JP5959934B2 - トリミング回路、トリミング回路の駆動方法 - Google Patents

トリミング回路、トリミング回路の駆動方法 Download PDF

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Publication number
JP5959934B2
JP5959934B2 JP2012118206A JP2012118206A JP5959934B2 JP 5959934 B2 JP5959934 B2 JP 5959934B2 JP 2012118206 A JP2012118206 A JP 2012118206A JP 2012118206 A JP2012118206 A JP 2012118206A JP 5959934 B2 JP5959934 B2 JP 5959934B2
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Prior art keywords
transistor
electrode
electrically connected
storage node
insulating layer
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Expired - Fee Related
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JP2012118206A
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Japanese (ja)
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JP2013012724A5 (enExample
JP2013012724A (ja
Inventor
誠 兼安
誠 兼安
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Electronic Switches (AREA)
JP2012118206A 2011-05-27 2012-05-24 トリミング回路、トリミング回路の駆動方法 Expired - Fee Related JP5959934B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012118206A JP5959934B2 (ja) 2011-05-27 2012-05-24 トリミング回路、トリミング回路の駆動方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011119429 2011-05-27
JP2011119429 2011-05-27
JP2012118206A JP5959934B2 (ja) 2011-05-27 2012-05-24 トリミング回路、トリミング回路の駆動方法

Related Child Applications (1)

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JP2016123141A Division JP6285499B2 (ja) 2011-05-27 2016-06-22 半導体装置

Publications (3)

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JP2013012724A JP2013012724A (ja) 2013-01-17
JP2013012724A5 JP2013012724A5 (enExample) 2015-05-07
JP5959934B2 true JP5959934B2 (ja) 2016-08-02

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JP2012118206A Expired - Fee Related JP5959934B2 (ja) 2011-05-27 2012-05-24 トリミング回路、トリミング回路の駆動方法
JP2016123141A Active JP6285499B2 (ja) 2011-05-27 2016-06-22 半導体装置
JP2018016334A Active JP6487581B2 (ja) 2011-05-27 2018-02-01 半導体装置
JP2019029447A Active JP6709867B2 (ja) 2011-05-27 2019-02-21 半導体装置
JP2020090263A Active JP6765561B2 (ja) 2011-05-27 2020-05-25 半導体装置
JP2020154302A Active JP6925491B2 (ja) 2011-05-27 2020-09-15 半導体装置
JP2021127693A Active JP7213313B2 (ja) 2011-05-27 2021-08-03 半導体装置
JP2023004556A Active JP7427813B2 (ja) 2011-05-27 2023-01-16 半導体装置
JP2024008464A Active JP7661544B2 (ja) 2011-05-27 2024-01-24 半導体装置

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JP2016123141A Active JP6285499B2 (ja) 2011-05-27 2016-06-22 半導体装置
JP2018016334A Active JP6487581B2 (ja) 2011-05-27 2018-02-01 半導体装置
JP2019029447A Active JP6709867B2 (ja) 2011-05-27 2019-02-21 半導体装置
JP2020090263A Active JP6765561B2 (ja) 2011-05-27 2020-05-25 半導体装置
JP2020154302A Active JP6925491B2 (ja) 2011-05-27 2020-09-15 半導体装置
JP2021127693A Active JP7213313B2 (ja) 2011-05-27 2021-08-03 半導体装置
JP2023004556A Active JP7427813B2 (ja) 2011-05-27 2023-01-16 半導体装置
JP2024008464A Active JP7661544B2 (ja) 2011-05-27 2024-01-24 半導体装置

Country Status (4)

Country Link
US (1) US8610482B2 (enExample)
JP (9) JP5959934B2 (enExample)
KR (9) KR101945689B1 (enExample)
TW (1) TWI534956B (enExample)

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TWI664731B (zh) * 2013-05-20 2019-07-01 半導體能源研究所股份有限公司 半導體裝置
US20160253145A1 (en) * 2013-10-31 2016-09-01 Lg Electronics Inc. Electronic device and method for controlling the same
KR102799986B1 (ko) 2014-11-28 2025-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 모듈, 및 전자 기기
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