JP6702646B2 - ボディバイアスされたスイッチ装置 - Google Patents
ボディバイアスされたスイッチ装置 Download PDFInfo
- Publication number
- JP6702646B2 JP6702646B2 JP2014020289A JP2014020289A JP6702646B2 JP 6702646 B2 JP6702646 B2 JP 6702646B2 JP 2014020289 A JP2014020289 A JP 2014020289A JP 2014020289 A JP2014020289 A JP 2014020289A JP 6702646 B2 JP6702646 B2 JP 6702646B2
- Authority
- JP
- Japan
- Prior art keywords
- fet
- terminal
- circuit
- node
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
Landscapes
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/764,655 | 2013-02-11 | ||
| US13/764,655 US9214932B2 (en) | 2013-02-11 | 2013-02-11 | Body-biased switching device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018166816A Division JP6800926B2 (ja) | 2013-02-11 | 2018-09-06 | ボディバイアスされたスイッチ装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014155227A JP2014155227A (ja) | 2014-08-25 |
| JP2014155227A5 JP2014155227A5 (enExample) | 2017-03-16 |
| JP6702646B2 true JP6702646B2 (ja) | 2020-06-03 |
Family
ID=51261296
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014020289A Active JP6702646B2 (ja) | 2013-02-11 | 2014-02-05 | ボディバイアスされたスイッチ装置 |
| JP2018166816A Active JP6800926B2 (ja) | 2013-02-11 | 2018-09-06 | ボディバイアスされたスイッチ装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018166816A Active JP6800926B2 (ja) | 2013-02-11 | 2018-09-06 | ボディバイアスされたスイッチ装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9214932B2 (enExample) |
| JP (2) | JP6702646B2 (enExample) |
| KR (1) | KR102121075B1 (enExample) |
| CN (1) | CN103986449B (enExample) |
| FR (1) | FR3002096B1 (enExample) |
| IL (1) | IL230677A (enExample) |
| TW (1) | TWI675551B (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9214932B2 (en) | 2013-02-11 | 2015-12-15 | Triquint Semiconductor, Inc. | Body-biased switching device |
| US8923782B1 (en) * | 2013-02-20 | 2014-12-30 | Triquint Semiconductor, Inc. | Switching device with diode-biased field-effect transistor (FET) |
| US8977217B1 (en) * | 2013-02-20 | 2015-03-10 | Triquint Semiconductor, Inc. | Switching device with negative bias circuit |
| US9203396B1 (en) | 2013-02-22 | 2015-12-01 | Triquint Semiconductor, Inc. | Radio frequency switch device with source-follower |
| US9595959B2 (en) * | 2013-09-06 | 2017-03-14 | Ferfics Limited | Radio frequency switch with improved linearity |
| US9525063B2 (en) | 2013-10-30 | 2016-12-20 | Infineon Technologies Austria Ag | Switching circuit |
| US9048838B2 (en) * | 2013-10-30 | 2015-06-02 | Infineon Technologies Austria Ag | Switching circuit |
| US9379698B2 (en) | 2014-02-04 | 2016-06-28 | Triquint Semiconductor, Inc. | Field effect transistor switching circuit |
| KR102211167B1 (ko) * | 2014-08-14 | 2021-02-02 | 삼성전자주식회사 | 바디 바이어스 전압 생성기 및 이를 포함하는 시스템-온-칩 |
| US9503074B2 (en) * | 2015-03-06 | 2016-11-22 | Qualcomm Incorporated | RF circuit with switch transistor with body connection |
| KR101670167B1 (ko) * | 2015-03-25 | 2016-10-27 | 삼성전기주식회사 | 고주파 스위치 회로 |
| CN105162444A (zh) * | 2015-09-12 | 2015-12-16 | 上海华虹宏力半导体制造有限公司 | 一种射频开关体偏置电路 |
| US10454529B2 (en) * | 2016-01-08 | 2019-10-22 | Qorvo Us, Inc. | RF branch with improved power handling |
| US10270437B2 (en) | 2016-01-08 | 2019-04-23 | Qorvo Us, Inc. | RF switch having reduced signal distortion |
| US9800285B2 (en) * | 2016-02-27 | 2017-10-24 | Skyworks Solutions, Inc. | Circuits and methods for biasing switch body |
| JP6508130B2 (ja) * | 2016-05-31 | 2019-05-08 | トヨタ自動車株式会社 | カーシェアリングシステム |
| JP6831752B2 (ja) * | 2016-06-08 | 2021-02-17 | パナソニック株式会社 | 基板電圧制御回路 |
| CN106230419B (zh) * | 2016-07-27 | 2019-04-19 | 上海华虹宏力半导体制造有限公司 | Soi射频开关结构及集成电路 |
| CN106230417B (zh) * | 2016-07-27 | 2019-08-23 | 上海华虹宏力半导体制造有限公司 | Soi射频开关结构及集成电路 |
| EP3297161B1 (en) | 2016-09-15 | 2019-08-21 | Visic Technologies Ltd. | Power device for high voltage and high current switching |
| US10256811B2 (en) * | 2016-11-22 | 2019-04-09 | Electronics And Telecommunications Research Institute | Cascode switch circuit including level shifter |
| WO2018096535A1 (en) * | 2016-11-24 | 2018-05-31 | Visic Technologies Ltd. | Power device for high voltage and high current switching |
| CN106788369A (zh) * | 2016-11-28 | 2017-05-31 | 无锡中普微电子有限公司 | 具有改进偏置电路的射频开关电路 |
| CN106603053A (zh) * | 2016-11-28 | 2017-04-26 | 无锡中普微电子有限公司 | 具有改进偏置电路的射频开关电路 |
| US10320379B2 (en) | 2016-12-21 | 2019-06-11 | Qorvo Us, Inc. | Transistor-based radio frequency (RF) switch |
| US10608623B2 (en) | 2016-12-21 | 2020-03-31 | Qorvo US. Inc. | Transistor-based radio frequency (RF) switch |
| US10355615B2 (en) * | 2017-03-30 | 2019-07-16 | Lapis Semiconductor Co., Ltd. | Rectifier circuit for opposite-phase currents |
| EP3419169A3 (de) * | 2017-05-05 | 2019-05-15 | Elmos Semiconductor Aktiengesellschaft | Vorrichtung zur ansteuerung einer elektronischen sicherung für mindestens einen elektrischen verbraucher insbesondere eines fahrzeugs |
| JP7337561B2 (ja) * | 2019-06-25 | 2023-09-04 | ローム株式会社 | アナログスイッチ回路、ボリウム回路、半導体集積回路 |
| US11681313B2 (en) | 2020-11-25 | 2023-06-20 | Changxin Memory Technologies, Inc. | Voltage generating circuit, inverter, delay circuit, and logic gate circuit |
| EP4033312B1 (en) | 2020-11-25 | 2024-08-21 | Changxin Memory Technologies, Inc. | Control circuit and delay circuit |
| EP4033664B1 (en) * | 2020-11-25 | 2024-01-10 | Changxin Memory Technologies, Inc. | Potential generation circuit, inverter, delay circuit, and logic gate circuit |
| EP4033661B1 (en) | 2020-11-25 | 2024-01-24 | Changxin Memory Technologies, Inc. | Control circuit and delay circuit |
| TWI769789B (zh) | 2021-04-21 | 2022-07-01 | 財團法人工業技術研究院 | 陣列開關電路及系統晶片封裝結構 |
| TWI785757B (zh) * | 2021-08-24 | 2022-12-01 | 逢甲大學 | 電晶體及其放大器 |
| US12021076B2 (en) * | 2021-10-07 | 2024-06-25 | Nxp B.V. | Transistor switches with electrostatic discharge protection |
| JP7735225B2 (ja) * | 2021-11-29 | 2025-09-09 | 株式会社東芝 | 半導体装置 |
| CN115395936A (zh) * | 2022-07-18 | 2022-11-25 | 上海唯捷创芯电子技术有限公司 | 一种高线性度的射频开关电路、芯片及其电子设备 |
| KR20240039936A (ko) | 2022-09-20 | 2024-03-27 | 삼성전자주식회사 | 적응적인 바이어스 제어가 가능한 반도체 메모리 장치 및 이의 동작 방법 |
| TWI824867B (zh) | 2022-12-05 | 2023-12-01 | 財團法人工業技術研究院 | 開關電路及可程式連接晶片 |
| CN117559975B (zh) * | 2024-01-12 | 2024-09-17 | 上海唯捷创芯电子技术有限公司 | 优化堆叠开关管电压分布均衡性的射频开关电路及芯片 |
Family Cites Families (120)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3551788A (en) | 1968-09-13 | 1970-12-29 | Servo Corp Of America | High voltage transistorized stack with leakage current compensation |
| US3699359A (en) | 1971-04-20 | 1972-10-17 | Philco Ford Corp | Electronic latching device |
| JPS4811317U (enExample) * | 1971-06-19 | 1973-02-08 | ||
| US3988727A (en) * | 1974-06-24 | 1976-10-26 | P. R. Mallory & Co., Inc. | Timed switching circuit |
| US3975671A (en) * | 1975-02-24 | 1976-08-17 | Intel Corporation | Capacitive voltage converter employing CMOS switches |
| US4053916A (en) | 1975-09-04 | 1977-10-11 | Westinghouse Electric Corporation | Silicon on sapphire MOS transistor |
| DE2851789C2 (de) | 1978-11-30 | 1981-10-01 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Schaltung zum Schalten und Übertragen von Wechselspannungen |
| US4491750A (en) | 1982-09-28 | 1985-01-01 | Eaton Corporation | Bidirectionally source stacked FETs with drain-referenced common gating |
| JPH01254014A (ja) | 1988-04-04 | 1989-10-11 | Toshiba Corp | 電力増幅器 |
| JPH07105447B2 (ja) | 1988-12-15 | 1995-11-13 | 株式会社東芝 | 伝送ゲート |
| US5313083A (en) | 1988-12-16 | 1994-05-17 | Raytheon Company | R.F. switching circuits |
| US5105164A (en) | 1989-02-28 | 1992-04-14 | At&T Bell Laboratories | High efficiency uhf linear power amplifier |
| US5012123A (en) | 1989-03-29 | 1991-04-30 | Hittite Microwave, Inc. | High-power rf switching system |
| JPH0732335B2 (ja) | 1990-11-16 | 1995-04-10 | 日本電信電話株式会社 | 高周波増幅器 |
| JP3243892B2 (ja) | 1993-05-21 | 2002-01-07 | ソニー株式会社 | 信号切り替え用スイッチ |
| US5863823A (en) | 1993-07-12 | 1999-01-26 | Peregrine Semiconductor Corporation | Self-aligned edge control in silicon on insulator |
| US5416043A (en) | 1993-07-12 | 1995-05-16 | Peregrine Semiconductor Corporation | Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
| US5930638A (en) | 1993-07-12 | 1999-07-27 | Peregrine Semiconductor Corp. | Method of making a low parasitic resistor on ultrathin silicon on insulator |
| US5572040A (en) | 1993-07-12 | 1996-11-05 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| US5973382A (en) | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corporation | Capacitor on ultrathin semiconductor on insulator |
| US5973363A (en) | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corp. | CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator |
| US5452473A (en) | 1994-02-28 | 1995-09-19 | Qualcomm Incorporated | Reverse link, transmit power correction and limitation in a radiotelephone system |
| US5553295A (en) | 1994-03-23 | 1996-09-03 | Intel Corporation | Method and apparatus for regulating the output voltage of negative charge pumps |
| JP2801563B2 (ja) | 1994-08-30 | 1998-09-21 | 松下電器産業株式会社 | 通信用無線機の送受信回路、半導体集積回路装置および通信用無線機 |
| JPH08148949A (ja) | 1994-11-18 | 1996-06-07 | Fujitsu Ltd | 高周波増幅器 |
| US5689209A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Low-side bidirectional battery disconnect switch |
| FR2742942B1 (fr) | 1995-12-26 | 1998-01-16 | Sgs Thomson Microelectronics | Generateur de creneaux de haute tension |
| US5777530A (en) | 1996-01-31 | 1998-07-07 | Matsushita Electric Industrial Co., Ltd. | Switch attenuator |
| JP3484462B2 (ja) | 1996-04-11 | 2004-01-06 | 株式会社ルネサステクノロジ | フローティングsoi−mosfetの寿命を予測する方法 |
| JPH09284114A (ja) | 1996-04-19 | 1997-10-31 | Toshiba Microelectron Corp | アナログ入力回路 |
| WO1998006174A1 (en) | 1996-08-05 | 1998-02-12 | Mitsubishi Denki Kabushiki Kaisha | High-frequency integrated circuit for high-frequency radio transmitter-receiver suppressed in influence of high-frequency power leakage |
| US5818099A (en) * | 1996-10-03 | 1998-10-06 | International Business Machines Corporation | MOS high frequency switch circuit using a variable well bias |
| US5920233A (en) | 1996-11-18 | 1999-07-06 | Peregrine Semiconductor Corp. | Phase locked loop including a sampling circuit for reducing spurious side bands |
| JPH10242829A (ja) | 1997-02-24 | 1998-09-11 | Sanyo Electric Co Ltd | スイッチ回路装置 |
| JP3441330B2 (ja) | 1997-02-28 | 2003-09-02 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US6160292A (en) | 1997-04-23 | 2000-12-12 | International Business Machines Corporation | Circuit and methods to improve the operation of SOI devices |
| US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
| US6159825A (en) | 1997-05-12 | 2000-12-12 | Silicon Genesis Corporation | Controlled cleavage thin film separation process using a reusable substrate |
| US6180496B1 (en) | 1997-08-29 | 2001-01-30 | Silicon Genesis Corporation | In situ plasma wafer bonding method |
| JPH11136111A (ja) | 1997-10-30 | 1999-05-21 | Sony Corp | 高周波回路 |
| US6100159A (en) | 1997-11-06 | 2000-08-08 | Advanced Micro Devices, Inc. | Quasi soi device |
| JP3711193B2 (ja) | 1998-01-16 | 2005-10-26 | 三菱電機株式会社 | 送受信切り換え回路 |
| US5959488A (en) | 1998-01-24 | 1999-09-28 | Winbond Electronics Corp. | Dual-node capacitor coupled MOSFET for improving ESD performance |
| US6271067B1 (en) | 1998-02-27 | 2001-08-07 | Micron Technology, Inc. | Methods of forming field effect transistors and field effect transistor circuitry |
| US6249027B1 (en) | 1998-06-08 | 2001-06-19 | Sun Microsystems, Inc. | Partially depleted SOI device having a dedicated single body bias means |
| JP2000022160A (ja) | 1998-07-06 | 2000-01-21 | Hitachi Ltd | 半導体集積回路及びその製造方法 |
| JP4360702B2 (ja) | 1998-08-07 | 2009-11-11 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP3408762B2 (ja) | 1998-12-03 | 2003-05-19 | シャープ株式会社 | Soi構造の半導体装置及びその製造方法 |
| US6111455A (en) | 1998-12-30 | 2000-08-29 | International Business Machines Corporation | Method for controlling delays in silicon on insulator circuits |
| US6171965B1 (en) | 1999-04-21 | 2001-01-09 | Silicon Genesis Corporation | Treatment method of cleaved film for the manufacture of substrates |
| AU6905000A (en) | 1999-08-10 | 2001-03-05 | Silicon Genesis Corporation | A cleaving process to fabricate multilayered substrates using low implantation doses |
| US6376286B1 (en) | 1999-10-20 | 2002-04-23 | Advanced Micro Devices, Inc. | Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer |
| US6229187B1 (en) | 1999-10-20 | 2001-05-08 | Advanced Micro Devices, Inc. | Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer |
| JP3608456B2 (ja) | 1999-12-08 | 2005-01-12 | セイコーエプソン株式会社 | Soi構造のmis電界効果トランジスタの製造方法 |
| US6225667B1 (en) | 2000-01-18 | 2001-05-01 | Advanced Micro Devices, Inc. | Leaky lower interface for reduction of floating body effect in SOI devices |
| US6504212B1 (en) | 2000-02-03 | 2003-01-07 | International Business Machines Corporation | Method and apparatus for enhanced SOI passgate operations |
| JP3504212B2 (ja) | 2000-04-04 | 2004-03-08 | シャープ株式会社 | Soi構造の半導体装置 |
| US6288613B1 (en) | 2000-06-15 | 2001-09-11 | Nortel Networks Limited | Bias circuits for depletion mode field effect transistors |
| JP2002033399A (ja) | 2000-07-13 | 2002-01-31 | Toshiba Corp | 半導体集積回路及びその製造方法 |
| US6816016B2 (en) | 2000-08-10 | 2004-11-09 | Tropian, Inc. | High-efficiency modulating RF amplifier |
| US6503783B1 (en) | 2000-08-31 | 2003-01-07 | Micron Technology, Inc. | SOI CMOS device with reduced DIBL |
| US6496074B1 (en) | 2000-09-28 | 2002-12-17 | Koninklijke Philips Electronics N.V. | Cascode bootstrapped analog power amplifier circuit |
| US6978437B1 (en) | 2000-10-10 | 2005-12-20 | Toppan Photomasks, Inc. | Photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufacture with same |
| JP4434474B2 (ja) | 2000-11-29 | 2010-03-17 | Necエレクトロニクス株式会社 | Mosトランジスタの模擬試験方法 |
| US6785703B2 (en) | 2001-05-24 | 2004-08-31 | International Business Machines Corporation | Simultaneous dual rail static carry-save-adder circuit using silicon on insulator technology |
| TWI230392B (en) | 2001-06-18 | 2005-04-01 | Innovative Silicon Sa | Semiconductor device |
| US6819938B2 (en) | 2001-06-26 | 2004-11-16 | Qualcomm Incorporated | System and method for power control calibration and a wireless communication device |
| KR100906356B1 (ko) | 2001-08-10 | 2009-07-06 | 히타치 긴조쿠 가부시키가이샤 | 하이 패스 필터 |
| JP3986780B2 (ja) | 2001-08-17 | 2007-10-03 | 三菱電機株式会社 | 相補型プッシュプル増幅器 |
| US7796969B2 (en) | 2001-10-10 | 2010-09-14 | Peregrine Semiconductor Corporation | Symmetrically and asymmetrically stacked transistor group RF switch |
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| JP3813869B2 (ja) | 2001-12-20 | 2006-08-23 | 松下電器産業株式会社 | 電界効果トランジスタスイッチ回路 |
| JP3865689B2 (ja) * | 2002-01-15 | 2007-01-10 | 松下電器産業株式会社 | レベルシフト回路 |
| JP3947044B2 (ja) | 2002-05-31 | 2007-07-18 | 富士通株式会社 | 入出力バッファ |
| US6642578B1 (en) | 2002-07-22 | 2003-11-04 | Anadigics, Inc. | Linearity radio frequency switch with low control voltage |
| JP3445608B2 (ja) | 2002-10-25 | 2003-09-08 | 株式会社東芝 | 映像情報を含むデジタル情報の管理システム |
| JP2004205301A (ja) | 2002-12-25 | 2004-07-22 | Nec Corp | 評価装置及びそれに用いる回路設計方法 |
| CN1256521C (zh) | 2003-03-26 | 2006-05-17 | 浙江大学 | 变频容积调速闭式液压控制系统 |
| JP4257971B2 (ja) | 2003-03-27 | 2009-04-30 | 独立行政法人産業技術総合研究所 | 二重ゲート電界効果トランジスタのゲート信号印加方法 |
| US6930357B2 (en) | 2003-06-16 | 2005-08-16 | Infineon Technologies Ag | Active SOI structure with a body contact through an insulator |
| JP4518776B2 (ja) * | 2003-10-29 | 2010-08-04 | 三菱電機株式会社 | 高周波スイッチおよび高周波スイッチ装置 |
| JP4342970B2 (ja) | 2004-02-02 | 2009-10-14 | 株式会社東芝 | 半導体メモリ装置及びその製造方法 |
| US7042044B2 (en) | 2004-02-18 | 2006-05-09 | Koucheng Wu | Nor-type channel-program channel-erase contactless flash memory on SOI |
| US7072217B2 (en) | 2004-02-24 | 2006-07-04 | Micron Technology, Inc. | Multi-state memory cell with asymmetric charge trapping |
| US7291896B2 (en) | 2004-06-24 | 2007-11-06 | Rajendran Nair | Voltage droop suppressing active interposer |
| JP2006041232A (ja) * | 2004-07-28 | 2006-02-09 | Matsushita Electric Ind Co Ltd | 高周波回路 |
| US7319357B2 (en) | 2004-08-24 | 2008-01-15 | Texas Instruments Incorporated | System for controlling switch transistor performance |
| JP2006073627A (ja) | 2004-08-31 | 2006-03-16 | Toshiba Corp | 半導体集積装置 |
| US7158067B2 (en) | 2005-01-31 | 2007-01-02 | The United States Of America As Represented By The Secretary Of The Navy | Analog to digital converter using sawtooth voltage signals with differential comparator |
| US7402850B2 (en) | 2005-06-21 | 2008-07-22 | Micron Technology, Inc. | Back-side trapped non-volatile memory device |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| US20070023833A1 (en) | 2005-07-28 | 2007-02-01 | Serguei Okhonin | Method for reading a memory cell having an electrically floating body transistor, and memory cell and array implementing same |
| EP1914890A1 (en) | 2005-08-09 | 2008-04-23 | Hitachi Metals Precision, Ltd. | High-frequency switch circuit |
| US7265041B2 (en) | 2005-12-19 | 2007-09-04 | Micrel, Inc. | Gate layouts for transistors |
| JP4938307B2 (ja) * | 2005-12-28 | 2012-05-23 | パナソニック株式会社 | スイッチ回路、ダイオード |
| US7863691B2 (en) | 2008-03-10 | 2011-01-04 | International Business Machines Corporation | Merged field effect transistor cells for switching |
| EP2308172B1 (en) | 2008-06-13 | 2014-10-15 | Nxp B.V. | Rf switch for an rf splitter |
| US7994577B2 (en) | 2008-07-18 | 2011-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | ESD protection structures on SOI substrates |
| JP2010212801A (ja) * | 2009-03-06 | 2010-09-24 | Renesas Electronics Corp | スイッチ回路 |
| US8723260B1 (en) * | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
| US8395435B2 (en) * | 2009-07-30 | 2013-03-12 | Qualcomm, Incorporated | Switches with bias resistors for even voltage distribution |
| US8385845B1 (en) | 2009-10-09 | 2013-02-26 | Triquint Semiconductor, Inc. | Shunt device for switch |
| US9570974B2 (en) * | 2010-02-12 | 2017-02-14 | Infineon Technologies Ag | High-frequency switching circuit |
| US8970278B2 (en) * | 2010-04-27 | 2015-03-03 | Rf Micro Devices, Inc. | High power FET switch |
| US8179205B2 (en) * | 2010-05-21 | 2012-05-15 | Samsung Electro-Mechanics | Linearization systems and methods for variable attenuators |
| JP5571596B2 (ja) * | 2010-07-02 | 2014-08-13 | ルネサスエレクトロニクス株式会社 | スイッチ回路装置 |
| US20130252562A1 (en) | 2010-09-21 | 2013-09-26 | Dsp Group, Ltd. | High power high isolation low current cmos rf switch |
| US9118322B2 (en) * | 2010-10-12 | 2015-08-25 | Alpha And Omega Semiconductor (Cayman) Ltd | Low leakage dynamic bi-directional body-snatching (LLDBBS) scheme for high speed analog switches |
| US8462473B2 (en) | 2010-12-21 | 2013-06-11 | Microchip Technology Incorporated | Adaptive electrostatic discharge (ESD) protection circuit |
| US8886136B1 (en) | 2011-04-22 | 2014-11-11 | Marvell International Ltd. | Two-pin TR switch with switched capacitor |
| US20130029614A1 (en) | 2011-07-29 | 2013-01-31 | Samsung Electro-Mechanics Company | Systems, Methods, and Apparatuses for Negative-Charge-Pump-Based Antenna Switch Controllers Utilizing Battery Supplies |
| US8649137B2 (en) | 2011-10-20 | 2014-02-11 | Semiconductor Components Industries, Llc | Semiconductor device and method of forming same for ESD protection |
| US8829967B2 (en) | 2012-06-27 | 2014-09-09 | Triquint Semiconductor, Inc. | Body-contacted partially depleted silicon on insulator transistor |
| US9160328B2 (en) | 2012-07-07 | 2015-10-13 | Skyworks Solutions, Inc. | Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches |
| US8847672B2 (en) | 2013-01-15 | 2014-09-30 | Triquint Semiconductor, Inc. | Switching device with resistive divider |
| US9214932B2 (en) | 2013-02-11 | 2015-12-15 | Triquint Semiconductor, Inc. | Body-biased switching device |
| JP5575348B1 (ja) | 2014-01-20 | 2014-08-20 | 株式会社Leap | コネクタの製造方法 |
-
2013
- 2013-02-11 US US13/764,655 patent/US9214932B2/en active Active
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- 2014-02-05 JP JP2014020289A patent/JP6702646B2/ja active Active
- 2014-02-09 FR FR1450982A patent/FR3002096B1/fr not_active Expired - Fee Related
- 2014-02-10 KR KR1020140014962A patent/KR102121075B1/ko active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| FR3002096B1 (fr) | 2018-02-23 |
| IL230677A0 (en) | 2014-08-31 |
| KR20140101692A (ko) | 2014-08-20 |
| IL230677A (en) | 2017-04-30 |
| JP2014155227A (ja) | 2014-08-25 |
| JP2018191351A (ja) | 2018-11-29 |
| US9214932B2 (en) | 2015-12-15 |
| TW201433105A (zh) | 2014-08-16 |
| US20140227983A1 (en) | 2014-08-14 |
| JP6800926B2 (ja) | 2020-12-16 |
| FR3002096A1 (fr) | 2014-08-15 |
| TWI675551B (zh) | 2019-10-21 |
| KR102121075B1 (ko) | 2020-06-09 |
| CN103986449A (zh) | 2014-08-13 |
| CN103986449B (zh) | 2021-03-26 |
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