DE102011084145A1 - Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung - Google Patents

Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung Download PDF

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DE102011084145A1
DE102011084145A1 DE102011084145A DE102011084145A DE102011084145A1 DE 102011084145 A1 DE102011084145 A1 DE 102011084145A1 DE 102011084145 A DE102011084145 A DE 102011084145A DE 102011084145 A DE102011084145 A DE 102011084145A DE 102011084145 A1 DE102011084145 A1 DE 102011084145A1
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Prior art keywords
metal oxide
oxide layer
layer
metal
liquid phase
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Ceased
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DE102011084145A
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German (de)
English (en)
Inventor
Dr. Steiger Jürgen
Dr. Pham Duy Vu
Anita Neumann
Dr. Merkulov Alexey
Dr. Hoppe Arne
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Evonik Operations GmbH
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Evonik Degussa GmbH
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Priority to DE102011084145A priority Critical patent/DE102011084145A1/de
Priority to EP12758475.3A priority patent/EP2748857B1/de
Priority to KR1020147011596A priority patent/KR102060492B1/ko
Priority to IN3328CHN2014 priority patent/IN2014CN03328A/en
Priority to US14/348,948 priority patent/US9059299B2/en
Priority to RU2014118033/28A priority patent/RU2601210C2/ru
Priority to CN201280060170.8A priority patent/CN103959478B/zh
Priority to JP2014533817A priority patent/JP6192646B2/ja
Priority to PCT/EP2012/067804 priority patent/WO2013050221A1/de
Priority to TW101136507A priority patent/TWI555088B/zh
Publication of DE102011084145A1 publication Critical patent/DE102011084145A1/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
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DE102011084145A 2011-10-07 2011-10-07 Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung Ceased DE102011084145A1 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE102011084145A DE102011084145A1 (de) 2011-10-07 2011-10-07 Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung
EP12758475.3A EP2748857B1 (de) 2011-10-07 2012-09-12 Verfahren zur herstellung von hochperformanten und elektrisch stabilen, halbleitenden metalloxidschichten, nach dem verfahren hergestellte schichten und deren verwendung
KR1020147011596A KR102060492B1 (ko) 2011-10-07 2012-09-12 고성능 및 전기 안정성의 반전도성 금속 산화물 층의 제조 방법, 및 상기 방법에 따라 제조된 층 및 그의 용도
IN3328CHN2014 IN2014CN03328A (enExample) 2011-10-07 2012-09-12
US14/348,948 US9059299B2 (en) 2011-10-07 2012-09-12 Method for producing high-performing and electrically stable semi-conductive metal oxide layers, layers produced according to the method and use thereof
RU2014118033/28A RU2601210C2 (ru) 2011-10-07 2012-09-12 Способ изготовления высокоэффективных и стабильных в электрическом отношении полупроводниковых слоев оксидов металлов, слои, изготовленные по этому способу, и их применение
CN201280060170.8A CN103959478B (zh) 2011-10-07 2012-09-12 制造金属氧化物层的方法，用该方法制造的层及其用途
JP2014533817A JP6192646B2 (ja) 2011-10-07 2012-09-12 高性能な電気的に安定した半導電性の金属酸化物層の製造法、当該方法により製造された層および当該層の使用
PCT/EP2012/067804 WO2013050221A1 (de) 2011-10-07 2012-09-12 Verfahren zur herstellung von hochperformanten und elektrisch stabilen, halbleitenden metalloxidschichten, nach dem verfahren hergestellte schichten und deren verwendung
TW101136507A TWI555088B (zh) 2011-10-07 2012-10-03 製造高效能與電安定之半導體金屬氧化物層的方法，此方法製造的層以及其應用

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DE102011084145A DE102011084145A1 (de) 2011-10-07 2011-10-07 Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung

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DE102011084145A1 true DE102011084145A1 (de) 2013-04-11

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DE102011084145A Ceased DE102011084145A1 (de) 2011-10-07 2011-10-07 Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung

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US (1) US9059299B2 (enExample)
EP (1) EP2748857B1 (enExample)
JP (1) JP6192646B2 (enExample)
KR (1) KR102060492B1 (enExample)
CN (1) CN103959478B (enExample)
DE (1) DE102011084145A1 (enExample)
IN (1) IN2014CN03328A (enExample)
RU (1) RU2601210C2 (enExample)
TW (1) TWI555088B (enExample)
WO (1) WO2013050221A1 (enExample)

Cited By (2)

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DE102013109451A1 (de) 2013-08-30 2015-01-29 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102015121067A1 (de) * 2015-12-03 2017-06-08 Technische Universität Dresden Verfahren zur Reparaturvorbereitung von Faser-Kunststoff-Verbünden

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DE102010031895A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102012209918A1 (de) 2012-06-13 2013-12-19 Evonik Industries Ag Verfahren zur Herstellung Indiumoxid-haltiger Schichten
DE102013212018A1 (de) * 2013-06-25 2015-01-08 Evonik Industries Ag Metalloxid-Prekursoren, sie enthaltende Beschichtungszusammensetzungen, und ihre Verwendung
EP2874187B1 (en) 2013-11-15 2020-01-01 Evonik Operations GmbH Low contact resistance thin film transistor
DE102014202718A1 (de) 2014-02-14 2015-08-20 Evonik Degussa Gmbh Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung
EP3350115A1 (en) 2015-09-14 2018-07-25 University College Cork Semi-metal rectifying junction
US9515158B1 (en) * 2015-10-20 2016-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with insertion layer and method for manufacturing the same
GB2549951B (en) * 2016-05-03 2019-11-20 Metodiev Lavchiev Ventsislav Light emitting structures and systems on the basis of group-IV material(s) for the ultra violet and visible spectral range
KR101914835B1 (ko) * 2016-11-18 2018-11-02 아주대학교산학협력단 금속산화물 이종 접합 구조, 이의 제조방법 및 이를 포함하는 박막트랜지스터
CN108396312B (zh) * 2018-01-19 2020-04-17 东华大学 一种快速制备高平整度金属氧化物薄膜的方法
US12025581B2 (en) 2018-04-11 2024-07-02 The Regents Of The University Of California Devices and methods for detecting/discriminating complementary and mismatched nucleic acids using ultrathin film field-effect transistors
WO2020180322A1 (en) 2019-03-06 2020-09-10 Hewlett-Packard Development Company, L.P. Semiconductor materials
KR102867483B1 (ko) * 2023-04-21 2025-10-14 한국과학기술원 고압 전자기파 유도가열 방법
KR102829512B1 (ko) * 2023-04-28 2025-07-03 충북대학교 산학협력단 표면 처리 공정을 포함하는 박막 트랜지스터 제조 방법

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