JP6366398B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6366398B2 JP6366398B2 JP2014148491A JP2014148491A JP6366398B2 JP 6366398 B2 JP6366398 B2 JP 6366398B2 JP 2014148491 A JP2014148491 A JP 2014148491A JP 2014148491 A JP2014148491 A JP 2014148491A JP 6366398 B2 JP6366398 B2 JP 6366398B2
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- Prior art keywords
- oxide semiconductor
- film
- semiconductor film
- transistor
- insulating film
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/467—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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Description
本実施の形態では、本発明の一態様の半導体装置について図面を用いて説明する。
本実施の形態では、実施の形態1で説明した図1に示すトランジスタ450の作製方法について、図13乃至図15を用いて説明する。
本実施の形態では、実施の形態1で説明したトランジスタとは異なる構造のトランジスタについて説明する。
本実施の形態では、実施の形態3で説明した図17に示すトランジスタ550の作製方法について、図19乃至図21を用いて説明する。
本実施の形態では、先の実施の形態で説明したトランジスタとは異なる構造のトランジスタについて説明する。
本実施の形態では、実施の形態5で説明した図22に示すトランジスタ350の作製方法について、図33乃至図35を用いて説明する。
本実施の形態では、先の実施の形態で説明したトランジスタとは異なる構造のトランジスタについて説明する。
本実施の形態では、実施の形態7で説明した図36に示すトランジスタ340の作製方法について、図37乃至図39を用いて説明する。
本実施の形態では、本発明の一態様の半導体装置について図面を用いて説明する。
本実施の形態では、実施の形態9で説明した図40に示すトランジスタ250の作製方法について、図51乃至図53を用いて説明する。
本実施の形態では、先の実施の形態で説明したトランジスタとは異なる構造のトランジスタについて説明する。
本実施の形態では、実施の形態11で説明した図54に示すトランジスタ240の作製方法について、図56および図57を用いて説明する。
本実施の形態では、本発明の一態様のトランジスタを利用した回路の一例について、図面を参照して説明する。
本実施の形態では、本発明の一態様であるトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置(記憶装置)の一例を、図面を用いて説明する。
本実施の形態では、先の実施の形態で説明したトランジスタを用いることができ、先の実施の形態で説明した記憶装置を含むCPUについて説明する。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図66に示す。
102 電子捕獲層
102a 第1の絶縁膜
102b 第2の絶縁膜
102c 第3の絶縁膜
103 ゲート電極
106 電子捕獲準位
107 電子
108 曲線
109 曲線
110 トランジスタ
111 容量素子
240 トランジスタ
250 トランジスタ
260 トランジスタ
270 トランジスタ
280 トランジスタ
290 トランジスタ
295 トランジスタ
340 トランジスタ
350 トランジスタ
360 トランジスタ
370 トランジスタ
380 トランジスタ
390 トランジスタ
395 トランジスタ
400 基板
401 導電膜
402 下地絶縁膜
403c 第3の酸化物半導体膜
404 多層膜
404a 第1の酸化物半導体膜
404b 第2の酸化物半導体膜
404c 第3の酸化物半導体膜
405 導電膜
406 導電膜
406a ソース電極
406b ドレイン電極
407 絶縁膜
408 ゲート絶縁膜
409 導電膜
410 ゲート電極
412 酸化物絶縁膜
413 絶縁膜
414 絶縁膜
414a 絶縁膜
414b 絶縁膜
450 トランジスタ
460 トランジスタ
470 トランジスタ
480 トランジスタ
490 トランジスタ
495 トランジスタ
501 絶縁膜
502 絶縁膜
502a 絶縁膜
502b 絶縁膜
502c 絶縁膜
504 多層膜
504c 第3の酸化物半導体膜
511 下地絶縁膜
512a 第1の配線
512b 第2の配線
513a 下地絶縁膜
513b 下地絶縁膜
514 下地絶縁膜
516a ソース電極
516b ドレイン電極
550 トランジスタ
602 フォトダイオード
640 トランジスタ
656 トランジスタ
658 フォトダイオードリセット信号線
659 ゲート信号線
672 フォトセンサ基準信号線
700 記憶素子
701 回路
702 回路
703 スイッチ
704 スイッチ
706 論理素子
707 容量素子
708 容量素子
709 トランジスタ
710 トランジスタ
713 トランジスタ
714 トランジスタ
720 回路
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 第1の筐体
912 第2の筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 冷蔵室用扉
933 冷凍室用扉
941 第1の筐体
942 第2の筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
2200 トランジスタ
2201 絶縁膜
2202 配線
2203 プラグ
2204 絶縁膜
2205 配線
2206 配線
3001 第1の配線
3002 第2の配線
3003 配線
3004 配線
3005 配線
3200 トランジスタ
3300 トランジスタ
3400 容量素子
Claims (5)
- 第1の絶縁膜と、
前記第1の絶縁膜上の第1の酸化物半導体膜と、
前記第1の酸化物半導体膜上の第2の酸化物半導体膜と、
前記第1の絶縁膜上の第1の導電膜および第2の導電膜と、
前記第2の酸化物半導体膜上、前記第1の導電膜上および第2の導電膜上の第3の酸化物半導体膜と、
前記第3の酸化物半導体膜上の第2の絶縁膜と、
前記第2の絶縁膜上の第3の導電膜と、を有し、
前記第2の酸化物半導体膜は、チャネル形成領域を有し、
前記第1の導電膜および前記第2の導電膜のそれぞれは、前記第2の酸化物半導体膜の第1の側面及び前記第1の側面に対向する第2の側面と接し、且つ前記第2の酸化物半導体膜の上面とは接せず、
前記第3の導電膜は、前記第2の酸化物半導体膜の前記第1の側面及び前記第2の側面とは対抗しない第3の側面及び第4の側面に面しており、
前記第3の酸化物半導体膜及び前記第2の絶縁膜の形状は、前記第3の導電膜の形状と同じであることを特徴とする半導体装置。 - 請求項1において、
前記第3の酸化物半導体膜は、前記第2の酸化物半導体膜の前記第3の側面及び前記第4の側面に接することを特徴とする半導体装置。 - 請求項1又は請求項2において、
前記第2の酸化物半導体膜の上面の全部が、前記第3の酸化物半導体膜と接することを特徴とする半導体装置。 - 請求項1乃至3のいずれか一において、
チャネル長方向において、前記第3の酸化物半導体膜の長さが、前記第1の酸化物半導体膜および前記第2の酸化物半導体膜のそれぞれの長さよりも大きいことを特徴とする半導体装置。 - 請求項1乃至4のいずれか一において、
前記第3の酸化物半導体膜は、インジウム、ガリウム、および亜鉛を含むことを特徴とする半導体装置。
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JP2015053477A (ja) | 2013-08-05 | 2015-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
US9590109B2 (en) * | 2013-08-30 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI646690B (zh) | 2013-09-13 | 2019-01-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
KR102183763B1 (ko) | 2013-10-11 | 2020-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US9882014B2 (en) | 2013-11-29 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI721409B (zh) | 2013-12-19 | 2021-03-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
JP6488124B2 (ja) | 2013-12-27 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9780226B2 (en) | 2014-04-25 | 2017-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6537341B2 (ja) * | 2014-05-07 | 2019-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI663726B (zh) | 2014-05-30 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置、模組及電子裝置 |
WO2016092427A1 (en) | 2014-12-10 | 2016-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9653613B2 (en) * | 2015-02-27 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6683503B2 (ja) * | 2015-03-03 | 2020-04-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6705663B2 (ja) * | 2015-03-06 | 2020-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
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2014
- 2014-07-14 TW TW103124132A patent/TWI632688B/zh not_active IP Right Cessation
- 2014-07-18 KR KR20140091283A patent/KR20150013031A/ko not_active Application Discontinuation
- 2014-07-22 JP JP2014148491A patent/JP6366398B2/ja not_active Expired - Fee Related
- 2014-07-22 US US14/337,835 patent/US9761736B2/en not_active Expired - Fee Related
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US9761736B2 (en) | 2017-09-12 |
TW201519449A (zh) | 2015-05-16 |
TWI632688B (zh) | 2018-08-11 |
US20150028330A1 (en) | 2015-01-29 |
KR20150013031A (ko) | 2015-02-04 |
JP2015043415A (ja) | 2015-03-05 |
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