TWM454630U - 混光發光二極體結構 - Google Patents
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 28
- 239000007787 solid Substances 0.000 claims description 28
- 239000000084 colloidal system Substances 0.000 claims description 22
- 239000000843 powder Substances 0.000 claims description 11
- 239000004954 Polyphthalamide Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 10
- 229920006375 polyphtalamide Polymers 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 102100032047 Alsin Human genes 0.000 claims description 4
- 101710187109 Alsin Proteins 0.000 claims description 4
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 4
- 229910052771 Terbium Inorganic materials 0.000 claims description 4
- 229920002379 silicone rubber Polymers 0.000 claims description 2
- 239000004945 silicone rubber Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 24
- 238000000034 method Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 241000254158 Lampyridae Species 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920001184 polypeptide Polymers 0.000 description 1
- 102000004196 processed proteins & peptides Human genes 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000018553 tannin Nutrition 0.000 description 1
- 229920001864 tannin Polymers 0.000 description 1
- 239000001648 tannin Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Description
本創作係為一種發光二極體結構,特別是指一種可簡化製程、方便組裝,並有效降低成本的混光發光二極體結構。
早年多半用於電子產品指示用途的發光二極體因具有耗電量低、壽命長及不發熱等優點,目前則進一步被用來作為大型顯示屏幕及照明之用。然而作為照明用途時,發光二極體能否產生白色光,即成為一重要的技術關鍵。
由於一般發光二極體多為有色光,如紅色、綠色、藍色等,若欲透過三原色混合成白色光,則必須同時使用紅、綠、藍色發光晶片,透過不同電流的激發,以混合出白色光線。習知之白光二極體主要技術是將紅、藍、綠三色發光晶片封裝在一包裝體內,並同時封入一控制晶片,且透過晶線以作為連接三發光晶片與控制晶片的引線。而三發光晶片為分離設置,其可發出白光的區域僅為三顆晶片發光的交會處,但各晶片之周緣以及二晶片之交會處,所發出之光則為各晶片本身之光與二晶片之混光,均非為白光,且需另設一控制晶片,不僅令成本提高,同時製程亦較複雜者。
一般來說,習知表面黏著型發光二極體(SMD LED)的封裝主要有兩種方法,其一是使用金屬材質的導線架(leadframe)作為封裝基板,並將發光二極體晶片固定於導線架上;另一種方式則係使用印刷電路板(printed circuit board,PCB)作為封裝基板,並將發光二極體晶片固晶於印刷電路板上。且,封裝時含有螢光粉,係將螢光粉分佈於該發光二極體晶片之周圍。於此,該發光二極體晶片若發出的光源為藍光,則可直接激發該螢光粉以產生黃光,從而與剩餘的藍光混光而形成白光。該螢光粉直接分
佈於該發光二極體晶片之周圍有利於混光並於一定程度上提高發光二極體之出光均勻度,然而當該發光二極體工作時,其溫度通常會達到70~80度,這樣之高溫很容易使該螢光粉之效率降低,造成發光二極體之出光效率及均勻度降低。
因此,以需求來說,設計一個混光發光二極體結構,可藉由固態螢光片受色光激發以產生無光色差異、混光均勻之光源的混光發光二極體結構,已成市場應用上之一個刻不容緩的議題。
有鑑於上述習知技藝之問題,本創作之目的就是在提供一種可產生無光色差異、混光均勻之光源的混光發光二極體結構,以解決習知技術之問題。
根據本創作之目的,提出一種混光發光二極體結構,係設有由一螢光粉與一膠體混製成的一固態螢光片,該固態螢光片係設於一承載架中,該承載架具有一凹杯並於該凹杯上緣形成一發光孔;該凹杯底設有一發光晶片,而該固態螢光片係覆蓋於該發光晶片上方,其特徵在於:該固態螢光片之面積為X,該發光孔之面積為Y,該固態螢光片之面積與該發光孔之面積係符合85%*Y≦X之關係式;該固態螢光片係與該發光晶片具有一距離L,且該距離L係符合0≦L≦50mm關係式。
在一實施例中,該發光晶片以連接打線方式電性連接設於該承載架上之二電極,該固態螢光片卡抵於該凹杯壁緣且位置係高於連接打線的高度。
在另一實施例中,該發光晶片係以覆晶方式結合於該承載架上之二電極。
根據本創作之目的,再提出一種混光發光二極體結構,係具有一印刷電路板及由一螢光粉與一膠體混製而成之一固態螢光片,該印刷電路板係設有至少二電極與一發光晶片,且該二電極電性連接該發光晶片,並透過一透光膠體固定該固態螢光片覆蓋於該發光晶片上方,其特徵在於:該固態螢光片之面積為X,該發光晶片之面積為Z,該固態螢光片之面積與該發光晶片之面積係符合Z≦X之關係式,且該發光晶片係以覆晶方
式結合於該印刷電路板上之該二電極。
根據本創作之目的,更再提出一種混光發光二極體結構,係具有一陶瓷板及由一螢光粉與一膠體混製而成之一固態螢光片,該陶瓷板係設有至少二電極與一發光晶片,且該二電極電性連接該發光晶片,並透過一透光膠體固定該固態螢光片覆蓋於該發光晶片上方,其特徵在於:該固態螢光片之面積為X,該發光晶片之面積為Z,該固態螢光片之面積與該發光晶片之面積係符合Z≦X之關係式,且該發光晶片係以覆晶方式結合於該陶瓷板之該二電極。
其中,上述之該固態螢光片之該膠體係為環氧樹脂、聚肽醯胺(polyphthalamide簡稱PPA)或矽膠任一種者,而該固態螢光片的該螢光粉之通式係為(Ba,Sr,Ca)2
SiO4
:Eu2+
、Y3
Al5
O12
:Ce3+
、(SrCa)AlSiN3
:Eu、(Ba,Sr,Ca)Ga2
S4
:Eu或Tb3
Al5
O12
:Ce3+
其中之一者。
為讓本創作之上述和其他目的、特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。
1、2、3‧‧‧混光發光二極體結構
11、21、31‧‧‧固態螢光片
12、22‧‧‧承載架
13、23、33‧‧‧發光晶片
14‧‧‧連接打線
15、32‧‧‧電極
16、26、35‧‧‧透明膠體
24、34‧‧‧錫球
25‧‧‧接腳
36‧‧‧印刷電路板
第1圖,係為本創作之混光發光二極體結構之第一實施例之第一示意圖。
第2圖,係為本創作之混光發光二極體結構之第一實施例之第二示意圖。
第3圖,係為本創作之混光發光二極體結構之第二實施例之第一示意圖。
第4圖,係為本創作之混光發光二極體結構之第二實施例之第二示意圖。
第5圖,係為本創作之混光發光二極體結構之第三實施例之第一示意圖。
第6圖,係為本創作之混光發光二極體結構之第三實施例之第二示意圖。
以下將參照相關圖式,說明依本創作之混光發光二極體結構之實施例,為使便於理解,下述實施例中之相同元件係以相同之符號標示來說明。
請參閱第1圖及第2圖,其係為本創作之混光發光二極體結構之第一實施例之剖面圖及上視圖。如圖所示,本創作之混光發光二極體結構1具有一承載架12,而該承載架12具有一凹杯,並於該凹杯上緣形成
一發光孔,該凹杯底設有一發光晶片13,而該發光晶片13上方覆蓋一固態螢光片11。
該固態螢光片11係由一螢光粉與一膠體混製而成,且可以射出成型(injection molding)或注模成型方式製成,其中,該膠體較佳係為環氧樹脂(Epoxy)、聚肽醯胺(polyphthalamide,PPA)或矽膠之其中之一,而該螢光粉之通式較佳係為(Ba,Sr,Ca)2
SiO4
:Eu2+
、Y3
Al5
O12
:Ce3+
、(SrCa)AlSiN3
:Eu、(Ba,Sr,Ca)Ga2
S4
:Eu或Tb3
Al5
O12
:Ce3+
其中之一者,而上述僅作為示例,並不以此為限。
該發光晶片13若以連接打線14方式電性連接設於該承載架12上之二電極15,該固態螢光片11卡抵於該凹杯壁緣,且位置係高於連接打線14的高度。
值得注意的是,該固態螢光片11之面積為X,該發光孔之面積為Y,在本實施例中,該固態螢光片11與該發光孔之面積係符合85%*Y≦X之關係式,由圖可知該固態螢光片11係可設置於該發光孔內。然而,該固態螢光片11之面積與該發光孔之面積係可符合85%*Y≦X之關係式,故可將該固態螢光片11設置於該發光孔處上或下之不同位置,亦即該固態螢光片11可卡合於該凹杯內或直接置於該凹杯上,在本實施例中僅為示例,並非侷限於本實施例所繪製之圖示中。
另外,為使發光晶片13及二連接打線14可與外界分隔,係可於該固態螢光片11上塗佈或灌注一透光膠體16,該透光膠體16可為環氧樹脂、聚肽醯胺(polyphthalamide簡稱PPA)或矽膠之其中之一,使該透光膠體16將該固態螢光片11固設定位於該凹杯中,並藉該固態螢光片11之阻隔使該透光膠體16不致覆蓋住發光晶片13,有效節省該透明膠體16之使用量,即可製出本創作之混光發光二極體結構1,其中該透光膠體16之材質並不以此為限。同時,該固態螢光片11係與該發光晶片13具有一距離L,且該距離L係符合0≦L≦50mm關係式。
因此,當本創作之混光發光二極體結構1接通電源後,該發光晶片13所發出之色光可經內含均勻螢光粉且厚度一致之固態螢光片11,可使該固態螢光片11受色光激發以產生無光色差異、混光均勻之光源。
請參閱第3圖及第4圖,其係為本創作之混光發光二極體結構之第二實施例之剖面圖及上視圖。如圖所示,本創作之混光發光二極體結構2具有一承載架22,該承載架22具有一凹杯並於該凹杯上緣形成一發光孔,而該凹杯底設有一發光晶片23,與第一實施例不同之處在於該發光晶片23係以覆晶方式結合於該承載架22上之二電極25,藉錫球24或金球與不同極性之接腳25結合。在本實施例中係以錫球24為例,該發光晶片23係藉錫球24結合的方式覆晶於二接腳25上,該發光晶片23的上方疊設有一固態螢光片21,因發光晶片23以覆晶的方式結合,故不需再藉打線方式連結,因此固態螢光片21可直接疊置於發光晶片23或設置於發光晶片23上方。
並且,值得一提的是,該固態螢光片21之面積為X,該發光孔之面積為Y,在本實施例中,該固態螢光片21之面積X係等於該發光孔之面積Y之85%,也就是符合85%*Y≦X之關係式,故該固態螢光片21係可設置於該發光孔內,並平貼於該發光晶片23上方。然而,該固態螢光片21與該發光孔之面積係符合85%*Y≦X之關係式,故在本實施例中僅為示例,該固態螢光片21可設置於該發光孔上或下之不同位置,亦即該固態螢光片11可卡合於該凹杯內或直接置於該凹杯上,,並非侷限於本實施例所繪製之圖示中。同時,該固態螢光片21係與該發光晶片23具有一距離L,且該距離L係符合0≦L≦50mm關係式,而在本實施例中該距離L係為0。
請參閱第5圖及第6圖,其係為本創作之混光發光二極體結構之第三實施例之剖面圖及上視圖。如圖所示,本創作之混光發光二極體結構3係具有一印刷電路板36(或一陶瓷板)及由一螢光粉與一膠體混製而成之一固態螢光片31,該印刷電路板36(或該陶瓷板)係設有至少二電極32與一發光晶片33,且於該印刷電路板36(或該陶瓷板)的二電極32上藉錫球34以覆晶方式將發光晶片33結合於其上,再將該固態螢光片31覆蓋於該發光晶片33上,並透過一透光膠體35固定該固態螢光片31覆蓋於該發光晶片33上方,以製成一混光發光二極體結構3。
其中,該固態螢光片31的該膠體係為環氧樹脂、聚肽醯胺(polyphthalamide簡稱PPA)或矽膠任一種者。而該固態螢光片31的該螢光粉
之通式係為(Ba,Sr,Ca)2
SiO4
:Eu2+
、Y3
Al5
O12
:Ce3+
、(SrCa)AlSiN3
:Eu、(Ba,Sr,Ca)Ga2
S4
:Eu或Tb3
Al5
O12
:Ce3+
其中之一者。
綜上所述,本創作之混光發光二極體結構可具有下列多個優點:
1.本創作之混光發光二極體結構可藉由固態螢光片之製成有效簡化混光發光二極體結構的製程,使其組裝更形方便,有效降低成本者。
2.本創作之混光發光二極體結構之固態螢光片為一厚度均勻、溶入物均勻之片體,設於晶片上方時可令混光發光二極體結構所發出之混光可達光色均勻者。
3.本創作之混光發光二極體結構可利用固態螢光片之裝設將承載架之凹杯分隔為二,令透光層在封合時僅封合薄片上方之空間,該薄片下方的空間並不注入,如此係可節省透光層的使用量。
惟,以上所述者,僅為本創作之較佳實施例而已,並非用以限定本創作實施之範圍,此等熟習此技術所作出等效或輕易的變化者,在不脫離本創作之精神與範圍下所作之均等變化與修飾,皆應涵蓋於本創作之專利範圍內。
1‧‧‧混光發光二極體結構
11‧‧‧固態螢光片
12‧‧‧承載架
13‧‧‧發光晶片
14‧‧‧連接打線
15‧‧‧電極
16‧‧‧透明膠體
Claims (7)
- 一種混光發光二極體結構,係設有由一螢光粉與一膠體混製成的一固態螢光片,該固態螢光片係設於一承載架中,該承載架具有一凹杯並於該凹杯上緣形成一發光孔;該凹杯底設有一發光晶片,而該固態螢光片係覆蓋於該發光晶片上方,其特徵在於:該固態螢光片之面積為X,該發光孔之面積為Y,該固態螢光片之面積與該發光孔之面積係符合85%*Y≦X之關係式;該固態螢光片係與該發光晶片具有一距離L,且該距離L係符合0≦L≦50mm關係式。
- 如申請專利範圍第1項所述之混光發光二極體結構,其中該發光晶片以連接打線方式電性連接設於該承載架上之二電極,該固態螢光片卡抵於該凹杯壁緣且位置係高於連接打線的高度。
- 如申請專利範圍第1項所述之混光發光二極體結構,其中該發光晶片係以覆晶方式結合於該承載架上之二電極。
- 一種混光發光二極體結構,係具有一印刷電路板及由一螢光粉與一膠體混製而成之一固態螢光片,該印刷電路板係設有至少二電極與一發光晶片,且該二電極電性連接該發光晶片,並透過一透光膠體固定該固態螢光片覆蓋於該發光晶片上方,其特徵在於:該固態螢光片之面積為X,該發光晶片之面積為Z,該固態螢光片之面積與該發光晶片之面積係符合Z≦X之關係式,且該發光晶片係以覆晶方式結合於該印刷電路板上之該二電極。
- 一種混光發光二極體結構,係具有一陶瓷板及由一螢光粉與一膠體混製而成之一固態螢光片,該陶瓷板係設有至少二電極與一發光晶片,且該二電極電性連接該發光晶片,並透過一透光膠體固定該固態螢光片覆蓋於該發光晶片上方,其特徵在於:該固態螢光片之面積為X,該發光晶片之面積為Z,該固態螢光片之面積與該發光晶片之面積係符合Z≦X之關係式,且該發光晶片係以覆晶方式結合於該陶瓷板之該二電極。
- 如申請專利範圍第1至5項其中任一項所述之混光發光二極體結構,其中該固態螢光片的該膠體係為環氧樹脂、聚肽醯胺(polyphthalamide簡稱PPA)或矽膠任一種者。
- 如申請專利範圍第1至5項其中任一項所述之混光發光二極體結構,其 中該固態螢光片的該螢光粉之通式係為(Ba,Sr,Ca)2 SiO4 :Eu2+ 、Y3 Al5 O12 :Ce3+ 、(SrCa)AlSiN3 :Eu、(Ba,Sr,Ca)Ga2 S4 :Eu或Tb3 Al5 O12 :Ce3+ 其中之一者。
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TW102201358U TWM454630U (zh) | 2013-01-22 | 2013-01-22 | 混光發光二極體結構 |
CN2013200636287U CN203218325U (zh) | 2013-01-22 | 2013-02-04 | 混光发光二极管结构 |
US13/795,152 US20140203312A1 (en) | 2013-01-22 | 2013-03-12 | Mixed light led structure |
DE202013101226U DE202013101226U1 (de) | 2013-01-22 | 2013-03-21 | Mischlicht - Leuchtdiode |
JP2013001616U JP3183896U (ja) | 2013-01-22 | 2013-03-25 | 光混合式発光ダイオードの構造 |
KR2020130003431U KR20140004505U (ko) | 2013-01-22 | 2013-05-02 | 광혼합식 발광 다이오드의 구조 |
US14/247,360 US20140217451A1 (en) | 2013-01-22 | 2014-04-08 | Mixed light led structure |
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TWI501363B (zh) * | 2014-01-10 | 2015-09-21 | Sfi Electronics Technology Inc | 一種小型化表面黏著型二極體封裝元件及其製法 |
TWI649900B (zh) * | 2015-02-04 | 2019-02-01 | 億光電子工業股份有限公司 | Led封裝結構及其製造方法 |
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JP6275943B2 (ja) | 2012-10-16 | 2018-02-07 | 京セラ株式会社 | 携帯電子機器 |
CN103943757A (zh) * | 2014-04-22 | 2014-07-23 | 佛山佛塑科技集团股份有限公司 | 基于注塑工艺的led照明用远程荧光粉配光薄膜及其制备方法 |
DE102015111379A1 (de) | 2015-07-14 | 2017-01-19 | Sick Ag | Optoelektronischer Sensor |
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US8723409B2 (en) * | 2010-04-07 | 2014-05-13 | Nichia Corporation | Light emitting device |
US8329482B2 (en) * | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
JP5730680B2 (ja) * | 2011-06-17 | 2015-06-10 | シチズン電子株式会社 | Led発光装置とその製造方法 |
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2013
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- 2013-02-04 CN CN2013200636287U patent/CN203218325U/zh not_active Expired - Fee Related
- 2013-03-12 US US13/795,152 patent/US20140203312A1/en not_active Abandoned
- 2013-03-21 DE DE202013101226U patent/DE202013101226U1/de not_active Expired - Lifetime
- 2013-03-25 JP JP2013001616U patent/JP3183896U/ja not_active Expired - Lifetime
- 2013-05-02 KR KR2020130003431U patent/KR20140004505U/ko not_active Application Discontinuation
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Cited By (2)
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TWI501363B (zh) * | 2014-01-10 | 2015-09-21 | Sfi Electronics Technology Inc | 一種小型化表面黏著型二極體封裝元件及其製法 |
TWI649900B (zh) * | 2015-02-04 | 2019-02-01 | 億光電子工業股份有限公司 | Led封裝結構及其製造方法 |
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US20140217451A1 (en) | 2014-08-07 |
CN203218325U (zh) | 2013-09-25 |
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