−Ph向け:
化合物Int−a1(32g、0.1mol)が800mlの氷酢酸および800mlのクロロホルム中で溶解される。次に、N−ブロモサクシンイミド(34.8g、0.2mol)が暗中ゆっくりと加えられる。4時間後、反応は水で止められ、有機相は水で数回洗浄される。得られた固体は熱エタノールで2回抽出される。生成量は43.8g(0.1mol、理論の98%)であり、白色固体である。
化合物Int−b1(20g、0.04mol)、2−(9,9−ジメチルフルオレン)−4,4,5,5−テトラメチルジ沖サボロラン(27.27g、0.085mol)およびトリリン酸カリウム1水和物(37.35g、0.16mol)が、200mlの水、200mlのトルエンおよび200mlの1,4−ジオキサン中で懸濁される。溶液は脱気され、アルゴンで満たされる。次に、酢酸パラジウム(II)(0.36g、1.6mmol)およびトリ−オルト−トリホスフィン(1.48g、4.87mmol)が加えられ、反応物は還流下で一晩中沸騰される。懸濁液は冷却され、水で処理される。集められた有機相は真空下で濃縮され、残留固体は熱抽出により精製され(トルエン)、再結晶化により精製される(トルエン、そしてEtOAc)。生成量は17.0g(23.6mmol、理論の59%)であり、黄色固体として得られる。
化合物Int−b1(21.45g、0.05M)、ビスピナコラトジボラン(31.35g、0.12mol)および酢酸カリウム(30.3g、0.31mol)が500mlの1,4−ジオキサン中で懸濁される。反応混合物は脱気され、アルゴンで満たされる。そして、[1,1’−ビス−ジフェニルホスフィノ−フェロセン]パラジウム(II)ジクロライド(3.35g、4.1mmol)が加えられ、反応物は還流下で一晩中撹拌される。懸濁液は冷却され、アルミナで直接ろ過される。残留固体は熱エタノールで撹拌される。生成量は 17.25g(0.033mol、理論の66%)であり、白色固体である。
化合物Int−c1(17g、0.033mol)、1−ブロモ−フェニル−エチルエステル(18.74g、0.067mol)およびトリリン酸カリウム1水和物(30.39g、0.132mol)が50mlの水、50mlのトルエンおよび50mlの1,4−ジオキサン中で懸濁される。溶液は脱気され、アルゴンで満たされる。次に、酢酸パラジウム(II)(0.29g、1.32mmol)およびトリ−オルト−トリルホスフィン(1.21g、3.96mmol)が加えられ、反応物は還流下で一晩中沸騰される。懸濁液は冷却され、そして水処理される。集められた有機相は真空下で濃縮され、残留固体は、熱抽出(トルエン)および再結晶化(トルエン/へプタン)により精製される。生成量は14.1g(00.21mol、理論の65%)であり、黄色固体である。
塩化セリウム(III)(11.3g、0.046mol)が最初に乾燥THFに加えられ、そして化合物Int−d1(14g、0.021mol)が乾燥THF中で溶解され、溶液は反応混合物に滴下され、そして1時間撹拌される。その後、MeMgCl(3M THF中、0.13mol)溶液が反応混合物に滴下される。2時間後、反応物は一晩で室温に加熱される。氷による冷却下で、反応は水で止められる。相分離後、有機相は乾燥され、溶媒は蒸発する。そして、有機相は、へプタン/トルエンの再結晶化により精製される。生成量は12.5g(0.02mol、理論の95%)であり、黄色固体である。
ポリリン酸(13.1g、0.13mol)およびメタンスルホン酸(12.5g、0.13mol)がフラスコに導入される。そして、DCM中で懸濁された化合物Int−e1(12g、0.019mol)を含んでなる溶液が反応混合物にゆっくりと加えられ、反応混合物は氷浴で冷却される。反応混合物はさらに2時間撹拌され、続いてエタノールで処理される。水を加えた後、相分離がおこる。有機相は水で洗浄され、そして乾燥され、そして溶媒が蒸発する。残留物はトルエン/へプタンで数回再結晶化される。生成量は8.65g(0.15mol、理論の77%)であり、黄色固体である。
OLED素子の製造
OLEDの製造は、適用される層厚および層順で、WO04/058911の記載によって行われる。以下の例V1〜E5(表1参照)はさまざまなOLEDのデータを示す。
構造化ITO(50nm、酸化インジウムスズ)を備えるガラス基板が、20nmのPEDOT:PSS(ポリ(3,4−エチレンジオキシチオフェン)ポリ(スチレンスルホネート)、Heraeus Precious Metals GmbH(ドイツ)からCLEVIOS(商標名)PVP AI 4083として購入され、水ベースの溶液からスピンコートされる)で被覆され、OLED素子が製造される基板が形成される。
−基板、
−ITO(50nm)、
−バッファー(20nm)、
−正孔注入層(HTL195%、HIL5%)(20nm)
−正孔輸送層(HTL1)(表1参照)、
−発光層(EML)(表1参照)(20nm)、
−電子輸送層(ETL)(30nm)、
−電子注入層(EIL)(3nm)、
−カソード。
本発明の化合物は、青色蛍光OLED素子の発光層を形成する青色蛍光マトリックスに混合された発光体(ドーパント)として特に適している。本発明の例は、D1、D2、D3、D4およびD5である。最新技術による比較例はVDによって示される(表3の構造参照)。
Claims (6)
- 式(1−1−b)〜(1−1−i)の化合物。
Arは、以下の式(ArN−1)〜(ArN−22)のうちの1つから選択される芳香族環系であり、
Vは、CR2 であり;
E 1 は、出現毎に同一であるかまたは異なり、C(R1)2 、O、およびSから選択されるか;またはE 1 が以下の式(E−1)基を示し、
R 1 は、出現毎に同一であるかまたは異なり、H、D、F、1〜10のC原子を有する直鎖のアルキル基および3〜10のC原子を有する分岐もしくは環状のアルキル基(ここで、上述の基はそれぞれ1以上のラジカルR4によって置換されていてもよい)からなる群から選択され;
R 2 は、出現毎に同一であるかまたは異なり、H、D、F、1〜10のC原子を有する直鎖のアルキル基または3〜10のC原子を有する分岐もしくは環状のアルキル基(ここで、上述の基はそれぞれ1以上のラジカルR 4 によって置換されていてもよい)、およびフェニル基(これは、それぞれのケースにおいて1以上のラジカルR 4 によって置換されていてもよい)からなる群から選択され;
R 3 は、出現毎に同一であるかまたは異なり、H、D、F、CN、1〜20のC原子を有する直鎖のアルキル基または3〜20のC原子を有する分岐もしくは環状のアルキル基(ここで、上述の基はそれぞれ1以上のラジカルR 4 によって置換されていてもよい)、および5〜30の芳香族環原子を有する芳香族もしくはヘテロ芳香族環系(これは、それぞれのケースにおいて1以上のラジカルR 4 によって置換されていてもよい)からなる群から選択され;
R4は、出現毎に同一であるかまたは異なり、H、F、1〜10のC原子を有する直鎖のアルキル基または3〜10のC原子を有する分岐もしくは環状のアルキル基(ここで、上述の基はそれぞれ1以上のラジカルR5によって置換されていてもよい)であり;
R5は、出現毎に同一であるかまたは異なり、H、または1〜20のC原子を有する、脂肪族、芳香族および/またはヘテロ芳香族炭化水素ラジカル(ここで、さらに、H原子がFによって置き換えられていてもよい)であり;ここで、2つの隣接する置換基R5が互いに単環状もしくは多環状の、脂肪族または芳香族環の系を形成していてもよく;
mは、出現毎に同一であるかまたは異なり、0、1、2、3または4であり;
iは、出現毎に同一であるかまたは異なり、0、1、2または3であり、ここでi=0は基Arsが存在せず、単結合で置き換えられていることを意味する) - 1以上の遷移金属触媒カップリング反応により、アリール、ヘテロアリール、ジアリールアミノ基がフェノキサジン誘導体のN原子に対してパラ位に置換基として導入されることを特徴とする、請求項1に記載の化合物の調製方法。
- 請求項1に記載の少なくとも1つの化合物および少なくとも1つの溶剤を含んでなる配合物。
- 請求項1に記載の少なくとも1つの化合物を含んでなる、電子素子。
- 有機集積回路(O−IC)、有機電界効果トランジスタ(O−FET)、有機薄膜トランジスタ(O−TFT)、有機発光トランジスタ(O−LET)、有機太陽電池(O−SC)、有機光学検査器、有機光受容器、有機電場消光素子(O−FQD)、発光電子化学電池(LEC)、有機レーザーダイオード(O−laser)、および有機エレクトロルミネッセンス素子(OLED)から選択されることを特徴とする、請求項4に記載の電子素子。
- 請求項1に記載の化合物が、以下のいずれかの機能:
−発光層における青色発光体として、
−正孔輸送または正孔注入層における正孔輸送材料として、
−発光層におけるマトリックス材料として、
−電子ブロック材料として、
−励起ブロック材料として
で使用されることを特徴とする、有機エレクトロルミネッセンス素子の群から選択される、請求項4に記載の電子素子。
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