JP6635492B1 - 基板回転装置 - Google Patents
基板回転装置 Download PDFInfo
- Publication number
- JP6635492B1 JP6635492B1 JP2019188681A JP2019188681A JP6635492B1 JP 6635492 B1 JP6635492 B1 JP 6635492B1 JP 2019188681 A JP2019188681 A JP 2019188681A JP 2019188681 A JP2019188681 A JP 2019188681A JP 6635492 B1 JP6635492 B1 JP 6635492B1
- Authority
- JP
- Japan
- Prior art keywords
- rotation
- substrate
- rotation mechanism
- rotation axis
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 121
- 230000007246 mechanism Effects 0.000 claims abstract description 79
- 238000006073 displacement reaction Methods 0.000 claims abstract description 7
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 230000033001 locomotion Effects 0.000 claims description 17
- 239000010409 thin film Substances 0.000 abstract description 28
- 238000010586 diagram Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 55
- 238000009826 distribution Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 14
- 230000008020 evaporation Effects 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
Abstract
Description
幾つかの実施形態の基板回転装置100は、誘電体膜蒸着又は結晶成長に用いられる成膜用の基板回転装置100である。基板回転装置100は、基板200上への均一な薄膜形成を支援するために、モータ110からの動力を受けて、成膜対象の基板200を公転及び自転させる。
Claims (8)
- 成膜用の基板回転装置であって、
第一の回転軸を中心に回転する主回転機構と、
前記主回転機構の回転に伴って前記第一の回転軸の周りを公転し、第二の回転軸を中心に自転する副回転機構と、
前記第一の回転軸の周囲に設けられ、前記副回転機構の公転運動を制御するガイド構造と、
を備え、
前記主回転機構が、前記副回転機構を備え、
前記第二の回転軸が前記第一の回転軸に対する径方向に変位し、
前記副回転機構は、成膜対象の基板を支持する支持構造を備え、
前記支持構造は、前記第二の回転軸を中心に回転し、
前記ガイド構造は、前記第一の回転軸に対する周方向に延びる接触面を有し、
前記ガイド構造は、前記径方向における前記第二の回転軸の変位を制御し、前記接触面と前記副回転機構とが接触するとき、前記副回転機構を前記接触面に沿った軌道で公転運動させる基板回転装置。 - 前記接触面は、前記ガイド構造が備える前記第一の回転軸を向く内周面であり、
前記内周面は、前記副回転機構の前記径方向外側への変位を規制する請求項1記載の基板回転装置。 - 前記主回転機構は、前記第一の回転軸を中心に回転する回転板を有し、
前記回転板は、前記径方向に沿うスリットを有し、
前記副回転機構は、
前記スリットを貫通する前記第二の回転軸と、
前記第二の回転軸の第一の端部に配置され、前記支持構造を有する回転台と、
前記第一の端部とは反対側の第二の端部に配置され、前記接触面上を走行する車輪と、を有し、
前記公転運動に伴って前記車輪が前記接触面上を走行している間、前記車輪と前記第二の回転軸を通じて連結された前記回転台とが自転する請求項1又は請求項2記載の基板回転装置。 - 前記副回転機構は、前記接触面に押し当てる方向に前記副回転機構を付勢するバネを介して前記主回転機構と連結される請求項1〜請求項3のいずれか一項記載の基板回転装置。
- 前記副回転機構が、楕円軌道で、前記第一の回転軸の周りを公転運動する請求項1〜請求項4のいずれか一項記載の基板回転装置。
- 前記接触面が、前記周方向において楕円形に配置される請求項5記載の基板回転装置。
- 前記接触面は、前記周方向において点対称ではない環形に配置され、
前記副回転機構は、非点対称の軌道で、前記第一の回転軸の周りを公転運動する請求項1〜請求項4のいずれか一項記載の基板回転装置。 - 前記ガイド構造は、前記接触面の少なくとも一部を前記径方向に移動させるためのスライド機構を備える請求項1〜請求項7のいずれか一項記載の基板回転装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019188681A JP6635492B1 (ja) | 2019-10-15 | 2019-10-15 | 基板回転装置 |
CN202080071635.4A CN114555856B (zh) | 2019-10-15 | 2020-03-31 | 基板旋转装置 |
DE112020005064.5T DE112020005064T5 (de) | 2019-10-15 | 2020-03-31 | Substratdreheinrichtung |
KR1020227013902A KR20220069084A (ko) | 2019-10-15 | 2020-03-31 | 기판 회전 장치 |
PCT/JP2020/014868 WO2021075074A1 (ja) | 2019-10-15 | 2020-03-31 | 基板回転装置 |
US17/768,060 US20240093358A1 (en) | 2019-10-15 | 2020-03-31 | Substrate rotating apparatus |
TW109134628A TWI739623B (zh) | 2019-10-15 | 2020-10-06 | 基板旋轉裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019188681A JP6635492B1 (ja) | 2019-10-15 | 2019-10-15 | 基板回転装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6635492B1 true JP6635492B1 (ja) | 2020-01-29 |
JP2021063266A JP2021063266A (ja) | 2021-04-22 |
Family
ID=69183649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019188681A Active JP6635492B1 (ja) | 2019-10-15 | 2019-10-15 | 基板回転装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20240093358A1 (ja) |
JP (1) | JP6635492B1 (ja) |
KR (1) | KR20220069084A (ja) |
CN (1) | CN114555856B (ja) |
DE (1) | DE112020005064T5 (ja) |
TW (1) | TWI739623B (ja) |
WO (1) | WO2021075074A1 (ja) |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3128205A (en) * | 1961-09-11 | 1964-04-07 | Optical Coating Laboratory Inc | Apparatus for vacuum coating |
JPS58132755A (ja) * | 1982-02-03 | 1983-08-08 | Toshiba Corp | アモルフアス・シリコン感光体製造方法及びその製造装置 |
US5002011A (en) * | 1987-04-14 | 1991-03-26 | Kabushiki Kaisha Toshiba | Vapor deposition apparatus |
JPH0688227A (ja) * | 1992-09-08 | 1994-03-29 | Fujitsu Ltd | 成膜装置 |
JP3412849B2 (ja) * | 1992-12-25 | 2003-06-03 | キヤノン株式会社 | 薄膜蒸着装置 |
JPH1018031A (ja) * | 1996-07-03 | 1998-01-20 | Mitsubishi Chem Corp | スパッタリング装置 |
US6457864B1 (en) * | 1998-05-14 | 2002-10-01 | Massachusetts Institute Of Technology | Omni-directional high precision friction drive positioning stage |
JP3506949B2 (ja) * | 1999-04-09 | 2004-03-15 | 松下電器産業株式会社 | 薄膜の製造方法、薄膜が形成された回転楕円体、及びこれを用いた電球と薄膜形成装置。 |
JP2000345336A (ja) * | 1999-06-04 | 2000-12-12 | Shinko Seiki Co Ltd | マグネトロンスパッタリング装置 |
US6338775B1 (en) * | 2000-08-07 | 2002-01-15 | Advanced Ion Beam Technology, Inc. | Apparatus and method for uniformly depositing thin films over substrates |
JP2004043934A (ja) * | 2002-07-15 | 2004-02-12 | Sun Tec Corp Kk | プラズマスパッタリング薄膜形成方法及び成膜装置 |
JP2006100401A (ja) * | 2004-09-28 | 2006-04-13 | Seiko Epson Corp | 配線パターン形成方法、配線パターン、電子機器 |
JP2006111952A (ja) * | 2004-10-18 | 2006-04-27 | Olympus Corp | 成膜装置 |
JP4603489B2 (ja) * | 2005-01-28 | 2010-12-22 | セイコーエプソン株式会社 | 波長可変フィルタ |
JP4835826B2 (ja) * | 2005-04-25 | 2011-12-14 | 株式会社昭和真空 | 液晶配向膜用真空蒸着装置およびその成膜方法 |
JP4721878B2 (ja) * | 2005-11-22 | 2011-07-13 | キヤノンアネルバ株式会社 | スパッタリング装置 |
KR101188863B1 (ko) * | 2009-12-23 | 2012-10-08 | 주식회사 코리아 인스트루먼트 | 챔버용 기판 이송장치 및 그 챔버 시스템 |
JP2012140648A (ja) * | 2010-12-28 | 2012-07-26 | Canon Anelva Corp | スパッタリング装置及びそのスパッタリング方法 |
KR20130052102A (ko) * | 2011-11-11 | 2013-05-22 | (주) 제이더블유테크널러지 | 박막 증착용 증발기 |
JP6000173B2 (ja) * | 2013-03-19 | 2016-09-28 | 株式会社神戸製鋼所 | Pvd処理装置及びpvd処理方法 |
TWI559440B (zh) * | 2015-01-28 | 2016-11-21 | 漢民科技股份有限公司 | 晶圓承載裝置 |
KR102599567B1 (ko) * | 2015-03-20 | 2023-11-06 | 시바우라 메카트로닉스 가부시끼가이샤 | 성막 장치 및 성막 워크 제조 방법 |
CN205329156U (zh) * | 2016-01-29 | 2016-06-22 | 郑州启航精密科技有限公司 | 滚珠离子镀膜用盘式支撑装置 |
CN107022754B (zh) * | 2016-02-02 | 2020-06-02 | 东京毅力科创株式会社 | 基板处理装置 |
CN207793417U (zh) * | 2017-12-26 | 2018-08-31 | 德淮半导体有限公司 | 磁控装置和物理气相沉积设备 |
JP2019137892A (ja) * | 2018-02-09 | 2019-08-22 | 漢民科技股▲分▼有限公司 | 成膜装置 |
JP2019188681A (ja) | 2018-04-24 | 2019-10-31 | 住友ゴム工業株式会社 | 練りゴムの熱入れ装置および熱入れ方法 |
-
2019
- 2019-10-15 JP JP2019188681A patent/JP6635492B1/ja active Active
-
2020
- 2020-03-31 KR KR1020227013902A patent/KR20220069084A/ko not_active Application Discontinuation
- 2020-03-31 DE DE112020005064.5T patent/DE112020005064T5/de active Pending
- 2020-03-31 WO PCT/JP2020/014868 patent/WO2021075074A1/ja active Application Filing
- 2020-03-31 US US17/768,060 patent/US20240093358A1/en active Pending
- 2020-03-31 CN CN202080071635.4A patent/CN114555856B/zh active Active
- 2020-10-06 TW TW109134628A patent/TWI739623B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2021075074A1 (ja) | 2021-04-22 |
CN114555856A (zh) | 2022-05-27 |
TWI739623B (zh) | 2021-09-11 |
JP2021063266A (ja) | 2021-04-22 |
DE112020005064T5 (de) | 2022-07-21 |
TW202117917A (zh) | 2021-05-01 |
US20240093358A1 (en) | 2024-03-21 |
CN114555856B (zh) | 2023-12-19 |
KR20220069084A (ko) | 2022-05-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4416940B2 (ja) | 真空チャンバ内でワークピースを制御する装置 | |
US3128205A (en) | Apparatus for vacuum coating | |
US7633070B2 (en) | Substrate processing apparatus and method | |
US4315960A (en) | Method of making a thin film | |
US3543717A (en) | Means to adjust collimator and crucible location in a vapor deposition apparatus | |
US5029555A (en) | Wafer holder method and apparatus in a vacuum deposition system | |
WO2011135810A1 (ja) | 成膜装置 | |
JP2004269988A5 (ja) | ||
US20060196423A1 (en) | Gradually changed film coating device and tool for using in the coating device | |
JPH11200017A (ja) | 光学薄膜成膜装置およびこの光学薄膜成膜装置により成膜された光学素子 | |
JP6635492B1 (ja) | 基板回転装置 | |
JP2010514167A5 (ja) | 基板プロセス装置 | |
US10658162B2 (en) | Semiconductor manufacturing apparatus | |
US6966952B2 (en) | Apparatus of depositing thin film with high uniformity | |
JP2016017219A (ja) | 蒸着装置 | |
US5288328A (en) | Apparatus for controlling a material flow emitted by a heated evaporation source and application to a vacuum evaporation coating machine | |
JP2825918B2 (ja) | 真空蒸着装置 | |
JP3412849B2 (ja) | 薄膜蒸着装置 | |
JPH02209471A (ja) | 真空蒸着装置 | |
JP2006111952A (ja) | 成膜装置 | |
JP4682311B2 (ja) | 真空成膜装置および方法 | |
JP2020122193A (ja) | 成膜装置 | |
KR100546873B1 (ko) | 기판홀더 구동장치 | |
KR20030014231A (ko) | 막형성방법, 다층막 반사경의 제조방법 및 막형성장치 | |
CN115928022B (zh) | 一种蒸镀设备、镀锅装置及镀膜方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191015 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20191015 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191126 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20191121 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191211 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6635492 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |