JP2014155227A - ボディバイアスされたスイッチ装置 - Google Patents
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- 230000005686 electrostatic field Effects 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electronic Switches (AREA)
Abstract
【解決手段】実施の形態は、一以上の電界効果トランジスタ(FET)104を含むスイッチ装置を提供する。実施の形態において、ボディバイアス回路124は、スイッチ電界効果トランジスタ104に印加される無線周波数信号に基づいてバイアス電圧を引き出し、バイアス電圧をスイッチ電界効果トランジスタ104のボディ端子120に供給してもよい。スイッチ装置は、無線周波数(RF)信号をスイッチするように構成されていてもよい。
【選択図】図1
Description
Claims (20)
- 無線周波数(RF)信号をスイッチするように構成される回路であって、
ソース端子、ゲート端子、ドレイン端子およびボディ端子を含む電界効果トランジスタ(FET)と、
前記ソース端子、前記ドレイン端子および前記ボディ端子に接続されるボディバイアス回路と、を備え、
前記ボディバイアス回路は、前記FETに印加されるRF信号に基づく負のバイアス電圧を引き出し、前記FETがオフ状態のときに前記負のバイアス電圧を前記ボディ端子に供給するように構成される、回路。 - 前記FETを含み、互いに直列接続される複数のFETをさらに備える、請求項1に記載の回路。
- 前記FETは、n型FETである、請求項1に記載の回路。
- 前記ボディバイアス回路は、前記ソース端子、前記ドレイン端子および前記ボディ端子のみに接続される、請求項1に記載の回路。
- 前記回路は、シリコン−オン−インシュレータ(SOI)回路を構成する、請求項1に記載の回路。
- 前記FETは、第1FETであり、
前記ボディバイアス回路は、
前記ボディ端子に接続されるノードと、
前記第1FETのソース端子に接続されるソース端子および前記ノードに接続されるドレイン端子を有する第2FETと、
前記ノードに接続されるドレイン端子および前記第1FETのドレイン端子に接続されるソース端子を有する第3FETと、
を備える、請求項1に記載の回路。 - 前記第2FETは、前記第1FETのドレイン端子に接続されるゲート端子をさらに含み、
前記第3FETは、前記第1FETのソース端子に接続されるゲート端子をさらに含む、請求項6に記載の回路。 - 前記第1FETおよび前記第2FETは、ダイオード接続FETであり、
前記第2FETは、前記ノードに接続されるゲート端子をさらに含み、
前記第3FETは、前記ノードに接続されるゲート端子をさらに含む、請求項6に記載の回路。 - 前記ボディバイアス回路は、
前記ボディ端子に接続されるノードと、
前記ソース端子および前記ノードに接続される第1ダイオードと、
前記ドレイン端子および前記ノードに接続される第2ダイオードと、
を備える、請求項1に記載の回路。 - 前記第1ダイオードは、前記ソース端子に接続されるカソード端子および前記ノードに接続されるアノード端子を含み、
前記第2ダイオードは、前記ドレイン端子に接続されるカソード端子および前記ノードに接続されるアノード端子を含む、請求項1に記載の回路。 - 前記ボディバイアス回路は、RF信号を整流するように構成されることにより、前記負のバイアス電圧を引き出すこととなる、請求項1に記載の回路。
- 送受信機と、
アンテナと、
前記送受信機および前記アンテナに接続され、前記送受信機と前記アンテナとの間の信号を通信するように構成される無線周波数(RF)フロントエンドと、を備え、
前記無線周波数フロントエンドは、シリコン−オン−インシュレータのスイッチ装置を含み、
前記スイッチ装置は、複数のスイッチ電界効果トランジスタ(FET)をオン状態またはオフ状態に設定するよう構成されるデコーダと、複数のFETからなる電界効果トランジスタ(FET)およびボディバイアス回路を持つセルと、を有し、
前記ボディバイアス回路は、前記FETがオフ状態のときに前記電界効果トランジスタのボディに負の電圧を供給するように構成され、当該負の電圧は、前記FETに印加されるRF信号から引き出される、無線通信装置。 - 前記FETは、第1FETであり、
前記ボディバイアス回路は、
前記第1FETのボディ端子に接続されるノードと、
前記第1FETのソース端子に接続されるソース端子および前記ノードに接続されるドレイン端子を有する第2FETと、
前記ノードに接続されるドレイン端子および前記第1FETのドレイン端子に接続されるソース端子を有する第3FETと、
を備える、請求項12に記載の無線通信装置。 - 前記第2FETは、前記第1FETのドレイン端子に接続されるゲート端子をさらに含み、
前記第3FETは、前記第1FETのソース端子に接続されるゲート端子をさらに含む、請求項13に記載の無線通信装置。 - デコーダ回路を用いて、スイッチ電界効果トランジスタ(FET)をオフ状態に制御し、
ボディバイアス回路を用いて、前記スイッチFETがオフ状態の間に、前記スイッチFETに印加される無線周波数(RF)信号に基づく負のバイアス電圧を引き出し、
前記ボディバイアス回路によって、前記スイッチFETがオフ状態の間に、前記負のバイアス電圧を前記スイッチFETのボディに供給する、方法。 - 前記スイッチFETに印加されるRF信号を整流し、前記負のバイアス電圧を引き出す、請求項15に記載の方法。
- 無線周波数(RF)信号をスイッチするように構成される回路であって、
ソース端子、ゲート端子、ドレイン端子およびボディ端子を含む電界効果トランジスタ(FET)と、
前記ボディ端子に接続されるノードと、前記ドレイン端子および前記ノードに接続される第1抵抗と、前記ソース端子および前記ノードに接続される第2抵抗と、を有するボディバイアス回路と、を備え、
前記ボディバイアス回路は、前記FETに印加されるRF信号に基づくバイアス電圧を引き出し、前記バイアス電圧を前記ボディ端子に供給するように構成される、回路。 - 前記第1抵抗および前記第2抵抗は、同じ大きさである、請求項17に記載の回路。
- 前記ボディバイアス回路は、前記バイアス電圧を約0Vの直流電圧として供給するように構成される、請求項17に記載の回路。
- 前記FETの前記ゲート端子はデコーダに接続され、前記FETの前記ドレイン端子は前記デコーダに接続されない、請求項17に記載の回路。
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US13/764,655 | 2013-02-11 | ||
US13/764,655 US9214932B2 (en) | 2013-02-11 | 2013-02-11 | Body-biased switching device |
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JP2018166816A Division JP6800926B2 (ja) | 2013-02-11 | 2018-09-06 | ボディバイアスされたスイッチ装置 |
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JP2014155227A true JP2014155227A (ja) | 2014-08-25 |
JP2014155227A5 JP2014155227A5 (ja) | 2017-03-16 |
JP6702646B2 JP6702646B2 (ja) | 2020-06-03 |
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US (1) | US9214932B2 (ja) |
JP (2) | JP6702646B2 (ja) |
KR (1) | KR102121075B1 (ja) |
CN (1) | CN103986449B (ja) |
FR (1) | FR3002096B1 (ja) |
IL (1) | IL230677A (ja) |
TW (1) | TWI675551B (ja) |
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JP6800926B2 (ja) | 2020-12-16 |
IL230677A (en) | 2017-04-30 |
US20140227983A1 (en) | 2014-08-14 |
JP6702646B2 (ja) | 2020-06-03 |
KR102121075B1 (ko) | 2020-06-09 |
TWI675551B (zh) | 2019-10-21 |
JP2018191351A (ja) | 2018-11-29 |
CN103986449A (zh) | 2014-08-13 |
TW201433105A (zh) | 2014-08-16 |
FR3002096A1 (fr) | 2014-08-15 |
US9214932B2 (en) | 2015-12-15 |
IL230677A0 (en) | 2014-08-31 |
CN103986449B (zh) | 2021-03-26 |
FR3002096B1 (fr) | 2018-02-23 |
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