JP6182916B2 - 発光装置の封止部材の取り外し方法 - Google Patents
発光装置の封止部材の取り外し方法 Download PDFInfo
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- 229910052736 halogen Inorganic materials 0.000 description 1
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
基板は、発光素子が実装される部材である。
発光素子としては、半導体発光素子(例えばLED)を用いることができる。半導体発光素子は、基板上にInN、AlN、GaN、InGaN、AlGaN、InGaAlN等の窒化物半導体、III−V族化合物半導体、II−VI族化合物半導体等の半導体層を積層した積層構造体から構成されている。発光素子の基板としては、サファイア等の絶縁性基板や、SiC、GaN、GaAs等の導電性基板等が挙げられる。
発光素子がフリップチップ実装される場合には、サファイアやSiC等透光性を有する基板を用いることが好ましい。また、基板と発光素子の間に、樹脂等のアンダーフィル208,308を設けることもできる。
本発明の発光素子は、接合部材を用いて基板ないし基板上の配線に実装される。
封止部材は、発光素子を封止する部材である。
本発明の発光装置においては、基板と封止部材との間に、剥離層、または、空気層が設けられている。これにより、封止部材を容易に取り外すことが可能となる。
例えば、図3に示すように、発光素子や接合部材等を封止部材によって被覆し、その部分の外側に空気層を設けることができる。
空気層を用いる場合には、新たな部材を基板上に設けることなく、封止部材の取り外しが容易な発光装置とできるほか、取り外した封止部材が基板上に残りにくいため、再封止が容易となり、好ましい。
なお、本発明の発光装置は、空気層と剥離層の両方を備えるよう構成されてもよい。これにより、封止部材をより容易に剥離することができるとともに、発光装置の信頼性を高めることができる。例えば、封止部材の発光素子や接合部材を被覆した部分の下方に剥離層を設け、剥離層の外側の封止部材の下方に空気層を設けることができる。また例えば、基板上に発光素子を取り囲むように空気層を設け、空気層の周囲の基板上に封止部材と接する剥離層を設けることができる。
封止部材の取り外し方法は、特に限定されず、封止部材の上面を吸着し引き上げる、封止部材の側面に水平に荷重を加える、基板が可撓性を有する場合には基板を曲げる、等の手段があげられる。
封止部材が取り外された後、必要に応じて、封止部材が設けられていた場所に、新たに封止部材を設ける(再封止する)ことができる。また、発光素子も同時に取り外された場合には、取り外した発光素子が設けられていた場所又はその近傍に発光素子を実装し、さらに封止部材を設けることができる。これにより、不良の封止部材または発光素子を容易に良品に交換することができ、発光装置を廃棄することなく利用することができるため、廃棄物の削減やコストを低減することが可能となる。
本実施例の発光装置110は、褐色のポリイミドフィルム101a上に、一対の銅の配線101bと、該配線が一部露出するように設けられるシリコーン樹脂に酸化チタンが含有された白色レジスト101cとが順に設けられた基板101と、基板の配線上にフリップチップ実装されるサファイア基板を有する窒化ガリウム系発光素子102と、基板101と発光素子102とを接合する接合部材であるSn−Cu系の半田103と、発光素子102を封止する、透光性のシリコーン樹脂にYAG蛍光体が含有された封止部材104とを備え、基板101と封止部材104との間の全面に、剥離層である厚み25μmのフッ素樹脂層105が設けられている。ここで、フッ素樹脂層105は、封止部材104と基板101との密着性よりも封止部材104との密着性が低い。
本実施例の発光装置210は、アルミナの板上に一対の銀の配線が設けられ、該配線上の発光素子との接合部のみに金の鍍金が施された基板201と、フリップチップ実装される発光素子202と、基板201の配線上に発光素子202を接合する接合部材である組成比が略1:9であるAu−Sn系の半田203と、発光素子202と基板201との間を充填するよう設けられたアンダーフィル208と、発光素子202を封止する透光性のエポキシ樹脂からなる封止部材204とを備え、基板201と封止部材204との間に空気層206が設けられている。
101、201、301、401 基板
102、202、302、402 発光素子
103、203、303、403 接合部材
104、204、304、404 封止部材
105 剥離層
206、306、406 空気層
107 吸着ノズル
207 ジグ
208、308 アンダーフィル
Claims (6)
- 基板と、
前記基板上に実装される発光素子と、
前記発光素子を封止する封止部材と、を備える発光装置の封止部材の取り外し方法であって、
前記基板と前記封止部材との間に剥離層を有し、
前記剥離層は前記封止部材の下面全域に設けられ、
前記剥離層において、前記封止部材を前記基板から取り外す工程を有する、
発光装置の封止部材の取り外し方法。 - 前記剥離層と前記封止部材との界面で前記封止部材が剥離されることを特徴とする、請求項1に記載の発光装置の封止部材の取り外し方法。
- 前記剥離層と前記基板との界面で前記封止部材が剥離されることを特徴とする、請求項1に記載の発光装置の封止部材の取り外し方法。
- 基板と、
前記基板上に実装される発光素子と、
前記発光素子を封止する封止部材と、を備える発光装置の封止部材の取り外し方法であって、
前記基板と前記封止部材との間には空気層が設けられており、
前記空気層において、前記封止部材を前記基板から取り外す工程を有する、
発光装置の封止部材の取り外し方法。 - 前記発光装置は、前記基板または前記基板上の配線と前記発光素子とを接合する接合部材を備え、
前記封止部材を前記基板から取り外す工程において、前記接合部材を溶融させ、前記溶融させた状態で前記封止部材を前記基板から取り外す、
請求項1から4のいずれか1項に記載の発光装置の封止部材の取り外し方法。 - 前記接合部材は半田である請求項5に記載の発光装置の封止部材の取り外し方法。
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JP2013053451A JP6182916B2 (ja) | 2013-03-15 | 2013-03-15 | 発光装置の封止部材の取り外し方法 |
US14/211,400 US9472715B2 (en) | 2013-03-15 | 2014-03-14 | Method of detaching sealing member of light emitting device |
US15/270,874 US9755121B2 (en) | 2013-03-15 | 2016-09-20 | Method of detaching sealing member of light emitting device |
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JP2014179520A JP2014179520A (ja) | 2014-09-25 |
JP2014179520A5 JP2014179520A5 (ja) | 2016-04-21 |
JP6182916B2 true JP6182916B2 (ja) | 2017-08-23 |
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TWI610411B (zh) * | 2014-08-14 | 2018-01-01 | 艾馬克科技公司 | 用於半導體晶粒互連的雷射輔助接合 |
JP6044745B2 (ja) * | 2014-09-03 | 2016-12-14 | 株式会社村田製作所 | モジュール部品 |
JP2016122815A (ja) * | 2014-12-25 | 2016-07-07 | 大日本印刷株式会社 | Led素子用基板 |
WO2016104609A1 (ja) * | 2014-12-25 | 2016-06-30 | 大日本印刷株式会社 | Led素子用基板、led実装モジュール、及び、それらを用いたled表示装置 |
JP6432343B2 (ja) | 2014-12-26 | 2018-12-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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