JP5801791B2 - バックエッチングを施したエミッタを有するシリコン太陽電池および類似の太陽電池を形成する方法 - Google Patents
バックエッチングを施したエミッタを有するシリコン太陽電池および類似の太陽電池を形成する方法 Download PDFInfo
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- JP5801791B2 JP5801791B2 JP2012283197A JP2012283197A JP5801791B2 JP 5801791 B2 JP5801791 B2 JP 5801791B2 JP 2012283197 A JP2012283197 A JP 2012283197A JP 2012283197 A JP2012283197 A JP 2012283197A JP 5801791 B2 JP5801791 B2 JP 5801791B2
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- 229910052710 silicon Inorganic materials 0.000 title claims description 23
- 239000010703 silicon Substances 0.000 title claims description 23
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- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 6
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
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- 238000001465 metallisation Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
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- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (10)
- 選択的エミッタを有するシリコン太陽電池(1)の形成方法であって、
太陽電池基板(13)のエミッタ面に対して2次元的に延在するエミッタ(5)を形成する工程と、
前記エミッタ面の第1部分領域(8)上にエッチング防壁(25)を処理する工程と、
前記エッチング防壁によって覆われない前記エミッタ面の第2部分領域(9)に多孔質シリコン層(27)を形成する工程と、
前記エッチング防壁(25)によって覆われない前記エミッタ面の前記第2部分領域(9)の前記エミッタ面をエッチングすることにより、前記エミッタ(5)の厚さが局所的に減少し、かつ前記エミッタ(5)のシート抵抗が局所的に高くなる工程と、
前記エッチング防壁(25)を除去する工程と、
前記第1部分領域(7)に対して金属接点(17)を形成する工程とを、この順序で含む、ことを特徴とする方法。 - 前記多孔質シリコン層(27)を酸化する工程を更に含む、ことを特徴とする請求項1に記載の方法。
- 前記多孔質シリコン層(27)をエッチングする工程を更に含む、ことを特徴とする請求項1または2に記載の方法。
- 前記酸化された多孔質シリコン層(27)のエッチング工程は、前記エッチング防壁(25)を除去する工程の後に実行される、ことを特徴とする請求項3に記載の方法。
- 形成された前記多孔質シリコン層(27)の厚さは、光学的に検出される、ことを特徴とする請求項1乃至4のいずれか1項に記載の方法。
- 前記エミッタ面をエッチングする工程、多孔質シリコン層(27)を形成する工程および多孔質シリコン層を酸化する工程の少なくともひとつは、溶液を用いて実行される、ことを特徴とする請求項1乃至5のいずれか1項に記載の方法。
- 前記2次元的に延在するエミッタを形成する工程は、POCl3気相拡散によって実行され、当該実行に起因して発生する燐ガラス(23)は、前記エッチング防壁を処理する工程の前に除去されない、ことを特徴とする請求項1乃至6のいずれか1項に記載の方法。
- 前記エッチング防壁は、プラスチックを含有するペーストを用いて処理される、ことを特徴とする請求項1乃至7のいずれか1項に記載の方法。
- 前記エッチング防壁は、スクリーン印刷によって処理される、ことを特徴とする請求項1乃至8のいずれか1項に記載の方法。
- 前記金属接点は、スクリーン印刷によって処理される、ことを特徴とする請求項1乃至9のいずれか1項に記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007035068.8 | 2007-07-26 | ||
DE102007035068A DE102007035068A1 (de) | 2007-07-26 | 2007-07-26 | Verfahren zum Fertigen einer Silizium-Solarzelle mit einem selektiven Emitter sowie entsprechende Solarzelle |
DE102007062750.7 | 2007-12-27 | ||
DE102007062750A DE102007062750A1 (de) | 2007-12-27 | 2007-12-27 | Verfahren zum Fertigen einer Silizium-Solarzelle mit einem rückgeätzten Emitter sowie entsprechende Solarzelle |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010517394A Division JP2010534927A (ja) | 2007-07-26 | 2008-07-23 | バックエッチングを施したエミッタを有するシリコン太陽電池および類似の太陽電池を形成する方法 |
Publications (2)
Publication Number | Publication Date |
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JP2013080954A JP2013080954A (ja) | 2013-05-02 |
JP5801791B2 true JP5801791B2 (ja) | 2015-10-28 |
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JP2010517394A Pending JP2010534927A (ja) | 2007-07-26 | 2008-07-23 | バックエッチングを施したエミッタを有するシリコン太陽電池および類似の太陽電池を形成する方法 |
JP2012283197A Expired - Fee Related JP5801791B2 (ja) | 2007-07-26 | 2012-12-26 | バックエッチングを施したエミッタを有するシリコン太陽電池および類似の太陽電池を形成する方法 |
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Application Number | Title | Priority Date | Filing Date |
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JP2010517394A Pending JP2010534927A (ja) | 2007-07-26 | 2008-07-23 | バックエッチングを施したエミッタを有するシリコン太陽電池および類似の太陽電池を形成する方法 |
Country Status (11)
Country | Link |
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US (1) | US8586396B2 (ja) |
EP (1) | EP2171762B1 (ja) |
JP (2) | JP2010534927A (ja) |
KR (1) | KR20100036344A (ja) |
CN (1) | CN101743640B (ja) |
DE (1) | DE202008017782U1 (ja) |
ES (1) | ES2505322T3 (ja) |
MY (1) | MY153500A (ja) |
RU (1) | RU2468475C2 (ja) |
TW (1) | TWI419349B (ja) |
WO (1) | WO2009013307A2 (ja) |
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US8586396B2 (en) | 2013-11-19 |
TWI419349B (zh) | 2013-12-11 |
MY153500A (en) | 2015-02-27 |
RU2010105924A (ru) | 2011-09-10 |
KR20100036344A (ko) | 2010-04-07 |
DE202008017782U1 (de) | 2010-06-10 |
EP2171762A2 (en) | 2010-04-07 |
RU2468475C2 (ru) | 2012-11-27 |
TW200926433A (en) | 2009-06-16 |
JP2010534927A (ja) | 2010-11-11 |
US20100218826A1 (en) | 2010-09-02 |
WO2009013307A3 (en) | 2009-10-22 |
WO2009013307A2 (en) | 2009-01-29 |
JP2013080954A (ja) | 2013-05-02 |
CN101743640B (zh) | 2012-12-19 |
EP2171762B1 (en) | 2014-06-25 |
CN101743640A (zh) | 2010-06-16 |
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