JP5945392B2 - 発光デバイス - Google Patents

発光デバイス Download PDF

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Publication number
JP5945392B2
JP5945392B2 JP2011197317A JP2011197317A JP5945392B2 JP 5945392 B2 JP5945392 B2 JP 5945392B2 JP 2011197317 A JP2011197317 A JP 2011197317A JP 2011197317 A JP2011197317 A JP 2011197317A JP 5945392 B2 JP5945392 B2 JP 5945392B2
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JP
Japan
Prior art keywords
light emitting
semiconductor
emitting element
semiconductor substrate
wiring
Prior art date
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Application number
JP2011197317A
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English (en)
Japanese (ja)
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JP2012060133A (ja
JP2012060133A5 (https=
Inventor
ヨウン ソン、ホ
ヨウン ソン、ホ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
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Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2012060133A publication Critical patent/JP2012060133A/ja
Publication of JP2012060133A5 publication Critical patent/JP2012060133A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

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  • Led Device Packages (AREA)
JP2011197317A 2010-09-10 2011-09-09 発光デバイス Active JP5945392B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100089048A KR101711961B1 (ko) 2010-09-10 2010-09-10 발광 디바이스
KR10-2010-0089048 2010-09-10

Publications (3)

Publication Number Publication Date
JP2012060133A JP2012060133A (ja) 2012-03-22
JP2012060133A5 JP2012060133A5 (https=) 2014-10-30
JP5945392B2 true JP5945392B2 (ja) 2016-07-05

Family

ID=44582605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011197317A Active JP5945392B2 (ja) 2010-09-10 2011-09-09 発光デバイス

Country Status (5)

Country Link
US (1) US9006973B2 (https=)
EP (1) EP2428991B1 (https=)
JP (1) JP5945392B2 (https=)
KR (1) KR101711961B1 (https=)
CN (1) CN102403309B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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CN102751296B (zh) * 2012-07-24 2015-05-20 矽光光电科技（上海）有限公司 整合集成电路、发光元件及传感元件的单衬底器件
WO2014154023A1 (en) * 2013-03-25 2014-10-02 The Hong Kong University Of Science And Technology Power system-on-chip architecture
CN105393374B (zh) * 2013-07-19 2019-05-28 亮锐控股有限公司 具有光学元件并且没有衬底载体的pc led
TWM496091U (zh) * 2014-03-26 2015-02-21 賀喜能源股份有限公司 具矽基座的發光二極體及發光二極體燈具
DE102014105734A1 (de) * 2014-04-23 2015-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
JP6736260B2 (ja) * 2015-05-13 2020-08-05 ローム株式会社 半導体発光装置
US20170104135A1 (en) * 2015-10-13 2017-04-13 Sensor Electronic Technology, Inc. Light Emitting Diode Mounting Structure
WO2019202874A1 (ja) 2018-04-19 2019-10-24 ソニーセミコンダクタソリューションズ株式会社 半導体レーザ駆動装置およびその製造方法
US12148743B2 (en) * 2018-12-11 2024-11-19 Sony Semiconductor Solutions Corporation Semiconductor device and electronic equipment
CN113594194B (zh) 2020-04-30 2024-09-17 华为机器有限公司 一种堆叠结构、显示屏及显示装置
KR102557580B1 (ko) * 2021-01-05 2023-07-20 엘지전자 주식회사 반도체 발광 소자 패키지 및 디스플레이 장치
US20240290924A1 (en) * 2023-02-27 2024-08-29 Global Technologies Co., Ltd Light-emitting stacked package having driving circuit part, backlight unit, and method of fabricating light-emitting stacked package having and driving circuit part

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JPS63111682A (ja) * 1986-10-29 1988-05-16 Mitsubishi Electric Corp 光半導体素子用サブマウント
WO1998034285A1 (fr) 1997-01-31 1998-08-06 Matsushita Electronics Corporation Element electroluminescent, dispositif electroluminescent a semiconducteur, et leur procede de production
US6777883B2 (en) 2002-04-10 2004-08-17 Koninklijke Philips Electronics N.V. Integrated LED drive electronics on silicon-on-insulator integrated circuits
US20040206970A1 (en) 2003-04-16 2004-10-21 Martin Paul S. Alternating current light emitting device
JP2005142294A (ja) 2003-11-05 2005-06-02 Matsushita Electric Ind Co Ltd 半導体レーザユニットおよびそれを用いた光ピックアップ装置
JPWO2005104248A1 (ja) * 2004-04-19 2007-08-30 松下電器産業株式会社 発光素子駆動用半導体チップ、発光装置及び照明装置
WO2006005062A2 (en) 2004-06-30 2006-01-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
KR100927256B1 (ko) 2004-07-09 2009-11-16 엘지전자 주식회사 제너다이오드가 집적된 발광소자 서브마운트 제작방법
US7221044B2 (en) 2005-01-21 2007-05-22 Ac Led Lighting, L.L.C. Heterogeneous integrated high voltage DC/AC light emitter
JP4601464B2 (ja) * 2005-03-10 2010-12-22 株式会社沖データ 半導体装置、プリントヘッド、及びそれを用いた画像形成装置
EP2280430B1 (en) 2005-03-11 2020-01-01 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series
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US7994514B2 (en) 2006-04-21 2011-08-09 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with integrated electronic components
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CN101154656B (zh) 2006-09-30 2010-05-12 香港微晶先进封装技术有限公司 多芯片发光二极管模组结构及其制造方法
US7855425B2 (en) * 2007-03-09 2010-12-21 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same
JP2008235792A (ja) * 2007-03-23 2008-10-02 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
US8436371B2 (en) * 2007-05-24 2013-05-07 Cree, Inc. Microscale optoelectronic device packages
KR100878326B1 (ko) 2007-07-03 2009-01-14 한국광기술원 칩스케일 패키징 발광소자 및 그의 제조방법
JP2009117536A (ja) * 2007-11-05 2009-05-28 Towa Corp 樹脂封止発光体及びその製造方法
JP5102605B2 (ja) 2007-12-25 2012-12-19 パナソニック株式会社 発光装置およびその製造方法
JP5475954B2 (ja) * 2008-01-28 2014-04-16 パナソニック株式会社 発光装置
US8084780B2 (en) * 2009-08-13 2011-12-27 Semileds Optoelectronics Co. Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC)

Also Published As

Publication number Publication date
CN102403309B (zh) 2015-09-16
EP2428991A3 (en) 2014-06-11
US9006973B2 (en) 2015-04-14
JP2012060133A (ja) 2012-03-22
CN102403309A (zh) 2012-04-04
US20120062115A1 (en) 2012-03-15
EP2428991B1 (en) 2019-02-20
EP2428991A2 (en) 2012-03-14
KR101711961B1 (ko) 2017-03-03
KR20120026873A (ko) 2012-03-20

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