JP5925991B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5925991B2
JP5925991B2 JP2011021828A JP2011021828A JP5925991B2 JP 5925991 B2 JP5925991 B2 JP 5925991B2 JP 2011021828 A JP2011021828 A JP 2011021828A JP 2011021828 A JP2011021828 A JP 2011021828A JP 5925991 B2 JP5925991 B2 JP 5925991B2
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Japan
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region
semiconductor device
type
layer
diode
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JP2011021828A
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Japanese (ja)
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JP2012009811A5 (enExample
JP2012009811A (ja
Inventor
中村　勝光
勝光 中村
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2011021828A priority Critical patent/JP5925991B2/ja
Priority to TW100112417A priority patent/TWI437690B/zh
Priority to US13/093,397 priority patent/US8686469B2/en
Priority to KR1020110047223A priority patent/KR101298677B1/ko
Priority to DE102011076243.4A priority patent/DE102011076243B4/de
Priority to CN201110150632.2A priority patent/CN102280493B/zh
Priority to CN201310646732.3A priority patent/CN103633148B/zh
Publication of JP2012009811A publication Critical patent/JP2012009811A/ja
Priority to KR1020130066032A priority patent/KR101384246B1/ko
Publication of JP2012009811A5 publication Critical patent/JP2012009811A5/ja
Application granted granted Critical
Publication of JP5925991B2 publication Critical patent/JP5925991B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2011021828A 2010-05-26 2011-02-03 半導体装置 Active JP5925991B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2011021828A JP5925991B2 (ja) 2010-05-26 2011-02-03 半導体装置
TW100112417A TWI437690B (zh) 2010-05-26 2011-04-11 半導體裝置
US13/093,397 US8686469B2 (en) 2010-05-26 2011-04-25 Semiconductor device
KR1020110047223A KR101298677B1 (ko) 2010-05-26 2011-05-19 반도체장치
DE102011076243.4A DE102011076243B4 (de) 2010-05-26 2011-05-20 Halbleitervorrichtung
CN201110150632.2A CN102280493B (zh) 2010-05-26 2011-05-26 半导体装置
CN201310646732.3A CN103633148B (zh) 2010-05-26 2011-05-26 半导体装置
KR1020130066032A KR101384246B1 (ko) 2010-05-26 2013-06-10 반도체장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010120180 2010-05-26
JP2010120180 2010-05-26
JP2011021828A JP5925991B2 (ja) 2010-05-26 2011-02-03 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014160371A Division JP6301776B2 (ja) 2010-05-26 2014-08-06 半導体装置

Publications (3)

Publication Number Publication Date
JP2012009811A JP2012009811A (ja) 2012-01-12
JP2012009811A5 JP2012009811A5 (enExample) 2013-12-19
JP5925991B2 true JP5925991B2 (ja) 2016-05-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011021828A Active JP5925991B2 (ja) 2010-05-26 2011-02-03 半導体装置

Country Status (6)

Country Link
US (1) US8686469B2 (enExample)
JP (1) JP5925991B2 (enExample)
KR (2) KR101298677B1 (enExample)
CN (2) CN102280493B (enExample)
DE (1) DE102011076243B4 (enExample)
TW (1) TWI437690B (enExample)

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* Cited by examiner, † Cited by third party
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CN102687277B (zh) 2009-11-02 2016-01-20 富士电机株式会社 半导体器件以及用于制造半导体器件的方法
DE112012005981B4 (de) * 2012-03-05 2025-04-30 Mitsubishi Electric Corporation Halbleitervorrichtungen
DE112012006215B4 (de) 2012-04-13 2020-09-10 Mitsubishi Electric Corp. Diode
JPWO2014054121A1 (ja) 2012-10-02 2016-08-25 三菱電機株式会社 半導体装置
WO2014156849A1 (ja) * 2013-03-25 2014-10-02 富士電機株式会社 半導体装置
US9257511B2 (en) * 2013-03-26 2016-02-09 Infineon Technologies Ag Silicon carbide device and a method for forming a silicon carbide device
JP6108451B2 (ja) * 2013-04-05 2017-04-05 ラピスセミコンダクタ株式会社 半導体装置およびその製造方法
CN103208531B (zh) * 2013-04-07 2015-07-15 株洲南车时代电气股份有限公司 一种快恢复二极管frd芯片及其制作方法
CN107768427A (zh) * 2013-06-12 2018-03-06 三菱电机株式会社 半导体装置
KR101764075B1 (ko) * 2013-07-08 2017-08-01 미쓰비시덴키 가부시키가이샤 반도체 장치
TWI614898B (zh) * 2013-12-06 2018-02-11 Diodes Taiwan S.A.R.L. 終止區結構及其製造方法
WO2015114748A1 (ja) * 2014-01-29 2015-08-06 三菱電機株式会社 電力用半導体装置
DE112014006289B4 (de) 2014-01-29 2020-12-24 Mitsubishi Electric Corporation Leistungshalbleitervorrichtung
JP6190740B2 (ja) * 2014-03-11 2017-08-30 新電元工業株式会社 半導体装置及び半導体装置の製造方法
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
DE102014212455B4 (de) * 2014-06-27 2024-07-04 Robert Bosch Gmbh Diode mit einem plattenförmigen Halbleiterelement
JP2016029685A (ja) * 2014-07-25 2016-03-03 株式会社東芝 半導体装置
JP2016100455A (ja) * 2014-11-21 2016-05-30 三菱電機株式会社 半導体装置及びその製造方法
WO2016120999A1 (ja) * 2015-01-27 2016-08-04 三菱電機株式会社 半導体装置
WO2016129041A1 (ja) * 2015-02-09 2016-08-18 三菱電機株式会社 半導体装置
US9576791B2 (en) * 2015-06-01 2017-02-21 GM Global Technology Operations LLC Semiconductor devices including semiconductor structures and methods of fabricating the same
JP6611532B2 (ja) * 2015-09-17 2019-11-27 ローム株式会社 半導体装置および半導体装置の製造方法
JP6662393B2 (ja) 2015-12-28 2020-03-11 三菱電機株式会社 半導体装置、半導体装置の製造方法
JP6846119B2 (ja) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス ダイオード、およびそれを用いた電力変換装置
JP6820738B2 (ja) 2016-12-27 2021-01-27 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
JP6854654B2 (ja) * 2017-01-26 2021-04-07 ローム株式会社 半導体装置
JP6815285B2 (ja) * 2017-06-26 2021-01-20 株式会社東芝 半導体装置
US10361276B1 (en) * 2018-03-17 2019-07-23 Littelfuse, Inc. Embedded field plate field effect transistor
JP6558462B2 (ja) * 2018-03-22 2019-08-14 三菱電機株式会社 半導体装置
JP7052476B2 (ja) * 2018-03-27 2022-04-12 三菱電機株式会社 半導体装置
JP7030637B2 (ja) * 2018-07-23 2022-03-07 三菱電機株式会社 半導体装置の製造方法
JP6964566B2 (ja) 2018-08-17 2021-11-10 三菱電機株式会社 半導体装置およびその製造方法
JP7233256B2 (ja) * 2019-03-12 2023-03-06 三菱電機株式会社 半導体装置及び半導体装置の製造方法
US12477773B2 (en) 2020-09-17 2025-11-18 Rohm Co., Ltd. Semiconductor device including terminal electrodes
JP7580245B2 (ja) 2020-11-02 2024-11-11 三菱電機株式会社 半導体装置および半導体装置の製造方法
US20220140132A1 (en) * 2020-11-04 2022-05-05 Cree, Inc. Passivation structures for semiconductor devices
CN114582864A (zh) * 2020-11-30 2022-06-03 华为技术有限公司 一种功率半导体器件及电子设备
JP7487094B2 (ja) * 2020-12-23 2024-05-20 株式会社 日立パワーデバイス 半導体装置
DE102021000610A1 (de) * 2021-02-08 2022-08-11 3-5 Power Electronics GmbH Stapelförmige III-V-Halbleiterdiode
CN113451137A (zh) * 2021-06-29 2021-09-28 深圳铨力半导体有限公司 晶体管制造方法、设备、计算机可读存储介质与程序产品
JP7504066B2 (ja) * 2021-08-17 2024-06-21 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
JP7558134B2 (ja) * 2021-10-13 2024-09-30 三菱電機株式会社 半導体装置および半導体装置の製造方法
US12363961B2 (en) * 2021-11-15 2025-07-15 Infineon Technologies Ag Semiconductor device
JP7692341B2 (ja) * 2021-12-16 2025-06-13 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP7692875B2 (ja) * 2022-05-16 2025-06-16 三菱電機株式会社 パワー半導体装置およびパワー半導体装置の製造方法
DE102022124385A1 (de) 2022-09-22 2024-03-28 Infineon Technologies Ag Feldeffekttransistor mit randabschlussbereich

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Also Published As

Publication number Publication date
KR101384246B1 (ko) 2014-04-11
US8686469B2 (en) 2014-04-01
DE102011076243A1 (de) 2011-12-01
TW201208039A (en) 2012-02-16
DE102011076243B4 (de) 2015-08-27
KR20130083867A (ko) 2013-07-23
CN102280493B (zh) 2014-02-05
TWI437690B (zh) 2014-05-11
CN103633148A (zh) 2014-03-12
KR20110129817A (ko) 2011-12-02
JP2012009811A (ja) 2012-01-12
CN102280493A (zh) 2011-12-14
CN103633148B (zh) 2017-12-08
KR101298677B1 (ko) 2013-08-21
US20110291223A1 (en) 2011-12-01

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