CN104517983B - 固态成像装置、其制造方法和成像系统 - Google Patents
固态成像装置、其制造方法和成像系统 Download PDFInfo
- Publication number
- CN104517983B CN104517983B CN201410499673.6A CN201410499673A CN104517983B CN 104517983 B CN104517983 B CN 104517983B CN 201410499673 A CN201410499673 A CN 201410499673A CN 104517983 B CN104517983 B CN 104517983B
- Authority
- CN
- China
- Prior art keywords
- semiconductor regions
- semiconductor region
- conduction type
- impurity concentration
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 264
- 239000012535 impurity Substances 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000009826 distribution Methods 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 4
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 abstract description 21
- 230000007423 decrease Effects 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000005036 potential barrier Methods 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003333 near-infrared imaging Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/63—Control of cameras or camera modules by using electronic viewfinders
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/222—Studio circuitry; Studio devices; Studio equipment
- H04N5/262—Studio circuits, e.g. for mixing, switching-over, change of character of image, other special effects ; Cameras specially adapted for the electronic generation of special effects
- H04N5/265—Mixing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8027—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-210588 | 2013-10-07 | ||
| JP2013210588A JP6355311B2 (ja) | 2013-10-07 | 2013-10-07 | 固体撮像装置、その製造方法及び撮像システム |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104517983A CN104517983A (zh) | 2015-04-15 |
| CN104517983B true CN104517983B (zh) | 2018-01-05 |
Family
ID=51518700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410499673.6A Active CN104517983B (zh) | 2013-10-07 | 2014-09-26 | 固态成像装置、其制造方法和成像系统 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US9761618B2 (enExample) |
| EP (1) | EP2866260B1 (enExample) |
| JP (1) | JP6355311B2 (enExample) |
| CN (1) | CN104517983B (enExample) |
| RU (1) | RU2589519C2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6355311B2 (ja) | 2013-10-07 | 2018-07-11 | キヤノン株式会社 | 固体撮像装置、その製造方法及び撮像システム |
| JP6595750B2 (ja) | 2014-03-14 | 2019-10-23 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
| JP6274567B2 (ja) * | 2014-03-14 | 2018-02-07 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
| JP6579774B2 (ja) * | 2015-03-30 | 2019-09-25 | キヤノン株式会社 | 固体撮像装置およびカメラ |
| US9900539B2 (en) | 2015-09-10 | 2018-02-20 | Canon Kabushiki Kaisha | Solid-state image pickup element, and image pickup system |
| US10205894B2 (en) | 2015-09-11 | 2019-02-12 | Canon Kabushiki Kaisha | Imaging device and imaging system |
| JP6541523B2 (ja) | 2015-09-11 | 2019-07-10 | キヤノン株式会社 | 撮像装置、撮像システム、および、撮像装置の制御方法 |
| JP6570384B2 (ja) | 2015-09-11 | 2019-09-04 | キヤノン株式会社 | 撮像装置及び撮像システム |
| JP6674219B2 (ja) | 2015-10-01 | 2020-04-01 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
| JP6862129B2 (ja) * | 2016-08-29 | 2021-04-21 | キヤノン株式会社 | 光電変換装置および撮像システム |
| JP7121468B2 (ja) * | 2017-02-24 | 2022-08-18 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の製造方法、および電子機器 |
| JP7668464B2 (ja) * | 2019-09-26 | 2025-04-25 | パナソニックＩｐマネジメント株式会社 | 撮像装置 |
| US12376407B2 (en) * | 2021-07-19 | 2025-07-29 | Samsung Electronics Co., Ltd. | Image sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1487589A (zh) * | 2002-05-20 | 2004-04-07 | ���ṫ˾ | 固态图像拾取器件及其制造方法 |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63142848A (ja) * | 1986-12-05 | 1988-06-15 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置 |
| JPS63174358A (ja) * | 1987-01-14 | 1988-07-18 | Hitachi Ltd | 固体撮像素子 |
| JPH0191453A (ja) * | 1987-10-02 | 1989-04-11 | Fuji Photo Film Co Ltd | 固体撮像装置 |
| JP2508218B2 (ja) * | 1988-09-27 | 1996-06-19 | 日本電気株式会社 | 相補型ｍｉｓ集積回路 |
| JP3381281B2 (ja) * | 1992-10-31 | 2003-02-24 | ソニー株式会社 | 半導体装置 |
| JPH07273364A (ja) | 1994-04-01 | 1995-10-20 | Matsushita Electron Corp | 固体撮像装置およびその製造方法 |
| JP2798006B2 (ja) | 1995-05-19 | 1998-09-17 | 日本電気株式会社 | 赤外線固体撮像素子とその製造方法 |
| JPH1126741A (ja) * | 1997-07-04 | 1999-01-29 | Toshiba Corp | 固体撮像装置 |
| JPH11251567A (ja) * | 1998-03-05 | 1999-09-17 | Canon Inc | 光電変換装置 |
| JP4109743B2 (ja) * | 1998-03-19 | 2008-07-02 | 株式会社東芝 | 固体撮像装置 |
| US6310366B1 (en) * | 1999-06-16 | 2001-10-30 | Micron Technology, Inc. | Retrograde well structure for a CMOS imager |
| JP2002043557A (ja) * | 2000-07-21 | 2002-02-08 | Mitsubishi Electric Corp | 固体撮像素子を有する半導体装置およびその製造方法 |
| JP4270742B2 (ja) | 2000-11-30 | 2009-06-03 | Ｎｅｃエレクトロニクス株式会社 | 固体撮像装置 |
| JP4510414B2 (ja) * | 2003-09-12 | 2010-07-21 | キヤノン株式会社 | 光電変換装置 |
| US7323731B2 (en) | 2003-12-12 | 2008-01-29 | Canon Kabushiki Kaisha | Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system |
| JP4612818B2 (ja) * | 2004-08-31 | 2011-01-12 | キヤノン株式会社 | 固体撮像素子、固体撮像装置及び撮像システム |
| JP4174468B2 (ja) * | 2003-12-12 | 2008-10-29 | キヤノン株式会社 | 光電変換装置及び撮像システム |
| CN101369594B (zh) | 2003-12-12 | 2012-06-27 | 佳能株式会社 | 光电变换装置及其制造方法和摄像系统 |
| JP5224633B2 (ja) | 2004-03-30 | 2013-07-03 | キヤノン株式会社 | 半導体装置の製造方法 |
| JP4984376B2 (ja) * | 2004-04-15 | 2012-07-25 | ソニー株式会社 | 固体撮像装置 |
| JP4211696B2 (ja) * | 2004-06-30 | 2009-01-21 | ソニー株式会社 | 固体撮像装置の製造方法 |
| JP2006197393A (ja) | 2005-01-14 | 2006-07-27 | Canon Inc | 固体撮像装置、カメラ、及び固体撮像装置の駆動方法 |
| US8049293B2 (en) * | 2005-03-07 | 2011-11-01 | Sony Corporation | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device |
| JP2008034836A (ja) * | 2006-07-03 | 2008-02-14 | Univ Kinki | 固体撮像素子 |
| JP5328207B2 (ja) * | 2008-04-01 | 2013-10-30 | キヤノン株式会社 | 固体撮像装置 |
| JP2010056402A (ja) * | 2008-08-29 | 2010-03-11 | Panasonic Corp | 固体撮像素子 |
| JP2009088545A (ja) | 2008-11-28 | 2009-04-23 | Nec Electronics Corp | 固体撮像装置 |
| JP2010177594A (ja) * | 2009-01-30 | 2010-08-12 | Yamaha Corp | 固体撮像装置 |
| JP2010206181A (ja) * | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置及び撮像システム |
| JP5522980B2 (ja) * | 2009-06-18 | 2014-06-18 | キヤノン株式会社 | 固体撮像装置、固体撮像装置を用いた撮像システム、および固体撮像装置の製造方法 |
| JP5306123B2 (ja) * | 2009-09-11 | 2013-10-02 | 株式会社東芝 | 裏面照射型固体撮像装置 |
| JP5546222B2 (ja) * | 2009-12-04 | 2014-07-09 | キヤノン株式会社 | 固体撮像装置及び製造方法 |
| JP2011205040A (ja) | 2010-03-26 | 2011-10-13 | Brainvision Inc | 半導体基板および光電変換素子ならびにそれらの製造方法 |
| JP5726005B2 (ja) * | 2010-08-02 | 2015-05-27 | アイメックＩｍｅｃ | Ｃｍｏｓ撮像装置アレイの製造方法 |
| JP5677238B2 (ja) * | 2011-08-29 | 2015-02-25 | 株式会社日立製作所 | 固体撮像装置 |
| JP5864990B2 (ja) | 2011-10-03 | 2016-02-17 | キヤノン株式会社 | 固体撮像装置およびカメラ |
| JP5967915B2 (ja) | 2011-12-09 | 2016-08-10 | キヤノン株式会社 | 固体撮像装置の駆動方法 |
| JP6083930B2 (ja) * | 2012-01-18 | 2017-02-22 | キヤノン株式会社 | 光電変換装置および撮像システム、光電変換装置の製造方法 |
| JP5968146B2 (ja) | 2012-07-31 | 2016-08-10 | キヤノン株式会社 | 固体撮像装置およびカメラ |
| JP6355311B2 (ja) * | 2013-10-07 | 2018-07-11 | キヤノン株式会社 | 固体撮像装置、その製造方法及び撮像システム |
-
2013
- 2013-10-07 JP JP2013210588A patent/JP6355311B2/ja active Active
-
2014
- 2014-09-12 EP EP14184612.1A patent/EP2866260B1/en active Active
- 2014-09-18 US US14/489,812 patent/US9761618B2/en not_active Expired - Fee Related
- 2014-09-26 CN CN201410499673.6A patent/CN104517983B/zh active Active
- 2014-09-29 RU RU2014139258/28A patent/RU2589519C2/ru active
-
2017
- 2017-06-29 US US15/637,155 patent/US9947702B2/en active Active
-
2018
- 2018-03-01 US US15/908,997 patent/US10217780B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1487589A (zh) * | 2002-05-20 | 2004-04-07 | ���ṫ˾ | 固态图像拾取器件及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2866260A3 (en) | 2015-08-26 |
| US9947702B2 (en) | 2018-04-17 |
| CN104517983A (zh) | 2015-04-15 |
| US10217780B2 (en) | 2019-02-26 |
| US20170317121A1 (en) | 2017-11-02 |
| EP2866260A2 (en) | 2015-04-29 |
| EP2866260B1 (en) | 2019-02-06 |
| RU2014139258A (ru) | 2016-04-20 |
| JP2015076453A (ja) | 2015-04-20 |
| RU2589519C2 (ru) | 2016-07-10 |
| US20160027825A1 (en) | 2016-01-28 |
| US9761618B2 (en) | 2017-09-12 |
| JP6355311B2 (ja) | 2018-07-11 |
| US20180261637A1 (en) | 2018-09-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104517983B (zh) | 固态成像装置、其制造方法和成像系统 | |
| CN101473441B (zh) | 具有低串扰的pmos像素结构 | |
| TWI225304B (en) | Solid-state image sensing device and camera system using the same | |
| CN103050500B (zh) | 图像传感器的部分掩埋沟道传送装置 | |
| US7205627B2 (en) | Image sensor cells | |
| CN102362351B (zh) | 背照式cmos图像传感器 | |
| JPWO2012176454A1 (ja) | 固体撮像装置 | |
| US9287319B2 (en) | CMOS multi-pinned (MP) pixel | |
| US8994138B2 (en) | Hardened photodiode image sensor | |
| CN107895743B (zh) | 单光子雪崩光电二极管探测器的装置和方法 | |
| JP5165588B2 (ja) | 可視光を検出するために最適化された半導体放射線検出器 | |
| CN108183113B (zh) | 光电转换设备、相机、制造半导体基板的方法以及制造光电转换设备的方法 | |
| WO2004017411A1 (ja) | 固体撮像素子及びその製造方法 | |
| CN109638025A (zh) | Cmos图像传感器及其制备方法 | |
| US8513753B1 (en) | Photodiode having a buried well region | |
| JP2018139328A (ja) | 固体撮像装置および撮像システム | |
| JP7199013B2 (ja) | 光検出器 | |
| RU2377692C1 (ru) | Кмоп-фотоприемный элемент с высоким фактором заполнения | |
| KR20230009400A (ko) | 광 검출 장치, 및 광 센서의 구동 방법 | |
| CN101320764A (zh) | 感光二极管的制作方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |