JP6161620B2 - ナノ結晶コア及び絶縁コートを有するナノ結晶シェルを有する半導体構造 - Google Patents

ナノ結晶コア及び絶縁コートを有するナノ結晶シェルを有する半導体構造 Download PDF

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JP6161620B2
JP6161620B2 JP2014541055A JP2014541055A JP6161620B2 JP 6161620 B2 JP6161620 B2 JP 6161620B2 JP 2014541055 A JP2014541055 A JP 2014541055A JP 2014541055 A JP2014541055 A JP 2014541055A JP 6161620 B2 JP6161620 B2 JP 6161620B2
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shell
core
nanocrystal
nanocrystalline
anisotropic
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JP2015504596A5 (enExample
JP2015504596A (ja
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ジュアニータ カーティン、
ジュアニータ カーティン、
マシュー ジェイ． カリロ、
マシュー ジェイ． カリロ、
スティーブン ヒューズ、
スティーブン ヒューズ、
ブライアン テオバルト、
ブライアン テオバルト、
コリン リーズ、
コリン リーズ、
オン−ホ パク、
オン−ホ パク、
ジェオルジェタ マッソン、
ジェオルジェタ マッソン、
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パシフィック ライト テクノロジーズ コーポレーション
パシフィック ライト テクノロジーズ コーポレーション
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JP2014541055A 2011-11-09 2012-09-14 ナノ結晶コア及び絶縁コートを有するナノ結晶シェルを有する半導体構造 Active JP6161620B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201161557653P 2011-11-09 2011-11-09
US61/557,653 2011-11-09
US201161558974P 2011-11-11 2011-11-11
US201161558964P 2011-11-11 2011-11-11
US61/558,964 2011-11-11
US61/558,974 2011-11-11
US13/485,761 US20130112941A1 (en) 2011-11-09 2012-05-31 Semiconductor structure having nanocrystalline core and nanocrystalline shell with insulator coating
US13/485,761 2012-05-31
PCT/US2012/055626 WO2013070321A1 (en) 2011-11-09 2012-09-14 Semiconductor structure having nanocrystalline core and nanocrystalline shell with insulator coating

Publications (3)

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JP2015504596A JP2015504596A (ja) 2015-02-12
JP2015504596A5 JP2015504596A5 (enExample) 2015-11-05
JP6161620B2 true JP6161620B2 (ja) 2017-07-12

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JP2014541055A Active JP6161620B2 (ja) 2011-11-09 2012-09-14 ナノ結晶コア及び絶縁コートを有するナノ結晶シェルを有する半導体構造
JP2014541053A Pending JP2015504459A (ja) 2011-11-09 2012-09-14 マトリックス中に半導体構造が埋め込まれたコンポジット
JP2014541054A Pending JP2014534322A (ja) 2011-11-09 2012-09-14 ナノ結晶コア及びナノ結晶シェルを有する半導体構造

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JP2014541053A Pending JP2015504459A (ja) 2011-11-09 2012-09-14 マトリックス中に半導体構造が埋め込まれたコンポジット
JP2014541054A Pending JP2014534322A (ja) 2011-11-09 2012-09-14 ナノ結晶コア及びナノ結晶シェルを有する半導体構造

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US (5) US20130112942A1 (enExample)
EP (7) EP3879585A1 (enExample)
JP (3) JP6161620B2 (enExample)
KR (3) KR102009927B1 (enExample)
CN (3) CN104024370B (enExample)
WO (3) WO2013070321A1 (enExample)

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JP2016172829A (ja) * 2015-03-17 2016-09-29 コニカミノルタ株式会社 被覆半導体ナノ粒子およびその製造方法。
US10266760B2 (en) 2015-05-13 2019-04-23 Osram Opto Semiconductors Gmbh Composition of, and method for forming, a semiconductor structure with multiple insulator coatings
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KR102558128B1 (ko) * 2015-07-07 2023-07-21 루미리즈 홀딩 비.브이. 광을 방출하는 디바이스
JP2018534784A (ja) * 2015-07-30 2018-11-22 パシフィック ライト テクノロジーズ コーポレイション 低カドミウムナノ結晶量子ドットヘテロ構造
CN105255479B (zh) * 2015-09-28 2017-06-20 上海皇广光电科技有限公司 一种胶体量子点荧光粉复合薄膜制备方法
TW201729901A (zh) * 2015-12-02 2017-09-01 奈米系統股份有限公司 於顯示裝置中基於量子點之色轉換層
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