JP2018037504A - リードフレーム及び電子部品装置とそれらの製造方法 - Google Patents
リードフレーム及び電子部品装置とそれらの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 191
- 239000002184 metal Substances 0.000 claims abstract description 191
- 238000007747 plating Methods 0.000 claims abstract description 115
- 238000007789 sealing Methods 0.000 claims abstract description 45
- 229920005989 resin Polymers 0.000 claims abstract description 43
- 239000011347 resin Substances 0.000 claims abstract description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 35
- 229910052802 copper Inorganic materials 0.000 claims description 35
- 239000010949 copper Substances 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 35
- 229910000510 noble metal Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 40
- 229910000679 solder Inorganic materials 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000010931 gold Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
- H01L21/4832—Etching a temporary substrate after encapsulation process to form leads
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- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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Abstract
Description
図4〜図9は第1実施形態のリードフレームの製造方法を説明するための図、図10は実施形態のリードフレームを示す図、図11〜図15は第1実施形態の電子部品装置を説明するための図である。
また、上面側の一つの突出部E1に対応して下面側の一つの突出部E2が設けられることで、一つの電極14aが設けられている。
図16〜図18は第2実施形態のリードフレームを説明するための図、図19及び図20は第2実施形態の電子部品装置を説明するための図である。
図21〜図23は、第3実施形態のリードフレーム及び電子部品装置を説明するための図である。第3実施形態では、リードフレームに半導体チップがフリップチップ接続される。
図24は第4実施形態のリードフレーム及び電子部品装置を説明するための図である。
Claims (10)
- 金属板の上面の突出部と、前記金属板の下面の突出部とを備えた柱状の電極と、
前記電極の下端から側面にかけて形成された金属めっき層と
を備えた端子部を有することを特徴とするリードフレーム。 - 前記金属板にダイパッド部が形成され、前記ダイパッド部の周囲に前記端子部が配置されていることを特徴とする請求項1に記載のリードフレーム。
- 前記金属板及び前記電極は、銅から形成され、
前記金属めっき層は、貴金属を含むことを特徴とする請求項1又は2に記載のリードフレーム。 - 上端と下端とを備えた柱状の電極と、
前記電極の下端から側面にかけて形成された金属めっき層と
を備えた端子部を有するリードフレームと、
前記リードフレームに搭載され、前記端子部の上端に接続された電子部品と、
前記リードフレーム及び前記電子部品を封止する封止樹脂と
を有し、
前記封止樹脂に前記端子部の上端が埋設されると共に、
前記封止樹脂から前記端子部の下端と側面の一部が突出し、前記封止樹脂から前記金属めっき層が露出していることを特徴とする電子部品装置。 - 前記電極の側面と前記金属めっき層との間に隙間が設けられていることを特徴とする請求項4に記載の電子部品装置。
- 前記電極の側面に突起が形成されていることを特徴とする請求項4又は5に記載の電子部品装置。
- 金属板の上面の突出部と前記金属板の下面の突出部とを備えた柱状の電極を形成する工程と、
前記電極の下端から側面にかけて金属めっき層を形成して、前記電極と前記金属めっき層を備えた端子部を得る工程と
を有することを特徴とするリードフレームの製造方法。 - 前記電極を形成する工程において、前記金属板にダイパッド部を形成し、
前記ダイパッド部の周囲に前記端子が配置されることを特徴とする請求項7に記載のリードフレームの製造方法。 - 金属板の上面の突出部と前記金属板の下面の突出部とを備えた柱状の電極を形成すると共に、前記電極の下端から側面にかけて金属めっき層を形成して、前記電極と前記金属めっき層を備えた端子部を有するリードフレームを製造する工程と、
前記リードフレームに電子部品を搭載し、前記電子部品と前記端子部の上端とを接続する工程と、
前記金属板の上面に、前記端子部の上端及び前記電子部品を封止する封止樹脂を形成する工程と、
前記金属めっき層をマスクとして前記金属板の下面をエッチングして、前記金属板を除去する工程と
を有することを特徴とする電子部品装置の製造方法。 - 前記リードフレームを製造する工程において、
前記金属板にダイパッド部を形成し、前記ダイパッド部の周囲に前記端子部が配置され、
前記リードフレームに電子部品を搭載する工程において、
前記ダイパッド部に前記電子部品が搭載されることを特徴とする請求項9に記載の電子部品装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016168847A JP6770853B2 (ja) | 2016-08-31 | 2016-08-31 | リードフレーム及び電子部品装置とそれらの製造方法 |
CN201710762410.3A CN107799475B (zh) | 2016-08-31 | 2017-08-30 | 引线框架和电子部件装置 |
US15/690,532 US10008437B2 (en) | 2016-08-31 | 2017-08-30 | Lead frame and electronic component device |
TW106129739A TWI741021B (zh) | 2016-08-31 | 2017-08-31 | 導線架及電子組件裝置 |
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JP2016168847A JP6770853B2 (ja) | 2016-08-31 | 2016-08-31 | リードフレーム及び電子部品装置とそれらの製造方法 |
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JP2018037504A true JP2018037504A (ja) | 2018-03-08 |
JP2018037504A5 JP2018037504A5 (ja) | 2019-05-09 |
JP6770853B2 JP6770853B2 (ja) | 2020-10-21 |
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US (1) | US10008437B2 (ja) |
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TW (1) | TWI741021B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019075496A (ja) * | 2017-10-18 | 2019-05-16 | 新光電気工業株式会社 | リードフレーム及びその製造方法と電子部品装置 |
JP2020061503A (ja) * | 2018-10-11 | 2020-04-16 | 新光電気工業株式会社 | 半導体装置の製造方法、及び半導体装置 |
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US20180061746A1 (en) | 2018-03-01 |
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