JP2012175024A - 半導体装置、センサーおよび電子デバイス - Google Patents
半導体装置、センサーおよび電子デバイス Download PDFInfo
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- JP2012175024A JP2012175024A JP2011037969A JP2011037969A JP2012175024A JP 2012175024 A JP2012175024 A JP 2012175024A JP 2011037969 A JP2011037969 A JP 2011037969A JP 2011037969 A JP2011037969 A JP 2011037969A JP 2012175024 A JP2012175024 A JP 2012175024A
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Abstract
【解決手段】突起電極117が形成された第2基板100上に、貫通電極40が形成された第1基板10が積層され、貫通電極40には凹部28を有し、凹部28に突起電極117が入り込んで積層され、凹部28の開口幅に対して、突起電極117の先端幅が小さくなっている。
【選択図】図5
Description
従来、例えば、特許文献1に記載されているように、一方の半導体基板に貫通電極を設け、他方の半導体基板に突起電極を設け、突起電極を貫通孔の中に圧接して塑性変形させ、かしめ状態で上下の半導体基板を電気的に接続する方法が知られている。
図1(A)〜(D)および図2(A)〜(C)は本実施形態の第1基板の製造工程を説明する断面図である。図3は本実施形態の第2基板の製造工程を説明する断面図である。
本実施の形態では、第1基板として半導体基板10を使用する。図1(A)に示す半導体基板10は、半導体ウエハであるが半導体チップであってもよい。半導体基板10には、少なくとも1つの(半導体ウエハには複数の、半導体チップには1つの)集積回路(例えばトランジスターやメモリーを有する回路(図示せず))が主面である第1の面12に形成されている。半導体基板10には、複数の第1電極としての電極(例えばパッド)14が形成されている。各電極14は、集積回路に電気的に接続されている。各電極14は、アルミニウム(Al)などで形成されていてもよい。電極14の表面形状は特に限定されないが矩形であることが多い。半導体基板10が半導体ウエハである場合、複数の半導体チップとなる各領域に、2つ以上(1グループ)の電極14が形成される。
図4に示すように、第1基板である半導体基板10の貫通電極40の凹部28の開口幅aと、第2基板である半導体基板100の突起電極117の先端幅bが、a>bとなっている。また半導体基板10の貫通電極40の凹部28の深さcと、半導体基板100の突起電極117の高さdがc<dとなっている。なお、凹部28の深さcは、ろう材層30を含まない深さである。
ろう材層30は半導体基板10の導電層25、26よりも融点が低いので、より低温での接合が可能となり、容易に金属間接合ができるため、応力を低くできることで半導体基板間の接続信頼性を向上することができる。
第1基板である半導体基板10を第2基板である半導体基板100に積層する。そのとき、半導体基板10の貫通電極40の凹部28に、半導体基板100の突起電極117が入り込むが、半導体基板10の貫通電極40の凹部28の開口幅aに対して、半導体基板100の突起電極117の先端幅bが狭いため、容易に入り込ませることができ、半導体基板10,100の破損を防止することができる。凹部28は、底から開口に向けて拡がるように形成されているので、半導体基板100の突起電極117を、半導体基板10の凹部28に容易に入り込ませることができる。また半導体基板10の貫通電極40の凹部28の深さcに対して、半導体基板100の突起電極117の高さdが高いため、半導体基板10と半導体基板100の隙間が適正に保つことができ、接続信頼性を向上することができる。
図6は、実施形態2に係る半導体基板の積層状態を示す図である。
本実施形態に係る半導体装置について、この図を参照して説明する。なお、実施形態1と同一の構成部位については、同一の番号を使用し、重複する説明は省略する。
本実施の形態では、第1基板である半導体基板10と第2基板である半導体基板100との間に、第3基板である半導体基板200が積層されている。
ろう材層30は半導体基板10の導電層25、26より、ろう材層230は半導体基板200の導電層225、226よりも融点が低くいので、より低温での接合が可能となり、容易に金属間接合ができるため、応力を低くできることで接続信頼性を向上することができる。
第3基板である半導体基板200を第2基板である半導体基板100に積層し、第1基板である半導体基板10を半導体基板200に積層する。そのとき、半導体基板10の貫通電極40の凹部28の開口幅に対して、半導体基板200の突起電極217の先端幅が狭く、半導体基板200の貫通電極240の凹部228の開口幅に対して、半導体基板100の突起電極117の先端幅が狭いため、容易に入り込ませることができ、実施形態1より積層数が多くても半導体基板10,100,200の破損を防止することができる。凹部28同様、凹部228は、底から開口に向けて拡がるように形成されているので、半導体基板100の突起電極117が、半導体基板200の凹部228に、半導体基板200の突起電極217が、半導体基板10の凹部28に容易に入り込ませることができる。また半導体基板10の貫通電極40の凹部28の深さに対して、半導体基板200の突起電極217の高さが高く、半導体基板200の貫通電極240の凹部228の深さに対して、半導体基板100の突起電極117の高さが高いため、半導体基板10と半導体基板200の隙間と、半導体基板200と半導体基板100の隙間が適正に保つことができ、半導体基板間の接続信頼性を向上することができる。
図7、8、9は、変形例1に係る図である。以下、変形例1に係る説明をする。なお、実施形態1、2と同一の構成部位については、同一の番号を附し、重複する説明は省略する。
図7、8は実施形態1の変形例である。
半導体基板100の突起電極118の先端幅bと電極114側の幅eとの関係が、b<eとなっている。本実施形態では突起電極118は円錐台形状に形成されている。突起電極118の先端幅bに対して、電極114側の幅eの方が大きいことで、先端幅が細くても半導体基板100に対する突起電極の強度が向上し、半導体基板間の接続信頼性を向上することができる。
貫通電極の凹部の開口幅に対して、突起電極の先端幅が先細りで十分狭いため、容易に入り込ませることができ、基板の破損を防止することができる。また凹部は、底から開口に向けて拡がるように形成されているので、突起電極が、半導体基板の凹部に容易に入り込ませることができる。
Claims (8)
- 互いに反対側に位置する主面および裏面を有する第1基板と、
前記第1基板に積層される、互いに反対側に位置する主面および裏面を有する第2基板と、を備え、
前記第1基板は前記第1基板の厚み方向に貫通する貫通孔と、前記貫通孔の内側に形成された貫通電極と、前記主面に形成された第1電極と、が設けられ、
前記第2基板は前記第2基板の前記主面に形成された第2電極と、前記第2電極上に配置され前記第2基板の前記主面から突出する突起電極と、が設けられ、
前記貫通電極は前記裏面側に凹部を有し、前記凹部の底部の位置は、前記第1基板の前記裏面よりも前記主面側に位置し、前記第1基板の前記裏面より前記主面に配置された前記第1電極に繋がり、
前記凹部に前記突起電極が入り込んで前記第1基板と前記第2基板とが積層されており、
前記凹部の開口幅aと、前記突起電極の先端幅bが、a>bの関係となっていることを特徴とする半導体装置。 - 前記第1基板の前記凹部の深さcと、前記第2基板の前記突起電極の高さdが、c<dの関係となっていることを特徴とする請求項1に記載の半導体装置。
- 前記第1基板の前記凹部の開口は前記底部から前記裏面に向かって広くなっていることを特徴とする請求項1または2に記載の半導体装置。
- 前記第1基板の前記貫通孔の内壁には絶縁膜が形成され、前記絶縁膜の内側に導電層を有した前記貫通電極があり、前記凹部は前記導電層中に配置し、
前記導電層は2種類以上の材料で構成され、前記凹部の前記裏面側の表面の材料が最も融点が低い材料から構成され、
前記融点が低い料材と前記第2基板に形成された前記突起電極が金属間接合していることを特徴とする請求項1ないし3のいずれか一項に記載の半導体装置。 - 前記融点が低い材料はろう材であることを特徴とする請求項4に記載の半導体装置。
- 前記第2基板の前記第2電極に形成された前記突起電極の先端幅bと、前記第2電極側の前記突起電極の幅eはb<eの関係となっていることを特徴とする請求項1ないし5のいずれか一項に記載の半導体装置。
- 請求項1ないし6のいずれか一項に記載の半導体装置が実装されてなるセンサー。
- 請求項1ないし6のいずれか一項に記載の半導体装置を有する電子デバイス。
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CN201210034217.5A CN102651357B (zh) | 2011-02-24 | 2012-02-15 | 半导体装置、传感器以及电子设备 |
US13/403,338 US9000575B2 (en) | 2011-02-24 | 2012-02-23 | Semiconductor device having stacked substrates with protruding and recessed electrode connection |
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