CN103959478B - 制造金属氧化物层的方法，用该方法制造的层及其用途 - Google Patents

制造金属氧化物层的方法，用该方法制造的层及其用途 Download PDF

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CN103959478B
CN103959478B CN201280060170.8A CN201280060170A CN103959478B CN 103959478 B CN103959478 B CN 103959478B CN 201280060170 A CN201280060170 A CN 201280060170A CN 103959478 B CN103959478 B CN 103959478B
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metal oxide
metal
oxide layer
layer
oxide
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CN103959478A (zh
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J.施泰格尔
D.V.普哈姆
A.诺依曼
A.默库洛夫
A.霍佩
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Evonik Operations GmbH
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Evonik Degussa GmbH
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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CN201280060170.8A 2011-10-07 2012-09-12 制造金属氧化物层的方法，用该方法制造的层及其用途 Expired - Fee Related CN103959478B (zh)

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Application Number Priority Date Filing Date Title
DE102011084145.8 2011-10-07
DE102011084145A DE102011084145A1 (de) 2011-10-07 2011-10-07 Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung
PCT/EP2012/067804 WO2013050221A1 (de) 2011-10-07 2012-09-12 Verfahren zur herstellung von hochperformanten und elektrisch stabilen, halbleitenden metalloxidschichten, nach dem verfahren hergestellte schichten und deren verwendung

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CN103959478A CN103959478A (zh) 2014-07-30
CN103959478B true CN103959478B (zh) 2016-10-26

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US (1) US9059299B2 (enExample)
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DE (1) DE102011084145A1 (enExample)
IN (1) IN2014CN03328A (enExample)
RU (1) RU2601210C2 (enExample)
TW (1) TWI555088B (enExample)
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RU2014118033A (ru) 2015-11-27
KR102060492B1 (ko) 2020-02-11
US20150053966A1 (en) 2015-02-26
CN103959478A (zh) 2014-07-30
EP2748857B1 (de) 2018-06-13
WO2013050221A1 (de) 2013-04-11
KR20140072148A (ko) 2014-06-12
JP2015501529A (ja) 2015-01-15
US9059299B2 (en) 2015-06-16
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TW201334070A (zh) 2013-08-16
DE102011084145A1 (de) 2013-04-11

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