JP6080447B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

Info

Publication number
JP6080447B2
JP6080447B2 JP2012203185A JP2012203185A JP6080447B2 JP 6080447 B2 JP6080447 B2 JP 6080447B2 JP 2012203185 A JP2012203185 A JP 2012203185A JP 2012203185 A JP2012203185 A JP 2012203185A JP 6080447 B2 JP6080447 B2 JP 6080447B2
Authority
JP
Japan
Prior art keywords
current
photoelectric conversion
terminal
conversion element
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012203185A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013138174A (ja
JP2013138174A5 (enExample
Inventor
秀央 小林
秀央 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012203185A priority Critical patent/JP6080447B2/ja
Priority to US13/686,319 priority patent/US20130140440A1/en
Publication of JP2013138174A publication Critical patent/JP2013138174A/ja
Publication of JP2013138174A5 publication Critical patent/JP2013138174A5/ja
Application granted granted Critical
Publication of JP6080447B2 publication Critical patent/JP6080447B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/288—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1847—Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Landscapes

  • Light Receiving Elements (AREA)
JP2012203185A 2011-12-01 2012-09-14 光電変換装置 Expired - Fee Related JP6080447B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012203185A JP6080447B2 (ja) 2011-12-01 2012-09-14 光電変換装置
US13/686,319 US20130140440A1 (en) 2011-12-01 2012-11-27 Photoelectric converting apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011263704 2011-12-01
JP2011263704 2011-12-01
JP2012203185A JP6080447B2 (ja) 2011-12-01 2012-09-14 光電変換装置

Publications (3)

Publication Number Publication Date
JP2013138174A JP2013138174A (ja) 2013-07-11
JP2013138174A5 JP2013138174A5 (enExample) 2015-11-05
JP6080447B2 true JP6080447B2 (ja) 2017-02-15

Family

ID=48523326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012203185A Expired - Fee Related JP6080447B2 (ja) 2011-12-01 2012-09-14 光電変換装置

Country Status (2)

Country Link
US (1) US20130140440A1 (enExample)
JP (1) JP6080447B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014175553A (ja) 2013-03-11 2014-09-22 Canon Inc 固体撮像装置およびカメラ
JP2014216349A (ja) 2013-04-22 2014-11-17 キヤノン株式会社 光電変換装置
JP6223055B2 (ja) 2013-08-12 2017-11-01 キヤノン株式会社 光電変換装置
JP6245997B2 (ja) 2014-01-16 2017-12-13 キヤノン株式会社 固体撮像装置及び撮像システム
JP6246004B2 (ja) 2014-01-30 2017-12-13 キヤノン株式会社 固体撮像装置
JP6057931B2 (ja) 2014-02-10 2017-01-11 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
JP6412328B2 (ja) 2014-04-01 2018-10-24 キヤノン株式会社 固体撮像装置およびカメラ
JP6619631B2 (ja) 2015-11-30 2019-12-11 キヤノン株式会社 固体撮像装置および撮像システム
JP6889571B2 (ja) 2017-02-24 2021-06-18 キヤノン株式会社 撮像装置および撮像システム
WO2020045278A1 (en) 2018-08-31 2020-03-05 Canon Kabushiki Kaisha Imaging device with motion dependent pixel binning
JP6986046B2 (ja) 2019-05-30 2021-12-22 キヤノン株式会社 光電変換装置および機器
JP7345301B2 (ja) 2019-07-18 2023-09-15 キヤノン株式会社 光電変換装置および機器
JP7303682B2 (ja) 2019-07-19 2023-07-05 キヤノン株式会社 光電変換装置及び撮像システム
JP7374639B2 (ja) 2019-07-19 2023-11-07 キヤノン株式会社 光電変換装置及び撮像システム
JP7171649B2 (ja) 2020-05-15 2022-11-15 キヤノン株式会社 撮像装置および撮像システム
JP7474123B2 (ja) 2020-06-15 2024-04-24 キヤノン株式会社 光電変換装置、光電変換システム及び移動体
US11736813B2 (en) 2020-07-27 2023-08-22 Canon Kabushiki Kaisha Imaging device and equipment
JP7630298B2 (ja) 2021-02-25 2025-02-17 キヤノン株式会社 光電変換装置及び機器
JP2022144242A (ja) 2021-03-18 2022-10-03 キヤノン株式会社 光電変換装置、光電変換システムおよび移動体
JP7791653B2 (ja) 2021-03-18 2025-12-24 キヤノン株式会社 光電変換装置、基板及び機器
JP7706916B2 (ja) 2021-04-01 2025-07-14 キヤノン株式会社 光電変換装置
JP7755407B2 (ja) 2021-08-04 2025-10-16 キヤノン株式会社 光電変換装置
JP7419309B2 (ja) 2021-09-08 2024-01-22 キヤノン株式会社 固体撮像装置
JP7580362B2 (ja) 2021-11-12 2024-11-11 キヤノン株式会社 光電変換装置及び機器
JP7373542B2 (ja) 2021-12-06 2023-11-02 キヤノン株式会社 光電変換装置および機器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010045508A1 (en) * 1998-09-21 2001-11-29 Bart Dierickx Pixel structure for imaging devices
KR100666697B1 (ko) * 2003-10-20 2007-01-09 주식회사 애트랩 광센서 회로
JP4491323B2 (ja) * 2004-10-22 2010-06-30 富士フイルム株式会社 光電変換膜積層型カラー固体撮像装置
US7612322B2 (en) * 2007-02-15 2009-11-03 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Temperature-compensated high dynamic range optical receiver
JP5247299B2 (ja) * 2008-08-18 2013-07-24 キヤノン株式会社 光センサ、測光装置及びカメラシステム
JP5522932B2 (ja) * 2008-12-25 2014-06-18 キヤノン株式会社 光電変換装置及び光電変換装置の駆動方法
JP5495864B2 (ja) * 2010-03-08 2014-05-21 キヤノン株式会社 光電変換装置
JP2011238856A (ja) * 2010-05-12 2011-11-24 Canon Inc 光電変換装置
JP2014216349A (ja) * 2013-04-22 2014-11-17 キヤノン株式会社 光電変換装置

Also Published As

Publication number Publication date
JP2013138174A (ja) 2013-07-11
US20130140440A1 (en) 2013-06-06

Similar Documents

Publication Publication Date Title
JP2013138174A (ja) 光電変換装置
US8835828B2 (en) Photoelectric conversion apparatus
JP2014216349A (ja) 光電変換装置
JP5511541B2 (ja) 固体撮像装置及び固体撮像装置の駆動方法
US10762837B2 (en) Pixel circuit, a driving method thereof and a display apparatus
JP5495864B2 (ja) 光電変換装置
CN103975581B (zh) 光电转换器、光电转换器阵列和成像器件
US9681074B2 (en) Pixel circuit including compensation unit, driving method thereof and detector
CN101556962B (zh) 包括具有两个栅极的感应晶体管的图像传感器及操作方法
US6914228B2 (en) Solid-state imaging device
JP5522932B2 (ja) 光電変換装置及び光電変換装置の駆動方法
JP2015005752A (ja) イメージセンサで使用される埋め込みフォトダイオードの改良
CN113654657B (zh) 一种光电检测电路及其驱动方法、光电传感器
US7061033B2 (en) Solid-state imaging device
WO2022070655A1 (ja) フォトディテクタ、フォトディテクタアレイおよび駆動方法
US20130119240A1 (en) Photoelectric conversion cell and array, reading method therefor, and circuit thereof
CN110166671A (zh) 一种有源像素传感器及其控制方法、有源像素传感装置
CN114627788A (zh) 光电传感像素补偿电路、驱动方法及显示装置
JP7261098B2 (ja) 撮像装置
US9641775B2 (en) Imaging apparatus, imaging system, and driving method of imaging apparatus
CN114979515B (zh) 一种像素电路及其驱动方法、平板探测器
JP2012074447A (ja) 光センサ、および光センサアレイ
CN110198166A (zh) 一种像素电路及相应运行方法
Vygranenko et al. Driving scheme using MIS photosensor for luminance control of AMOLED pixel
JP6061556B2 (ja) 光電変換装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150910

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150910

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160420

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160531

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160727

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20161220

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170117

R151 Written notification of patent or utility model registration

Ref document number: 6080447

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

LAPS Cancellation because of no payment of annual fees