JP5951442B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5951442B2
JP5951442B2 JP2012230365A JP2012230365A JP5951442B2 JP 5951442 B2 JP5951442 B2 JP 5951442B2 JP 2012230365 A JP2012230365 A JP 2012230365A JP 2012230365 A JP2012230365 A JP 2012230365A JP 5951442 B2 JP5951442 B2 JP 5951442B2
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Prior art keywords
oxide
layer
electrode layer
film
transistor
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Japanese (ja)
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JP2014082390A (ja
JP2014082390A5 (enExample
Inventor
山崎　舜平
舜平 山崎
英臣 須澤
英臣 須澤
慎也 笹川
慎也 笹川
哲弘 田中
哲弘 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012230365A priority Critical patent/JP5951442B2/ja
Priority to TW102136356A priority patent/TWI614897B/zh
Priority to CN201380054450.2A priority patent/CN104704638B/zh
Priority to PCT/JP2013/078115 priority patent/WO2014061713A1/en
Priority to KR1020157010061A priority patent/KR102224946B1/ko
Priority to US14/054,078 priority patent/US9287117B2/en
Publication of JP2014082390A publication Critical patent/JP2014082390A/ja
Publication of JP2014082390A5 publication Critical patent/JP2014082390A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2012230365A 2012-10-17 2012-10-17 半導体装置 Active JP5951442B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012230365A JP5951442B2 (ja) 2012-10-17 2012-10-17 半導体装置
TW102136356A TWI614897B (zh) 2012-10-17 2013-10-08 半導體裝置
PCT/JP2013/078115 WO2014061713A1 (en) 2012-10-17 2013-10-09 Semiconductor device
KR1020157010061A KR102224946B1 (ko) 2012-10-17 2013-10-09 반도체 장치
CN201380054450.2A CN104704638B (zh) 2012-10-17 2013-10-09 半导体器件
US14/054,078 US9287117B2 (en) 2012-10-17 2013-10-15 Semiconductor device comprising an oxide semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012230365A JP5951442B2 (ja) 2012-10-17 2012-10-17 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016114367A Division JP6189484B2 (ja) 2016-06-08 2016-06-08 半導体装置

Publications (3)

Publication Number Publication Date
JP2014082390A JP2014082390A (ja) 2014-05-08
JP2014082390A5 JP2014082390A5 (enExample) 2015-11-26
JP5951442B2 true JP5951442B2 (ja) 2016-07-13

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JP2012230365A Active JP5951442B2 (ja) 2012-10-17 2012-10-17 半導体装置

Country Status (6)

Country Link
US (1) US9287117B2 (enExample)
JP (1) JP5951442B2 (enExample)
KR (1) KR102224946B1 (enExample)
CN (1) CN104704638B (enExample)
TW (1) TWI614897B (enExample)
WO (1) WO2014061713A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2016167636A (ja) * 2016-06-08 2016-09-15 株式会社半導体エネルギー研究所 半導体装置

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JP6021586B2 (ja) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 半導体装置
JP2014082388A (ja) 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
JP6204145B2 (ja) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 半導体装置
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TWI614813B (zh) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
US9190527B2 (en) 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
JP6376788B2 (ja) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP6400336B2 (ja) 2013-06-05 2018-10-03 株式会社半導体エネルギー研究所 半導体装置
JP6435124B2 (ja) 2013-07-08 2018-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6322503B2 (ja) 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 半導体装置
KR102232133B1 (ko) 2013-08-22 2021-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6401977B2 (ja) 2013-09-06 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
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TWI666770B (zh) 2013-12-19 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置
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JP6616102B2 (ja) * 2014-05-23 2019-12-04 株式会社半導体エネルギー研究所 記憶装置及び電子機器
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
CN104167446B (zh) 2014-07-14 2017-09-29 京东方科技集团股份有限公司 一种薄膜晶体管、阵列基板和显示装置
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