RU2601210C2 - Способ изготовления высокоэффективных и стабильных в электрическом отношении полупроводниковых слоев оксидов металлов, слои, изготовленные по этому способу, и их применение - Google Patents

Способ изготовления высокоэффективных и стабильных в электрическом отношении полупроводниковых слоев оксидов металлов, слои, изготовленные по этому способу, и их применение Download PDF

Info

Publication number
RU2601210C2
RU2601210C2 RU2014118033/28A RU2014118033A RU2601210C2 RU 2601210 C2 RU2601210 C2 RU 2601210C2 RU 2014118033/28 A RU2014118033/28 A RU 2014118033/28A RU 2014118033 A RU2014118033 A RU 2014118033A RU 2601210 C2 RU2601210 C2 RU 2601210C2
Authority
RU
Russia
Prior art keywords
metal oxide
layer
oxide
liquid phase
metal
Prior art date
Application number
RU2014118033/28A
Other languages
English (en)
Russian (ru)
Other versions
RU2014118033A (ru
Inventor
Юрген ШТАЙГЕР
Дуи Ву ПАМ
Анита НОЙМАНН
Алексей МЕРКУЛОВ
Арне ХОППЕ
Original Assignee
Эвоник Дегусса Гмбх
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Эвоник Дегусса Гмбх filed Critical Эвоник Дегусса Гмбх
Publication of RU2014118033A publication Critical patent/RU2014118033A/ru
Application granted granted Critical
Publication of RU2601210C2 publication Critical patent/RU2601210C2/ru

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02472—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Laminated Bodies (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
RU2014118033/28A 2011-10-07 2012-09-12 Способ изготовления высокоэффективных и стабильных в электрическом отношении полупроводниковых слоев оксидов металлов, слои, изготовленные по этому способу, и их применение RU2601210C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102011084145.8 2011-10-07
DE102011084145A DE102011084145A1 (de) 2011-10-07 2011-10-07 Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung
PCT/EP2012/067804 WO2013050221A1 (de) 2011-10-07 2012-09-12 Verfahren zur herstellung von hochperformanten und elektrisch stabilen, halbleitenden metalloxidschichten, nach dem verfahren hergestellte schichten und deren verwendung

Publications (2)

Publication Number Publication Date
RU2014118033A RU2014118033A (ru) 2015-11-27
RU2601210C2 true RU2601210C2 (ru) 2016-10-27

Family

ID=46832402

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2014118033/28A RU2601210C2 (ru) 2011-10-07 2012-09-12 Способ изготовления высокоэффективных и стабильных в электрическом отношении полупроводниковых слоев оксидов металлов, слои, изготовленные по этому способу, и их применение

Country Status (10)

Country Link
US (1) US9059299B2 (enExample)
EP (1) EP2748857B1 (enExample)
JP (1) JP6192646B2 (enExample)
KR (1) KR102060492B1 (enExample)
CN (1) CN103959478B (enExample)
DE (1) DE102011084145A1 (enExample)
IN (1) IN2014CN03328A (enExample)
RU (1) RU2601210C2 (enExample)
TW (1) TWI555088B (enExample)
WO (1) WO2013050221A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010031895A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102012209918A1 (de) 2012-06-13 2013-12-19 Evonik Industries Ag Verfahren zur Herstellung Indiumoxid-haltiger Schichten
DE102013212018A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Metalloxid-Prekursoren, sie enthaltende Beschichtungszusammensetzungen, und ihre Verwendung
DE102013109451B9 (de) 2013-08-30 2017-07-13 Osram Oled Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
EP2874187B1 (en) 2013-11-15 2020-01-01 Evonik Operations GmbH Low contact resistance thin film transistor
DE102014202718A1 (de) 2014-02-14 2015-08-20 Evonik Degussa Gmbh Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung
US10892327B2 (en) 2015-09-14 2021-01-12 University College Cork Semi-metal rectifying junction
US9515158B1 (en) 2015-10-20 2016-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with insertion layer and method for manufacturing the same
DE102015121067B4 (de) * 2015-12-03 2018-10-18 Technische Universität Dresden Verfahren zur Reparaturvorbereitung von Faser-Kunststoff-Verbünden
GB2549951B (en) * 2016-05-03 2019-11-20 Metodiev Lavchiev Ventsislav Light emitting structures and systems on the basis of group-IV material(s) for the ultra violet and visible spectral range
KR101914835B1 (ko) * 2016-11-18 2018-11-02 아주대학교산학협력단 금속산화물 이종 접합 구조, 이의 제조방법 및 이를 포함하는 박막트랜지스터
CN108396312B (zh) * 2018-01-19 2020-04-17 东华大学 一种快速制备高平整度金属氧化物薄膜的方法
WO2019200164A1 (en) * 2018-04-11 2019-10-17 The Regents Of The University Of California Devices and methods for detecting/discriminating complementary and mismatched nucleic acids using ultrathin film field-effect transistors
US11282966B2 (en) 2019-03-06 2022-03-22 Hewlett-Packard Development Company, L.P. Semiconductor materials
KR102867483B1 (ko) * 2023-04-21 2025-10-14 한국과학기술원 고압 전자기파 유도가열 방법
KR102829512B1 (ko) * 2023-04-28 2025-07-03 충북대학교 산학협력단 표면 처리 공정을 포함하는 박막 트랜지스터 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2004134698A (ru) * 2004-11-29 2006-05-10 Федеральное Государственное Унитарное Предпри тие"Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (НИФХИ им. Л.Я. Карпова) (RU) Тонкопленочный материал диэлектрика затвора с высокой диэлектрической проницаемостью и способ его получения

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06136162A (ja) 1992-10-21 1994-05-17 Fujimori Kogyo Kk 金属酸化物薄膜の形成方法
JPH09157855A (ja) 1995-12-06 1997-06-17 Kansai Shin Gijutsu Kenkyusho:Kk 金属酸化物薄膜の形成方法
CN1101352C (zh) 2000-07-15 2003-02-12 昆明理工大学 铟锡氧化物薄膜溶胶—凝胶制备方法
US7604839B2 (en) * 2000-07-31 2009-10-20 Los Alamos National Security, Llc Polymer-assisted deposition of films
US20060088962A1 (en) 2004-10-22 2006-04-27 Herman Gregory S Method of forming a solution processed transistor having a multilayer dielectric
JP4021435B2 (ja) * 2004-10-25 2007-12-12 ヒタチグローバルストレージテクノロジーズネザーランドビーブイ 垂直磁気記録媒体、その製造方法及び磁気記録再生装置
US7374984B2 (en) * 2004-10-29 2008-05-20 Randy Hoffman Method of forming a thin film component
JP2007073704A (ja) 2005-09-06 2007-03-22 Canon Inc 半導体薄膜
JP2007073074A (ja) * 2006-12-04 2007-03-22 Omron Corp 医療情報処理システムおよび医療情報処理方法、並びに、情報処理装置および情報処理方法
DE102007018431A1 (de) * 2007-04-19 2008-10-30 Evonik Degussa Gmbh Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor
US7982216B2 (en) * 2007-11-15 2011-07-19 Fujifilm Corporation Thin film field effect transistor with amorphous oxide active layer and display using the same
JP5250322B2 (ja) * 2008-07-10 2013-07-31 富士フイルム株式会社 金属酸化物膜とその製造方法、及び半導体装置
JP2010050165A (ja) * 2008-08-19 2010-03-04 Sumitomo Chemical Co Ltd 半導体装置、半導体装置の製造方法、トランジスタ基板、発光装置、および、表示装置
DE102008058040A1 (de) 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten
JP2010120270A (ja) * 2008-11-19 2010-06-03 Seiko Epson Corp 液体噴射ヘッド、液体噴射装置、アクチュエータ装置及び液体噴射ヘッドの製造方法
DE102009009338A1 (de) 2009-02-17 2010-08-26 Evonik Degussa Gmbh Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102009009337A1 (de) 2009-02-17 2010-08-19 Evonik Degussa Gmbh Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung
JP2010258057A (ja) * 2009-04-22 2010-11-11 Konica Minolta Holdings Inc 金属酸化物半導体、その製造方法、及びそれを用いた薄膜トランジスタ
JP5508518B2 (ja) 2009-04-24 2014-06-04 パナソニック株式会社 酸化物半導体
KR20100130850A (ko) 2009-06-04 2010-12-14 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
DE102009028802B3 (de) 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
DE102009028801B3 (de) 2009-08-21 2011-04-14 Evonik Degussa Gmbh Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung
WO2011065329A1 (ja) * 2009-11-27 2011-06-03 株式会社日立製作所 酸化物半導体装置およびその製造方法
DE102009054997B3 (de) 2009-12-18 2011-06-01 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
KR20120123343A (ko) * 2009-12-18 2012-11-08 바스프 에스이 저온에서 용액으로부터 가공될 수 있는 유전체를 갖는 기계적 가요성 중합체 기판 상의 금속 산화물 전계 효과 트랜지스터
KR20110106225A (ko) * 2010-03-22 2011-09-28 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 상기 박막 트랜지스터를 포함하는 표시장치
KR101669953B1 (ko) * 2010-03-26 2016-11-09 삼성전자 주식회사 산화물 박막, 산화물 박막의 형성 방법 및 산화물 박막을 포함하는 전자 소자
DE102010031895A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010031592A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010043668B4 (de) 2010-11-10 2012-06-21 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
JP6150038B2 (ja) * 2013-03-13 2017-06-21 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波トランスデューサー及び超音波デバイス

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2004134698A (ru) * 2004-11-29 2006-05-10 Федеральное Государственное Унитарное Предпри тие"Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (НИФХИ им. Л.Я. Карпова) (RU) Тонкопленочный материал диэлектрика затвора с высокой диэлектрической проницаемостью и способ его получения

Also Published As

Publication number Publication date
TWI555088B (zh) 2016-10-21
US9059299B2 (en) 2015-06-16
CN103959478B (zh) 2016-10-26
EP2748857A1 (de) 2014-07-02
IN2014CN03328A (enExample) 2015-07-03
KR20140072148A (ko) 2014-06-12
JP2015501529A (ja) 2015-01-15
WO2013050221A1 (de) 2013-04-11
US20150053966A1 (en) 2015-02-26
TW201334070A (zh) 2013-08-16
DE102011084145A1 (de) 2013-04-11
CN103959478A (zh) 2014-07-30
EP2748857B1 (de) 2018-06-13
KR102060492B1 (ko) 2020-02-11
JP6192646B2 (ja) 2017-09-06
RU2014118033A (ru) 2015-11-27

Similar Documents

Publication Publication Date Title
RU2601210C2 (ru) Способ изготовления высокоэффективных и стабильных в электрическом отношении полупроводниковых слоев оксидов металлов, слои, изготовленные по этому способу, и их применение
JP6141362B2 (ja) 半導体の酸化インジウム膜の製造法、該方法に従って製造された酸化インジウム膜及び該膜の使用
TWI483925B (zh) 含烷氧銦的組成物，彼之製法以及彼之應用
KR101725573B1 (ko) 금속 산화물-함유 층의 제조 방법
JP5769709B2 (ja) 酸化インジウム含有層の製造方法
KR20120095422A (ko) 산화인듐 함유 층의 제조 방법, 상기 방법에 의해 제조된 산화인듐 함유 층 및 그의 용도
TW201304008A (zh) 非晶質氧化物薄膜的製造方法及薄膜電晶體
KR102032168B1 (ko) 산화 인듐-함유 층 제조 방법
Gong et al. Solution processable high quality ZrO2 dielectric films for low operation voltage and flexible organic thin film transistor applications
Zhu et al. A simple, low cost ink system for drop-on-demand printing high performance metal oxide dielectric film at low temperature

Legal Events

Date Code Title Description
MM4A The patent is invalid due to non-payment of fees

Effective date: 20190913