JP6244146B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP6244146B2 JP6244146B2 JP2013192770A JP2013192770A JP6244146B2 JP 6244146 B2 JP6244146 B2 JP 6244146B2 JP 2013192770 A JP2013192770 A JP 2013192770A JP 2013192770 A JP2013192770 A JP 2013192770A JP 6244146 B2 JP6244146 B2 JP 6244146B2
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 81
- 239000004065 semiconductor Substances 0.000 claims description 365
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- 239000000126 substance Substances 0.000 description 62
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 49
- 150000001342 alkaline earth metals Chemical class 0.000 description 49
- 229910052783 alkali metal Inorganic materials 0.000 description 47
- 150000001340 alkali metals Chemical class 0.000 description 46
- 229910052739 hydrogen Inorganic materials 0.000 description 46
- 239000001257 hydrogen Substances 0.000 description 44
- 239000000758 substrate Substances 0.000 description 43
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 35
- 238000000034 method Methods 0.000 description 27
- 239000011701 zinc Substances 0.000 description 23
- 239000003990 capacitor Substances 0.000 description 21
- 239000013078 crystal Substances 0.000 description 21
- 239000011734 sodium Substances 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 13
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
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- 239000004593 Epoxy Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910020868 Sn-Ga-Zn Inorganic materials 0.000 description 2
- 229910020994 Sn-Zn Inorganic materials 0.000 description 2
- 229910009069 Sn—Zn Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 150000001339 alkali metal compounds Chemical class 0.000 description 2
- 150000001341 alkaline earth metal compounds Chemical class 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
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- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
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- 239000011229 interlayer Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910020833 Sn-Al-Zn Inorganic materials 0.000 description 1
- 229910020944 Sn-Mg Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910009369 Zn Mg Inorganic materials 0.000 description 1
- 229910007573 Zn-Mg Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910001514 alkali metal chloride Inorganic materials 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052730 francium Inorganic materials 0.000 description 1
- KLMCZVJOEAUDNE-UHFFFAOYSA-N francium atom Chemical compound [Fr] KLMCZVJOEAUDNE-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
図1〜図3を用いて、半導体装置の一例について説明する。
FFS(Fringe Field Switching)駆動の液晶表示装置(半導体装置の一種)の一例について述べる。
酸化物半導体層310の抵抗値が高い場合がある。
他の実施の形態では酸化物半導体層310を全ての画素に跨るように設けた例を示した。
配線L3又は配線L4に対応する酸化物半導体層(酸化物半導体層310等)の抵抗値を下げるために、配線L3又は配線L4に対応する酸化物半導体層にアルカリ金属、アルカリ土類金属、水素等を含有させると好ましい。
図14〜図18は、酸化物半導体層310にアルカリ金属、アルカリ土類金属、水素等を含有させるための構造の一例である。
図15及び図16の場合において、絶縁層300の開口部を導電層201、導電層211、導電層212、導電層213等と重ねると、導電層同士がショートしてしまう。
図22は、図15において、導電層550等を追加した例である。
図25は、図1中の1つの画素の少なくとも一部を示した例である。
図28は、図1中の2つの画素の少なくとも一部を示した例である。
図30は、図1中の2つの画素の少なくとも一部を示した例である。
基板、絶縁層、導電層、及び酸化物半導体層の材料について説明する。
他の実施の形態では、逆スタガ構造のトランジスタについて説明したが、トランジスタの構造は限定されない。
他の実施の形態では、酸化物半導体層310を容量素子の他方の電極又は表示素子の他方の電極として用いる例を示したが、酸化物半導体層310を容量素子の一方の電極又は表示素子の一方の電極として用いても良い。
半導体装置とは、半導体を有する素子を有する装置である。
102 基板
150 絶縁層
201 導電層
202 導電層
203 導電層
211 導電層
212 導電層
213 導電層
214 導電層
222 導電層
300 絶縁層
301 酸化物半導体層
302 酸化物半導体層
303 酸化物半導体層
310 酸化物半導体層
500 絶縁層
501 導電層
502 導電層
503 導電層
511 導電層
512 導電層
513 導電層
514 導電層
521 導電層
522 導電層
523 導電層
524 導電層
525 導電層
526 導電層
527 導電層
528 導電層
529 導電層
550 導電層
599 導電層
701 導電層
711 導電層
712 導電層
800 液晶層
900 導電層
8001 第1の方向
8002 第2の方向
Tr トランジスタ
L1 配線
L2 配線
L3 配線
L4 配線
C 容量素子
LC 液晶素子
Claims (5)
- 第1のゲート配線と、第2のゲート配線と、
前記第1のゲート配線上及び前記第2のゲート配線上に接する第1の絶縁層と、
前記第1の絶縁層上に接し、前記第1のゲート配線と重なる領域を有する第1の半導体層と、
前記第1の絶縁層上に接し、前記第2のゲート配線と重なる領域を有する第2の半導体層と、
前記第1の半導体層と接する領域を有する第1の導電層と、
前記第2の半導体層と接する領域を有する第2の導電層と、
前記第1の半導体層及び前記第2の半導体層と電気的に接続されたソース配線と、
前記第1の導電層、前記第2の導電層及び前記ソース配線と同一材料を有する第3の導電層と、
前記第1の導電層と電気的に接続された、第1の液晶素子の画素電極と、
前記第2の導電層と電気的に接続された、第2の液晶素子の画素電極と、
前記第1の液晶素子の画素電極及び前記第2の液晶素子の画素電極と接する第2の絶縁層と、
前記第2の絶縁層を介して、前記第1の液晶素子の画素電極及び前記第2の液晶素子の画素電極のそれぞれと重なる領域を有する第4の導電層と、を有し、
前記第1の導電層は、遮光性又は反射性を有し、
前記第2の導電層は、遮光性又は反射性を有し、
前記第4の導電層は、前記第1の液晶素子のコモン電極として機能する領域と、前記第2の液晶素子のコモン電極として機能する領域とを有し、
前記第3の導電層は、前記第1のゲート配線と重なる領域を有し、
前記第4の導電層は、前記第3の導電層と、前記第1のゲート配線とが重なる領域において、前記第1のゲート配線と重なる領域を有することを特徴とする液晶表示装置。 - 第1のゲート配線と、第2のゲート配線と、
前記第1のゲート配線上及び前記第2のゲート配線上に接する第1の絶縁層と、
前記第1の絶縁層上に接し、前記第1のゲート配線と重なる領域を有する第1の半導体層と、
前記第1の絶縁層上に接し、前記第2のゲート配線と重なる領域を有する第2の半導体層と、
前記第1の半導体層と接する領域を有する第1の導電層と、
前記第2の半導体層と接する領域を有する第2の導電層と、
前記第1の半導体層及び前記第2の半導体層と電気的に接続されたソース配線と、
前記第1の導電層、前記第2の導電層及び前記ソース配線と同一材料を有する第3の導電層と、
前記第1の導電層と電気的に接続された、第1の液晶素子の画素電極と、
前記第2の導電層と電気的に接続された、第2の液晶素子の画素電極と、
前記第1の液晶素子の画素電極及び前記第2の液晶素子の画素電極と接する第2の絶縁層と、
前記第2の絶縁層を介して、前記第1の液晶素子の画素電極及び前記第2の液晶素子の画素電極のそれぞれと重なる領域を有する第4の導電層と、を有し、
前記第1の導電層は、遮光性又は反射性を有し、
前記第2の導電層は、遮光性又は反射性を有し、
前記第4の導電層は、前記第1の液晶素子のコモン電極として機能する領域と、前記第2の液晶素子のコモン電極として機能する領域とを有し、
前記第3の導電層は、前記第1のゲート配線と重なる領域を有し、
前記第4の導電層は、前記第3の導電層と、前記第1のゲート配線とが重なる領域において、前記第1のゲート配線と重なる領域を有し、
前記ソース配線は、前記第1のゲート配線及び前記第2のゲート配線のそれぞれと交差する領域を有し、
前記第1のゲート配線と前記第2のゲート配線との間の領域において、前記ソース配線は前記第4の導電層と重なる領域を有さないことを特徴とする液晶表示装置。 - 第1のゲート配線と、第2のゲート配線と、
前記第1のゲート配線上及び前記第2のゲート配線上に接する第1の絶縁層と、
前記第1の絶縁層上に接し、前記第1のゲート配線と重なる領域を有する第1の半導体層と、
前記第1の絶縁層上に接し、前記第2のゲート配線と重なる領域を有する第2の半導体層と、
前記第1の半導体層と接する領域を有する第1の導電層と、
前記第2の半導体層と接する領域を有する第2の導電層と、
前記第1の半導体層及び前記第2の半導体層と電気的に接続されたソース配線と、
前記第1の導電層、前記第2の導電層及び前記ソース配線と同一材料を有する第3の導電層と、
前記第1の導電層と電気的に接続された、第1の液晶素子の画素電極と、
前記第2の導電層と電気的に接続された、第2の液晶素子の画素電極と、
前記第1の液晶素子の画素電極及び前記第2の液晶素子の画素電極と接する第2の絶縁層と、
前記第2の絶縁層を介して、前記第1の液晶素子の画素電極及び前記第2の液晶素子の画素電極のそれぞれと重なる領域を有する第4の導電層と、を有し、
前記第1の導電層は、遮光性又は反射性を有し、
前記第2の導電層は、遮光性又は反射性を有し、
前記第4の導電層は、前記第1の液晶素子のコモン電極として機能する領域と、前記第2の液晶素子のコモン電極として機能する領域とを有し、
前記第3の導電層は、全体が前記第1のゲート配線と重なるように配置され、
前記第4の導電層は、前記第3の導電層と、前記第1のゲート配線とが重なる領域において、前記第1のゲート配線と重なる領域を有することを特徴とする液晶表示装置。 - 第1のゲート配線と、第2のゲート配線と、
前記第1のゲート配線上及び前記第2のゲート配線上に接する第1の絶縁層と、
前記第1の絶縁層上に接し、前記第1のゲート配線と重なる領域を有する第1の半導体層と、
前記第1の絶縁層上に接し、前記第2のゲート配線と重なる領域を有する第2の半導体層と、
前記第1の半導体層と接する領域を有する第1の導電層と、
前記第2の半導体層と接する領域を有する第2の導電層と、
前記第1の半導体層及び前記第2の半導体層と電気的に接続されたソース配線と、
前記第1の導電層、前記第2の導電層及び前記ソース配線と同一材料を有する第3の導電層と、
前記第1の導電層と電気的に接続された、第1の液晶素子の画素電極と、
前記第2の導電層と電気的に接続された、第2の液晶素子の画素電極と、
前記第1の液晶素子の画素電極及び前記第2の液晶素子の画素電極と接する第2の絶縁層と、
前記第2の絶縁層を介して、前記第1の液晶素子の画素電極及び前記第2の液晶素子の画素電極のそれぞれと重なる領域を有する第4の導電層と、を有し、
前記第1の導電層は、遮光性又は反射性を有し、
前記第2の導電層は、遮光性又は反射性を有し、
前記第4の導電層は、前記第1の液晶素子のコモン電極として機能する領域と、前記第2の液晶素子のコモン電極として機能する領域とを有し、
前記第3の導電層は、全体が前記第1のゲート配線と重なるように配置され、
前記第4の導電層は、前記第3の導電層と、前記第1のゲート配線とが重なる領域において、前記第1のゲート配線と重なる領域を有し、
前記ソース配線は、前記第1のゲート配線及び前記第2のゲート配線のそれぞれと交差する領域を有し、
前記第1のゲート配線と前記第2のゲート配線との間の領域において、前記ソース配線は前記第4の導電層と重なる領域を有さないことを特徴とする液晶表示装置。 - 第1のゲート配線と、第2のゲート配線と、
前記第1のゲート配線上及び前記第2のゲート配線上に接する第1の絶縁層と、
前記第1の絶縁層上に接し、前記第1のゲート配線と重なる領域を有する第1の半導体層と、
前記第1の絶縁層上に接し、前記第2のゲート配線と重なる領域を有する第2の半導体層と、
前記第1の半導体層と接する領域を有する第1の導電層と、
前記第2の半導体層と接する領域を有する第2の導電層と、
前記第1の半導体層及び前記第2の半導体層と電気的に接続されたソース配線と、
前記第1の導電層及び前記第2の導電層と同一材料を有する第3の導電層と、
前記第1の導電層と電気的に接続された、第1の液晶素子の画素電極と、
前記第2の導電層と電気的に接続された、第2の液晶素子の画素電極と、
前記第1の液晶素子の画素電極及び前記第2の液晶素子の画素電極と接する第2の絶縁層と、
前記第2の絶縁層を介して、前記第1の液晶素子の画素電極及び前記第2の液晶素子の画素電極のそれぞれと重なる領域を有する第4の導電層と、を有し、
前記第1の導電層は、遮光性又は反射性を有し、
前記第2の導電層は、遮光性又は反射性を有し、
前記第4の導電層は、前記第1の液晶素子のコモン電極として機能する領域と、前記第2の液晶素子のコモン電極として機能する領域とを有し、
前記第3の導電層は、前記第1のゲート配線と重なる領域を有し、
前記第4の導電層は、前記第3の導電層と、前記第1のゲート配線とが重なる領域において、前記第1のゲート配線と重なる領域を有することを特徴とする液晶表示装置。
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TWI686844B (zh) | 2015-03-17 | 2020-03-01 | 日商東京威力科創股份有限公司 | 基板處理方法及基板處理裝置 |
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JP2023065493A (ja) | 2023-05-12 |
JP2021119603A (ja) | 2021-08-12 |
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JP2018055114A (ja) | 2018-04-05 |
JP6286610B1 (ja) | 2018-02-28 |
JP2018101145A (ja) | 2018-06-28 |
JP2019208034A (ja) | 2019-12-05 |
US20140077208A1 (en) | 2014-03-20 |
US8927985B2 (en) | 2015-01-06 |
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