TWI451564B - 具有二磊晶層之影像感測器及其製造方法 - Google Patents
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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Description
本發明一般關於影像感測器領域,且更明確言之係關於一種具有兩層磊晶層以減輕串擾的影像感測器。
串擾會在一光生載子(例如,一電子)越過一光二極體下之空乏區域或其他光敏區域而產生時發生,而該電子會擴散及/或漂移開並由其他光二極體或其他光敏區域所收集。為清楚起見,將以光二極體為例並假設該影像感測器為一像素陣列。因電子而發生之串擾減弱調變轉換功能並使顏色混合。因此,需要減輕及/或消除此串擾。
許多以電荷耦合裝置(CCD)為基礎之影像感測器係於一n型矽基板晶圓上製造成一n-磊晶矽層。此等成像器通常會利用一垂直溢漏,以防止越過該垂直溢漏而產生之電子到達該等光二極體。其他影像感測器係於一重度摻雜p型矽基板上建構成一p-磊晶矽層。此等p/p+晶圓因CMOS電路之矽鑄造而受到偏愛。因此,CMOS影像感測器通常係製成p/p+晶圓以利用主流CMOS程序與電路。製成p/p+晶圓之成像器缺少該垂直溢漏,因而有嘗試過其他方法。例如,美國專利案第5,859,462號(讓渡予Eastman Kodak公司)教導許多串擾減輕方案。目前,由於影像感測器消費者不斷地要求再將串擾減輕更多,故而需要新的方法。於CMOS鑄造上p/p+晶圓已嘗試過多種方法,然而截至目前為止仍無任何方法完全有效。Dongbu Electronics於美國專
利案6,897,500中聲稱以一隔離層環繞每一像素來減輕串擾。此一結構會消耗矽之面積且難以縮放至較小像素。Thomson-CSF已取得一種針對抗模糊而非串擾之圖案化副集電器方法的專利權(美國專利案4,916,501與4,997,784)。此方法並不如此處所提出之方法有效,且(事實上)部分副集電器會促使電子擴散至其他像素。美國專利案6,225,670建議一種涉及電位阻障與側流的方法。
本發明可減少源自一光二極體並擴散及/或漂移至另一光二極體之光生電子的數量。此可減輕串擾。本發明在一p+矽基板上之一p型磊晶矽層中引入一埋置n-摻雜區域。使所得之pn接面接觸並且加偏壓。引入n型摻雜物之後,於第一p-磊晶層上沈積一第二p型磊晶矽層。該pn接面會收集擴散電子並防止其到達其他光二極體。對該埋置n-區域之接點構造係於第二p-磊晶層內。該等CMOS電路係建構於該p-磊晶/p-磊晶/p+基板中(即,不含該埋置n-區域之區域),因此該晶圓適合由一鑄造所提供之標準CMOS。此外,此可利用p/p+基板之極佳除氣能力來降低裝置區域中的金屬濃度。該除氣能力可降低暗電流與點缺陷。
本發明係關於克服上面提出的一或多個問題。簡單概括,根據本發明之一態樣,本發明屬於一種影像感測器,其包含(a)一第一導電率類型之基板,其具有一含複數個光敏部位的影像區,其中於像素中收集回應光而產生之電荷的一部分;以及(b)一跨越該影像區之第二導電率副集電
器,其收集所產生電荷之另一部分,不然的話有可能會擴散至鄰近的光敏區域。
參考附圖閱讀以下對較佳具體實施例之詳細說明及隨附申請專利範圍,可更清楚瞭解並明白本發明之該等及其他態樣、目的、特徵及優點。
本發明具有以下於一影像感測器中減輕串擾的優點。
詳細討論本發明之前,值得注意的是本發明較佳地係用於(但並非限於)一CMOS主動像素感測器中。主動像素感測器指像素內之一主動電元件,而非作為切換器之電晶體。例如,放大器係一主動元件。CMOS指互補金屬氧化物矽型電組件,如與像素相關聯,但通常不在該像素中之電晶體,且其中一電晶體之源極/汲極屬於一摻雜物類型而其之配對電晶體則屬於相對的摻雜物類型時形成。CMOS裝置包括若干優點,其中一項優點係消耗的電源較少。
於較佳具體實施例中,本發明將說明成具有n型與p型摻雜。應瞭解,各種組件之摻雜類型可能相反而不致脫離本發明之範疇。
參考圖1,顯示一p型基板10,該基板10上(橫跨且直接)形成一第一p型磊晶層20。參考圖2,於該磊晶層20之頂上沈積一屏蔽氧化物層30,隨後穿透該屏蔽氧化物層30於該第一磊晶層20中植入一副集電器40,其較佳地為As或
Sb(一般熟知為n型)。參考圖3與圖6,沿該副集電器區域40周邊植入副集電器接點區域50(圖6中未顯示),較佳地為P(n型)。隨後移除該屏蔽氧化物層30,並參考圖4與6,於該第一磊晶層20上成長一第二磊晶層60。應注意,該副集電器40與該副集電器接點區域50會以不同速率擴散,其中該副集電器接點區域50的擴散速率比該副集電器區域40快。此係以圖3之此等區域之尺寸變大來說明。於該第二磊晶層60中植入複數個光敏部位70(n型),其在CCD或CMOS影像感測器之情況中較佳地為光二極體或光電容器。應注意,該副集電器40係處於比該等光敏部位70深之深度。應注意,可在程序之此階段或該程序中之某些稍後的時間點上植入該等光敏部位70。
參考圖5與圖6,接著,一植入物或複數個頂側植入物80被植入以接觸該副集電器40之副集電器接點區域50(圖6中未顯示),使得相對於該基板10加反向偏壓於該副集電器40。加反向偏壓於該副集電器40以排去可能擴散至鄰近光部位70的載子,從而減輕串擾。隨後執行熟知的影像感測器處理步驟以產生一完工的影像感測器。參考圖7,(例如)添加主動元件(如源極隨耦器放大器90)至該影像感測器。該等光敏部位70經由傳送閘極110將電荷傳送至浮動擴散100(於此轉換成一電壓)。隨後源極隨耦器90如同本技術中熟知的感測輸出之電壓。此等步驟於本技術中為一般所熟知,並且將不會顯示於本文中或於本文中加以討論。
仍然參考圖5,可視需要取代該等頂側植入物80,穿透
該基板10形成背側通道120以電連接至該副集電器接點區域50。
已參考一較佳具體實施例說明本發明。然而,將瞭解,熟悉本技術人士可進行若干變更與修改而不致脫離本發明之範疇。
10‧‧‧p型基板
20‧‧‧第一p型磊晶層
30‧‧‧屏蔽氧化物層
40‧‧‧副集電器
50‧‧‧副集電器接點區域
60‧‧‧第二磊晶層
70‧‧‧光敏部位(光二極體或光電容器)
80‧‧‧頂側植入物
90‧‧‧源極隨耦器放大器
100‧‧‧浮動擴散
110‧‧‧傳送閘極
120‧‧‧背側通道
PD‧‧‧光二極體
TG‧‧‧傳送閘極
FD‧‧‧浮動擴散
RG‧‧‧重設閘極
VDD‧‧‧電源供應
SF‧‧‧源極隨耦器電晶體(之閘極)
RS‧‧‧列選擇電晶體
Vout‧‧‧輸出
圖1至圖5係說明製造本發明之影像感測器之一步驟之圖6的斷面圖;圖6係本發明之影像感測器的俯視圖;以及圖7係本發明之一主動像素感測器之一個別像素的俯視圖。
10‧‧‧p型基板
20‧‧‧第一p型磊晶層
40‧‧‧副集電器
50‧‧‧副集電器接點區域
60‧‧‧第二磊晶層
70‧‧‧光敏部位(光二極體或光電容器)
80‧‧‧頂側植入物
120‧‧‧背側通道
Claims (9)
- 一種影像感測器,其包含:(a)一第一導電率類型之一基板,其具有含複數個光敏部位的一影像區,其中於該等光敏部位中收集回應於光而產生之電荷的一部分;(b)跨越該影像區之一第二導電率之一副集電器,其收集該所產生電荷之另一部分,不然的話有可能會擴散至鄰近的光敏區域;以及(c)一或多個接點,其連接至該副集電器以相對於該基板加反向偏壓於該副集電器。
- 如請求項1之影像感測器,其中該副集電器係處於比該等光敏部位深之一深度。
- 如請求項1之影像感測器,其中該影像感測器係一主動像素感測器。
- 如請求項1之影像感測器,其進一步包含沈積於該基板上之一第一磊晶層,於該第一磊晶層中形成該副集電器。
- 如請求項4之影像感測器,其進一步包含一第二磊晶層,於該第二磊晶層中佈置該等光敏部位。
- 如請求項4之影像感測器,其中該影像感測器係一主動像素感測器。
- 一種製造一影像感測器之方法,該方法包含下列步驟:(a)提供一基板,其具有一第一磊晶層;(b)於該第一磊晶層中植入一副集電器; (c)於連接至該副集電器之該第一磊晶層中植入一副集電器接點區域;(d)於該第一磊晶層上成長一第二磊晶層;以及(e)於該第二磊晶層中提供一或多個植入物以對該副集電器接點區域提供連接以相對於該基板加反向偏壓於該副集電器。
- 如請求項7之方法,其進一步包含擴散該副集電器與該副集電器接點區域之步驟。
- 如請求項7之方法,其進一步包含提供複數個像素之步驟,每一像素包含一主動元件以產生一主動像素感測器。
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8173535B2 (en) * | 2009-12-21 | 2012-05-08 | Omnivision Technologies, Inc. | Wafer structure to reduce dark current |
JP5971565B2 (ja) * | 2011-06-22 | 2016-08-17 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
WO2013092823A1 (en) | 2011-12-23 | 2013-06-27 | Sanofi-Aventis Deutschland Gmbh | Sensor arrangement for a packaging of a medicament |
JP5985269B2 (ja) * | 2012-06-26 | 2016-09-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9526468B2 (en) | 2014-09-09 | 2016-12-27 | General Electric Company | Multiple frame acquisition for exposure control in X-ray medical imagers |
WO2017183383A1 (ja) * | 2016-04-21 | 2017-10-26 | パナソニック・タワージャズセミコンダクター株式会社 | 固体撮像装置及びその製造方法 |
EP3422424B1 (en) * | 2017-06-27 | 2022-09-07 | ams AG | Semiconductor photodetector device with protection against ambient back light |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW517387B (en) * | 2000-09-25 | 2003-01-11 | Foveon Inc | Vertical color filter detector group and array |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0724301B2 (ja) * | 1987-03-31 | 1995-03-15 | キヤノン株式会社 | 光電変換装置 |
FR2633455B1 (fr) | 1988-06-24 | 1990-08-24 | Thomson Csf | Matrice photosensible a transfert de trame d.t.c., avec un systeme antieblouissement vertical, et procede de fabrication d'une telle matrice |
US5338946A (en) * | 1993-01-08 | 1994-08-16 | Eastman Kodak Company | Solid state image sensor with fast reset |
JPH09237912A (ja) * | 1995-12-28 | 1997-09-09 | Sony Corp | 受光素子及びその製造方法 |
DE69738645T2 (de) * | 1996-05-22 | 2009-06-10 | Eastman Kodak Co. | Aktiver Pixelsensor mit Durchbruch-Rücksetzstruktur und Unterdrückung des Übersprechsignales |
EP0883187A1 (en) | 1997-06-04 | 1998-12-09 | Interuniversitair Micro-Elektronica Centrum Vzw | A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector |
US6504194B1 (en) * | 1999-12-01 | 2003-01-07 | Innotech Corporation | Solid state imaging device, method of manufacturing the same, and solid state imaging system |
US6950134B2 (en) * | 2000-02-22 | 2005-09-27 | Innotech Corporation | Method of preventing transfer and storage of non-optically generated charges in solid state imaging device |
US20010054723A1 (en) * | 2000-03-17 | 2001-12-27 | Tadashi Narui | Image sensor, method of fabricating the same, and exposure apparatus, measuring device, alignment device, and aberration measuring device using the image sensor |
US6504196B1 (en) * | 2001-08-30 | 2003-01-07 | Micron Technology, Inc. | CMOS imager and method of formation |
JP4443865B2 (ja) * | 2002-06-24 | 2010-03-31 | 富士フイルム株式会社 | 固体撮像装置およびその製造方法 |
JP3840203B2 (ja) * | 2002-06-27 | 2006-11-01 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置を用いたカメラシステム |
JP2004319683A (ja) * | 2003-04-15 | 2004-11-11 | Sharp Corp | 固体撮像装置およびその駆動方法 |
US6953925B2 (en) * | 2003-04-28 | 2005-10-11 | Stmicroelectronics, Inc. | Microlens integration |
JP3829830B2 (ja) * | 2003-09-09 | 2006-10-04 | セイコーエプソン株式会社 | 固体撮像装置及びその駆動方法 |
KR100606906B1 (ko) * | 2004-12-29 | 2006-08-01 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 포토다이오드 및 그 제조방법 |
US20070045668A1 (en) * | 2005-08-26 | 2007-03-01 | Micron Technology, Inc. | Vertical anti-blooming control and cross-talk reduction for imagers |
EP2942813B1 (en) | 2006-08-09 | 2020-09-30 | Tohoku University | Optical sensor and solid-state imaging device |
-
2007
- 2007-03-15 US US11/686,540 patent/US20080138926A1/en not_active Abandoned
- 2007-12-05 JP JP2009540271A patent/JP5399917B2/ja active Active
- 2007-12-05 EP EP07862529A patent/EP2092565A1/en not_active Ceased
- 2007-12-05 KR KR1020097012006A patent/KR101373866B1/ko active IP Right Grant
- 2007-12-05 WO PCT/US2007/024888 patent/WO2008073247A1/en active Application Filing
- 2007-12-05 CN CN2007800458484A patent/CN101558496B/zh active Active
- 2007-12-10 TW TW096147083A patent/TWI451564B/zh active
-
2008
- 2008-10-08 US US12/247,248 patent/US7776638B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW517387B (en) * | 2000-09-25 | 2003-01-11 | Foveon Inc | Vertical color filter detector group and array |
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KR20090098811A (ko) | 2009-09-17 |
WO2008073247A1 (en) | 2008-06-19 |
EP2092565A1 (en) | 2009-08-26 |
CN101558496B (zh) | 2011-09-14 |
JP2010512641A (ja) | 2010-04-22 |
CN101558496A (zh) | 2009-10-14 |
US20090035888A1 (en) | 2009-02-05 |
US7776638B2 (en) | 2010-08-17 |
JP5399917B2 (ja) | 2014-01-29 |
TW200834898A (en) | 2008-08-16 |
KR101373866B1 (ko) | 2014-03-12 |
US20080138926A1 (en) | 2008-06-12 |
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