JP5866227B2 - 基板洗浄方法 - Google Patents

基板洗浄方法 Download PDF

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Publication number
JP5866227B2
JP5866227B2 JP2012037395A JP2012037395A JP5866227B2 JP 5866227 B2 JP5866227 B2 JP 5866227B2 JP 2012037395 A JP2012037395 A JP 2012037395A JP 2012037395 A JP2012037395 A JP 2012037395A JP 5866227 B2 JP5866227 B2 JP 5866227B2
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Japan
Prior art keywords
cleaning
substrate
substrate surface
roll
scrub
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Application number
JP2012037395A
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English (en)
Japanese (ja)
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JP2013175496A5 (enExample
JP2013175496A (ja
Inventor
知淳 石橋
知淳 石橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2012037395A priority Critical patent/JP5866227B2/ja
Priority to TW101134106A priority patent/TWI525686B/zh
Priority to KR1020120121073A priority patent/KR20130097053A/ko
Priority to US13/758,226 priority patent/US9142399B2/en
Publication of JP2013175496A publication Critical patent/JP2013175496A/ja
Publication of JP2013175496A5 publication Critical patent/JP2013175496A5/ja
Application granted granted Critical
Publication of JP5866227B2 publication Critical patent/JP5866227B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012037395A 2012-02-23 2012-02-23 基板洗浄方法 Active JP5866227B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012037395A JP5866227B2 (ja) 2012-02-23 2012-02-23 基板洗浄方法
TW101134106A TWI525686B (zh) 2012-02-23 2012-09-18 基板洗淨方法
KR1020120121073A KR20130097053A (ko) 2012-02-23 2012-10-30 기판 세정 방법
US13/758,226 US9142399B2 (en) 2012-02-23 2013-02-04 Substrate cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012037395A JP5866227B2 (ja) 2012-02-23 2012-02-23 基板洗浄方法

Publications (3)

Publication Number Publication Date
JP2013175496A JP2013175496A (ja) 2013-09-05
JP2013175496A5 JP2013175496A5 (enExample) 2015-10-15
JP5866227B2 true JP5866227B2 (ja) 2016-02-17

Family

ID=49001522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012037395A Active JP5866227B2 (ja) 2012-02-23 2012-02-23 基板洗浄方法

Country Status (4)

Country Link
US (1) US9142399B2 (enExample)
JP (1) JP5866227B2 (enExample)
KR (1) KR20130097053A (enExample)
TW (1) TWI525686B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220168166A (ko) 2021-06-15 2022-12-22 가부시키가이샤 에바라 세이사꾸쇼 기판 세정 장치, 기판 처리 장치, 브레이크 인 장치, 기판에 부착되는 미립자 수의 추정 방법, 기판 세정 부재의 오염 정도 판정 방법 및 브레이크 인 처리의 판정 방법
US12220732B2 (en) 2019-12-11 2025-02-11 Ebara Corporation Substrate cleaning system and substrate cleaning method

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014130881A (ja) * 2012-12-28 2014-07-10 Ebara Corp 研磨装置
KR102047704B1 (ko) 2013-08-16 2019-12-02 엘지전자 주식회사 이동 단말기 및 이의 제어 방법
JP6279276B2 (ja) 2013-10-03 2018-02-14 株式会社荏原製作所 基板洗浄装置及び基板処理装置
JP2015099852A (ja) * 2013-11-19 2015-05-28 株式会社荏原製作所 基板洗浄装置および基板処理装置
SG10201407598VA (en) 2013-11-19 2015-06-29 Ebara Corp Substrate cleaning apparatus and substrate processing apparatus
JP6321353B2 (ja) * 2013-11-19 2018-05-09 株式会社荏原製作所 基板洗浄装置および基板処理装置
JP6339351B2 (ja) * 2013-11-25 2018-06-06 株式会社荏原製作所 基板洗浄装置および基板処理装置
JP6389089B2 (ja) * 2014-09-18 2018-09-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2016082195A (ja) * 2014-10-22 2016-05-16 Ｔｏｗａ株式会社 切断装置及び切断方法
JP6313189B2 (ja) * 2014-11-04 2018-04-18 東芝メモリ株式会社 半導体装置の製造方法
JP6797526B2 (ja) * 2014-11-11 2020-12-09 株式会社荏原製作所 基板洗浄装置
JP6543534B2 (ja) * 2015-08-26 2019-07-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US10388537B2 (en) 2016-04-15 2019-08-20 Samsung Electronics Co., Ltd. Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same
JP6934918B2 (ja) * 2016-05-09 2021-09-15 株式会社荏原製作所 基板洗浄装置
KR102338647B1 (ko) * 2016-05-09 2021-12-13 가부시키가이샤 에바라 세이사꾸쇼 기판 세정 장치
KR20170128801A (ko) 2016-05-16 2017-11-24 삼성전자주식회사 기판 세정 방법 및 이를 수행하기 위한 장치
CN106513351B (zh) * 2016-11-26 2019-04-02 王辉 一种电动汽车充电桩专用清洗装置及其清洗方法
JP6758247B2 (ja) * 2017-05-10 2020-09-23 株式会社荏原製作所 洗浄装置および基板処理装置、洗浄装置のメンテナンス方法、並びにプログラム
JP6979935B2 (ja) * 2018-10-24 2021-12-15 三菱電機株式会社 半導体製造装置および半導体製造方法
US11791173B2 (en) 2019-03-21 2023-10-17 Samsung Electronics Co., Ltd. Substrate cleaning equipment, substrate treatment system including the same, and method of fabricating semiconductor device using the substrate cleaning equipment
JP2020184581A (ja) * 2019-05-08 2020-11-12 株式会社荏原製作所 基板処理装置および基板処理方法
JP7348623B2 (ja) * 2019-05-28 2023-09-21 アイオン株式会社 基板洗浄用ブラシ
JP2021048336A (ja) * 2019-09-20 2021-03-25 三菱電機株式会社 処理液生成方法、処理液生成機構、半導体製造装置及び半導体製造方法
TWI789842B (zh) * 2020-09-11 2023-01-11 日商芝浦機械電子裝置股份有限公司 基板處理裝置
KR102862397B1 (ko) 2020-09-18 2025-09-22 삼성전자주식회사 기판 세정 방법 및 그를 포함하는 기판 제조 방법
US11728185B2 (en) 2021-01-05 2023-08-15 Applied Materials, Inc. Steam-assisted single substrate cleaning process and apparatus
JP7720208B2 (ja) * 2021-09-22 2025-08-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US12285837B2 (en) 2021-11-18 2025-04-29 SanDisk Technologies, Inc. Wafer surface chemical distribution sensing system and methods for operating the same
US20250235900A1 (en) * 2024-01-23 2025-07-24 Applied Materials, Inc. Water-based, high-efficiency chemical reagent for substrate surface particle removal
CN119456556B (zh) * 2024-11-14 2025-11-04 中国航发西安动力控制科技有限公司 一种航空齿轮类零部件清洁度控制方法

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JP3003684B1 (ja) * 1998-09-07 2000-01-31 日本電気株式会社 基板洗浄方法および基板洗浄液
JP3875456B2 (ja) * 2000-06-29 2007-01-31 株式会社東芝 洗浄方法および洗浄装置
JP3667273B2 (ja) * 2001-11-02 2005-07-06 Ｎｅｃエレクトロニクス株式会社 洗浄方法および洗浄液
WO2006073140A1 (en) * 2005-01-06 2006-07-13 Ebara Corporation Substrate processing method and apparatus
EP1848028B1 (en) * 2005-02-07 2012-07-18 Ebara Corporation Substrate processing method and substrate processing apparatus
JP2008153322A (ja) * 2006-12-15 2008-07-03 Dainippon Screen Mfg Co Ltd 二流体ノズル、基板処理装置および基板処理方法
JP2009231628A (ja) 2008-03-24 2009-10-08 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2009238896A (ja) * 2008-03-26 2009-10-15 Renesas Technology Corp 半導体集積回路装置の製造方法
JP5744382B2 (ja) * 2008-07-24 2015-07-08 株式会社荏原製作所 基板処理装置および基板処理方法
JP5294944B2 (ja) * 2009-03-31 2013-09-18 株式会社荏原製作所 基板の洗浄方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12220732B2 (en) 2019-12-11 2025-02-11 Ebara Corporation Substrate cleaning system and substrate cleaning method
KR20220168166A (ko) 2021-06-15 2022-12-22 가부시키가이샤 에바라 세이사꾸쇼 기판 세정 장치, 기판 처리 장치, 브레이크 인 장치, 기판에 부착되는 미립자 수의 추정 방법, 기판 세정 부재의 오염 정도 판정 방법 및 브레이크 인 처리의 판정 방법
US12128449B2 (en) 2021-06-15 2024-10-29 Ebara Corporation Substrate cleaning device, substrate processing apparatus, break-in device, method for estimating number of fine particles adhering to substrate, method for determining degree of contamination of substrate cleaning member, and method for determining break-in processing

Also Published As

Publication number Publication date
US9142399B2 (en) 2015-09-22
TWI525686B (zh) 2016-03-11
US20130220368A1 (en) 2013-08-29
TW201335987A (zh) 2013-09-01
KR20130097053A (ko) 2013-09-02
JP2013175496A (ja) 2013-09-05

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