JP6355311B2 - 固体撮像装置、その製造方法及び撮像システム - Google Patents

固体撮像装置、その製造方法及び撮像システム Download PDF

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Publication number
JP6355311B2
JP6355311B2 JP2013210588A JP2013210588A JP6355311B2 JP 6355311 B2 JP6355311 B2 JP 6355311B2 JP 2013210588 A JP2013210588 A JP 2013210588A JP 2013210588 A JP2013210588 A JP 2013210588A JP 6355311 B2 JP6355311 B2 JP 6355311B2
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semiconductor region
region
solid
imaging device
state imaging
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Japanese (ja)
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JP2015076453A5 (enExample
JP2015076453A (ja
Inventor
森山　孝志
孝志 森山
雅章 箕輪
雅章 箕輪
市川　武史
武史 市川
昌洋 小川
昌洋 小川
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Canon Inc
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Canon Inc
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Priority to JP2013210588A priority Critical patent/JP6355311B2/ja
Priority to EP14184612.1A priority patent/EP2866260B1/en
Priority to US14/489,812 priority patent/US9761618B2/en
Priority to CN201410499673.6A priority patent/CN104517983B/zh
Priority to RU2014139258/28A priority patent/RU2589519C2/ru
Publication of JP2015076453A publication Critical patent/JP2015076453A/ja
Publication of JP2015076453A5 publication Critical patent/JP2015076453A5/ja
Priority to US15/637,155 priority patent/US9947702B2/en
Priority to US15/908,997 priority patent/US10217780B2/en
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/63—Control of cameras or camera modules by using electronic viewfinders
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/222—Studio circuitry; Studio devices; Studio equipment
    • H04N5/262—Studio circuits, e.g. for mixing, switching-over, change of character of image, other special effects ; Cameras specially adapted for the electronic generation of special effects
    • H04N5/265—Mixing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013210588A 2013-10-07 2013-10-07 固体撮像装置、その製造方法及び撮像システム Active JP6355311B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2013210588A JP6355311B2 (ja) 2013-10-07 2013-10-07 固体撮像装置、その製造方法及び撮像システム
EP14184612.1A EP2866260B1 (en) 2013-10-07 2014-09-12 Solid-state imaging apparatus, method for manufacturing the same, and imaging system
US14/489,812 US9761618B2 (en) 2013-10-07 2014-09-18 Solid-state imaging apparatus, method for manufacturing the same, and imaging system
CN201410499673.6A CN104517983B (zh) 2013-10-07 2014-09-26 固态成像装置、其制造方法和成像系统
RU2014139258/28A RU2589519C2 (ru) 2013-10-07 2014-09-29 Твердотельное устройство формирования изображения, способ изготовления этого устройства и система формирования изображения
US15/637,155 US9947702B2 (en) 2013-10-07 2017-06-29 Solid-state imaging apparatus, method for manufacturing the same, and imaging system
US15/908,997 US10217780B2 (en) 2013-10-07 2018-03-01 Solid-state imaging apparatus, method for manufacturing the same, and imaging system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013210588A JP6355311B2 (ja) 2013-10-07 2013-10-07 固体撮像装置、その製造方法及び撮像システム

Related Child Applications (1)

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JP2018107831A Division JP2018139328A (ja) 2018-06-05 2018-06-05 固体撮像装置および撮像システム

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JP2015076453A JP2015076453A (ja) 2015-04-20
JP2015076453A5 JP2015076453A5 (enExample) 2016-08-18
JP6355311B2 true JP6355311B2 (ja) 2018-07-11

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US (3) US9761618B2 (enExample)
EP (1) EP2866260B1 (enExample)
JP (1) JP6355311B2 (enExample)
CN (1) CN104517983B (enExample)
RU (1) RU2589519C2 (enExample)

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JP6595750B2 (ja) 2014-03-14 2019-10-23 キヤノン株式会社 固体撮像装置及び撮像システム
JP6274567B2 (ja) 2014-03-14 2018-02-07 キヤノン株式会社 固体撮像装置及び撮像システム
JP6579774B2 (ja) * 2015-03-30 2019-09-25 キヤノン株式会社 固体撮像装置およびカメラ
US9900539B2 (en) 2015-09-10 2018-02-20 Canon Kabushiki Kaisha Solid-state image pickup element, and image pickup system
US10205894B2 (en) 2015-09-11 2019-02-12 Canon Kabushiki Kaisha Imaging device and imaging system
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JP6570384B2 (ja) 2015-09-11 2019-09-04 キヤノン株式会社 撮像装置及び撮像システム
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JP6862129B2 (ja) * 2016-08-29 2021-04-21 キヤノン株式会社 光電変換装置および撮像システム
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Also Published As

Publication number Publication date
RU2589519C2 (ru) 2016-07-10
EP2866260B1 (en) 2019-02-06
EP2866260A2 (en) 2015-04-29
CN104517983B (zh) 2018-01-05
US20170317121A1 (en) 2017-11-02
US20160027825A1 (en) 2016-01-28
CN104517983A (zh) 2015-04-15
US20180261637A1 (en) 2018-09-13
US9761618B2 (en) 2017-09-12
EP2866260A3 (en) 2015-08-26
US9947702B2 (en) 2018-04-17
RU2014139258A (ru) 2016-04-20
JP2015076453A (ja) 2015-04-20
US10217780B2 (en) 2019-02-26

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