JP6770853B2 - リードフレーム及び電子部品装置とそれらの製造方法 - Google Patents

リードフレーム及び電子部品装置とそれらの製造方法 Download PDF

Info

Publication number
JP6770853B2
JP6770853B2 JP2016168847A JP2016168847A JP6770853B2 JP 6770853 B2 JP6770853 B2 JP 6770853B2 JP 2016168847 A JP2016168847 A JP 2016168847A JP 2016168847 A JP2016168847 A JP 2016168847A JP 6770853 B2 JP6770853 B2 JP 6770853B2
Authority
JP
Japan
Prior art keywords
metal plate
lead frame
electronic component
plating layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016168847A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018037504A (ja
JP2018037504A5 (https=
Inventor
真太郎 林
真太郎 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2016168847A priority Critical patent/JP6770853B2/ja
Priority to US15/690,532 priority patent/US10008437B2/en
Priority to CN201710762410.3A priority patent/CN107799475B/zh
Priority to TW106129739A priority patent/TWI741021B/zh
Publication of JP2018037504A publication Critical patent/JP2018037504A/ja
Publication of JP2018037504A5 publication Critical patent/JP2018037504A5/ja
Application granted granted Critical
Publication of JP6770853B2 publication Critical patent/JP6770853B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/042—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/6875—Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2016168847A 2016-08-31 2016-08-31 リードフレーム及び電子部品装置とそれらの製造方法 Active JP6770853B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016168847A JP6770853B2 (ja) 2016-08-31 2016-08-31 リードフレーム及び電子部品装置とそれらの製造方法
US15/690,532 US10008437B2 (en) 2016-08-31 2017-08-30 Lead frame and electronic component device
CN201710762410.3A CN107799475B (zh) 2016-08-31 2017-08-30 引线框架和电子部件装置
TW106129739A TWI741021B (zh) 2016-08-31 2017-08-31 導線架及電子組件裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016168847A JP6770853B2 (ja) 2016-08-31 2016-08-31 リードフレーム及び電子部品装置とそれらの製造方法

Publications (3)

Publication Number Publication Date
JP2018037504A JP2018037504A (ja) 2018-03-08
JP2018037504A5 JP2018037504A5 (https=) 2019-05-09
JP6770853B2 true JP6770853B2 (ja) 2020-10-21

Family

ID=61243421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016168847A Active JP6770853B2 (ja) 2016-08-31 2016-08-31 リードフレーム及び電子部品装置とそれらの製造方法

Country Status (4)

Country Link
US (1) US10008437B2 (https=)
JP (1) JP6770853B2 (https=)
CN (1) CN107799475B (https=)
TW (1) TWI741021B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6761738B2 (ja) * 2016-11-15 2020-09-30 新光電気工業株式会社 リードフレーム及びその製造方法、電子部品装置の製造方法
JP7039245B2 (ja) * 2017-10-18 2022-03-22 新光電気工業株式会社 リードフレーム及びその製造方法と電子部品装置
CN109065518B (zh) * 2018-06-13 2020-12-25 南通通富微电子有限公司 一种半导体芯片封装阵列
US11177192B2 (en) * 2018-09-27 2021-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including heat dissipation structure and fabricating method of the same
JP7161904B2 (ja) * 2018-10-11 2022-10-27 新光電気工業株式会社 半導体装置の製造方法
US11545418B2 (en) * 2018-10-24 2023-01-03 Texas Instruments Incorporated Thermal capacity control for relative temperature-based thermal shutdown
TWI736859B (zh) * 2019-03-18 2021-08-21 矽品精密工業股份有限公司 電子封裝件及其製法
JP2022041152A (ja) * 2020-08-31 2022-03-11 ソニーセミコンダクタソリューションズ株式会社 半導体装置の製造方法、半導体装置、および電子機器
DE102020131070B4 (de) * 2020-11-24 2023-03-09 Infineon Technologies Ag Package mit einer erhöhten Leitung und einer Struktur, die sich vertikal vom Boden des Verkapselungsmittels erstreckt, elektronisches Gerät sowie Verfahren zur Herstellung eines Packages
CN115376928A (zh) * 2021-05-17 2022-11-22 日月光半导体制造股份有限公司 半导体结构及其形成方法
CN113488459A (zh) * 2021-05-18 2021-10-08 日月光半导体制造股份有限公司 半导体结构及其形成方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332491A (ja) * 1994-08-24 2003-11-21 Fujitsu Ltd 半導体装置
JPH08115989A (ja) * 1994-08-24 1996-05-07 Fujitsu Ltd 半導体装置及びその製造方法
JP2001185651A (ja) * 1999-12-27 2001-07-06 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
TW548843B (en) * 2001-02-28 2003-08-21 Fujitsu Ltd Semiconductor device and method for making the same
JP4034073B2 (ja) * 2001-05-11 2008-01-16 株式会社ルネサステクノロジ 半導体装置の製造方法
JP4533875B2 (ja) * 2006-09-12 2010-09-01 株式会社三井ハイテック 半導体装置およびこの半導体装置に使用するリードフレーム製品並びにこの半導体装置の製造方法
US7807498B2 (en) * 2007-07-31 2010-10-05 Seiko Epson Corporation Substrate, substrate fabrication, semiconductor device, and semiconductor device fabrication
JP2009164232A (ja) * 2007-12-28 2009-07-23 Mitsui High Tec Inc 半導体装置及びその製造方法並びにリードフレーム及びその製造方法
WO2010036051A2 (en) * 2008-09-25 2010-04-01 Lg Innotek Co., Ltd. Structure and manufacture method for multi-row lead frame and semiconductor package
WO2010052973A1 (ja) * 2008-11-05 2010-05-14 株式会社三井ハイテック 半導体装置及びその製造方法
JP2010129591A (ja) * 2008-11-25 2010-06-10 Mitsui High Tec Inc リードフレーム、このリードフレームを用いた半導体装置及びその中間製品、並びにこれらの製造方法
JP2011029335A (ja) 2009-07-23 2011-02-10 Mitsui High Tec Inc リードフレーム及びリードフレームの製造方法とこれを用いた半導体装置の製造方法
JP2011103371A (ja) * 2009-11-11 2011-05-26 Seiko Epson Corp 半導体装置の製造方法、基板及び半導体装置のアレイ
US8017447B1 (en) * 2010-08-03 2011-09-13 Linear Technology Corporation Laser process for side plating of terminals
US8076184B1 (en) * 2010-08-16 2011-12-13 Stats Chippac, Ltd. Semiconductor device and method of forming wafer-level multi-row etched leadframe with base leads and embedded semiconductor die
US8912046B2 (en) * 2010-10-28 2014-12-16 Stats Chippac Ltd. Integrated circuit packaging system with lead frame and method of manufacture thereof
US8723324B2 (en) * 2010-12-06 2014-05-13 Stats Chippac Ltd. Integrated circuit packaging system with pad connection and method of manufacture thereof
TWI397964B (zh) * 2011-01-19 2013-06-01 宇芯（毛里求斯）控股有限公司 部分圖案化之引線框架及其在半導體封裝中製作與使用的方法
US8525325B2 (en) * 2011-12-14 2013-09-03 Stats Chippac Ltd. Integrated circuit packaging system with leads and method of manufacture thereof
US8569112B2 (en) * 2012-03-20 2013-10-29 Stats Chippac Ltd. Integrated circuit packaging system with encapsulation and leadframe etching and method of manufacture thereof
US9312194B2 (en) * 2012-03-20 2016-04-12 Stats Chippac Ltd. Integrated circuit packaging system with terminals and method of manufacture thereof
JP2016171190A (ja) * 2015-03-12 2016-09-23 イビデン株式会社 パッケージ−オン−パッケージ用プリント配線板
CN204834611U (zh) * 2015-07-29 2015-12-02 嘉盛半导体(苏州)有限公司 引线框架及其单元、半导体封装结构及其单元
JP6608672B2 (ja) * 2015-10-30 2019-11-20 新光電気工業株式会社 半導体装置及びその製造方法、リードフレーム及びその製造方法

Also Published As

Publication number Publication date
CN107799475A (zh) 2018-03-13
JP2018037504A (ja) 2018-03-08
TWI741021B (zh) 2021-10-01
US10008437B2 (en) 2018-06-26
CN107799475B (zh) 2023-04-28
US20180061746A1 (en) 2018-03-01
TW201813034A (zh) 2018-04-01

Similar Documents

Publication Publication Date Title
JP6770853B2 (ja) リードフレーム及び電子部品装置とそれらの製造方法
KR0183412B1 (ko) 반도체 장치 및 그 제조방법
KR102054385B1 (ko) 수지 봉지형 반도체 장치 및 그 제조 방법
CN101834166B (zh) 具有支架触点以及管芯附垫的无引脚集成电路封装
JP7271337B2 (ja) 電子部品装置及び電子部品装置の製造方法
JPH11312749A (ja) 半導体装置及びその製造方法及びリードフレームの製造方法
TWI576962B (zh) 半導體基板結構與半導體封裝及其製造方法
JP2009055014A (ja) 基板及びその製造方法、並びに半導体装置及びその製造方法
TWI666737B (zh) 佈線基板、製造佈線基板之方法及電子組件裝置
JP2018037504A5 (https=)
JP5784280B2 (ja) 電子デバイスパッケージ及び製造方法
JP2013247199A (ja) リードフレーム及びその製造方法
JP6761738B2 (ja) リードフレーム及びその製造方法、電子部品装置の製造方法
JP6643213B2 (ja) リードフレーム及びその製造方法と電子部品装置
JP2002368155A (ja) 配線基板、半導体装置及び配線基板の製造方法
JP5264640B2 (ja) 積層型半導体装置及びその製造方法
JP6524526B2 (ja) 半導体素子実装用基板及び半導体装置、並びにそれらの製造方法
JP6318084B2 (ja) 半導体装置及びその製造方法
JP7145414B2 (ja) リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法
TW201017845A (en) Lead-free quad flat leadframe, lead-free quad flat package unit, and method for fabricating the same
JP2009212114A (ja) 突起電極の構造、素子搭載用基板およびその製造方法、半導体モジュール、ならびに携帯機器
JP2007234683A (ja) 半導体装置およびその製造方法
JP2009129922A (ja) 半導体パッケージの製造方法
JP2009141139A (ja) 半導体装置
KR20130103047A (ko) 반도체 패키지

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20180209

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20180215

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190322

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190322

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191217

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20191219

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200131

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200714

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200908

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200928

R150 Certificate of patent or registration of utility model

Ref document number: 6770853

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150