JP6445536B2 - 電子部品の成型および表面処理方法 - Google Patents
電子部品の成型および表面処理方法 Download PDFInfo
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- JP6445536B2 JP6445536B2 JP2016515374A JP2016515374A JP6445536B2 JP 6445536 B2 JP6445536 B2 JP 6445536B2 JP 2016515374 A JP2016515374 A JP 2016515374A JP 2016515374 A JP2016515374 A JP 2016515374A JP 6445536 B2 JP6445536 B2 JP 6445536B2
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- 238000000034 method Methods 0.000 title claims description 36
- 238000000465 moulding Methods 0.000 title claims description 22
- 238000004381 surface treatment Methods 0.000 title claims description 14
- 239000011888 foil Substances 0.000 claims description 43
- 239000003566 sealing material Substances 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000004913 activation Effects 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000001746 injection moulding Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000012778 molding material Substances 0.000 description 17
- 238000005538 encapsulation Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- KGNDCEVUMONOKF-UGPLYTSKSA-N benzyl n-[(2r)-1-[(2s,4r)-2-[[(2s)-6-amino-1-(1,3-benzoxazol-2-yl)-1,1-dihydroxyhexan-2-yl]carbamoyl]-4-[(4-methylphenyl)methoxy]pyrrolidin-1-yl]-1-oxo-4-phenylbutan-2-yl]carbamate Chemical compound C1=CC(C)=CC=C1CO[C@H]1CN(C(=O)[C@@H](CCC=2C=CC=CC=2)NC(=O)OCC=2C=CC=CC=2)[C@H](C(=O)N[C@@H](CCCCN)C(O)(O)C=2OC3=CC=CC=C3N=2)C1 KGNDCEVUMONOKF-UGPLYTSKSA-N 0.000 description 2
- 229940125833 compound 23 Drugs 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 235000012907 honey Nutrition 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/68—Release sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14754—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles being in movable or releasable engagement with the coating, e.g. bearing assemblies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
- B29C2045/14663—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame the mould cavity walls being lined with a film, e.g. release film
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14754—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles being in movable or releasable engagement with the coating, e.g. bearing assemblies
- B29C2045/1477—Removable inserts, e.g. the insert being peeled off after moulding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Description
Claims (9)
- 一連の処理ステップによる電子部品の成型及び表面処理方法であって、
A)以下の処理ステップにおいて成型される電子部品を支持するためにのみ用いられ、前記電子部品を構成するものではない担体の上に、複数の電子部品からなるグリッドを取り付けること、
B)前記電子部品における前記担体に対して反対側に位置する側面に、フォイルを配置すること、
C)前記担体上の前記フォイル被覆電子部品を型キャビティで包囲すること、
D)前記型キャビティにおける前記担体と前記フォイルの間の空間内へ圧送成型または注入成型によって封止材料をフィードすること、
E)前記型キャビティにフィードされた前記封止材料を少なくとも部分的に硬化させること、
F)前記型キャビティから、前記担体に取り付けられた部分封入済み電子部品を取り外すこと、
G)前記担体に取り付けられた部分封入電子部品から前記フォイルを取り除くこと、
H)前記担体に取り付けられた前記部品の開放側に対して、少なくとも一つの表面加工処理を施すこと、及び
I)前記担体から、部分封入及び表面処理済み電子部品を解放することからなる、前記方法。 - 処理ステップI)の後、前記部分封入及び表面処理済み電子部品が分離されることを特徴とする、請求項1に記載の方法。
- 処理ステップA)中、前記複数の電子部品からなるグリッドが、シリコン・ウェファーとして組み付けられることを特徴とする、請求項1または2に記載の方法。
- 処理ステップA)において前記複数の電子部品からなるグリッドが取り付けられる前記担体が、平坦な担体プレート、もしくは平坦な金属プレートからなることを特徴とする、請求項1または2に記載の方法。
- 処理ステップD)中に前記型キャビティにおける前記担体と前記フォイルの間の空間内へフィードされる前記封止材料が、液体であり、1〜5Pa.sの粘度を有することを特徴とする、請求項1または2に記載の方法。
- 前記型キャビティから、前記担体に取り付けられた部分封入済み電子部品を取り外す処理ステップF)が、処理ステップG)による前記担体に取り付けられた部分封入済み電子部品からの前記フォイルの除去と同時に実行されることを特徴とする、請求項1または2に記載の方法。
- 処理ステップG)中、前記電子部品から前記フォイルを取り除くために前記フォイルが加熱されることを特徴とする、請求項1または2に記載の方法。
- 処理ステップH)による前記部品の開放側に施される少なくとも一つの表面加工処理が、リソグラフィー、エッチング、照射、刷り込み、レーザ活性化、メッキの群から選択されることを特徴とする、請求項1または2に記載の方法。
- 処理ステップH)による前記部品の開放側に施される少なくとも一つの表面加工処理が、前記電子部品から前記封止材表面への導電結合部を設ける処理であることを特徴とする、請求項1または2に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL2011512A NL2011512C2 (en) | 2013-09-26 | 2013-09-26 | Method for moulding and surface processing electronic components and electronic component produced with this method. |
NL2011512 | 2013-09-26 | ||
PCT/NL2014/050658 WO2015047089A1 (en) | 2013-09-26 | 2014-09-26 | Method for moulding and surface processing electronic components and electronic component produced with this method |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016534543A JP2016534543A (ja) | 2016-11-04 |
JP2016534543A5 JP2016534543A5 (ja) | 2018-05-24 |
JP6445536B2 true JP6445536B2 (ja) | 2018-12-26 |
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Application Number | Title | Priority Date | Filing Date |
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JP2016515374A Active JP6445536B2 (ja) | 2013-09-26 | 2014-09-26 | 電子部品の成型および表面処理方法 |
Country Status (12)
Country | Link |
---|---|
US (1) | US9831105B2 (ja) |
JP (1) | JP6445536B2 (ja) |
KR (1) | KR102125263B1 (ja) |
CN (1) | CN105531806B (ja) |
DE (1) | DE112014004450B4 (ja) |
MY (1) | MY174762A (ja) |
NL (1) | NL2011512C2 (ja) |
PH (1) | PH12016500468A1 (ja) |
PT (1) | PT2015047089B (ja) |
SG (1) | SG11201601604UA (ja) |
TW (1) | TWI581344B (ja) |
WO (1) | WO2015047089A1 (ja) |
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NL9400119A (nl) * | 1994-01-27 | 1995-09-01 | 3P Licensing Bv | Werkwijze voor het met een hardende kunststof omhullen van een electronische component, electronische componenten met kunststofomhulling verkregen door middel van deze werkwijze en matrijs voor het uitvoeren der werkwijze. |
EP0742586A3 (en) * | 1995-05-02 | 1998-03-11 | Texas Instruments Incorporated | Improvements in or relating to integrated circuits |
JP3139981B2 (ja) * | 1996-07-23 | 2001-03-05 | アピックヤマダ株式会社 | チップサイズパッケージの樹脂封止方法及び樹脂封止装置 |
JP3455667B2 (ja) * | 1997-02-03 | 2003-10-14 | 株式会社東芝 | 樹脂封止型半導体装置の製造方法および樹脂封止型半導体装置 |
JPH11121488A (ja) * | 1997-10-15 | 1999-04-30 | Toshiba Corp | 半導体装置の製造方法及び樹脂封止装置 |
JP3494586B2 (ja) | 1999-03-26 | 2004-02-09 | アピックヤマダ株式会社 | 樹脂封止装置及び樹脂封止方法 |
EP1085566A1 (en) | 1999-09-16 | 2001-03-21 | "3P" Licensing B.V. | Method and apparatus for partially encapsulating semiconductor chips |
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KR20160064122A (ko) | 2016-06-07 |
TW201519330A (zh) | 2015-05-16 |
PT2015047089B (pt) | 2021-08-26 |
CN105531806B (zh) | 2019-07-30 |
KR102125263B1 (ko) | 2020-06-24 |
MY174762A (en) | 2020-05-13 |
CN105531806A (zh) | 2016-04-27 |
PH12016500468B1 (en) | 2016-05-16 |
DE112014004450T5 (de) | 2016-07-07 |
JP2016534543A (ja) | 2016-11-04 |
WO2015047089A1 (en) | 2015-04-02 |
US20160240397A1 (en) | 2016-08-18 |
PH12016500468A1 (en) | 2016-05-16 |
DE112014004450B4 (de) | 2024-05-02 |
US9831105B2 (en) | 2017-11-28 |
TWI581344B (zh) | 2017-05-01 |
NL2011512C2 (en) | 2015-03-30 |
SG11201601604UA (en) | 2016-04-28 |
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