DE102006060366B8 - Verfahren zur Herstellung von von einer Matrix abgedeckten Quantenpunkten - Google Patents
Verfahren zur Herstellung von von einer Matrix abgedeckten Quantenpunkten Download PDFInfo
- Publication number
- DE102006060366B8 DE102006060366B8 DE102006060366A DE102006060366A DE102006060366B8 DE 102006060366 B8 DE102006060366 B8 DE 102006060366B8 DE 102006060366 A DE102006060366 A DE 102006060366A DE 102006060366 A DE102006060366 A DE 102006060366A DE 102006060366 B8 DE102006060366 B8 DE 102006060366B8
- Authority
- DE
- Germany
- Prior art keywords
- matrix
- preparation
- quantum dots
- dots covered
- covered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011159 matrix material Substances 0.000 title 1
- 239000002096 quantum dot Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/02—Pretreatment of the material to be coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006060366A DE102006060366B8 (de) | 2006-12-16 | 2006-12-16 | Verfahren zur Herstellung von von einer Matrix abgedeckten Quantenpunkten |
US12/519,357 US8334154B2 (en) | 2006-12-16 | 2007-12-11 | Method for the production of quantum dots embedded in a matrix, and quantum dots embedded in a matrix produced using the method |
PCT/DE2007/002230 WO2008074298A1 (de) | 2006-12-16 | 2007-12-11 | Verfahren zur herstellung von in einer matrix eingebetteten quantenpunkten und mit dem verfahren hergestellte in einer matrix eingebettete quantenpunkte |
JP2009540597A JP2010513032A (ja) | 2006-12-16 | 2007-12-11 | マトリックス中に埋め込まれた量子ドットの製造方法及び前記方法を用いて製造されたマトリックス中に埋め込まれた量子ドット |
EP07856081A EP2104751A1 (de) | 2006-12-16 | 2007-12-11 | Verfahren zur herstellung von in einer matrix eingebetteten quantenpunkten und mit dem verfahren hergestellte in einer matrix eingebettete quantenpunkte |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006060366A DE102006060366B8 (de) | 2006-12-16 | 2006-12-16 | Verfahren zur Herstellung von von einer Matrix abgedeckten Quantenpunkten |
Publications (3)
Publication Number | Publication Date |
---|---|
DE102006060366A1 DE102006060366A1 (de) | 2008-06-19 |
DE102006060366B4 DE102006060366B4 (de) | 2012-08-16 |
DE102006060366B8 true DE102006060366B8 (de) | 2013-08-01 |
Family
ID=39260763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102006060366A Expired - Fee Related DE102006060366B8 (de) | 2006-12-16 | 2006-12-16 | Verfahren zur Herstellung von von einer Matrix abgedeckten Quantenpunkten |
Country Status (5)
Country | Link |
---|---|
US (1) | US8334154B2 (de) |
EP (1) | EP2104751A1 (de) |
JP (1) | JP2010513032A (de) |
DE (1) | DE102006060366B8 (de) |
WO (1) | WO2008074298A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102255143B (zh) | 2005-06-30 | 2014-08-20 | L.皮尔·德罗什蒙 | 电子元件及制造方法 |
US8030664B2 (en) * | 2006-12-15 | 2011-10-04 | Samsung Led Co., Ltd. | Light emitting device |
ES2311431B2 (es) * | 2008-06-06 | 2009-07-21 | Universidad Politecnica De Madrid | Procedimiento de fabricacion de dispositivos optoelectronicos de banda intermedia basados en tecnologia de lamina delgada. |
US9123768B2 (en) | 2010-11-03 | 2015-09-01 | L. Pierre de Rochemont | Semiconductor chip carriers with monolithically integrated quantum dot devices and method of manufacture thereof |
US9490414B2 (en) | 2011-08-31 | 2016-11-08 | L. Pierre de Rochemont | Fully integrated thermoelectric devices and their application to aerospace de-icing systems |
US20130112942A1 (en) | 2011-11-09 | 2013-05-09 | Juanita Kurtin | Composite having semiconductor structures embedded in a matrix |
US9159872B2 (en) | 2011-11-09 | 2015-10-13 | Pacific Light Technologies Corp. | Semiconductor structure having nanocrystalline core and nanocrystalline shell |
US8889457B2 (en) | 2012-12-13 | 2014-11-18 | Pacific Light Technologies Corp. | Composition having dispersion of nano-particles therein and methods of fabricating same |
DE202013007135U1 (de) | 2013-08-09 | 2013-09-26 | WOBEK Oberflächenschutz GmbH | Hochwasserschutzanlage |
JP2017502526A (ja) * | 2013-10-04 | 2017-01-19 | キング アブドゥラー ユニバーシティ オブ サイエンス アンド テクノロジー | 量子ドットを作製するためのシステム及び方法<関連出願からの優先権主張> 本願は、2013年10月4日に出願された、出願番号が61/886,837であり「量子ドットを作製するためのシステム及び方法」と題する同時係属中の米国仮出願からの優先権を主張するものであり、参照によりその全体が本明細書に組み込まれる。 本願は、2013年10月14日に出願された、出願番号が61/890,536であり「量子ドットを作製するためのシステム及び方法」と題する同時係属中の米国仮出願からの優先権を主張するものであり、参照によりその全体が本明細書に組み込まれる。 本願は、2014年7月15日に出願された、出願番号が62/024,490であり「量子ドットを作製するためのシステム及び方法」と題する同時係属中の米国仮出願からの優先権を主張するものであり、参照によりその全体が本明細書に組み込まれる。 |
CN115759267A (zh) * | 2015-11-27 | 2023-03-07 | 光子公司 | 用于与自旋存储的量子信息交互的系统、装置及方法 |
CN111979526B (zh) * | 2020-08-21 | 2022-10-28 | 南京工程学院 | 一种用于制造硫化锌、硫化铅和硫化镉量子点的方法及设备 |
KR102633783B1 (ko) * | 2021-07-19 | 2024-02-02 | 성균관대학교산학협력단 | 양자점의 개질 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69411945T2 (de) * | 1993-11-15 | 1998-11-26 | Isis Innovation | Herstellung von quanteninselnpulver gleichmässiger grösse |
US20030129311A1 (en) * | 2002-01-10 | 2003-07-10 | Wen-Chiang Huang | Method of producing quantum-dot powder and film via templating by a 2-d ordered array of air bubbles in a polymer |
US20040168626A1 (en) * | 2001-07-20 | 2004-09-02 | Peter Moeck | Process for forming semiconductor quantum dots with superior structural and phological stability |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3235144B2 (ja) | 1991-08-02 | 2001-12-04 | ソニー株式会社 | 量子箱列の作製方法 |
JP2846567B2 (ja) * | 1993-09-03 | 1999-01-13 | 日本碍子株式会社 | 多孔質焼結体及び固体電解質型燃料電池 |
US5656329A (en) * | 1995-03-13 | 1997-08-12 | Texas Instruments Incorporated | Chemical vapor deposition of metal oxide films through ester elimination reactions |
GB9515439D0 (en) * | 1995-07-27 | 1995-09-27 | Isis Innovation | Method of producing metal quantum dots |
KR100301116B1 (ko) * | 1998-12-02 | 2001-10-20 | 오길록 | 양자점 구조를 갖는 화합물반도체 기판의 제조 방법 |
KR100331687B1 (ko) | 1999-12-07 | 2002-04-09 | 오길록 | 자발형성 양자점과 전류차단층의 자기정렬 성장을 위한반도체 소자 제조방법 |
JP3517698B2 (ja) | 2000-03-03 | 2004-04-12 | 独立行政法人産業技術総合研究所 | ナノ粒子分散構造体及びその積層体 |
US6544870B2 (en) | 2001-04-18 | 2003-04-08 | Kwangju Institute Of Science And Technology | Silicon nitride film comprising amorphous silicon quantum dots embedded therein, its fabrication method and light-emitting device using the same |
US6623559B2 (en) * | 2001-12-10 | 2003-09-23 | Nanotek Instruments, Inc. | Method for the production of semiconductor quantum particles |
JP4263581B2 (ja) | 2002-10-30 | 2009-05-13 | ハンヤン ハク ウォン カンパニー,リミテッド | 金属薄膜または金属粉末を利用した金属酸化物量子点形成方法 |
JP4825965B2 (ja) | 2004-09-09 | 2011-11-30 | 国立大学法人電気通信大学 | 量子ドットの形成方法 |
-
2006
- 2006-12-16 DE DE102006060366A patent/DE102006060366B8/de not_active Expired - Fee Related
-
2007
- 2007-12-11 WO PCT/DE2007/002230 patent/WO2008074298A1/de active Application Filing
- 2007-12-11 JP JP2009540597A patent/JP2010513032A/ja active Pending
- 2007-12-11 EP EP07856081A patent/EP2104751A1/de not_active Ceased
- 2007-12-11 US US12/519,357 patent/US8334154B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69411945T2 (de) * | 1993-11-15 | 1998-11-26 | Isis Innovation | Herstellung von quanteninselnpulver gleichmässiger grösse |
US20040168626A1 (en) * | 2001-07-20 | 2004-09-02 | Peter Moeck | Process for forming semiconductor quantum dots with superior structural and phological stability |
US20030129311A1 (en) * | 2002-01-10 | 2003-07-10 | Wen-Chiang Huang | Method of producing quantum-dot powder and film via templating by a 2-d ordered array of air bubbles in a polymer |
Also Published As
Publication number | Publication date |
---|---|
JP2010513032A (ja) | 2010-04-30 |
WO2008074298A1 (de) | 2008-06-26 |
EP2104751A1 (de) | 2009-09-30 |
US8334154B2 (en) | 2012-12-18 |
US20100108986A1 (en) | 2010-05-06 |
DE102006060366A1 (de) | 2008-06-19 |
DE102006060366B4 (de) | 2012-08-16 |
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