JP2010512641A - イメージセンサおよびその製造方法 - Google Patents
イメージセンサおよびその製造方法 Download PDFInfo
- Publication number
- JP2010512641A JP2010512641A JP2009540271A JP2009540271A JP2010512641A JP 2010512641 A JP2010512641 A JP 2010512641A JP 2009540271 A JP2009540271 A JP 2009540271A JP 2009540271 A JP2009540271 A JP 2009540271A JP 2010512641 A JP2010512641 A JP 2010512641A
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- JP
- Japan
- Prior art keywords
- image sensor
- subcollector
- epitaxial layer
- substrate
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000004044 response Effects 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 9
- 239000007943 implant Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (11)
- (a)複数の感光部を持つ画像領域を有し、光に反応して生成された電荷の一部が前記感光部に集められるような、第一の導電型の基板と、
(b)それがなければ隣接する感光部へと拡散するはずであった、生成された電荷の別の一部を集めるような、前記画像領域に広がる第二の導電型のサブコレクタと、
を備えることを特徴とするイメージセンサ。 - 前記サブコレクタが、前記感光部より深い位置にあることを特徴とする請求項1に記載のイメージセンサ。
- 前記イメージセンサが能動画素センサであることを特徴とする請求項1に記載のイメージセンサ。
- 前記基板の上に配置され、その中に前記サブコレクタが形成される第一のエピタキシャル層をさらに備えることを特徴とする請求項1に記載のイメージセンサ。
- その中に前記感光部が配置される第二のエピタキシャル層をさらに備えることを特徴とする請求項4に記載のイメージセンサ。
- 前記イメージセンサが能動画素センサであることを特徴とする請求項4に記載のイメージセンサ。
- 前記サブコレクタに接続し、前記サブコレクタを前記基板に関して逆バイアスするための1つまたは複数のコンタクトをさらに備えることを特徴とする請求項1に記載のイメージセンサ。
- (a)第一のエピタキシャル層を有する基板を設置するステップと、
(b)前記第一のエピタキシャル層の中にサブコレクタを埋め込むステップと、
(c)前記第一のエピタキシャル層の中に、前記サブコレクタに接続するサブコレクタ接触領域を埋め込むステップと、
(d)前記第一のエピタキシャル層の上に第二のエピタキシャル層を成長させるステップと、
を含むことを特徴とするイメージセンサの製造方法。 - 前記サブコレクタと前記サブコレクタ接触領域を拡散させるステップをさらに含むことを特徴とする請求項8に記載の方法。
- 前記第二のエピタキシャル層の中に、前記サブコレクタ接触領域との接続を実現するために、1つまたは複数の注入物を設置するステップをさらに含むことを特徴とする請求項8に記載の方法。
- 能動画素センサを作るために、それぞれ能動素子を含む複数の画素を設置するステップをさらに含むことを特徴とする請求項8に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86943106P | 2006-12-11 | 2006-12-11 | |
US60/869,431 | 2006-12-11 | ||
US11/686,540 US20080138926A1 (en) | 2006-12-11 | 2007-03-15 | Two epitaxial layers to reduce crosstalk in an image sensor |
US11/686,540 | 2007-03-15 | ||
PCT/US2007/024888 WO2008073247A1 (en) | 2006-12-11 | 2007-12-05 | Two epitaxial layers with buried subcollector to reduce crosstalk in an image sensor |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010512641A true JP2010512641A (ja) | 2010-04-22 |
JP2010512641A5 JP2010512641A5 (ja) | 2011-09-01 |
JP5399917B2 JP5399917B2 (ja) | 2014-01-29 |
Family
ID=39278170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009540271A Active JP5399917B2 (ja) | 2006-12-11 | 2007-12-05 | イメージセンサおよびその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20080138926A1 (ja) |
EP (1) | EP2092565A1 (ja) |
JP (1) | JP5399917B2 (ja) |
KR (1) | KR101373866B1 (ja) |
CN (1) | CN101558496B (ja) |
TW (1) | TWI451564B (ja) |
WO (1) | WO2008073247A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017183383A1 (ja) * | 2016-04-21 | 2017-10-26 | パナソニック・タワージャズセミコンダクター株式会社 | 固体撮像装置及びその製造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8173535B2 (en) * | 2009-12-21 | 2012-05-08 | Omnivision Technologies, Inc. | Wafer structure to reduce dark current |
WO2012176454A1 (ja) * | 2011-06-22 | 2012-12-27 | パナソニック株式会社 | 固体撮像装置 |
AU2012357007B2 (en) * | 2011-12-23 | 2015-08-13 | Sanofi-Aventis Deutschland Gmbh | Sensor arrangement for a packaging of a medicament |
JP5985269B2 (ja) * | 2012-06-26 | 2016-09-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9526468B2 (en) | 2014-09-09 | 2016-12-27 | General Electric Company | Multiple frame acquisition for exposure control in X-ray medical imagers |
EP3422424B1 (en) * | 2017-06-27 | 2022-09-07 | ams AG | Semiconductor photodetector device with protection against ambient back light |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63244771A (ja) * | 1987-03-31 | 1988-10-12 | Canon Inc | 光電変換装置 |
JPH09237912A (ja) * | 1995-12-28 | 1997-09-09 | Sony Corp | 受光素子及びその製造方法 |
JP2004510355A (ja) * | 2000-09-25 | 2004-04-02 | フォベオン・インコーポレーテッド | 垂直型カラーフィルタ検出器群及びアレイ |
Family Cites Families (16)
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FR2633455B1 (fr) | 1988-06-24 | 1990-08-24 | Thomson Csf | Matrice photosensible a transfert de trame d.t.c., avec un systeme antieblouissement vertical, et procede de fabrication d'une telle matrice |
US5338946A (en) * | 1993-01-08 | 1994-08-16 | Eastman Kodak Company | Solid state image sensor with fast reset |
DE69738645T2 (de) * | 1996-05-22 | 2009-06-10 | Eastman Kodak Co. | Aktiver Pixelsensor mit Durchbruch-Rücksetzstruktur und Unterdrückung des Übersprechsignales |
EP0883187A1 (en) | 1997-06-04 | 1998-12-09 | Interuniversitair Micro-Elektronica Centrum Vzw | A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector |
TW494574B (en) * | 1999-12-01 | 2002-07-11 | Innotech Corp | Solid state imaging device, method of manufacturing the same, and solid state imaging system |
US6950134B2 (en) * | 2000-02-22 | 2005-09-27 | Innotech Corporation | Method of preventing transfer and storage of non-optically generated charges in solid state imaging device |
US20010054723A1 (en) * | 2000-03-17 | 2001-12-27 | Tadashi Narui | Image sensor, method of fabricating the same, and exposure apparatus, measuring device, alignment device, and aberration measuring device using the image sensor |
US6504196B1 (en) * | 2001-08-30 | 2003-01-07 | Micron Technology, Inc. | CMOS imager and method of formation |
JP4443865B2 (ja) | 2002-06-24 | 2010-03-31 | 富士フイルム株式会社 | 固体撮像装置およびその製造方法 |
JP3840203B2 (ja) * | 2002-06-27 | 2006-11-01 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置を用いたカメラシステム |
JP2004319683A (ja) * | 2003-04-15 | 2004-11-11 | Sharp Corp | 固体撮像装置およびその駆動方法 |
US6953925B2 (en) * | 2003-04-28 | 2005-10-11 | Stmicroelectronics, Inc. | Microlens integration |
JP3829830B2 (ja) * | 2003-09-09 | 2006-10-04 | セイコーエプソン株式会社 | 固体撮像装置及びその駆動方法 |
KR100606906B1 (ko) * | 2004-12-29 | 2006-08-01 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 포토다이오드 및 그 제조방법 |
US20070045668A1 (en) * | 2005-08-26 | 2007-03-01 | Micron Technology, Inc. | Vertical anti-blooming control and cross-talk reduction for imagers |
EP1887626A1 (en) * | 2006-08-09 | 2008-02-13 | Tohoku University | Optical sensor comprising overflow gate and storage capacitor |
-
2007
- 2007-03-15 US US11/686,540 patent/US20080138926A1/en not_active Abandoned
- 2007-12-05 CN CN2007800458484A patent/CN101558496B/zh active Active
- 2007-12-05 JP JP2009540271A patent/JP5399917B2/ja active Active
- 2007-12-05 KR KR1020097012006A patent/KR101373866B1/ko active IP Right Grant
- 2007-12-05 WO PCT/US2007/024888 patent/WO2008073247A1/en active Application Filing
- 2007-12-05 EP EP07862529A patent/EP2092565A1/en not_active Ceased
- 2007-12-10 TW TW096147083A patent/TWI451564B/zh active
-
2008
- 2008-10-08 US US12/247,248 patent/US7776638B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63244771A (ja) * | 1987-03-31 | 1988-10-12 | Canon Inc | 光電変換装置 |
JPH09237912A (ja) * | 1995-12-28 | 1997-09-09 | Sony Corp | 受光素子及びその製造方法 |
JP2004510355A (ja) * | 2000-09-25 | 2004-04-02 | フォベオン・インコーポレーテッド | 垂直型カラーフィルタ検出器群及びアレイ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017183383A1 (ja) * | 2016-04-21 | 2017-10-26 | パナソニック・タワージャズセミコンダクター株式会社 | 固体撮像装置及びその製造方法 |
JPWO2017183383A1 (ja) * | 2016-04-21 | 2019-01-17 | パナソニック・タワージャズセミコンダクター株式会社 | 固体撮像装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5399917B2 (ja) | 2014-01-29 |
TWI451564B (zh) | 2014-09-01 |
US20090035888A1 (en) | 2009-02-05 |
US20080138926A1 (en) | 2008-06-12 |
KR101373866B1 (ko) | 2014-03-12 |
CN101558496B (zh) | 2011-09-14 |
KR20090098811A (ko) | 2009-09-17 |
CN101558496A (zh) | 2009-10-14 |
EP2092565A1 (en) | 2009-08-26 |
US7776638B2 (en) | 2010-08-17 |
TW200834898A (en) | 2008-08-16 |
WO2008073247A1 (en) | 2008-06-19 |
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