JP5918221B2 - Ledチップの製造方法 - Google Patents
Ledチップの製造方法 Download PDFInfo
- Publication number
- JP5918221B2 JP5918221B2 JP2013509039A JP2013509039A JP5918221B2 JP 5918221 B2 JP5918221 B2 JP 5918221B2 JP 2013509039 A JP2013509039 A JP 2013509039A JP 2013509039 A JP2013509039 A JP 2013509039A JP 5918221 B2 JP5918221 B2 JP 5918221B2
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- JP
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- Prior art keywords
- led
- wafer
- cte
- led chip
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/771,938 | 2010-04-30 | ||
| US12/771,938 US8329482B2 (en) | 2010-04-30 | 2010-04-30 | White-emitting LED chips and method for making same |
| PCT/US2011/000381 WO2011136837A1 (en) | 2010-04-30 | 2011-02-28 | White-emitting led chips and method for making same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013526078A JP2013526078A (ja) | 2013-06-20 |
| JP2013526078A5 JP2013526078A5 (https=) | 2014-07-31 |
| JP5918221B2 true JP5918221B2 (ja) | 2016-05-18 |
Family
ID=44021865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013509039A Active JP5918221B2 (ja) | 2010-04-30 | 2011-02-28 | Ledチップの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8329482B2 (https=) |
| JP (1) | JP5918221B2 (https=) |
| CN (1) | CN102870242B (https=) |
| WO (1) | WO2011136837A1 (https=) |
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| JP4875185B2 (ja) | 2010-06-07 | 2012-02-15 | 株式会社東芝 | 光半導体装置 |
| US8471282B2 (en) | 2010-06-07 | 2013-06-25 | Koninklijke Philips Electronics N.V. | Passivation for a semiconductor light emitting device |
| KR101150861B1 (ko) * | 2010-08-16 | 2012-06-13 | 한국광기술원 | 멀티셀 구조를 갖는 발광다이오드 및 그 제조방법 |
| US8492788B2 (en) * | 2010-10-08 | 2013-07-23 | Guardian Industries Corp. | Insulating glass (IG) or vacuum insulating glass (VIG) unit including light source, and/or methods of making the same |
| KR101748334B1 (ko) | 2011-01-17 | 2017-06-16 | 삼성전자 주식회사 | 백색 발광 소자의 제조 방법 및 제조 장치 |
| TWI424047B (zh) * | 2011-01-24 | 2014-01-21 | Univ Nat Chiao Tung | 紅光和綠光之氟硫化物螢光材料、製備方法與其白光發光二極體裝置 |
| US8941137B2 (en) * | 2011-03-06 | 2015-01-27 | Mordehai MARGALIT | Light emitting diode package and method of manufacture |
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| CN107086198B (zh) * | 2011-08-30 | 2020-09-11 | 亮锐控股有限公司 | 将衬底接合到半导体发光器件的方法 |
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| CN109712967B (zh) * | 2017-10-25 | 2020-09-29 | 隆达电子股份有限公司 | 一种发光二极管装置及其制造方法 |
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-
2010
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-
2011
- 2011-02-28 WO PCT/US2011/000381 patent/WO2011136837A1/en not_active Ceased
- 2011-02-28 JP JP2013509039A patent/JP5918221B2/ja active Active
- 2011-02-28 CN CN201180021906.6A patent/CN102870242B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102870242B (zh) | 2016-06-08 |
| US8329482B2 (en) | 2012-12-11 |
| CN102870242A (zh) | 2013-01-09 |
| US20110266560A1 (en) | 2011-11-03 |
| JP2013526078A (ja) | 2013-06-20 |
| WO2011136837A1 (en) | 2011-11-03 |
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