JP5870493B2 - 半導体装置、センサーおよび電子デバイス - Google Patents

半導体装置、センサーおよび電子デバイス Download PDF

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Publication number
JP5870493B2
JP5870493B2 JP2011037969A JP2011037969A JP5870493B2 JP 5870493 B2 JP5870493 B2 JP 5870493B2 JP 2011037969 A JP2011037969 A JP 2011037969A JP 2011037969 A JP2011037969 A JP 2011037969A JP 5870493 B2 JP5870493 B2 JP 5870493B2
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electrode
substrate
semiconductor substrate
conductive layer
recess
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JP2012175024A5 (enExample
JP2012175024A (ja
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今井　英生
英生 今井
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2011037969A priority Critical patent/JP5870493B2/ja
Priority to CN201210034217.5A priority patent/CN102651357B/zh
Priority to US13/403,338 priority patent/US9000575B2/en
Publication of JP2012175024A publication Critical patent/JP2012175024A/ja
Publication of JP2012175024A5 publication Critical patent/JP2012175024A5/ja
Priority to US14/504,957 priority patent/US9209112B2/en
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    • H10W20/20—
    • H10W20/023—
    • H10W20/0234—
    • H10W20/0242—
    • H10W20/0261—
    • H10W42/121—
    • H10W90/00—
    • H10W72/01235—
    • H10W72/01935—
    • H10W72/072—
    • H10W72/07227—
    • H10W72/221—
    • H10W72/234—
    • H10W72/241—
    • H10W72/242—
    • H10W72/252—
    • H10W72/29—
    • H10W72/9226—
    • H10W72/923—
    • H10W72/932—
    • H10W72/9415—
    • H10W72/942—
    • H10W72/944—
    • H10W72/952—
    • H10W80/314—
    • H10W90/297—
    • H10W90/722—
    • H10W90/724—

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Manufacturing & Machinery (AREA)
JP2011037969A 2011-02-24 2011-02-24 半導体装置、センサーおよび電子デバイス Active JP5870493B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011037969A JP5870493B2 (ja) 2011-02-24 2011-02-24 半導体装置、センサーおよび電子デバイス
CN201210034217.5A CN102651357B (zh) 2011-02-24 2012-02-15 半导体装置、传感器以及电子设备
US13/403,338 US9000575B2 (en) 2011-02-24 2012-02-23 Semiconductor device having stacked substrates with protruding and recessed electrode connection
US14/504,957 US9209112B2 (en) 2011-02-24 2014-10-02 Semiconductor device having stacked substrates with protruding and recessed electrode connection

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Application Number Priority Date Filing Date Title
JP2011037969A JP5870493B2 (ja) 2011-02-24 2011-02-24 半導体装置、センサーおよび電子デバイス

Related Child Applications (1)

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JP2015124502A Division JP6290830B6 (ja) 2015-06-22 2015-06-22 半導体装置、センサーおよび電子デバイス

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JP2012175024A5 JP2012175024A5 (enExample) 2014-03-27
JP5870493B2 true JP5870493B2 (ja) 2016-03-01

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CN (1) CN102651357B (enExample)

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CN109671821B (zh) * 2017-10-13 2022-01-25 英属开曼群岛商錼创科技股份有限公司 微型发光元件及显示装置
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CN109979833A (zh) * 2019-03-10 2019-07-05 复旦大学 一种基于嵌套结构和退火的快速常温微凸点键合方法
TWI726685B (zh) 2020-04-16 2021-05-01 錼創顯示科技股份有限公司 微型發光元件顯示裝置
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Also Published As

Publication number Publication date
US20150054138A1 (en) 2015-02-26
US9209112B2 (en) 2015-12-08
US9000575B2 (en) 2015-04-07
JP2012175024A (ja) 2012-09-10
CN102651357B (zh) 2016-09-28
US20120217650A1 (en) 2012-08-30
CN102651357A (zh) 2012-08-29

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