JP2008277325A - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】端面にスルーホールを有し、スルーホール内に形成された配線部と導通する配線パターンを少なくとも一方の面に有する方形の基板の面に半導体素子を搭載固定し、半導体素子の電極を配線パターンに電気的に接続し、半導体素子を有する基板の面を樹脂で被覆した半導体装置において、スルーホールは、基板面に配線部と導通する0.02mm以上の幅のスルーホールランドを有し、配線部及びスルーホールランドが露出している。
【選択図】図1i
Description
端面にスルーホールを有し、前記スルーホール内に形成された配線部と導通する配線パターンを少なくとも一方の面に有する方形の基板の面に半導体素子を搭載固定し、前記半導体素子の電極を前記配線パターンに電気的に接続し、前記半導体素子を有する前記基板の面を樹脂で被覆した半導体装置において、
前記スルーホールは、前記基板面に前記配線部と導通する0.02mm以上の幅のスルーホールランドを有し、前記配線部及び前記スルーホールランドが露出していることを特徴とする。
スルーホールを有し、前記スルーホール内に形成された配線部と導通する配線パターンを少なくとも一方の面に有する基板の面に複数の半導体素子を縦横列に搭載固定し、前記半導体素子の電極と基板の前記配線パターンとを電気的に接続した半導体装置の集合体を相対向する上金型と下金型の間に挿入する工程と、
上金型と下金型を型締めする工程と、
前記半導体素子を収納する、前記上金型と下金型のキャビティ内に樹脂を注入し、樹脂を硬化する工程と、
型開きをして樹脂封止された半導体装置の集合体を取り出す工程と、
前記基板のスルーホール部を切断して個々の半導体装置にする工程を、少なくとも有する半導体装置の製造方法において、
前記スルーホールは、前記基板面に前記配線部と導通する0.02mm以上の幅のスルーホールランドを有し、前記上金型又は下金型の凸部は、前記スルーホールに対して前記スルーホールランドの幅を含んだ以上の領域を押圧し、前記樹脂が前記スルーホールへ流入しないようにしたことを特徴とする。
本発明の半導体装置の製造方法の骨子は、型内に基板を配して樹脂でモールド成形するに際し、基板のスルーホール上を型で塞ぐことによってスルーホールが設けられた箇所以外に樹脂コートすることである。
図1a〜図1iを用いて、本発明の第1の実施形態について説明する。図1a〜図1iは第1の実施形態を示す製造プロセスの骨子を順次説明するための斜視図又は断面図を示している。
第2の実施形態を図2a、図2bに示す。図2aは製造途中の半導体装置の斜視図であり、図2bは半導体装置の斜視図である。
第3の実施形態を図3a〜図3dに示す。図3a〜図3cは製造途中の半導体部材及び半導体装置の断面図であり、図3dは半導体装置の断面図である。
2…スルーホール
3…配線パターン
4,31…半導体素子
5…金線
6…半導体部材
7…スルーホールランド
10…上金型
11,32…下金型
12…リリースフィルム
13…キャビティ
14…凸部
15…樹脂
16…スルーホールの中央
17,18…端面
19…半導体装置
20…ゲート
Claims (8)
- 端面にスルーホールを有し、前記スルーホール内に形成された配線部と導通する配線パターンを少なくとも一方の面に有する方形の基板の面に半導体素子を搭載固定し、前記半導体素子の電極を前記配線パターンに電気的に接続し、前記半導体素子を有する前記基板の面を樹脂で被覆した半導体装置において、
前記スルーホールは、前記基板面に前記配線部と導通する0.02mm以上の幅のスルーホールランドを有し、前記配線部及び前記スルーホールランドが露出していることを特徴とする半導体装置。 - 前記樹脂は、前記スルーホールを有していない前記基板の端面と同一平面内に端面を有することを特徴とする請求項1に記載の半導体装置。
- 前記樹脂は光透過性樹脂であり、前記半導体素子は光電変換素子であることを特徴とする請求項1ないし2に記載の半導体装置。
- 前記半導体素子を被覆する前記樹脂の上面は、平坦であることを特徴とする請求項1ないし3に記載の半導体装置。
- スルーホールを有し、前記スルーホール内に形成された配線部と導通する配線パターンを少なくとも一方の面に有する基板の面に複数の半導体素子を縦横列に搭載固定し、前記半導体素子の電極と前記配線パターンとを電気的に接続した半導体装置の集合体を相対向する上金型と下金型の間に挿入する工程と、
上金型と下金型を型締めする工程と、
前記半導体素子を収納する、前記上金型と下金型のキャビティ内に樹脂を注入し、樹脂を硬化する工程と、
型開きをして樹脂封止された半導体装置の集合体を取り出す工程と、
前記基板のスルーホール部を切断して個々の半導体装置にする工程を、少なくとも有する半導体装置の製造方法において、
前記スルーホールは、前記基板面に前記配線部と導通する0.02mm以上の幅のスルーホールランドを有し、前記上金型又は下金型の凸部は、前記スルーホールに対して前記スルーホールランドの幅を含んだ以上の領域を押圧し、前記樹脂が前記スルーホールへ流入しないようにしたことを特徴とする半導体装置の製造方法。 - 前記上金型又は下金型のキャビティは複数列になっており、1列のキャビティが複数の半導体素子に対応していることを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記1列のキャビティは複数のキャビティ同士が互いに接触し、その接触部にゲートを有するように直列に配列して形成し、前記ゲートから樹脂を注入して前記複数のキャビティのそれぞれに前記各ゲートから樹脂を順次注入して行くことを特徴とする請求項6に記載の半導体装置の製造方法。
- 前記樹脂と前記上金型又は下金型のキャビティの面にリリースフィルムを挿入し、前記各金型が前記リリースフィルムを介して前記スルーホールを押圧しスルーホールへの樹脂の流入を避けることを特徴とする請求項5ないし7に記載の半導体装置の製造方法。
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JP2007115616A JP2008277325A (ja) | 2007-04-25 | 2007-04-25 | 半導体装置及び半導体装置の製造方法 |
US12/061,097 US7821121B2 (en) | 2007-04-25 | 2008-04-02 | Semiconductor device and method for producing the same |
CN200810093545A CN100585845C (zh) | 2007-04-25 | 2008-04-25 | 半导体装置制造方法 |
US12/881,616 US8129273B2 (en) | 2007-04-25 | 2010-09-14 | Semiconductor device and method for producing the same |
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US7821121B2 (en) | 2010-10-26 |
CN100585845C (zh) | 2010-01-27 |
US20080265355A1 (en) | 2008-10-30 |
US20100330725A1 (en) | 2010-12-30 |
CN101295694A (zh) | 2008-10-29 |
US8129273B2 (en) | 2012-03-06 |
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