JP6192646B2 - 高性能な電気的に安定した半導電性の金属酸化物層の製造法、当該方法により製造された層および当該層の使用 - Google Patents

高性能な電気的に安定した半導電性の金属酸化物層の製造法、当該方法により製造された層および当該層の使用 Download PDF

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JP6192646B2
JP6192646B2 JP2014533817A JP2014533817A JP6192646B2 JP 6192646 B2 JP6192646 B2 JP 6192646B2 JP 2014533817 A JP2014533817 A JP 2014533817A JP 2014533817 A JP2014533817 A JP 2014533817A JP 6192646 B2 JP6192646 B2 JP 6192646B2
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metal oxide
oxide layer
liquid phase
layer
metal
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JP2015501529A (ja
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シュタイガー ユルゲン
シュタイガー ユルゲン
ヴ ファム ドゥイ
ヴ ファム ドゥイ
ノイマン アニータ
ノイマン アニータ
メルクロフ アレクセイ
メルクロフ アレクセイ
ホッペ アーネ
ホッペ アーネ
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Evonik Operations GmbH
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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JP2014533817A 2011-10-07 2012-09-12 高性能な電気的に安定した半導電性の金属酸化物層の製造法、当該方法により製造された層および当該層の使用 Expired - Fee Related JP6192646B2 (ja)

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DE102011084145.8 2011-10-07
DE102011084145A DE102011084145A1 (de) 2011-10-07 2011-10-07 Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung
PCT/EP2012/067804 WO2013050221A1 (de) 2011-10-07 2012-09-12 Verfahren zur herstellung von hochperformanten und elektrisch stabilen, halbleitenden metalloxidschichten, nach dem verfahren hergestellte schichten und deren verwendung

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JP2015501529A JP2015501529A (ja) 2015-01-15
JP6192646B2 true JP6192646B2 (ja) 2017-09-06

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DE (1) DE102011084145A1 (enExample)
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IN2014CN03328A (enExample) 2015-07-03
KR20140072148A (ko) 2014-06-12
JP2015501529A (ja) 2015-01-15
WO2013050221A1 (de) 2013-04-11
US20150053966A1 (en) 2015-02-26
TW201334070A (zh) 2013-08-16
DE102011084145A1 (de) 2013-04-11
CN103959478A (zh) 2014-07-30
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